Process/Coating Engineer

JUNQI XIE

• **** S Dorsey Ln. Apt ***, Tempe, AZ 85281 • Phone: 480-***-**** • E-mail: *****.***@*******.***

OBJECTIVE

Obtain a full time Thin Film Process Engineer position

SUMMARY OF QUALIFICATIONS

 Solid background in semiconductor materials and chemistry

 4 years’ hands-on experience with thin film processes and materials characterization

 Extensive technical experience with equipment maintenance, troubleshooting and repair

 Detail and goal-oriented with proven ability to identify and solve problems

 Effective team player with strong planning, organizational and communication skills

RELEVANT SKILLS

Thin Film Process

 Experienced with building, modifying and maintaining thin film CVD and MBE deposition systems: high vacuum system, dry, turbomolecular and cryo- pumps, stainless steel and quartz chambers, multi-zone resistance heating furnace, Radio-frequency induction heating furnace and gas control system

 Proficient in device fabrication equipment and tools: Spinner, PlasmaQuest PECVD, EVG620 Mask Aligner, Wet Bench Station, Oxford PlasmaLab Reactive Ion Etcher (RIE), Torrvac E-Beam Evaporator, Tegal PlasmaLine Plasma Asher

Materials Characterization

Experienced with High-Resolution Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), High-Resolution X-Ray Diffractometer (HR-XRD), Rutherford Backscattering Spectroscopy (RBS), Atomic Force Microscopy (AFM), Hall measurements, Spectral Ellipsometry (SE) and Secondary Ion Mass Spectrometry (SIMS)

Software

Good at MS Office, JMP, Origin, Mathematica and ThermoCalc

EXPERIENCE

Research Assistant – Arizona State University, Tempe, AZ 08/2006 - Present

Develop new thin film deposition process; evaluate and improve fundamental properties of new materials; fabricate prototype devices; maintain CVD and MBE systems regularly; diagnose and fix technical problems; work in cooperation with group members and present results at weekly meetings

Growth of Novel GeSi-based Semiconductors for Photovoltaic Applications

Funded by US Department of Energy

 Established a unique CVD process suitable for direct industrial scale up and application

 Initiated, planned and executed a systematic set of experiments to optimize the CVD process

 Achieved high quality GeSiSn films directly on Si and Ge at a significantly enhanced growth rate

 Developed a series of RTA recipes to improve GeSiSn film structural, electrical and optical properties

Fabrication of Multi-Junction Solar Cell Architectures: InGaAs/GeSiSn/Ge/Si

 Developed a combined CVD-MBE process to achieve multi-junction solar cell architectures

 Demonstrated the application of GeSiSn materials in state-of-art III-V solar cells to improve efficiency and reduce cost

Doping of New Ge-Rich Materials for Optoelectronic Applications

Funded by Air Force Office for Scientific Research

 Assembled and upgraded a CVD system to achieve in-situ doping of GeSn films

 Fabricated the first generation GeSn PIN junctions on Si for extended performance photodetectors

Fabrication of GeSn/Si Wide Range IR Devices

 Fabricated prototype GeSn/Si photoconductor structures under CMOS compatible conditions

 Attained sharply defined sidewall profile at a high etching rate by improving RIE process

 Determined the best metal ohmic contact based on current-voltage (I-V) measurements

EDUCATION

Ph. D in Chemistry GPA: 3.9/4.0 08/2006 - 07/2010

Arizona State University, Tempe, AZ

B.S. in Materials Chemistry GPA: 3.3/4.0 08/2001 - 07/2005

Peking University, Beijing, China

SELECTED PUBLICATIONS

Junqi Xie, A.V.G. Chizmeshya, J. Tolle, V. R. D’Costa, J. Menéndez and J. Kouvetakis, “Synthesis, stability range and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si (100) and Ge (100) platforms”, Chemistry of Materials Submitted

Junqi Xie, J. Tolle, V. R. D’Costa, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, “Direct integration of active Ge1-x(Si4Sn)x semiconductors on Si(100)”, Applied Physics Letters 95, 181909 (2009)

Junqi Xie, J. Tolle, V. R. D’Costa, C. Weng, A.V.G. Chizmeshya, J. Menendez and J. Kouvetakis, “Molecular approaches to p- and n- nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties”, Solid State Electronics 53(8), 816-823 (2009)

Yan-Yan Fang, Junqi Xie, John Tolle, Radek Roucka, Vijay R. D’Costa, Andrew V. G. Chizmeshya, Jose Menendez, and John Kouvetakis, “Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics”, Journal of the American Chemical Society 130(47), 160**-***** (2008)

More work published on Journal of Vacuum Science and Technology, Physical Review B and Thin Solid Films.

AFFILIATION

 Institute of Electrical and Electronics Engineers (IEEE)

 American Chemistry Society (ACS)

REFERENCES

Available upon request

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