Engineer Engineering

EDUCATION

****-****, **.*.: School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China

****-****, *.*: Material Processing Engineering, Jilin University, Changchun, China

1996-2000, B.E.: Material Processing Engineering, Jilin University, Changchun, China

EXPERIENCE

Research Assistant Professor, Institute for Nanoscale Materials Science and Engineering, Univ of

Arkansas, Fayetteville, AR Aug.2009-Present

Responsibilities include research oriented towards MBE growth, optical, electrical, and structural characterization of Al (In) GaN materials for optoelectronic applications (UV avalanche photodetector and solar cell), polarization doping of (Al)GaN for device application. Also responsible for coordinating installation and characterization of Reactive Ion Etching (RIE) equipment, maintaining spectroscopy and UHV equipment, and training and assisting students in the use of lab equipment. Study and characterization of device scale ordering of nanocrystal quantum dots for solar cell application.

Postdoctoral Research Associate, Electrical and Computer Engineering Department, Univ of

Kentucky, Lexington, KY Sep.2008-Aug.2009

The research is focused on fabrication and test of MOS capacitors and properties of nanoscale dielectric films (HfO2, SiO2, SiOxNy ). Research includes: ALD growth of HfO2 and Al2O3, interface properties of HfO2/Si, Al2O3/Si, SiOxNy/Si system, leakage current and capacitance of ultrathin dielectric gate (sub 1 nm EOT) capacitor.

PhD Program in State Key Laboratory of Electronic Thin Films and Integrated Device, Univ Elect Sci & Technol China Sep.2004-Jul.2008

Responsibilities includes: investigate structure and properties of nanostructure inclusion silicon film prepared by PECVD, especially effect of structure variation on 1/f noise and thermal conductivity of silicon films, design and fabricate a microelectronic device by 3D-IC technique, improve the performance of the microelectronic device by optimizing structure and properties of sensitive silicon layer.

Master Program in Key Laboratory of Automobile Materials, Ministry of Education, Jilin Univ

Sep.2001-Jul.2004

Investigated mechanism of metal processing, participated in studying and designing an automatic manipulator to enhance the efficiency of metal processing.

Key Laboratory of Automobile Materials, Ministry of Education, Jilin Univ Sep.1999-Jul.2000

Participated in the research of metal material microstructure and processing

FAW Wuxi Diesel Engine Works Sep.2000-Jul.2001

As an Engineer took charge of designing and processing metal parts in automobile engine

EXPERTISE

Growth, characterization and fabrication of semiconductor for device applications including, capacitor, transistor, photodetectors, LED and solar cell.

SKILLS

Thin Film Growth: Three years hands-on experience in using and maintaining PECVD system, using atomic layer deposition (ALD), molecular beam epitaxy (MBE), magnetron sputtering system, Ebeam and thermal evaporation

Device Fabrication and Test: Cleaning room experience including fabrication and processing experience, photolithograph, wet and RIE etching, use of various metrology tools such as Perkin Elmer Spectrum GX FTIR, Bruker IFS 125HR FTIR, Electrochemical Capacitance Voltage (ECV), X-ray Diffraction (XRD), and Atomic Force Microscope (AFM), Dektak profilometer, Angilent and Keithley semiconductor characterization system, Spectroscopic ellipsometer, SEM, UV spectrophotometer.

Knowledge Background: Physics of semiconductor devices, thin film for device structure, MOS stacks, thin film transistor, heterostructure thin film, high dielectric film, III-V semiconductor, optical sensors array, solar cell, nanocrystal quantum dots, Micro-Electro-Mechanical Systems, metal material and process

PUBLICATIONS

Published more than 35 papers (17 first-authored papers), 24 papers have been included by SCI, 5 papers have been included by EI, and one is under review by a SCI journal.

1. S. Li, M. Ware, X. Yan, V. P. Kunets, P. Minor, J. Wu, and G. J. Salamo, “ Polarization induced doping in graded AlGaN films”, Phyisca status solidi (c) accepted (2010)

2. S. Li and Z. Chen, “Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO2 on silicon”, Electrochemical Society Transactions 28 (2010) 89

3. J. Wu, D. Shao, V. G. Dorogan, A. Z. Li, S. Li, E. A. DeCuir, Jr., M. O. Manasreh, Z. M. Wang, Y. I. Mazur, G. J. Salamo, “Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy ”, Nano Letters 10 (2010) 1512.

4. S. Li, L. Han and Z. Chen, “The interfacial quality of HfO2 on silicon with different thickness of the chemical oxide interfacial layer”, Journal of Electrochemical Society, 157 (2010) 221.

5. Z. Li, J. Wu, Z. Wang, D. Fan, A. Guo, S. Li, S. Yu, M. O. Manasreh, and G. J. Salamo, “InGaAs quantum well grown on high index surfaces for superluminescent diode applications”, Nanoscale Research Letters 5 (2010) 1079.

6. K. Y.Narsingi, S. Li, M. O. Manasreh and B. D. Weaver, “Optical Absorption of Proton Irradiated Colloidal CdSe/ZnS Core/Shell Nanocrystals”, IEEE Transaction on nuclear science, 57 (2010) 2929.

7. J. Wu, Z. Wang, A. Z. Li, S. Li and G. J. Salamo, “Surface mediated control of droplet density and morphology on GaAs”, Phyisca status solidi (RLL)-Rapid Research Letters, 4 (2010) 371.

8. S. Li, Y. Jiang, Z. Wu, J. Wu, W. Li, Z. Wang, G. J. Salamo, “Origins of 1/f noise in nanostructure inclusion polymorphous silicon films”, Nanoscale Research Letters, Accepted (2010).

9. J. Wu, Z. Wang, A. Z. Li, Z. Zeng, S. Li, G. Chen, G. J. Salamo, “Formation of GaAs Double Rings through Gallium Migration and Nanodrilling”, Journal of Nanoelectronics and Optoelectronics, Accepted (2010)

10. S. Li, Y. Jiang, Z. Wu, J. Wu, Z. Wang,W. Li, and J. Yu and G. J. Salamo, “Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure”, Thin Solid Films, under review (2010)

11. S. Li, Z. Wu, Y. Jiang, W. Li, N. Liao and J. Yu, “Structure and 1/f noise of boron doped polymorphous silicon films”, Nanotechnology 19 (2008) 085706

12. S. Li, Z. Wu, W. Li, N. Liao, J. Yu and Y. Jiang, “Influence of microcrystallization on noise in boron-doped silicon film”, Physica Status Solidi (a) 204 (2007) 4292

13. S. Li, Z. Wu, Y. Jiang, J. Yu, W. Li and N. Liao, “Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas”, Journal of Physics D: Applied Physics 41 (2008) 105207

14. S. Li, Z. Wu, Y. Jiang, W. Li, N. Liao and J. Yu, “Noise in boron doped amorphous/microcrystallization silicon films”, Applied Surface Science 254 (2008) 3274

15. S. Li, Z. Wu, W. Li, Y. Jiang and N. Liao, “Influence of substrate temperature on the microstructure and optical properties of hydrogenated silicon film prepared with pure silane”, Physica B –Condensed matter 403 (2008) 2282

16. S. Li, Z. Wu, W. Li, N. Liao and Y. Jiang, “Investigation on microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane”, Philosophical Magazine 87 (2007) 5539

17. S. Li, Z. Wu, K. Yuan, N. Liao, W. Li and Y. Jiang, “Study on thermal conductivity of hydrogenated amorphous silicon films” Acta Physica Sinica 57 (2008) 500 (In Chinese)

18. S. Li, Z. Wu, W. Li, Y. J. Yu, Jiang and N. Liao, “Study on crystalline mechanism of hydrogenated silicon film” Acta Physica Sinica 57 (2008) 7114 (In Chinese)

19. S. Li, Z. Wu, K. Zhu, Y. Jiang, W. Li and N. Liao, “Effect of substrate temperature on the optical properties of RF-PECVD a-Si:H Films”, Acta Physico-Chimica Sinica 23 (2007) 1252 (In Chinese)

20. N. Liao, W. Li, Y. Jiang, Z. Liu, K. Qi, Z. Wu and S. Li, “Depth profile study on Raman spectra of highenergy-electron-irradiated hydrogenated amorphous silicon films”, Science in China Series E: Technological Sciences 52 (2009) 2406

21. N. Liao, W. Li, Y. Kuang, Y. Jiang, S. Li and Z. Wu, “Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films”, Science in China Series E: Technological Sciences 52 (2009) 339

22. N. Liao, W. Li, Z. Liu, Y. Jiang, Z. Wu, K. Qi and S. Li, “Effects of irradiation with electrons of different energies on the dark conductivity and the network of hydrogenated amorphous silicon films”, Philosophical Magazine Letters, 88 (2008) 871

23. N. Liao, W. Li, Y. Jiang, Z. Wu, K. Qi and S. Li, “Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD” , Philosophical Magazine 88 (2008) 3051

24. N.Liao, W. Li, Y. Jiang, Z.Wu, S. Li, Z. Liu, Z. Li, X. Jin and Y. Chen, “Electron irradiation effects on the

properties of heavily phosphorus-doped a-Si :H films prepared from undiluted silane”, Journal of Physics D: Applied Physics 41 (2008) 205412

25. N. Liao, W. Li, Y. Jiang, Y. Kuang, K. Qi, S. Li and Z. Wu, “Thickness and optical constant determination of hydrogenated amorphous silicon thin film from transmittance spectra of ellipsometer”, Acta Physica Sinica 57 (2008) 1542 (In Chinese)

26. N. Liao, W. Li, Y. Jiang, Y. Kuang, K. Qi, Z. Wu and S. Li, “Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge”, Applied. Physics A: material science & processing 91 (2008) 349

27. S. Li, Z. Wu, N. Liao, Y. Jiang W. Li and J. Yu, “Optical Property Analysis of Micro-bolometer Based on MEMS”, International Conference and Exhibition on Integration and Commercialization of Micro and Nanosystems, Sanya, China, Jan. 2007, Sponsored by ASME and CMES

28. S. Li, Z. Wu, K. Zhu, Y. Jiang, W. Li and N. Liao, “Effect of Technical Parameter on Optical Constants of amorphous Silicon Thin Film”, Proc. SPIE 6722 (2007) 67221U

29. Z. Wu, S. Li, W. Li, Y. Jiang, N. Liao and K. Zhu, “Characterization of hydrogenated amorphous silicon thin films prepared by PECVD”, Proc. SPIE 6722 (2007) 67222X.

30. X. Wei, Z. Wu, T. Wang, S. Li, J. Tang, and Y. Jiang, “Photovoltaic effect of different thickness vanadium

oxide thin film”, Proc. SPIE 6723 (2007) 672342

31. N. Liao, W. Li, Y. Jiang, Y. Kuang, K. Qi, Z. Wu, and S. Li, “Manufacturing and photoelectrical properties

of P-doped a-Si:H thin films deposited by PECVD”, Proc. SPIE 6722 (2007) 672219

32. S. Li, Z. Wu, K. Zhu, Y. Jiang, W. Li, and N. Liao, “Effect of working gas pressure on the optical properties of RF-PECVD a-Si:H films”, Journal of Optoelectronics Laser, 19 (2008) 352. (In Chinese)

33. S. Li, Z. Wu, Y. Jiang, W. Li, and N. Liao, “Thermal and optical analysis of amorphous silicon micro-bolometer”, Chinese Journal of Sensor and Actuators, 19 (2006) 1721. (In Chinese)

34. L. Yang, Z. Wu, S. Li, Y. Jiang, K. Zhu, W. Li, and N. Liao, “ Investigation on resistance instability of boron doped amorphous silicon films”, Semiconductor Optoelectroincs, 29 (2008) 705. (In Chinese)

35. S. Li, Z. Wu, Y. Jiang, X. Yang, and S. Li, “Performance analysis of microbolometer microbrige structure”, Chinese Journal of Sensor and Actuators, 19 (2006) 1728. (In Chinese)

36. N. Liao, W. Li, Y. Jiang, Y. Kuang, S. Li, and Z. Wu, “Recent progress on the stability of hydrogenated amorphous silicon thin films”, Materials review, 21 (2007) 21. (In Chinese)

As a Reviewer for Following Journals

IEEE Electron Device Letters

Nanotechnology

Journal of Physics D: Applied Physics

Journal of the Electrochemical Society

Nanoscale Research Letters

Philosophical Magazine

Measurement Science and Technology

Semicondutor Science and technology

LANGUAGE

Good communication and writing skills in English, School level Germany (Level 4/6 in China).

AWARDS

2006-2007 First-class scholarship UESTC

2006-2007 Zhengyang special scholarship UESTC

2005-2006 Third-class scholarship UESTC

1999-2000 Excellent student leader JiLin University

1998-1999 Excellent league member JiLin University

1998-1999 Excellent Student JiLin University

1997-1998 Excellent student leader JiLin University

1997-1998 Excellent Student JiLin University

1996-1997 Excellent Student JiLin University

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