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Douglas, MA ***** . 508-***-**** sqzuqs@r.postjobfree.com

Alfred Genis

Professional Summary Three patents issued with additional pending, Advanced Semiconductor materials development, characterization, process development, application engineering and manufacturing control, new product introduction and standardization, thin film and trace elemental analysis lab management, yield enhancement and SEMI-Standard product definition.

Experience 2001–Present Apollo Diamond Framingham, MA

Pioneer and world leader in the growth and fabrication of single crystal diamond. The company focuses on two distinct markets: optoelectronics/semiconductor and gemstones.

Director Advanced Development - member of the original core start up team

• Hired by the Founder and Chairman to establish fabrication methods never accomplished before on diamond in order to make single crystal diamond a viable material for technology applications. In addition, was hired to be a key contributor to developing the company’s diamond growth process.

• Established enhanced diamond polishing methodology that achieved semiconductor surface specifications. Achieved consistently parallel surfaces of 0.01degree accuracy using laser reflection technology, nanometer RA, 1/50th lambda wave flatness. As a result of this work, was awarded a patent.

• Developed an atomic level separation technology which allowed the company to reclaim diamond seeds and replicate material more efficiently. This effort included pre-growth material preparation, growth conditions and post growth processing. Without this technology, the company would not be able to scale wafer sizes. As a result of this successful development, the company was able to achieve replicating, for the first time in history, 1” single crystal diamond wafers.

• Established tiling methodology that is the cornerstone method for the company achieving larger wafer sizes. Established and utilized highly precise methodologies including x-ray topography to measure quality.

• Co-designed, managed and operated one the most advanced diamond laser cutters in the world; a 5 axis laser cutting and shaping system

• Purchased, maintained and set-up gem laser systems, polishers, etchers and diamond material characterization lab.

• Established statistical process control system for the company.

• Teamed with VP Business Development to establish technology applications business. Interfaced with a variety of Government, Educational and commercial entities including the DOE labs, Raytheon, Northrop Grumman, Harvard University and others.

1999–2001 SOITECH Peabody, MA

Senior Support Engineer

Chaired Technical interface meetings with France research and production teams concerning all US customer problems and development issues.

IBM, Intel, Motorola, AMD, HP and others

SEMI Standard representative for SOI

Supported ISO9000 system- France

SEMATECH ITRS representative for SOI concerning Defect yield and physical properties for MPU production.

1997–1999 Slumberger ATE/ IVS Concord, MA

Applications Engineering and Technical Service Manager

Provided IVS 130/135 Optical Metrology Tool Introduction

Established IVS 230 CD- SEM Customer Support Plan and Introduction

Created tool matching and calibration methodologies

Reduced Tool Induced Shift- TIS reduction process

Technical advances provided a 10% market share increase

Managed in house and customer acceptance for optical and CD- SEM’s

1995–1997 Micrcore Photonic Communications Systems Acton, MA

Quality and Manufacturing Manager

Prototype to full production including documentation and procedures for microchip laser production.

Device and material characterization – modal spacing, frequency, and network analysis 0-10GHz@-120db.

Instituted Clean room design and ESD training.

Established Product Improvement Committee- change orders, design review, product failure mode and effect analysis and document control

Created Final test and burn in reliability procedures

1990-1995 Ibis Technology Danvers, MA

Quality Control Manager

Established and Managed Thin Film Characterization laboratory

AFM, TXRF, ICPMS, GDMS, SE. and SPV

Created Quality Plan for ISO company compliance

Provided Material Standards to SEMI for SOI

Implemented production statistical process control (SPC)

Designed in-house UHP-DI water system

1985-1990 Spectrum Technologies Holliston, MA

Product Quality Specialist

Interacted with customer base on material characterization and quality issues

Implemented instrument calibration, control inspection systems

Implemented production statistical process control (SPC)

Managed Materials Analysis laboratory, Hall, sheet resistance, EL2, TSC, FTIR, dislocation analysis

Education 1981–1986 Central New England College Worcester, MA

B.S., Computer Science.

1987-1989 Northeastern University Boston, MA

Microelectronics Center for Continuing Education certificate

1972-1974 Wentworth Institute Boston, MA

Electronic Engineering

Special Courses Material Research Society- Ion implantation, molecular beam epitaxy, defects, diffusion and rapid thermal annealing.

Massachusetts Institute of Technology , Semiconductor Materials GaAs and Si 1988 summer program

Arizona State University –Semiconductor Materials and Device Characterization 1988

Charles Evans and Associates , Trace Elemental Analysis 1987

Publications Shock Response of Single Crystal Diamond in Two Orientations July 17-22, Los Alamos National Laboratory 2006 - David L. Robbins, Steven A. Sheffield, David B. Stahl and David E. Hooks, C. McEwen , R.C Linares , Patric Doering , and A.Genis International Symposium on Plasticity 2006, Nova Scotia, Canada

Index of Refraction Changes of Single Crystal Diamond in a Shock Environment July 17-22, Los Alamos National Laboratory 2006 - David L. Robbins, Steven A. Sheffield, David B. Stahl and David E. Hooks, C. McEwen , R.C Linares , Patric Doering , and A.Genis International Symposium on Plasticity 2006, Nova Scotia, Canada

Automatic Statistical Determination of Dislocation Density in Production SOI substrates Ibis Technology L.P.Allen, A.Genis, C.Jacobs, S.M.Allen, M.Sorrason and O.Zacharias - Oct 3-6 1995 IEEE International SOI Technology Conference

Effect of Anneal Temperature on Si/Burried Oxide Interface Roughness of SIMOX Ibis Technology P.Karn, A.Genis, L.P.Anon and P.Roitman Oct 4-6 1994 - IEEE International SOI Technology Conference

Characterization of Thin (100nm) SIMOX SOI Ibis Technology L.P.Allen, A.Genis, B.Dolan and Wade Krull, June 23-26 1993 -35th Electronic Materials Conference

Structural and Electrical Analysis of SIMOX Burried Oxide Ibis Technology L.P.Allen, M.Anc, A.Genis, W.A. Krull, Japand J.E. Chung 1992 Materail Research Society Fall Conference, Boston Ma.

Statistical Analysis of Silicon Defect Densities in SIMOX Ibis Technology L.P.Allen, A.Genis, W.A. Krull - IEEE SOI Conference Point Verde FL Oct 3-5 1992

Electrolytic Analysis of Oxide Leakage in SIMOX material SIMOX Ibis Technology L.P.Allen, A.Genis, B.Dolan, W.A. Krull - IEEE SOI Conference Point Verde FL Oct 3-5 1992

Detection of 0.3um particles on fully processed SIMOX wafers -Ibis Technology, A.Genis, W.A. Krull, R. Lalazari and J. Tuner - IEEE SOI Conference Point Verde FL Oct 3-5 1992

Patents Issued U.S. Patent No. 7,122, 837 Structures Formed in Diamond July 1,2005

U.S. Patent No. 7,238,088 Enhanced Diamond Polishing July 3, 2007

U.S. Patent No. 11,786,622 Carbon Grit July 11, 2007.

Patents Pending U.S. Patent Application: Diamond Structure Separation filed 2/11/2005 PCT/US2005/004299

U.S. Patent Application: Grown Diamond Mosaic Separation filed 7/21/2005 No.11/186,421

U.S. Patent Application: Seperation of Grown Diamond from Diamond Seeds Mosaic filed 7/21/2006 PCT/US2006/028361

U.S. Patent Application: Diamond Medical Devices filed 1/11/2006 PCT/US2006/000808.

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