Mohamed A. Hafez

EDUCATION:

Doctorate in Electrical Engineering,

August2008

“Reflection high-energy electron diffraction studies of indium

phosphide (100) and growth of indium and indium nitride on

silicon (100)”,

Electrical and Computer Engineering Department,

Old Dominion University,

Norfolk, VA, USA.

Master of Science in Experimental Physics, July 1998

“Investigation of characteristics of copper plasma induced by laser radiation”,

Physics Department,

Cairo University, Egypt.

Bachelor of Science in Physics, May 1991

Physics Department, College of Science

Cairo University, Egypt.

________________________________

WORK EXPERIENCE:

Post Doctoral Research Associate (2009-present), Old Dominion University Research Foundation, Applied Research Center, Jefferson Laboratory, Newport News, VA, USA.

Research Assistant (2007-2009), Old Dominion University, Applied Research Center, Jefferson Laboratory, Newport News, VA, USA.

Engineer Intern (2006-2007), Siemens VDO Automotive Corporation, Newport News, VA, USA.

Research Assistant (1998-2006), Old Dominion University, Applied Research Center, Jefferson Laboratory, Newport News, VA, USA.

Research Assistant (1994-1997), National Institute of Laser Enhanced Sciences,

Cairo University, Egypt.

RESEARCH EXPERIENCE:

- Electron yield and surface study of negative electron affinity activated of GaAs and InP photocathodes.

- Preparation of clean reconstructed surfaces of Si(100), InP(100), and GaAs(100) using chemical etching and atomic hydrogen source for studying growth and nucleation of thin films and for quantum efficiency measurements.

- Pulsed laser deposition (PLD) of heteroepitaxial and homoepitaxial growth of semiconductors and metals [InP on GaAs(100), Si on Si(100), Indium on Si(100) & Indium Nitride (InN) on Si(100)].

- Study of thin film growth dynamics and surface morphology of Indium on Si(100) surfaces by femtosecond PLD.

- Fabricate and study of nanostructures of Indium and InN on Si(100) substrates by femtosecond PLD using in situ reflection high-energy electron diffraction (RHEED).

- Development of laser optical cavity for Compton polarimeter.

- Surfaces and thin films characterization by ex situ Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and Energy Dispersive x-ray Spectra (EDS).

- Characterization and emission spectroscopy of laser induced copper plasma in vacuum and in a background gas.

TECHNICAL EXPERIENCE:

- Thin films deposition, using PLD and thermal evaporation techniques.

- Work on ultrahigh vacuum (UHV) systems, designing and building PLD system, operation and maintaining equipments.

- Surfaces and thin films characterization using in situ and ex situ techniques by electron diffraction [RHEED] and scanning probe microscopy (AFM, SEM), surface profilometer, optical microscope, and EDS].

- Chemical etching and surface cleaning of Si, GaAs, and InP semiconductor surfaces.

- Operating and maintaining laser systems, such as Nd:YAG, Excimer (XeCl), and femtosecond (Ti:Sapphire) amplified laser.

- Working on optical devices, imaging systems, electron beam diffraction technique, and instrumentations.

- Hands-on skills and lab experience and general computer skills.

INDUSTRIAL EXPERIENCE:

- Laser welding profiles and metallurgical analysis of fuel injectors.

- Depth profile and diffusion width measurements of welding penetration using optical microscopic technique.

- Cross-sectioning of welded samples [cutting, mounting, grinding, polishing, and chemical etching].

- Work on design of experiments (DOE’s) and performing materials testing in clean rooms.

GRADUATE COURSES:

- Optical information processing, complex variables, partial differential equations, semiconductor characterization, advanced gaseous electronics, semiconductor processing techniques, principles and application of laser engineering, and topics in electrical engineering: strain relaxation in heteroepitaxy and surface characterization by electron diffraction.

PUBLICATIONS:

REFEREED JOURNALS:

1- M. A. Hafez and H. E. Elsayed-Ali, “Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition” J. Vac. Sci. Technol. A 27, 696-699 (2009). [Selected to appear on the Virtual Journal of Ultrafast Science, Vol. 8, issue 7, July 2009].

2- M. A. Hafez and H. E. Elsayed-Ali, “Activation energy of surface diffusion and terrace width dynamics during the growth of In(4 3) on Si(100)-(2 1) by femtosecond pulsed laser deposition,” J. Appl. Phys. 103, 093510 (2008). [Selected to appear on the Virtual Journal of Ultrafast Science, Vol. 7, issue 6, June 2008].

3- M. A. Hafez and H. E. Elsayed-Ali, “Formation of In-(2 1) and In islands on Si(100)-(2 1) by femtosecond pulsed laser deposition,” J. Appl. Phys. 101, 113515 (2007). [Selected to appear on the Virtual Journal of Ultrafast Science, Vol. 6, issue 7, July 2007].

4- M. A. Hafez and H. E. Elsayed-Ali, “Femtosecond pulsed laser deposition of indium on Si(100),” J. Laser Micro/Nanoengineering 1, 44-47 (2006).

5- M. A. Hafez, M. S. Hegazy, and H. E. Elsayed-Ali, “Indium growth on Si(100)-2 1 by femtosecond pulsed laser deposition,” J. Vac. Sci. Tech. A 23, 1681-1686 (2005). [Selected to appear on the Virtual Journal of Ultrafast Science, Vol. 4, issue 11, November 2005].

6- M. A. Hafez, K. A. Elamrawi, and H. E. Elsayed-Ali, “Pulsed laser deposition of InP thin films on Sapphire(1000) and GaAs(100),” Appl. Surf. Sci. 233, 42-50 (2004).

7- M. A. Hafez, M. A. Khedr, F. F. Elaksher, and Y.E. Gamal, “Characteristics of Cu plasma produced by a laser interaction with a solid target,” Plasma sources Sci. Technol. 12, 185-198 (2003).

8- M. A. Hafez and H. E. Elsayed-Ali, “Atomic hydrogen cleaning of InP(100): electron yield and surface morphology of negative electron affinity activated surfaces,” J. Appl. Phys. 91, 1256-1264 (2002).

9- K. A. Elamrawi, M. A. Hafez, and H. E. Elsayed-Ali, “Atomic hydrogen cleaned GaAs(100) negative electron affinity photocathode: surface studies with reflection high-energy electron diffraction and quantum efficiency,” J. Vac. Sci & Technol. A 18, 951-955 (2000).

10- K. A. Elamrawi, M. A. Hafez, and H. E. Elsayed-Ali, “Atomic hydrogen cleaning of InP(100) for preparation of a negative electron affinity photocathode,” J. Appl. Phys. 84, 4568-4572 (1998).

CONFERENCES:

1- M. A. Hafez and H. E. Elsayed-Ali, “Low temperature growth of high-quality indium nitride on Si(100) by femtosecond pulsed laser deposition,” The American Vacuum Society 55th International symposium, Boston, MA, October 19-24 (2008).

2- M. A. Hafez and H. E. Elsayed-Ali, “Morphology of Indium Nanoparticles on Si grown by Femtosecond Pulsed Laser Deposition,” Virginia Nanotech 2006, Newport News, VA, June 11-13 (2006).

3- M. A. Hafez and H. E. Elsayed-Ali, “Indium nitride growth on Si(100) by femtosecond pulsed laser deposition,” American Physical Society (APS) meeting, Baltimore, MD, March 13-17 (2006).

4- M. A. Hafez and H. E. Elsayed-Ali, “Femtosecond pulsed laser deposition of indium on Si(100),” The 6TH International Symposium on Laser Precision Microfabrication, Williamsburg, VA, April 4-8 (2005).

5- M. A. Hafez, M. S. Hegazy, and H. E. Elsayed-Ali, “Indium growth on Si(100) by femtosecond pulsed laser deposition,” American Physical Society (APS) meeting, Palais des Congres de Montreal, Montreal, Quebec, Canada, March (2004).

6- M. A. Hafez, M. S. Hegazy, and H. E. Elsayed-Ali, “Growth of epitaxial two-dimensional layers of indium on Si(100) by femtosecond pulsed laser deposition,” The American Vacuum Society 50th International symposium, Baltimore, MD, November 2-7 (2003).

7- M. A. Hafez, K. A. Elamrawi, H. E. Elsayed-Ali, “Preparation of InP(100) surface for negative electron affinity photocathode”, [Conference Paper] Conference Proceedings, The 12th International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107). IEEE, pp.197-200. Piscataway, NJ, USA (2000).

8- K. A. Elamrawi, M. A. Hafez, and H. E. Elsayed-Ali, “Pulsed laser deposition of thin film InP over GaAs(100),” Bull. Amer. Phys. Soc., Vol. 44, No. 1, Centennial Meeting, p. 1460 (1999).

9- M. A. Hafez, M. Atta, F. Elaksher, and Yosr E. E-D Gamal, “Investigation of the characteristics of laser produced copper plasma,” The 25th Anniversary IEEE, International Conference on Plasma Science, Raleigh, NC, US, June 1-4 (1998).

10- K. A. Elamrawi, M. A. Hafez, and H. E. Elsayed-Ali, “Atomic Hydrogen Cleaning for InP Photocathode Surface Preparation,” The American Vacuum Society 45th International symposium, Baltimore, MD, November 2-6 (1998).

____________________________

PROFESSIONAL MEMBERSHIP:

- American Physical Society (APS), member, since January 2004.

- American Vacuum Society (AVS), member, since October 2003.

- Institute of Electrical and Electronics Engineers, IEEE/LEOS, member, since 2002.

HONARS AND AWARDS:

1- Graduate Student Travel Grant Award, for American Vacuum Society Conference, Old Dominion University (2003).

2- Supplemental Dissertation Stipend Award, Old Dominion University (2005).

3- Internship at Siemens VDO Automotive Corporation (2006-2007).

4- American Vacuum Society Dorothy M. and Earl S. Hoffman Travel Grant (2008).

5- Four articles selected to appear on American Physical Society’s Virtual Journal of Ultrafast Science.

REFERENCES:

1- Dr. Hani E. Elsayed-Ali

Professor and Eminent Scholar

Department of Electrical and Computer Engineering

Director

ODU-Applied Research Center (ARC)

12050 Jefferson Avenue

Old Dominion University

231 Kaufman Hall

Norfolk, VA 23529

Phone: 757-***-**** & 757-***-****

Fax : 757-***-**** & 757-***-****

E-mail: smouuf@r.postjobfree.com

2- Dr. Anne Reilly

Professor of Physics

(Previously at College of William and Mary)

P.O. Box 58714

Webster, TX 77598

Phone: 832-***-****

E-mail: smouuf@r.postjobfree.com

3- Dr. Julie Zhili Hao

Assistant Professor

Department of Mechanical Engineering

Old Dominion University

231 Kaufman Hall

Norfolk, VA 23529

Phone:757-***-****

E-mail: smouuf@r.postjobfree.com

Contact this candidate