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Tempe, Arizona, United States
March 23, 2011

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Subhasish Bandyopadhyay

Materials Science and Engineering

Arizona State University

Address: **** *** ***** *** *****, Apt #D204, Scottsdale, AZ-85258

Phone 480 *** ****, 480 *** ****



Semiconductor device characterization, thin film technology, semiconductor processing, high k dielectric, device breakdown analysis and design of experiments


PhD. in Materials Science and Engineering, Arizona State University, (Completed on: 10/31/2009)

Dissertation Title: “Characterization of Electronic Transport in Barium Strontium Titanate Based Ferroelectric and in Amorphous Selenium and Ionic Transport in Polyester Polyol Based Polyurethane”

M.S. in Materials and Metallurgical Engineering, Indian Institute of Technology, Kanpur, India, 2002

Thesis Title: “Study of Fracture and Cavitations Behavior of Superplastic Materials: Cu-Zn-Al and Al-Mg Alloys”

B.S. in Metallurgical Engineering, Jadavpur University, 2000,

Thesis Title: “A Study on Heat Treatment of Constructional Steels for Rotary Shaft in Relation to Fatigue Behavior”


• Solid background of material science, semiconductor materials, solid state device physics and design of experiments (DOE)

• Extensive research experience in characterizing the electrical properties of high k dielectrics, amorphous semiconductors and metal/insulator/metal junctions.

• Strong background in electrical testing (I-V and C-V), hall measurement, impedance spectroscopy, UV-VIS optical reflection/transmission, FTIR and minority carrier lifetime measurement.

• Research experience in thin film growth and processing (thermal evaporation, laser ablation, annealing);

• Extensive experience with electrical test apparatus calibration and maintenance ( I-V meter, C-V meter, Magnetometer, probe station and cables etc)

• Extensive experience with high vacuum equipment assembly and maintenance (vacuum chambers, power sources, pumps, valves, thermocouple, gauges and RGA etc);

• Comprehensive knowledge in materials characterization technique (DSC, TGA, SEM, RBS, SIMS, XPS, AES)

• In-depth knowledge of semiconductor processing technology (Diffusion, Ion Implantation, Etching, Photolithography)


Growth and characterization of FeS2 thin film and bulk materials (2009 to present)

• Developed a process to grow FeS2 thin film by Pulsed Laser Deposition technique for photovoltaic applications. Characterized the semiconductor thin film’s composition (PIXE and SIMS), structure (XRD), optical (FTIR) and electrical properties (Hall, I-V and C-V).

Subhasish Bandyopadhyay


Electrical characterization of amorphous solids, dielectric and ferroelectric thin films and bulk ceramics (2003-2009)

• Conducted electrical characterization experiments on undoped and As-doped amorphous Selenium, BaTiO3, SrTiO3, Ba(SrxTi1-x)O3 thin films and bulk ceramics as a function of temperature to model the electronic transport mechanism, analyzed and interpreted the data to extract device parameters and correlated the data to the process variables.

Impedance Spectroscopy and NMR diffusivity measurements of polymer materials (2004-2007)

• Conducted impedance spectroscopy for series of Li doped polyurethane samples to study the dielectric relaxation and to determine the resistivity as a function of temperature. Nuclear magnetic resonance had been done to obtain ionic diffusivity. The data from NMR and impedance spectroscopy were correlated to model the ionic conduction mechanism. Performed differential scanning calorimetry to measure the glass transition temperature.

Experience in Industrial Research

• 2 years experience in collaborative research work with Intermolecular Inc. San Jose CA.( 2007-2009)

o Performed electrical testing for non volatile memory devices. Compared the data for different materials system to provide the feedback for materials development.

• 3 years experience in collaborative research work with Hewlett-Packard, San Diego. (2004-2007)


• S. Bandyopadhyay , S.J. Liu, Z.Z. Tang, R. K. Singh and N. Newman – “Leakage Current Characteristics of Vanadium- and Scandium-doped Barium Strontium Titanate Ceramics over a wide range of D.C. Electric Fields”, Acta Materialia, 57, 4935, (2009)

• S. Bandyopadhyay, R.F. Marzke, R.K. Singh, N. Newman-“ Ionic Conduction in Lithium Per chlorate (LiClO4) and Lithium Tri Flouro Sulphonate (LiTFSl) Doped Polyurethane”, Accepted in Solid State Ionics

• Z.Z. Tang, S.J. Liu, R.K. Singh, S. Bandyopadhyay, I. Sus, T. Kotani, M van Schilfgaarde, N. Newman,- “Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (100) thin films”, Acta Materialia, Volume 57 (2009), page 432-440.

• P. Bharathan, S. Bandyopadhyay, M. Espinasse, R.K Singh and N. Newman- “Electrical properties of As-doped Se Mott-barriers”- submitted in Journal of Noncrystalline Solids


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