Thin film / semiconductor engineer

HUI-FENG (DANIEL) LIN

*** **** ***** ****** #**, New York, NY 10027

510-***-**** • **********@*****.***

QUALIFICATIONS SUMMARY

Well-credentialed Process Engineer with solid background in R&D for microfilm and semiconductor manufacture in clean room environments.

► Semiconductor Manufacturing Processes: Advanced technical proficiencies with III-V thin film deposition, photolithography, designing masks, and vacuum system hardware and software. Well-published industry authority for innovating and improving manufacturing techniques.

► MEMS Devices Fabrication and Analysis: Fully versed at innovating and executing AlN/GaN surface acoustic devices fabrication

► Research: Broad understanding of engineering lab processes. Talent for providing guidance to junior team members. Demonstrated ability to analyze findings and create concise, scientifically sound technical reports.

► Computer Proficiencies: Extensive experience with Cadence, Advanced Design System, and MATLAB. Hands-on experience configuring and operating MBE, STM, and RHEED ultra-high vacuum systems. Fully versed in operation and data analysis from network analyzers, RF Sputtering systems, and Mask Aligners. Complementary strengths in MS Office Suite.

► Key Strengths: Multilingual in Mandarin, English, and Japanese. Well-honed analytical and quantitative abilities. Equally effective working under self-direction or as contributor to larger team efforts. Effective presenter and communicator.

EDUCATIONAL BACKGROUND

M.S. in Electrical Engineering (10/2009)

COLUMBIA, UNIVERSITY, New York, NY GPA: 3.4

M.S. in Electrical Engineering (2004)

CHUNG YUAN CHRISTIAN UNIVERSITY, Jhongli City, Taiwan GPA: 4

B. S. in Electrical Engineering (2003)

CHUNG YUAN CHRISTIAN UNIVERSITY, Jhongli City, Taiwan GPA: 3.53

PROFESSIONAL EXPERIENCE

COLUMBIA UNIVERSITY, New York, NY

Research Assistant – Professor William Bailey (2008 – 2009)

Served as key research team member for developing iron and magnesium oxide (Fe/MgO) thin film membrane and MTJ structures. Set up, configured, and improved performance of MBE, RHEED, and STM ultra-high vacuum (UHV) systems. TrA1Ned team in UHV system operation.

 Proved viability of epitaxy for creating iron film using MBE vacuum system.

 Authored scientific report detailing findings.

CHUNG YUAN CHRISTIAN UNIVERSITY, Jhongli City, Taiwan

Teaching Assistant (2003 – 2004)

Taught Solid-State Sensor in Environment Protection Applications to undergraduate electronic engineering students. Proctored exams, assessed student performance, and assisted students struggling with difficult subject matter.

Research Assistant – Professor Hui-Ling Kao (2002 – 2004)

Performed National Science Council of Taiwan-sponsored research into A1N/GaN sapphire and GaN/sapphire devices and fabrication structures. Fabricated two different A1N/GaN/sapphire and GaN/sapphire SAW devices using experimental techniques.

 Deposited AlN films on epitaxial GaN films using low-temperature helicon sputtering method that reduced intrinsic problems resulting from constructing SAW devices on GaN/sapphire devices while concurrently enhancing piezoelectric properties.

 Created thin-film layered structure for SAW devices that, combined with low temperature deposition method for AlN and GaN, provides basis for development of high frequency components for use in semiconducting, optoelectronics, and piezoelectrics.

 Published findings in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control as first author and in Electronics Letters as second author.

PUBLICATIONS

1. Kao, H.L, Chen, W.C, Chien, W.C. Lin, H.F, Chen, T.C., et al, “Epitaxial A1N Thin Film Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System”, Japanese Journal of Applied Physics, Vol. 47, #1 pp.124-129, Jan 2008.

2. Lin, H.F., Wu, C.T., Chien, W.C., Chen, S.W., Kao, H.L., et al, “Investigation of Layered Structure SAW Devices Fabricated Using Low Temperature Grown A1N Thin Film on GaN/Sapphire”, IEEE Transactions on Ultrasonic, Ferroelectrics, and Frequency Control, Vol.52, #5, May 2005.

3. Chen, S.W, Lin, H.F, Sung, T.T., Wu, J.D, Kao, H.L., Chen, J.S., “Synthesis and Characteristics of A1N thin film fabricated on Si and GaN using helicon sputtering system”, DOI, 10.1049/el:20031088.

4. Lin, H.F, Chen S.W., Wu, C.T., Kao, H.L., Chen, J.S., “Design, Fabrication of A1N/GaN/Sapphire thin films layered SAW devices”, EDMS, pp.333-335, 2003.

5. Lin, H.F, Chen, S.W., Kao, H.L., “Modeling and design of sinc-weighted A1N layered SAW devices”, EDMS, pp. 569-572, 2003.

6. Lin, H.F., Chen, S.W., Sung, T.T., Kao, H.L., Chen, J.S., “Research of fabricating A1N/GaN/Sapphire structure layered SAW devices.

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