CVD,PVD, MOCVD and vacuum system design and buildup

XIN (John) ZHANG

**** ********* **. #***, *******, TX. 77054 Tel. 832-***-**** (cell )

Or

*** ****** ***** **, **********, NJ. 08536 e-mail: *****@*****.***

Materials/Thin Films Process Scientist/Engineer

Ceramics processing ~ Metal Oxide thin/thick film ~ Semiconductor Nitric Film

COMPETENCIES INCLUDE:

• Deposition of Metal Oxide Film on different Substrates by CVD (MOCVD, PECVD), PVD (e-beam Evaporation, DC/RF Sputter) and ALD technologies

• Deposition of Nitric Film (GaN, AlN) by MOCVD

• Hands-on knowledge regarding material characterization with XRD, SEM, EDS, TEM, RBS, SIMS etc.

• Extensive knowledge in MOCVD System Design and Setup

• Extensive knowledge in DC/RF Sputter system design and setup

• Experienced with PVD/CVD System Troubleshooting and Maintenance

• Hands-on experience in Vacuum System, Temperature Control System, Gas Flow Control System and Pressure Control System

• Familiarized with Design of Experience (DOE) and Labview program control.

• Practiced in cleanroom activities like Lithography technique, Material Etching (chemical etching and RIE) and Wafer processing

• Extensive experience in Ceramic Materials Processing

My strength is in combining/correlating the material properties from characterization with the material growth process and system design.

PROFESSIONAL EXPERIENCE

Texas Center for Superconductivity and Advanced Materials (TcSAM) University of Houston;

The Center for Advanced Materials (CAM), University of Houston

Scientist (01/2003-present) and Research Associate (1/1996-12/2002)

• Designed and assembled five sets Photo-Assisted Metal Organic Chemical Vapor Deposition (PhA-MOCVD) systems to fabricate navel metal oxide film on different substrates and GaN, AlN based semiconductor film, achieving stable process in both liquid and solid source delivery system.

• Utilize MOCVD system to deposit high critical current density (High-Jc) YBCO thin and thick films (0.2-8um in thickness, over 1MA/cm²) on different substrates.

• Deposit different metal Oxide thin/thick film such as: YSZ, STO, MgO, CeO2, CGD, GZO, LSCFO and Ni doped YSZ on different substrates by CVD and PVD

• Understood CCVD and IBD processing

• Deposit low temperature AlN and GaN film for buffer layer and high temperature GaN film for LED by MOCVD.

• Deposit Al2O3, ZrO2 film by ALD

• Extensive hands on knowledge of material characterization with various metrology instrumentation such as XRD, SEM, EDS, TEM, RBS, SIMS etc and use of that knowledge of correlated material’s structure and properties to improve the film growth process

• Familiarized with material etching (RIE, Chemical etching and Electric etching), lithography technique, materials polishing (mechanical polish and chemical polish) and Cleanroom class 100 and Cleanroom class 1000 activities.

Metal Oxide Technologies Inc. (Metox)

Scientist (Part time) (01/2003-2006)

• Designed and set up liquid state source Reel-to-Reel PhA-MOCVD system for 2G HTS tape manufacture.

• Designed the experiment project and deposited buffer layer (CeO2, MgO, and Y2O3) on the Textured Ni tape

• Deposited YBCO thick film on the buffered tape and the tapes thus obtained with LMO or CeO2 buffer that get from LANL, ORNL and home-made.

Ceramics Research Laboratory, Tianjin University, P.R.China

Engineer (07/85-01/96)

• Developed a process to create the Far Infrared Ceramics Powder.

 • Studied the process of tabular alumnae material at lower temperature.

The project was one of the National 85-Program of China. It had won approval from

the specialist group of the National 85-Program of China.

• Studied the Intergrading Agent for special use of AZS Beating Material.

• Developed a new SiO2-Al2O3 glue manufacturing process using the ion exchanging method. EDUCATION:

PhD, Material Science (evaluated, USA) 2000-2003

M.S., Material Science (Ceramics) 1990-1993

Department of Material Sci. & Eng., Tianjin University, China

B.S., Material Science (Ceramics) 1981-1985

Department of Material Sci. & Eng., Tianjin University, China

PATENT:

Superconductor Material on a Tape Substrate; 03811649.7-222-US0322796

PUBLICATIONS:

12 Published Technical Papers Available Upon Request

STATUS:

Permanent Resident of the United States

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