CV

Mikhail Basov

**.**.**** (** years old)

Current place of work: Moscow, Russia

Phone: +7-925-***-**-**

E-mail: adqteb@r.postjobfree.com

Education

Educational Institute: Moscow Engineering Physics Institute Time: September 2006 – February 2012

Faculty: automatic and electronic

Department: nano- and microelectronic

Specialty: MSc in Electrical and Electronics Engineering (electronics and automatics of physical devices) Additional education: PhD student

Educational Institute: Dukhov Automatics Research Institute (VNIIA) Time: May 2013 – current time

The Ph.D. thesis is titled “High Sensitive Pressure Sensor Chip Utilizing Bipolar Junction Transistors”

Experience

Company: Dukhov Automatics Research Institute (VNIIA) Time: April 2012 – current time

Position: R&D Engineer (Electrical and Electronics Engineering) Time: November 2010 – February 2012

Position: Trainee

Qualification and Professional skills

• Development of MEMS silicon chip construction for pressure sensor (based on piezoresistive and piezojunction effect) and microelectronic temperature sensor (based on Schottky diode and p-n junction): fundamental knowledge of solid-state physics for semiconductor device and MEMS, modeling, topology design and participation in fabrication process.

• Development and integration of microelectronic and MEMS fabrication processes for advanced semiconductor devices. I have 10+ years of experience in project management, conceptual organization of research, personal participation in development (from the theory to final product) and delegation of functionality in team.

• I’m able to support transfer of newly developed processes to production. Creation and use of new fab process ideas/concepts on wafers. Execution of process experiments to develop new process steps and modules to achieve functional prototypes.

• Management, control and hands-on practice in fabrication processes/equipment for BiCMOS processes: wet chemical treatments, lithography, doping processes (ion implantation, diffusion, annealing and oxidation), CVD processes of dielectric thin films, deposition of metals/conductive layers, creation of mechanical structures using wet (anisotropic and isotropic) and dry etching process, wafer I-V characteristic control, microassembly stages, packaging in a case and wire bonding.

• Characterization of the processes and process results. Design statistical experiments and perform testing per customer specific requirements. The big hands-on testing experiences of developments and mass products (MEMS and semiconductors devices) at the intermediate and final stage of fabrication (analysis in line / end of line). Ability to debug and characterize analog systems.

• Analysis of scientific and technical data, development/justification/use of the relevant multi- disciplinary methodological solutions for problems. Characterize new product architecture.

• Identification and solution the key issues within my domain of expertise. Communication and solving those issues in tight collaboration with inner team and external partners. I’m able to bring clarity over complexity and identify the essential bottlenecks of tasks.

• I have good reporting skills. I’m able to present technical results and choices clearly and concisely.

• Publication of completed works in famous journals with high impact by myself: preparation of presentable material/data within a framework of the requirements; discussion and proof of research relevance in communication with reviewers and editors; distribution of publication to increase the interest of third-party researchers and companies. Competent structure creation of legal documents in the form of patents. Presentation of projects in conferences.

• Languages: English Intermediate (B1 school certificate) and Russian (Native).

• Work with the software: Synopsys TCAD (G-2012.06), AutoCAD (Electrical 2020), NI Multisim

(v.12, 2016), MS Office (2019).

• Studying the software: ANSYS (14.5), Comsol Multiphysics (5.6), Matlab (R2018a). Personal qualities

• Priorities and pragmatic choices;

• Focused, systematic and customer results-oriented;

• Self-motivated;

• Ready for business travel (relocation);

• Hardworking person;

• Ability and desire to learn new technologies;

• Delegate effectively;

• Effective time management;

• Ready to work with new tasks;

• Good adaptation for new place;

• Interested in a longer-term commitment in a growing research group;

• Realistic.

Publications

Articles (10):

• M. Basov, “Schottky diode temperature sensor for pressure sensor,” Sensors and Actuators A: Physical, vol. 331, 112930, 2021, DOI: 10.1016/j.sna.2021.112930.

• M. Basov, “High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa”, IOP Physica Scripta, vol. 96, no. 6, 065705, 2021, DOI: 10.1088/1402- 4896/abf536.

• M. Basov, “Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging from -1 to 1 kPa,” IEEE Sensors Journal, vol. 21, no. 4, pp. 4357-4364, 2021, DOI: 10.1109/JSEN.2020.3033813

• M. Basov, “High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation,” Sensors and Actuators A: Physical, vol. 303, 111705, 2020, DOI: 10.1016/j.sna.2019.111705

• M. Basov, “Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier,” J. Micromech. Microeng., vol. 30, no. 6, 065001, 2020, DOI: 10.1088/1361-6439/ab82f1

• M. Basov, D. Prigodskiy, “Investigation of High Sensitivity Piezoresistive Pressure Sensors at Ultra-Low Differential Pressures,” IEEE Sensors Journal, vol. 20, no. 14, pp. 7646-7652, 2020, DOI: 10.1109/JSEN.2020.2980326

• M. Basov, D. Prigodskiy, “Development of High-Sensitivity Piezoresistive Pressure Sensors for - 0.5…+0.5 kPa,” Journal of Micromechanics and Microengineering, vol. 30, no. 10, 105006, 2020, DOI: 10.1088/1361-6439/ab9581

• D. Prigodskiy, M. Basov, “Research of Pressure Sensitive Elements with Increased Strength,” Nano- and Microsystem Technology, vol. 21, no. 6, pp. 368-376, 2019, DOI: 10.17587/nmst.21.368-376

• M. Basov, D. Prigodskiy, “Investigation of a Sensitive Element for the Pressure Sensor Based on a Bipolar Piezotransistor,” Nano- and Microsystem Technology, vol. 19, no. 11, pp. 685-693, 2017, DOI: 10.17587/nmst.19.685-693

• M. Basov, D. Prigodskiy, D. Holodkov, “Modeling of Sensitive Element for Pressure Sensor Based on Bipolar Piezotransistor,” Sensors and Systems, vol. 6, pp. 17-24, 2017 h-index: WoS – 6, Scopus – 5, Google Scholar – 8, Russian Citation Index – 5 Patents (10):

• M. Basov, “Pressure sensor with reduced power consumption temperature sensor and increased breakdown voltage”, RU 204992 U1 (22.06.2021)

• M. Basov, “Pressure sensor with ultra-reduced power consumption temperature sensor”,

RU 202558 U1 (24.02.2021)

• M. Basov, “Pressure sensor with reduced power consumption temperature sensor”,

RU 2730890 C1 (16.01.2020)

• M. Basov, B.I. Khimushkin, “Integral High-Sensitive Pressure Sensor Based on the Vertical Bipolar Junction Transistor”, RU 195159 U1 (16.01.2020)

• M. Basov, B.I. Khimushkin, “Integral Pressure Sensor Based on the Vertical Bipolar Junction Transistor with Temperature Compensation”, RU 195160 U1 (16.01.2020)

• M. Basov, B.I. Khimushkin, “Integral High-Sensitive Pressure Sensor Based on the Bipolar Junction Transistor”, RU 187760 U1 (18.03.2019)

• M. Basov, B.I. Khimushkin, “Integral Pressure Sensor Based on the Bipolar Junction Transistor with Temperature Compensation”, RU 187746 U1 (18.03.2019)

• M. Basov, D.M. Prigodskiy, “Pressure sensing element with high mechanical resistance”,

RU 187531 U1 (12.03.2019)

• M. Basov, B.I. Khimushkin, D.A. Kholodkov, “Integrated Pressure Sensitive Element of Transducer Utilizing Bipolar Junction Transistor”, RU 174159 U1 (06.10.2017);

• M. Basov, «Integrated Pressure Sensitive Element of Transducer with Temperature Sensor”,

RU 167464 U1 (10.01.2017)

Conference (12):

• M. Basov, “Pressure sensor with temperature sensor and mechanical overload protection”, Scientific and Technical Conference «Physical technical intelligent systems» (FTIS-2022), Moscow, Russia, 2022

• M. Basov, “Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor”, IEEE Sensors, Sydney, Australia, 2021, DOI: 10.1109/SENSORS47087.2021.9639504

• M. Basov, “Pressure sensor chip utilizing electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa”, XII International Scientific and Technical Conference «Micro-, and Nanotechnology in Electronics», Elbrus, Russia, 2021

• M. Basov, “Pressure sensor with temperature sensor and mechanical overload protection”, XV Research-technical conference (VNIIA 2021), Moscow, Russia, 2021

• M. Basov, “Highly sensitive and temperature compensated chip based on a BJT with a horizontal p-n-p structure”, XIV Russian conference of physical semiconductor, Novosibirsk, Russia, 2019, DOI: 10.34077/Semicond2019-437

• M. Basov, “Ultra high sensitivity pressure sensor chip with increased mechanical strength”, XIII Research-technical conference (VNIIA 2019), Moscow, Russia, 2019

• M. Basov, “Development of pressure sensors based on bipolar transistor”, XIII Russian conference of physical semiconductor, Yekaterinburg, Russia, 2018

• M. Basov, “Development of pressure sensing element based on bipolar transistor”, V All-Russian scientific youth conference «Actual problems of nano- and microelectronics», Ufa, Russia, 2018

• M. Basov, “Model of high sensitive element for pressure sensor based on bipolar transistor”, XII Research-technical conference (VNIIA 2018), Moscow, Russia, 2018

• M. Basov, “Pressure sensor based on bipolar piezotransistor”, XI Research-technical conference

(VNIIA 2017), Moscow, Russia, 2017

• M. Basov, “Study of the piezoresistive effect on bipolar transistor. Construction of sensitive element based on complex transistor in differential circuit”, VIII Research-technical conference

(VNIIA 2014), Moscow, Russia, 2014

• M. Basov, “Investigation of the electrical parameters of radiation-resistant high-voltage rectifier poles based on high-resistance silicon”, VII Research-technical conference (VNIIA 2013), Moscow, Russia, 2013

Awards (8):

• Innovative Leader in the Nuclear Industry. Grants by state corporation Rosatom (Moscow, Russia, 2019)

• Reviewer confirmation certificate of MDPI Publisher (2021)

• Certificate of Institute of Physics (IOP) trusted reviewer (2020)

• 1st place on the direction «Microelectronics» XV Research-technical conference «VNIIA 2021»

(Moscow, Russia, 2021)

• 2nd place on the direction «Microelectronics» XIII Research-technical conference «VNIIA 2019»

(Moscow, Russia, 2019)

• 2nd place on the direction «Microelectronics» XI Research-technical conference «VNIIA 2017»

(Moscow, Russia, 2017)

• 1st place on the direction «Microelectronics» VIII Research-technical conference «VNIIA 2014»

(Moscow, Russia, 2014)

• 2nd place on the direction «Microelectronics» VII Research-technical conference «VNIIA 2013»

(Moscow, Russia, 2013)

Article reviewer (23):

• D. Akay, U. Gökmen, S.B. Ocak, “Structural Role of Double Layer Amphoteric Oxides Forms on Electrical Conductivity: PbO/Zinc Oxide Semiconductor”, IOP Physica Scripta.

• J. Yu, Y. Lu, Q. Meng, Z. Yu, J. Qin, B. Xie, J. Chen, J. Wang, D. Chen, “An Electrostatic Comb Excitation Resonant Pressure Sensor for High Pressure Applications”, IEEE Sensors Journal

• J. Yao, C. Cheng, Y. Lu, B. Xie, J. Chen, D. Chen, J. Wang, T. Chen, “A Low-Temperature- Sensitivity Resonant Pressure Microsensor Based on Eutectic Bonding”, IEEE Sensors Journal, DOI: 10.1109/JSEN.2022.3164946

• P. Thawornsathit, E. Juntasaro, H. Rattanasonti, P.Pengpad, K. Saejok, C. Leepattarapongpan, E. Chaowicahrat, W. Jeamsaksiri, “Mechanical Diaphragm Structure Design of a MEMS based Piezoresistive Pressure Sensor for Sensitivity and Linearity Enhancement”, Engineering Journal

• S. Jindal, K. Reddy, H. Chandrasekhar, D. Kanekal, “Prefabrication Analysis and Numerical Modeling of Freely Supported MEMS Piezoresistive Pressure Sensor Employing Square Shaped Silicon Diaphragm for Better Usability in Harsh Environmental Conditions”, IEEE Sensors Journal

• V. Belwanshi, S. Philip, A. Topkar, “Performance Study of MEMS Piezoresistive Pressure Sensors at Elevated Temperatures”, IEEE Sensors Journal

• Z. Shen, X. Wang, Q. Li, B. Ge, L. Jiang, J. Tian, S. Wu, “A high sensitivity vacuum diode temperature sensor based on barrier lowering effect”, MDPI Micromachines, 13(2), 286, 2022, DOI: 10.3390/mi13020286

• D. Čoko, I. Stančić, L.D. Rodić, D. Čošić, “TheraProx: Omnidirectional capacitive proximity sensing”, MDPI Electronics, 11(3), 393, 2022; DOI: 10.3390/electronics11030393

• L. Xiao, L. Chen, F. An, “A 14.39 ppm/kPa Mechanical Stress Sensor with 30.34 ppm/C Temperature-drift Oscillator for Flip-chip Packaging”, IEEE Transactions on Circuits and Systems II

• R. Chuai, Y. Yang, B. Zhang, G. Jiang, H. Zhang, X. Li, “Overload Characteristics of the Capacitive Pressure Sensitive Chip with Linkage Film”, MDPI Micromachines

• T. Li, H. Shang, B. Wang, C. Mao, W. Wang, “High-pressure Sensor with High Sensitivity and High Accuracy for Full Ocean Depth Measurements”, IEEE Sensors, vol. 22, no. 5, pp. 3994- 4003, 2022, DOI: 10.1109/JSEN.2022.3144467

• C. Gao, D. Zhang, “The Establishment and Verification of The Sensitivity Model of The Piezoresistive Pressure Sensor Based on the New Peninsula Structure”, IEEE Journal of Microelectromechanical Systems, 2022, DOI: 10.1109/JMEMS.2022.3150909

• N. Krakover, B.R. Ilic, S. Krylov, “Micromechanical Resonant Cantilever Sensors Actuated by Fringing Electrostatic Fields”, IOP Journal of Micromechanics and Microengineering, DOI: 10.1088/1361-6439/ac5a61

• M. Mansuri, A. Mir, A. Farmani, “Sensitivity enhancement of nanoparticle localized surface plasmon resonance pressure sensor based on the MoS2 monolayer for ultra-wide range pressure detection”, Optical Materials

• “Novel Multi-reserve Pools Based Echo State Network for Industrial Soft Sensor Applications”, ISA Transactions

• T. Wejrzanowski, E. Tymicki, T. Plocinski, J. J. Bucki, T. L. Tan, “Design of SiC-doped piezoresistive pressure sensor for high-temperature applications”, MDPI Sensors, vol. 21, no. 18, 6066, 2021, DOI: 10.3390/s21186066.

• P. Subham, S. Panda, “Piezoelectric Devices in Biomedical Applications”, Academia Letters, 1407, 2021, DOI: 10.20935/AL1407.

• K. Mosshammer, T. Lüdke, S. Spitzner, D. Firzlaff, K. Harre, H. Kleemann, M. Neudert, T. Zahnert, K. Leo, “Bio-compatible sensor for middle ear pressure monitoring on a bio-degradable substrate”, Frontiers in Electronics, vol. 2, 2021, DOI: 10.3389/felec.2021.802356

• X.-J. Su, C.-L. Luo, W.-G. Yan, J.-Y. Jiao, J. Zhao, Z. Liu,D.-Z. Zhong, “Microdome-Tunable Graphene/Carbon Nanotubes Pressure Sensors based on Polystyrene PS Array for Monitoring of Biosignals”, IOP Materials Research Express, 14(23):7385, 2021, DOI: 10.3390/ma14237385

• A.A. Alsaç, T. Serin, S.O. Tan, Ş. Altındal, “Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures”, IEEE Sensors, vol. 22, no. 1, pp. 99-106, 2022, DOI: 10.1109/JSEN.2021.3127130

• X. Wang, S.X. Mao, “Advances in Atomic-Scale Frictions with Stick-slip and Super-lubricity”, International Journal of Metallurgy and Metal Physics, 6:069, 2021, DOI: 10.35840/2631- 5076/9269

• P. Zhao, P. Wu, D. Zhang, X. Ding, Y. Jiang, “Cantilever-based differential pressure sensor with a bio-inspired bristled configuration”, IOP Bioinspiration & Biomimetics, 16, 055011, 2021, DOI: 10.1088/1748-3190/ac1919

• Samridhi, K. Singh, P.A. Alvi, “Influence of the pressure range on temperature coefficient of resistivity (TCR) for polysilicon piezoresistive MEMS pressure sensor,” IOP Physica Scripta, vol. 95, no. 7, 075005, 2020, DOI: 10.1088/1402-4896/ab93e7 Main resources with information about author (h – Hirsch index, c – citation):

• ResearchGate (h = 9, c = 264)

• Google Scholar (h = 8, c = 112)

• Publons or Web of Science (h = 6, c = 48)

• Scopus (h = 5, c = 48)

• Dimensions (h = 6, c = 77)

• SemanticScholar (h = 7, c = 84)

• Lens (h = 6, c = 55)

• Elibrary or Russian Citation Index (h = 5, c = 79)

• Scinapse (h = 6, c = 41)

• Academia

• LinkedIn

• ArXiv

• ORCID

• Loop

• TechRxiv

• ResearchSquare

• OSF

• Google Patents

• Espacenet

• Glassdoor

Contact this candidate