Hakim TAHI

**** ******** ******

Philadelphia, PA, 19111

H (1-267-***-****)

B admcmv@r.postjobfree.com

"The only way to do great work is to love what

you do." - Steve Jobs

Education

June–1997 Baccalaureat of secondary education deploma, Algeria. 1997–2001 Engineer in Electronics, The University MOULOUD MAMMERI, TIZI-OUZOU.

2002–2005 Master’s Degree (Magister) in Microelectronics, The University MOULOUD MAMMERI, TIZI-OUZOU, Algeria.

2008–2012 Doctorate Degree in Microelectronics, University of M’HAMED BOUGARA, BOUMERDES, Algeria.

December-

2017

Habilitation to Supervise Research, University of M’HAMED BOUGARA, BOUMERDES, Algeria.

Experience

Internships

2007–2021 Researcher, at Microelectronics and Nanotechnologies Division, Center for Development of Advenced Technologies (CDTA), Algeria. Achievements:

{ PCB Design using proteus and Kicad softwere

{ Automation of characterization instruments using LabView: Precision Semiconductor Parameter Analyzer, LCR meter, Wafer probe station (Cascade), Scope, wave generator, electrometer ...ect.

{ MOSFET devices characterization using Current-Voltage(I-V), Charge pumping(CP),Capacitan cevoltage (CV), On-the fly measurements techniques OTFIT, OTF-two point, OTFOT... ect

{ MOSFET devices reliability analysis such as: Negative bias temperature instability

(NBTI), Radiation effect (Total ionizing dose TID).

{ Metal oxide thin film deposition and caracterization such as SnO2 and VO2.

{ Actual research interests include CMOS technologies reliability,especially electrical characterization and modeling of negative bias temperature instability effect. 1/8

Project manager:

{ Investigation of microstructure defects responsible of MOS degradation,projet FNR : N 48/FCS /DMN/CDTA /Programme 2014-2016;

{ International projet JEM-EUSO (coordinator of Algerian Photomultiplier group (2013- 2015)

Articles Reviews

Reviewer in: IEEE, Transactions on Electron Devices, TED Reviewer in : IEEE, Electron Letter EDL;

Reviewer in : Journal of applied physics JAP;

Reviewer in : IEEE, Transactions on Device andMaterials Reliability; Reviewer in : Elsevier, Microelectronics Reliability MR; Reviewer in : Electronics letter.

Computer Skills

Basic : Python

Intermediate :Silvaco

Advanced :LabieW, Origin, proteus, Kicd

Languages

English Intermediate

French Advanced

Arabic Advanced

Publications and communications

Articles in Peer-Reviewed Journals

2021 Hakim Tahi, Boualem Djezzar, and Timlelt Hakima, Capacitance-Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET-Part I: Concept and Implementation, will be publicashed in IEEE Transactionson Transactions on Electron Devices,vol. 68, no.5, pp.1-8, May 2021. 2021 Hakim Tahi, Boualem Djezzar and Timlelt Hakima, Capacitance-Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET-Part II: Measurements and Parameter Extractions, will be publicashed in IEEE Transactionson Transactions on Electron Devices,vol. 68, no.5, pp.1-8, May 2021..

2/8

2020 Boualem Djezzar, Abdelmadjid Benabdelmoumene, Boumediene Zatout, Dhiaelhak Messaoud, Amel Chenouf, Hakim Tahi, Mohamed Boubaaya, Hakima Timlel, Recovery investigation of NBTI-induced traps in n- MOSFET devices, Microelectronics Reliability, vol.110, p.113703, June 2020

2019 A.L. S. Hassein-Bey, Abdelkader Hassein- Bey, Hakim Tahi, Slimane Lafane, Samira Abdelli-Massaci, Mohamed El Amine Benamar, Voltage Tuning Effect on Metal- Insolator Phase Transitions in Vanaduim Dioxide Thin Film,ASM Science journal, specail Issue,no.4, Dec 2019. 2019 M. Maoudj, N. Bouhafs, A. Bourouba, El Amrani, H. Tahi Hamida- Ferhat, Behavior of SiNx/SiO2 Double Layer for Surface Passivation of Compensated p-Type Czochralski Silicon Wafers, Journal of Electronic Materials, vol. 48, no.6, pp. 4025-4032, June 2019. 2019 Cherifa Tahanout,Hakim Tahi,Bouchera Nadji, Lotfi Hocini, Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices, International Journal of Electronics Letters,2019 2017 Hakim Tahi, Cherifa Tahanout, Mohamed Boubaaya, Boualem Djezzar, Sidi Mohammed Merah, Bacharia Nadji, Nadia Saoula,Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Un- der Low Magnetic Field, IEEE Transactions on Device and Materials Reliability, vol. 17, no.1, pp. 99 105, Murch. 2017. 2017 JEM EUSO Members (Hakim Tahi), Cosmic ray oriented performance studies for the JEMEUSO first level trigger, Nuclear Inst. and Methods in Physics Research, A, (2017) 150-163

2017 JEM EUSO Members (Hakim Tahi),Meteor studies in the framework of the JEM-EUSO program, Planetary and Space Science, Vol.143, pp.245- 255, Sep. 2017.

2016 Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Hakim Tahi, On the Circuit -level Reliability Degradation Due to AC NBTI Stress, IEEE Transactions on Device and Materials Reliability, vol. 16, no.3, pp. 290-297, Sept. 2016.

2016 A Benabdelmoumene, B Djezzar, A Chenouf, Hakim Tahi, B Zatout, M Kechouane, On the turn-around phenomenon in n-MOS transistors under NBTI conditions, Solid-State Electronics, vol. 121, pp. 34-40, Jul.2016. 2015 Hakim Tahi, Cherifa Tahanout,Boualem Djezzar, Abdelmadjid Benabdel- moumene, Amel Chenouf, Charge Pumping, Geometric Component and Degradation Parameters Extraction in MOSFET Devices, IEEE Transac- tions on Device and Materials Reliability, vol. 15, no.4, pp. 567-575, Dec. 2015.

3/8

2015 M.S Merah, Becharia Nadji,Hakim Tahi, Low magnetic field Impact on NBTI degradation, Elsevier: Microelectronics Reliability, vol.55, no.9-10, pp. 14601463, Aug. 2015.

2015 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil Youcef Kribes, On the permanent compo- nent profiling of the negative bias temperature instability in p-MOSFET devices, Elsevier: Solid-State Electronics, vol. 106, pp.54-62, April 2015. 2014 Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil, Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique, Elsevier: Microelectronics Reliability, vol.54, no.5, pp. 882-888, May 2014. 2014 Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benab- delmomene, MohamedGoudjil, Becharia Nadji, An Accurate Combination of onthe-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction, Vol.30, no. 4, pp. 415-423, Aug.2014. 2013 Hakim Tahi, Boualem Djezzar and Abdelmadjid Benabdelmoumene A New Procedure for Eliminating the Geometric Component from Charge Pumping: Application for NBTI and Radiation Issues, Elsevier: Micro- electronicsReliability, vol.53, no. 4, pp. 513-519 April 2013. 2013 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, and Amel Chenouf, A Propagation Concept of Negative Bias Temperature Instability a long the Channel Length in p-Type Metal Oxide Field Effect Transistor, Elsevier: Solid-State Electronics, vol.82, pp.46-53, April 2013. 2012 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, Amel Chenouf, and Youcef Kribes A NewMethod for Negative Bias Temper- ature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors,Japanese Journal of Applied Physics, 51-116602, Nov. 2012. 2011 Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Bacharia Nadji and Youcef Kribes, Geometric Component in Constant-Amplitude Charge Pumping Characteristics of LOCOS-and LDD-MOSFET Devices, IEEE Transactions on Device and Materials Reliability, vol. 10, no. 4, March 2011.

2011 Hakim Tahi, Boualem Djezzar, and Bacharia Nadji, Modeling and Sim- ulation of Charge-Pumping Characteristics for LDD-MOSFET Devices with LOCOS Isolation, IEEE Transactions on electron Devices, vol. 57, no.11, pp. 2892-2901, Nov. 2010

2010 Hakim Tahi, Boualem Djezzar, and Bacharia Nadji, Radiation Effect Evaluation in Effective Shortand Narrow Channel of LDD-Transistor with LOCOS-Isolation Using OTCP Method, IEEE Transactions on Device and Materials Reliability, vol. 10, no.1, pp.108-115, Mar. 2010. 4/8

2010 Boualem Djezzar, Hakim Tahi, Using Oxide-Trap Charge-Pumping Method in Radiation Reliability Analysis of Short Lightly Doped Drain Transistor, IEEE Transactions on Device and Materials Reliability, vol.10, no.1, pp. 18-25, Mar. 2010.

2009 Boualem Djezzar, Hakim Tahi, and ArizkiMokrani, Why is oxide-trap charge pumping method appropriate for radiation-induced trap depiction in MOSFET?, IEEE Transactionson Deviceand Materials Reliability, vol. 9, no.2, pp. 222-230, Jun. 2009.

International Communications

2018 A.L. S. Hassein-Bey, Abdelkader Hassein- Bey Hakim Tahi, Slimane Lafane, Samira Abdelli-Massaci, Mohamed El Amine Benamar, Sub- strate Effect on Electrical Properties of Vanadium Oxide Thin Film for Memristive Device Applications, IEEE-ICSE2018 Proc. 2018, Kuala Lumpur,Malaysia.

2017 Hakim Tahi, Cherifa Tahanout, Mohamed Boubaaya, Multi-Frequencies Low Field Spin Dependent Charge Pumping Technique for Defect Atomic Scale Identification, The 5th International IEEE Conference on Electri- cal Engineering Boumerdes (ICEE-B) October 29-31, 2017, Boumerdes, Algeria.

2016 A.L.S.Hassein-Bey, Hakim Tahi, SlimaneLafane, Amina Zouina Ait Djafer, Abdelkader Hassein-Bey,Nadir Belgroune,Substrate Effecton Electrical Properties of Vanadium Oxide Thin Film for Memristive Device Applica- tions, IEEE-ICSE 2016 Proc. 2016, Kuala Lumpur, Malaysia. 2015 Cherifa Tahanout, Hakim Tahi M. Boubaaya, B. Djezzar, M. Marah, B. Nadji, N. Saoula, NBTI stress on power VDMOS transistors under low magnetic field, proceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 11-15 Oct. 2015, pp.147-150. 2015 M. Boubaaya, Hakim Tahi, Cherifa Tahanout, B. Djezzar, A. Benabdel- momene, A. Chenouf, D. Doumaz Using the charge pumping geometric component to extract NBTI induced mobility degradation, proceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 11-15 Oct. 2015, pp.147150.

2014 Hakim Tahi, Karim Benmessai, Jean Michel Le Floch,Mohamed Boubaaya, Cherifa Tahanout,Boualem Drezzar, Abdelmadjid Benabdel- momene,Mohamed Goudjil, and Amel Chenouf, Investigation of NBTI Degradation on power VDMOS Transistors under Magnetic Field, pro- ceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 12-16 Oct. 2014, pp.139-142.

5/8

2012 Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdel- moumene and Amel chenouf and Becharia NADJI, Oxide Trap Annealing by H2 cracking at E Center under NBTI Stress, proceeding of IEEE International Conference on Microelectronics (ICM), 16-20 Dec. 2012. 2014 Mohamed Boubaaya, Hakim Tahi, Boualem Djezzar, Karim, Benmassai, Abdelmadjid Benabdelmoumene, Mohamed, Goudjil, Djamila Doumaz, Abdelhak Feraht Hemida, Reaction-Diffusion Model for interface traps induced by BTS stress including H+, H and H2 as Diffusion Species, proceeding of IEEE, Design and Test Symposium (IDT), 16-18 Dec. 2014, pp.1-5.

2014 Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmomene, Hakim Tahi, and Mohamed Goudjil, Reliability Analysis of CMOS Inverter Subjected to AC and DC NBTI Stresses, proceeding of IEEE, Design and Test Symposium (IDT), 16-18 Dec. 2014, pp. 142-146. 2014 Abdelmadjid Benabdelmomene, Boualem Djezzar, Hakim Tahi, Amel Chenouf,Mohamed Goudjil, et el Does NBTI Effect inMOS Transis- tors Depend on Channel Length?, proceeding of IEEE, International Conference on Microelectronics (ICM), 14-17, Dec. 2014, pp. 52-55. 2013 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, Amel Chenouf,Mohamed Goudjil,Youcef Kribes, On the permanent components of negative bias temperature instability, 25th International Conference on Microelectronics (ICM), 15-18 Dec. 2013.

2012 Amel Chenouf, Boualem Djezzar, Abdelmadjid Benadelmoumene, Hakim Tahi, Deep experimental investigation of NBTI impact on CMOS inverter reliability, 24th International Conference on Microelectronics (ICM), 16-20 Dec. 2012. pp.1-4.

2012 Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf,Leonard Trombetta, Mohamed Kechouane, Two-points capaci- tancevoltage (TPCV) concept: A new method for NBTI characterization, IEEE International Integrated Reliability Workshop Final Report (IIRW), 14-18 Oct. 2012, pp.175-178

2012 Hakim Tahi, Boualem Djezzar, and Abdelmadjid Benabedelmoumene, On-TheFly Extraction Method for Interface, Oxide Traps andMobility Degradation Induced by NBTI Stress, proceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 14-18 Oct. 2012, pp. 113-116.

2012 Amel chenouf, Boualem Djezzar, Abdelmadjid Benabedelmoumene, Hakim TAHI, Does PMOS VTH ShiftWholly Capture the Degradation of CMOS Inverter Circuit under DC NBTI?, proceeding of IEEE Interna- tional Integrated Reliability Workshop Final Report (IIRW), 14-18 Oct. 2012, pp. 191-194

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2012 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, FaÃğal Hadjlarbi, and Amel Chenouf, On The Fly Oxide Trap (OTFOT) Con- cept: a NewMethod for Bias Temperature Instability Characterization, proceeding of IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2-6 July 2012, pp.1-5. 2012 Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, and Amel Chenouf, An Accurate ExtractionMethodology for NBTI Induced Degradation Using Charge Pumping Based Methods,proceeding of IEEE International Conference on Microelectronics (ICM), 16-20 Dec. 2012, pp.1 - 4.

2012 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, and Amel Chenouf, A New Eye on NBTI-Induced Traps up to Device Lifetime Using on the Fly Oxide Trap Method proceeding of IEEE International Conference on Microelectronics (ICM), 16-20 Dec.2012,pp. 164-168. 2012 Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdel- moumene and Amel chenouf and Becharia NADJI,Oxide Trap Annealing by H2 cracking at E Center under NBTI Stress,proceeding of IEEE International Conference on Microelectronics (ICM), 16-20 Dec. 2012. 2012 Abdelmadjid Benabdelmoumene, Boualem Djezzar,HakimTahi, and Amel Chenouf, ANovel Method based On Capacitance-Voltage for Negative Bias Temperatures Instability Studies: Concept and Results, proceeding of IEEE International Conference on Microelectronics (ICM) 2012. 2011 Becharia Nadji, Hakim TahiâĂđ Boualem Djezzar, Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices, proceeding of IEEE International Conference on Quality and Reliability (ICQR), 2011, 14-17 Sept. 2011, pp. 469 - 472. 2011 Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, Geo- metriccomponent modeling in charge-pumping technique, proceeding of IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 4-7 July 2011, pp.1-5

2010 HakimTahiparticipation: first Algerian Winter School On Smart Card, December 19-23, 2010, Algeria

2009 Boualem Djezzar, Hakim Tahi, and Arezki Mokrani, Oxide-trap charge- pumping for radiation reliability issue in MOS devices, proceeding of IEEE Design and Technology of Integrated Systems in Nanoscal Era, 2009. DTIS-09, 6-9 April 2009, pp. 287-292

2009 Boualem Djezzar, Hakim Tahi, Arezki Mokrani, UsingOxide-Trap ChargePumping method in radiation reliability analysis of short lightly doped drain transistor, Radiation and Its Effects on Components and Systems (RADECS), 14-18 Sept. 2009, pp.54-60.

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2009 Boualem Djezzar, Hakim Tahi, Arezki Mokrani, Oxide-trap charge- pumping for radiation reliability issue in MOS devices, 4th International Conference on Design and Technology of Integrated Systems in Nanoscal Era, 6-9 April 2009, pp. 287-292.

2009 Abdelmadjid Benabdelmoumene, Boualem Djezzar,Hakim Tahi, Rafik Serhan, effet de recuit isochrone sur les transistors MOSFET irradies :vu par OTCP, 1 ere Séminaire National sur les Matériaux et leurs application SENAMAP-09, USTHB- Alger 7-9 Dec-2009.

2007 Hakim Tahi,Influence du traitement thermique haute température sur les propriétés optiques des couches minces de SnO2 oral présenta- tion:Conference Internationale sur les Énergies Renouvelable le Développe- ment durable, 21-24 MAI 2007, TLEMCEN

2006 Hakim Tahi,Messaoud Boumaour, Razika Talaighil, Measurement of square resistance in situ of SnO2 : F thin film with. Annealing at high temperature under air, oral presentation, International Conference in micro and nanotechnologies ICNMT 2006, pp.19-22 Nov 2006. TIZI

-OUZOU

Patents

2016 Brevet INAPI: Tahi hakim,Rabhi Chafik, Tahanout Cherifa, Dellaa Djamel, Timlelt Hakima, Djezzar Boualem, Dispositif d’intégration des techniques de résonances paramagnétiques de spin dans un testeurs sous pointes INAPI-N :160529

Technical Reports

2017 Low Cost and Portable Electrically Detected Magnetic Resonance Spec- trometer for MOS Device Characterization, Technical rapport 2017, DOI: 10.13140/RG.2.2.24382.74565

2015 Implementation de la spectroscopie EDMR (Electricaly DetectedMagnetic resonance),Technical rapport,DOI:10.13140/RG.2.2.21866.1632 8/8

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