Tashfin Hossain

III-V Semiconductor, Epitaxial thin film growth/Dry Etch, and Data analysis

# 336-***-**** # adijaf@r.postjobfree.com # New Mexico, NM 87144 Core capabilities

§ Hands-on experience in building custom experimental setup and Epitaxial growth

§ Silicon photonics and III-V Semiconductor thin film growth (PECVD, PVD, HVPE, CVD, ALD, and MOCVD)

§ Materials Characterization: C-V, I-V, Hall-effect, XRD, RAMAN, SEM, FTIR, XPS, AFM, GC-MS, and BET

§ Device fabrication in cleanroom environment (Photolithography, DRIE, e-beam evaporation)

§ Experienced in Design of experiments (DOE) and Statistical process control (SPC)

§ Computer skills: JMP, KLayout, SQL, R, TCAD, C++, SolidWorks, LabVIEW, MATLAB, and Python Education

Ph.D. (Chemical Engineering) Kansas State University Dec 2013 Dissertation: “Electrical Characteristics of GaN and Si Based Metal-Oxide-Semiconductor (MOS) Capacitors” M.S. (Chemical Engineering) North Carolina A&T State University Dec 2009 B.Sc. (Chemical Engineering) Bangladesh University of Engineering and Technology Aug 2001 Employment experience

Process Integration Engineer – Silicon Photonics

Intel Corporation, New Mexico, NM July 2019- present

§ Responsible for the quality of III-V semiconductor based epitaxial thin film using SPC chart

§ Root cause analysis and risk assessment by investigating SPC chart, yield, defect, device, and reliability parameters in a 300 mm high volume manufacturing facility

§ Experienced in Klarity, KLayout and extensive data analysis using JMP, SQL, R, Python and other scripts Process Engineer

Aramco Performance Materials, Process Development Division, Rochester, NY January 2018- June 2019

§ New product introduction/startups (NPI), development and long-term reliability testing

§ Executed Design of Experiments (DOE) to optimize process conditions and quality control using SPC chart

§ Manufacturability/capacity analysis (Cpk in JMP) Postdoctoral Research Associate & Adjunct Faculty September 2016- December 2017 North Carolina A&T State University, Greensboro, NC

§ Performed Deep Reactive Ion Etching (RIE) of silicon following Bosch process (Alcatel-DRIE) and Al/Ti metal sputter deposition using the PVD tool of Kurt J. Lesker

§ Electroless composite metal deposition on membrane for Hydrogen separation

§ Characterized materials using BET, XRD, FTIR, XPS, TGA, GC-MS and used SEM-EDX

§ Taught “Reaction Engineering” in the Chemical Engineering Department, fall 2017 Postdoctoral Fellow March 2016-August 2016

Chemical Engineering Department, Kansas State University, Manhattan, KS

§ Performed crystalline growth of III-V Semiconductor Material (BP) using Chemical vapor deposition (CVD)

§ Performed 3D-modeling of CVD reactor using SolidWorks to investigate vortex formation around susceptor

§ Accomplished surface characterization of the Boron phosphide film using SEM, XRD and RAMAN spectroscopy Materials Scientist April 2014- February 2016

Nitride Solutions Incorporated, Wichita, KS

§ Hands-on experience to successfully optimize RF Plasma etch and plasma enhanced chemical vapor deposition

(PECVD) process to create III-V Semiconductor, AlN of high breakdown voltage on heat sink material.

§ Contributed to improve the HVPE process to grow III-V Semiconductor, AlN on sapphire

§ Contributed to bulk crystal growth of III-V Semiconductor by sublimation-recondensation method

§ Identified epitaxial film defects using XRD and film thickness by Spectral reflectance

§ Hands-on experience dealing with vacuum pumps, sensors, valves, vacuum feedthrough, Swagelok & VCR fittings Graduate Research Assistant, Ph.D. Jan 2010-Dec 2013 Chemical Engineering Department, Kansas State University

§ Performed electrical characterization (C-V) of MOS devices to determine semiconductor-dielectric interface trap density and leakage current density (I-V) using Keithley 4200 and HP4284 LCR meter

§ Investigated the effect of wet etch of the semiconductor surface and high-k dielectric atomic layer deposition (ALD) temperature for the Gallium nitride (GaN) and Silicon based metal-oxide-semiconductor devices Graduate Research Assistant, M.S. Aug 2007-Dec 2009 Chemical Engineering Department, North Carolina A&T State University, Greensboro, NC

§ Played a key role to modify experimental setup by transforming liquid carbon dioxide to supercritical state

§ Built a custom chamber of inert atmosphere to prepare hydrophobic ceramic membranes by attaching functional groups using modifying agents

§ Experienced in analytical techniques (SEM-EDX, FTIR and contact angle measurement) Senior Gas Plant Operations Specialist Sep 2004-Aug 2007 Chevron Corporation, Bangladesh

§ Provided support in commissioning and start-up of two Natural gas processing plants

§ Worked extensively on DCS, PLC and SCADA to monitor and control the natural gas processing plant units

§ Reviewed the PFDs, P&IDs, and Standard Operating Procedure (SOP).

§ Contributed in process optimization during gas plant capacity expansion by leading the process engineers Production Officer Sep 2001-Aug 2004

Beximco Synthetics Limited, Bangladesh

§ Successfully performed operation of a polyester filament yarn processing plant by proper supervision of the process and minimized production loss during process instability.

§ Coordinated with laboratory, utility and maintenance departments to ensure high quality yarn production Peer reviewed publications

1. Tashfin Hossain, Geoffrey D. Bothun & Shamsuddin Ilias, “Transport of liquid and supercritical CO2 and selected organic solvents through surface modified mesoporous γ-alumina and titania membranes”, Separation Science and Technology,1-14, 2019.

2. T. Hossain, D. Wei, N.Y.Garces, N. Nepal, J.K.Hite, Michael A. Mastro, C. R. Eddy Jr., H. M. Meyer III and J. H. Edgar, “Effect of GaN surface treatment on Al2O3/n- GaN MOS capacitors”, Journal of Vacuum Science and Technology B 33, 061201, 2015.

3. T. Hossain, D. Wei, N. Nepal, N.Y. Garces, J.K. Hite, H.M. Meyer III, C.R. Eddy Jr., Troy Baker, Ashley Mayo, Jason Schmitt and J. H. Edgar, “Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN”, physica status solidi (c), Vol 11, Issue 3-4, pp 565-568, 2014. 4. D. Wei, T. Hossain, D.P. Briggs and J. H. Edgar, “A Comparison of N-Polar (0001) GaN Surface Preparations for the atomic Layer Deposition of Al2O3”, ECS Journal of Solid State Science and technology, 3 (10) N127- N131, 2014.

5. D. Wei, T. Hossain, N. Nepal, N. Y. Garces, J.K. Hite, H. M. Meyer III, C. R. Eddy, Jr., J. H. Edgar, “Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m-plane GaN”, physica status solidi

(c), Vol 11, Issue 3-4, pp 898-901, 2014.

6. D. Wei, T. Hossain, N.Y.Garces, N. Nepal, H. M. Meyer III, M.J. Kirkham, C. R. Eddy Jr. and J. H. Edgar,

“Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor”, ECS Journal of Solid State Science and Technology, Volume 2, Issue 5, pp. N110-N114, 2013. 7. Tashfin Z. Hossain, Daming Wei and James H. Edgar, “Electrical Characteristics of GaN and Si Based Metal- Oxide-Semiconductor (MOS) Capacitors”, ECS transactions, Volume 41, Issue 3, pp. 429-437, 2011. Awards

§ Kansas State University Graduate Student Council (GSC) Travel Award, Fall 2013

§ Certificate of Achievement from N.C. A&T State University for outstanding academic performance (2009)

§ Undergraduate Merit Scholarship: Bangladesh University of Engineering & Technology, 1998 US Immigration status: Green card holder

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