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Research Assistant

Location:
Riverside, CA
Posted:
April 28, 2020

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Resume:

Zhenjun (Crystal) Cui

Address: **** ******** **** **. ********* CA 92507 Cell: 951-***-**** adcz3z@r.postjobfree.com

PROFESSIONAL SUMMARY

* *****’ research experience in Semiconductor Epitaxy, Device Fabrication, Characterization and Facility Maintenance

Leading projects of dielectric breakdown test, failure analysis and non-volatile memory application on 2D hexagonal boron-nitride (h-BN) based Metal-Insulator-Metal (MIM) devices

Experienced in structural, optical and electrical characterizations on semiconductors and devices

EDUCATION

University of California, Riverside

CA, USA

Master of Electrical and Computer Engineering GPA: 3.90/4.0 09.2016-12.2019

Southeast University

Nanjing, China

Bachelor of Materials Science and Engineering GPA: 3.14/4.0 09.2011-03.2016

RESEARCH EXPERIENCE

Quantum Structure Laboratory, UCR and UCR Cleanroom 09.2016 – now

Thin Film Deposition

Molecular Beam Epitaxy (MBE): high Mg incorporated wurtzite ZnO thin film for deep UV photodetector and light emitting diode (LED) implementation

Chemical Vapor Deposition (CVD) Tube furnace: ZnO nanowire with high optical efficiency, gate oxide deposition on SiC and Si wafers

Physical Vapor Deposition (PVD): metal deposition by E-beam Evaporator and Ion Beam Sputtering

Knowledge of electrochemical deposition (ECD) and electroplating process

MIM Device Fabrication based on 2D Hexagonal Boron Nitride (h-BN) Film

Monolayer h-BN (0.33nm) was grown by MBE

MIM devices were fabricated starting from the Photolithography pattern transfer by spinning coating photoresist, soft baking, mask alignment, and developing

Metal (Ni, Co, Au)deposition by Sputtering or E-beam Evaporator

Lift off and Plasma etching was performed to ensure the isolation between devices

Nanoscale Characterization

Optical analysis by Absorption, Raman, PL on ZnO epitaxy film

Electrical test by EL, I-V, Hall coefficient on ZnO film and ZnO based Deep UV LED

Structural characterization by AFM, SEM on h-BN, Ellipsometer, Profilometer, SEM on Ga2O3

PROJECTS

Dielectric Breakdown Study of 2D H-BN

Breakdown I-V, I-T curve trace characterization was done on MIM devices by probe station and electrical analyzer

Statistical analysis including Gauss and Weibull distribution on breakdown voltage was summarized for the h-BN dielectric strength and breakdown mechanism study

Resistive Random Access Memory (RRAM) of 2D H-BN

Non-volatile Bipolar and Unipolar resistive switching characteristics including endurance, on/off ratio, and reliability were characterized by I-V and I-T measurement on MIM devices

Volatile Threshold switching characteristics were tested

The conversions between non-volatile and volatile events were studied

MENTORSHIP

Instructor of junior graduate student: MBE operation and methods of sample characterization

Teaching Assistant of Semiconductor Device Processing, Engineer Circuit Analysis, and Engineering History

SKILLS

Thin film deposition: MBE CVD E-Beam Evaporation Ion Beam Sputtering

Nano-characterization: AFM STM SEM FIB Ellipsometer Profilometer

Optical characterization: Photoluminescence (PL) UV-VIS-IR absorption Raman

Electrical characterization: Electroluminescence (EL) I-V C-V Hall coefficient

Nano-fabrication: Photolithography Reactive-Ion Etching (RIE) Rapid Thermal Annealing Wet Etch

Software: Microsoft Office Excel Origin Python

PUBLICATIONS

Cui, Z. He, Y., Tian, H., Khanaki, A., Xu, L., Shi, W., & Liu, J. (2020). Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal-insulator-metal devices. ACS Applied Electronic Materials, 2, 3, 747-755

Cui, Z. (2019). The Direct Tunneling, Dielectric Breakdown Investigation, and RRAM Application in MBE Hexagonal Boron Nitride Monolayers Using Metal-Insulator-Metal Devices (Thesis, UC Riverside)

Tian, H., He, Y., Das, P., Cui, Z., Shi, W., Khanaki, A., ... & Liu, J. (2019). Growth Dynamics of Millimeter Sized Single Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates. Advanced Materials Interfaces, 6(22), 1901198

He, Y., Tian, H., Khanaki, A., Shi, W., Tran, J., Cui, Z., ... & Liu, J. (2019). Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth. Applied Surface Science, 498, 143851

Tian, H., Khanaki, A., Das, P., Zheng, R., Cui, Z., He, Y., ... & Liu, J. (2018). Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers. Nano letters, 18(6), 3352-3361

Khanaki, A., Tian, H., Xu, Z., Zheng, R., He, Y., Cui, Z., ... & Liu, J. (2017). Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures. Nanotechnology, 29(3), 035602



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