Zhenjun (Crystal) Cui
Address: **** ******** **** **. ********* CA 92507 Cell: 951-***-**** adcz3z@r.postjobfree.com
PROFESSIONAL SUMMARY
* *****’ research experience in Semiconductor Epitaxy, Device Fabrication, Characterization and Facility Maintenance
Leading projects of dielectric breakdown test, failure analysis and non-volatile memory application on 2D hexagonal boron-nitride (h-BN) based Metal-Insulator-Metal (MIM) devices
Experienced in structural, optical and electrical characterizations on semiconductors and devices
EDUCATION
University of California, Riverside
CA, USA
Master of Electrical and Computer Engineering GPA: 3.90/4.0 09.2016-12.2019
Southeast University
Nanjing, China
Bachelor of Materials Science and Engineering GPA: 3.14/4.0 09.2011-03.2016
RESEARCH EXPERIENCE
Quantum Structure Laboratory, UCR and UCR Cleanroom 09.2016 – now
Thin Film Deposition
Molecular Beam Epitaxy (MBE): high Mg incorporated wurtzite ZnO thin film for deep UV photodetector and light emitting diode (LED) implementation
Chemical Vapor Deposition (CVD) Tube furnace: ZnO nanowire with high optical efficiency, gate oxide deposition on SiC and Si wafers
Physical Vapor Deposition (PVD): metal deposition by E-beam Evaporator and Ion Beam Sputtering
Knowledge of electrochemical deposition (ECD) and electroplating process
MIM Device Fabrication based on 2D Hexagonal Boron Nitride (h-BN) Film
Monolayer h-BN (0.33nm) was grown by MBE
MIM devices were fabricated starting from the Photolithography pattern transfer by spinning coating photoresist, soft baking, mask alignment, and developing
Metal (Ni, Co, Au)deposition by Sputtering or E-beam Evaporator
Lift off and Plasma etching was performed to ensure the isolation between devices
Nanoscale Characterization
Optical analysis by Absorption, Raman, PL on ZnO epitaxy film
Electrical test by EL, I-V, Hall coefficient on ZnO film and ZnO based Deep UV LED
Structural characterization by AFM, SEM on h-BN, Ellipsometer, Profilometer, SEM on Ga2O3
PROJECTS
Dielectric Breakdown Study of 2D H-BN
Breakdown I-V, I-T curve trace characterization was done on MIM devices by probe station and electrical analyzer
Statistical analysis including Gauss and Weibull distribution on breakdown voltage was summarized for the h-BN dielectric strength and breakdown mechanism study
Resistive Random Access Memory (RRAM) of 2D H-BN
Non-volatile Bipolar and Unipolar resistive switching characteristics including endurance, on/off ratio, and reliability were characterized by I-V and I-T measurement on MIM devices
Volatile Threshold switching characteristics were tested
The conversions between non-volatile and volatile events were studied
MENTORSHIP
Instructor of junior graduate student: MBE operation and methods of sample characterization
Teaching Assistant of Semiconductor Device Processing, Engineer Circuit Analysis, and Engineering History
SKILLS
Thin film deposition: MBE CVD E-Beam Evaporation Ion Beam Sputtering
Nano-characterization: AFM STM SEM FIB Ellipsometer Profilometer
Optical characterization: Photoluminescence (PL) UV-VIS-IR absorption Raman
Electrical characterization: Electroluminescence (EL) I-V C-V Hall coefficient
Nano-fabrication: Photolithography Reactive-Ion Etching (RIE) Rapid Thermal Annealing Wet Etch
Software: Microsoft Office Excel Origin Python
PUBLICATIONS
Cui, Z. He, Y., Tian, H., Khanaki, A., Xu, L., Shi, W., & Liu, J. (2020). Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal-insulator-metal devices. ACS Applied Electronic Materials, 2, 3, 747-755
Cui, Z. (2019). The Direct Tunneling, Dielectric Breakdown Investigation, and RRAM Application in MBE Hexagonal Boron Nitride Monolayers Using Metal-Insulator-Metal Devices (Thesis, UC Riverside)
Tian, H., He, Y., Das, P., Cui, Z., Shi, W., Khanaki, A., ... & Liu, J. (2019). Growth Dynamics of Millimeter Sized Single Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates. Advanced Materials Interfaces, 6(22), 1901198
He, Y., Tian, H., Khanaki, A., Shi, W., Tran, J., Cui, Z., ... & Liu, J. (2019). Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth. Applied Surface Science, 498, 143851
Tian, H., Khanaki, A., Das, P., Zheng, R., Cui, Z., He, Y., ... & Liu, J. (2018). Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers. Nano letters, 18(6), 3352-3361
Khanaki, A., Tian, H., Xu, Z., Zheng, R., He, Y., Cui, Z., ... & Liu, J. (2017). Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures. Nanotechnology, 29(3), 035602