Design Engineer
Resume:
SRINIVASARAO G
***********.****@*****.***
Address: S/o G Subbarao, H.No.3-4-4,Chimatavaripalem, Munnangi Vari palem(post), Parchur, Prakasm dist, Andhra Pradesh – 523169, India.
CAREER OBJECTIVE:
To work hard with full determination and dedication to achieve organizational as well as personal goals.
EDUCATION:
Present Company:
Currently working as intern in SION SEMICONDUCTORS for design and verification.
Core competency:
• Good knowledge of Digital Design Concepts.
• Good knowledge of Verilog RTL coding.
• Basic knowledge of ASIC flow.
• Good understanding of Object-oriented programming (OOP) concepts.
• Skilled in HVLs such as SystemVerilog.
• Good understanding of MOS fundamentals.
• working on the Mentor Graphics QuestaSim & ModelSim Simulation tools.
• Basic knowledge of C programming.
COURSE UNIVERSITY/BOARD
CGPA/
Percentage
Year
M.Tech (ECE),
Microelectronics &
VLSI Design
National Institute of Technology Silchar,
Assam
8.63/10 2013-15
B.Tech, Electronics
and communication
Engineering
JNTU-kakinada
(Vignan’s Engineering College, Guntur, A.P)
75% 2008-12
Intermediate(IPE)
tate Board, MPC
Vgnana Bhatathi Junior College, Chirala, A.P 97.6% 2006-08 Class 10th Z.P High School, Gannavaram, A.P 85.6% 2006 SRINIVASARAO G
***********.****@*****.***
Address: S/o G Subbarao, H.No.3-4-4,Chimatavaripalem, Munnangi Vari palem(post), Parchur, Prakasm dist, Andhra Pradesh – 523169, India.
M.TECH PROJECT:
Title : “Modelling and Simulation of the Fringing Capacitance Effect on Microwave Characteristics of High Electron Mobility Transistor (HEMT)”. Description: : This project aims to study the DC and microwave Characteristics, & effect of fringing capacitance on high frequency behavior of GaN based HEMT. RESEARCH PUBLICATIONS :
G. Srinivas G. Amarnath, and T. R. Lenka “374 GHz Cut-Off frequency of Ultra thin InAlN/AlN/GaN MIS HEMT” 2015 International Conference on Computer Communication and Informatics (ICCCI -2015), Jan. 08 – 10, 2015, Coimbatore, INDIA
G. Srinivas G. Amarnath, and T. R. Lenka “ Electrical Characteristics and 2DEG Properties of Passivated InAlN/AlN/GaN HEMT” 2015 International Conference on Computer Communication and Informatics (ICCCI -2015), Jan. 08 – 10, 2015, Coimbatore, INDIA
Panda, R. Swain, G. Srinivas Rao, T. R. Lenka “ Realization of Improved Transconductance and Capacitance Characteristics in Al0.3Ga0.7N/AlN/GaN HEMT” IEEE International Conference on Electrical,Electronics,Signals,Communication & optimization – EESCO Vizag, Andhra Pradesh,INDIA
CO-CURRICULAR ACTIVITIES:
Attended a two-day workshop on ‘MEMS & SENSORS’ organized by IEEE-EDS Student Branch Chapter, National Institute of Technology Silchar, Assam, India during 11-12 September, 2013
Attended a two-day workshop on ‘Interdisciplinary Research on Biomedical Engineering’ organized by IEEE-EDS Student Branch Chapter, National Institute of Technology Silchar, Assam, India on 26th August, 2013
Attended 1st One Week National Workshop on High Performance Computing organized by IEEE-EDS Student Branch Chapter, National Institute of Technology Silchar, Assam, India April 4-9, 2014
STRENGHTS:
Sincerity and self-disciplined.
Positive Thinking.
SRINIVASARAO G
***********.****@*****.***
Address: S/o G Subbarao, H.No.3-4-4,Chimatavaripalem, Munnangi Vari palem(post), Parchur, Prakasm dist, Andhra Pradesh – 523169, India.
PERSONAL INFORMATON:
Father’s name : Srinivasarao G
Date of Birth : 06/04/1991
Nationality : Indian
Marital status : Single
Languages known : English and Telugu.
(Srinivasarao G)
Place: Bangalore
Date:
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