WEIPENG LI
** ******* ******, *** **, Ossining, NY, 10562
650-***-**** (cell), *************@*****.***
EDUCATION:
Yale University, New Haven, CT, USA
Ph.D. in Department of Electrical Engineering
March 2007
Thesis title: MIS structures based on GaAs and GaN
Advisor: Professor T.P. Ma
Tianjin University, Tianjin, China
B.S. in Department of Electrical Engineering
July 2001
GRE: 2400 (800/800/800), Full Score
EXPERIENCE:
Lead Financial Strategy Analyst, IBM, Software Defined Storage Global FP&A,
NY April 2012 ~ Now
. Led the development of the brand global 3-year Strategy and annual
Budget, analyzing market research, revenue, gross profit, headcount,
route-to-market, business partner investment, product roadmaps,
business intelligence, risks, capital, and P&L, coordinating
Development, Product, and Sales teams, and prepared the Finance Vice
President and the General Manager for IBM CFO review.
. Proficient in Python programming and Excel, SPSS statistical analytics,
including regression, clustering, correlation, time series and testing
of statistical hypothesis; Proficient in database query (Brio, SQL) on
large amount of data.
. Project manager for the end-to-end world-wide Finance IT System
transformation, with Agile methodology, starting from requirements
gathering, defined and reengineered processes, guided the software
engineers and financial analysts across the world, communicated with
multiple stakeholders, overcame obstacles, and delivered system on
schedule.
. Developed the monthly and quarterly P&L reporting and forecast with
proper reporting and forecasting methodologies.
. Supported Sales Operations team on analysis of revenue trends and key
drivers, productivity, incentives, performance improvement programs,
reorganization, and resource allocation.
. Screened acquisition candidate companies on financial performance, with
DCF valuation.
. Led the Acquisition Integration of a company-Storwize, and reviewed
with the Board of Directors.
. Invented a portfolio ROI prioritization methodology and convinced Vice
Presidents to implement.
. Created the strategic competitive intelligence assessment on EMC and
Netapp.
. Drove the Cloud, Big Data, SaaS transformation and Utility model
adoption on both HW and SW.
Pricing and Investment Specialist, IBM, Power Brand Global FP&A, NY
January 2010 ~ April 2012
. Developed the High Performance Computing (HPC) business case P&L for
investment ROI analysis, including IRR and NPV, annual Budget and 3-
year Strategic Planning.
. Forecasted the monthly and quarterly P&L.
. Guided sales/marketing teams on HPC systems RFP responses, designing
pricing structures, scenarios, and strategies, with competitive
analysis and sensitivity analysis.
. Supported Product Managers on product life-cycle management, including
End of Life management.
. Developed detailed costing analysis on HPC systems.
Lead Device Engineer, IBM, Semiconductor division, NY
April 2007 ~ January 2010
. Led teams of more than 10 engineers, including technology partners,
customers, and vendors, to design state-of-the-art transistors and
circuits, employed structured problem-solving technique, analyzed
immense data to identify trends, and made recommendations to develop
the cutting-edge digital, analog and memory technology at 32nm, 28nm
and 20nm nodes.
. Project manager for advanced Semiconductor reliability qualification
using waterfall methodology with Kanban, managing project schedule,
wafers starts, process splits, and reliability targeting, coordinated
with reliability and partner teams on resources, removed roadblocks,
and successfully delivered products on time in 1 year. Made a critical
decision to manage risk, saving $500,000.
. Proficient in SAS statistical analysis.
. Developed competitor semiconductor process-performance assessment,
including costing analysis, with expertise in semiconductor process
flows, modules and equipment, and with experience in the operation of
semiconductor fabs.
. Published 4 technology papers at premier international conferences,
with 9 US patents granted.
Research Assistant, Yale University, New Haven, CT
September 2001~ March 2007
. Developed a GaAs enhancement mode transistor, which demonstrated, for
the first time in the past 50 years, that inversion can be formed from
un-pinned p-GaAs by ex-situ deposited gate dielectric.
SOFTWARE and SYSTEMS:
. Proficient in Python, SAS, Excel, Essbase, Cognos TM1, SQL, applied
statistical analysis, data structure & algorithm design, and Cloud
architecture design, Knowledge of C, R, Tableau, Hadoop and Mapreduce.
PATENTS:
. US8445969, High pressure Deuterium treatment for semiconductor/High-K
insulator interface.
. US7893502, Threshold voltage improvement employing Fluorine and
adjustment Oxide layer.
. US7867839, Methods to reduce threshold voltage (Vt) in Silicone
Germanium (SiGe), High-K Dielectric-Metal Gate, P-Type Metal Oxide
Semiconductor Field Effect Transistors
. US7883953, Method for transistor fabrication with optimized performance
. US8106462, Balancing NFET and PFET performance using straining layers
. US8237197, Asymmetric Channel MOSFET
. US8298897, Asymmetric Channel MOSFET
. US8563394, Integrated Circuit structure having substantially planar N-P
step and method of forming
. US8623714, Spacer protection and electrical connection for array device
SELECTED PUBLICATIONS:
. W. Li, M. Hamaguchi, et al, "New Layout Dependency in High-K/Metal Gate
MOSFETs", IEEE International Electron Devices Meeting (IEDM) 2011,
24.6. Washinton, DC.
. J. Han, W. Li et al, "Cost Efficient Novel High Performance Analog
Devices Integrated with Advanced HKMG Scheme for 28nm CMOS Technology
and Beyond", 2010 International Conference on Solid State Devices
and Materials, Tokoyo, Japan, C-6-5L, 2010.
. D. -G Park, W. Li et al, "High-k/Metal Gate Low Power Bulk Technology -
Performance Evaluation of Standard CMOS Logic Circuits, Microprocessor
Critical Path Replicas, and SRAM for 45nm and beyond," 2009
International Symposium on VLSI Technology. Systems, and Applications,
VLSI-TSA, pp.90-92.
. W. P. Li, J. F. Zheng, W. Tsai, X. W. Wang, and T.P. Ma. "Demonstration
of enhancement-mode GaAs metal-insulator-semiconductor field effect
transistor with channel inversion using Si3N4 as gate dielectric",
Appl. Phys. Lett. 92, 232904 (2008)
. W.P. Li, Sharon Cui, Yanxiang Liu, S. Shim, T. P. Ma. "Demonstration of
unpinned GaAs surface and surface inversion with gate dielectric made
of Si3N4", Applied Physics Letters, Appl. Phys. Lett. 90, 193503 (2007)
. W. P. Li, T. P. Ma. "Unpinned GaAs Metal-Insulator-Semiconductor with
Low-Temperature Grown Surface", Applied Physics Letters, Appl. Phys.
Lett. 89, 233514 (2006).