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Electrical Engineer Power

Location:
Europe
Posted:
December 03, 2014

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Resume:

AMIR JAVAN KHOSHKHOLGH

Address: **** ******** **** #**

Davis, California 95616

Mobile Phone: +1-530-***-****

E-Mail: ********@*******.***

LinkedIn: www.linkedin.com/in/amirjavan

Overview Electrical engineer proficient in the design and implementation of radio frequency

power amplifiers, concentrating on envelope tracking technique. Skillful in analog

circuits as well as IC design.

To make a substantial contribution as a designer in a R&D / industrial environment by

utilizing and developing upon related academic background, set of skills, experiences

and competencies.

Professional Analog design

o

Skills IC design

o

RF power amplifiers

o

Linear / Switching DC-DC converters

o

Layout extraction

o

PCB design

o

Test and measurements with on-wafer probe station, signal generator, etc.

o

Cadence Cadence Virtuoso (custom IC design)

o

Virtuoso Cadence Orcad (Pspice)

o

(Custom IC MATLAB Programming

o

Design) EAGLE PCB Design

o

Skills Advanced Design System (ADS)

o

Microwave Office (AWR)

o

JAVA Programming

o

Professional University of California, Davis

Experiences 06.2013 – Now

working as Junior Specialist, on the:

o Design and Implementation of Envelope Modulator for LTE applications,

consisting of the Linear stage to cover high frequency components of the envelope

signal and the Switching stage (buck converter) to supply main portion of the

output current, efficiently.

i. At the first step, it was designed and implemented at the discrete

components level at LTE envelope bandwidth of 20 MHz, for GaAs

applications (VDD=6V) and 69% efficiency obtained.

ii. At the second step, the envelope modulator has been designed at the

transistor level (by TSMC 0.13μm design kit with VDD=3.3V) in Cadence

Virtuoso. As it was expected, at the same LTE application frequency, higher

efficiencies than the Analog design acquired.

iii. Finally, it was designed and implemented at the discrete components level

at LTE envelope bandwidth of 20 MHz and 40 MHz, for GaN applications

(VDD=30V) and 65% efficiency was measured. (The implementation achieved

in Politecnico di Torino)

o Design and Implementation of Envelope Tracking Power Amplifiers

i. At the first step, the 6V analog Envelope Modulator was tested with a

commercial PA from Skyworks (SKY65009) at carrier frequency of 1 GHz and

6% efficiency improvement was observed. During the simulations, LTE signal

was created by Agilent’s LTE Signal Studio.

ii. At the second step, the same analog circuit is getting tested with a MMIC

GaAs PA at carrier frequency of 24 GHz. It would be the first K-band envelope

tracking power amplifier (The measurements are getting done in Politecnico di

Torino) Refer to the 2nd publication

iii. Finally, the 30V Envelope Modulator is getting mounted on a Doherty GaN

power amplifier at carrier frequency of 4 GHz (The measurements are getting

done in Politecnico di Torino) Refer to the 3rd publication

Education o Politecnico di Torino 01.2012 - 02.2015 Turin, Italy

Ph.D. in Electronics Engineering

Turin, Italy

o Politecnico di Torino 09.2009 - 09.2011

M.Sc. in Electrical Engineering

Tehran, Iran

o Azad University, CTB 09.2005 - 09.2007

M.A. in Industrial Management

Mashhad, Iran

o Ferdowsi University 09.1996 - 05.2002

B.Sc. in Electrical Engineering

Publications o V. Camarchia, Jie Fang, G. Ghione, A. Javan Khoshkholgh, J. Moreno Rubio,

M. Pirola, R. Quaglia, C. Ramella

Bandwidth extension of GaN Doherty power amplifier: effect on power,

efficiency and linearity (presented at IWS, 2013)

o Javan Khoshkholgh, M. Pirola, R. Quaglia

High efficiency K-band GaAs envelope tracking power amplifier for LTE applications

(Paper under work for EuMW, 2015)

o Javan Khoshkholgh, M. Pirola, R. Quaglia

Envelope Tracking applied to LTE X-band GaN Doherty power amplifier (Paper under

work for EuMW, 2015)

Languages o English Fluent

Native

o Persian

Intermediate

o Italian



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