Engineering Engineer

EXPERIENCE AND TECHNICAL PROFICIENCIES

. Project management experiences on new process and equipment; Assist in

project origination; provide technical validation and conceptual design

of new projects

. Statistical control and process capability analysis

. Strong computer skills on software and system

. 7-years of semiconductor processing experience: MOCVD growth, fabrication

of nano-structures, GaN-based blue LED fabrication, including

photolithography, plasma etching, ion-beam milling, e-beam metal

evaporation, plasma enhanced chemical vapor deposition, rapid thermal

annealing

. Device testing: Electrical and Optical characteristics

. Characterization of semiconductor materials and device structures using:

Photoluminescence (PL), X-ray diffraction (XRD), Scanning electron

microscopy (SEM), Atomic force microscopy (AFM), Transmission electron

microscopy (TEM), Hall measurement

WORK EXPERIENCE

2008- 2/2014: Engineer, self-employed consultant, Lighting Solution LLC

. Consulting on commercializing GaN nanostructure devices.

. Providing consulting support to Fab design and operation.

. Directing manufacturing plans and supply chain management.

. Directing process engineering of LEDs in newly-built Fab oversea.

2007: Postdoc at Center for High Technology Materials, University of New

Mexico.

Responsibilities:

. Provide leadership for graduate students in research group

. Design MOCVD growth of III-Nitride semiconductor structures

. Design process for nanostructure fabrication

. Analyze growth results and test data

2000 - 2007: Research Assistant, at Center for High Technology Materials,

University of New Mexico.

Research Areas:

. Fabrication of Nano-structures (using Interferometic Lithography

and AAO)

. MOCVD growth of III-Nitride semiconductor structures using Veeco

reactor

. Material characterization and device processing & testing

EDUCATION

Ph. D. Degree: May 2007, Dissertation title "Growth, Characterization and

Device Application of GaN Nanowire Grown by MOCVD without Catalyst"

Electrical and Computer Engineering Department, University of New Mexico,

Albuquerque, NM

Master's Degree: May 2003, Electrical and Computer Engineering Department,

University of New Mexico, Albuquerque, NM

Master's Degree: December 1999, Electronics Engineering Department, Hebei

University of Technology, Tianjin, P. R. China

Bachelor's Degree: July 1994, Electronics Engineering Department, Hebei

University of Technology, Tianjin, P. R. China

CO-INVENTOR ON INVENTION DISCLOSURES

1. Patent No.: US 8,188,513 B2 "Nanowire and Larger GaN-Based HEMTs"

(Issued 2012)

2. Patent No.: US 7,521,274,B2 "Pulsed Growth of Catalyst-Free GaN

Nanowires and Application in Group III Nitride Semiconductor Bulk

Material" (Issued 2009)

3. UNM 730 "Catalyst-Free Growth of GaN Nanoscale Needles and Application

in InGaN/GaN Visible LEDs" (2005)

4. UNM 771 "GaN Pyramidal Array for Enhanced LED Performance" (2006)

PUBLICATIONS

1. "Unusually Strong Space-Charge-Limited Current in Thin Wires" A. Alec

Talin, Fran ois L onard, B. S. Swartzentruber, Xin Wang, and Stephen D.

Hersee, Phys. Rev. Lett. 101, 076802 (2008)

2. "Effect of threading defects on InGaN/GaN multiple quantum well light

emitting diodes" M. S. Ferdous, X. Wang, M. N. Fairchild and S. D.

Hersee, Applied Physics Letters 91, 231107 (2007).

3. "Fabrication of GaN Nanowire Arrays by Confined Epitaxy" Xin Wang,

Xinyu Sun, Mike Fairchild Steve Hersee, Applied Physics Letters 89,

233115 (2006).

4. "The Controlled Growth of GaN Nanowires", S. D. Hersee, X. Y. Sun, and

X. Wang, Nano Letters Vol. 6, No. 8, P1808-1811, (2006).

This research has just been highlighted in Nature Nanotechnology.

http://www.nature.com/nnano/reshigh/2006/0806/full/nnano.2006.35.html

5. "Photoelectrochemical Etching Measurement of Defect Density in GaN Grown

by Nanoheteroepitaxy" M. S. Ferdous, X. Y. Sun, X. Wang, M. N. Fairchild,

and S. D. Hersee, Journal of Applied Physics 99, 096105 (2006).

6. "Nanoheteroepitaxial Growth of GaN on Si (111) Nanopillars" S. D.

Hersee, X. Y. Sun, X. Wang, M. Fairchild, J. Liang, J. Xu, Journal of

Applied Physics, 97, 124308 (2005).

US status: US citizen

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