S.ABDULRAHIMAN
Email:****************@*****.***
Mobile: +91-995*******
Permanent Address
Govt Higher Sec School Street,
Minambur (post),
Kavarai(village),
Villupuram-604205,
Tamil Nadu.
CAREER OBJECTIVE
Looking for an opportunity of challenging carrier, in an organization that offers professional growth and ample
opportunity to learn and enrich my competencies in my profession.
EDUCATIONAL QUALIFICATIONS
M.E, (APPLIED ELECTRONICS)
College : SKP Engineering College, Tiruvannamalai
(Affiliated to Anna University Chennai)
CGPA : (2012-2014), 8.62 First class with Distinction.
B.E, (Electronics & communication Engineering) (2008-2012)
College : MAM College Of Engineering, Trichy.
(Affiliated to Anna University Chennai)
CGPA : 7.22 % (Year of Passing out 2012)
Higher Secondary Examination
Institute Raja Desingh Boys Higher secondary school, Gingee.
Percentage 65.83% - (Year of Passing out 2008)
S.S.L.C
Institute Govt Higher Secondary School, Kavarai.
Percentage 79 % - ( Year of Passing out 2006)
AREA OF INTEREST
VLSI Design
Measurement & Instrumentation
Microcontroller,ASIC Design, Computer hardware.
CURRICULAM PROJECT DETAILS
Project Details
B.E, (Under Graduation – Project work details)
Title: NUMERICAL MODELING OF SHORT CHANNEL MISFET PHOTODETECTOR FOR OEIC RECEIVER
Synopsis: A Two dimensional numerical solution of channel potential is obtained for 90nm MOSFET solving poisson
equation in 2D boundary value problem. The drain and transfer characteristics are obtained using potential profile and
field dependent mobility of the carriers in the channel. The effect of illumination on various characteristics are examined
and presented in this paper .The result show that characteristics are strongly influenced by illumination. It is also found
that the device can be used as a photo detector in OEIC receivers.
Organization: In-Home Project, MAM College Of College.
M.E, (Post Graduation – Project work details)
Title: IMPACT OF DOPING CONCENTRATION AND DONOR-LAYER THICKNESS ON THE DC
CHARACTERIZATION OF SYMMETRIC InAl0.7As0.3/InAl0.5As0.5 DG-HEMTs.
Synopsis: To investigate the impact of gate-length and doping concentration of the donor layer and its thickness on the
performance of InAl0.7As0.5/InAl0.5As0.5 DG-HEMT.A comparison of the impact of donor-layer doping concentration,
donor-layer thickness and gate-length on the channel current, transconductance, gate-to source capacitance and cut-off
frequency for the DG-HEMT.It is used in radar communication, RF application, and sensing elements.
Organization: In-Home Project, SKP Engineering College.
NATIONAL & INTERNATIONAL CONFERENCE
Attended National Conference at MAM College of Engineering, Trichy and presented a paper titled “Impact Of
Doping Concentration And Donor-Layer Thickness On The Dc Characterization Of Symmetric
InAl0.7As0.3/InAl0.5As0.5 DG-HEMTs.” at “National conference on Emerging Trends in Information and
Communication Technologies 2014” held on 21 Mar-2014.
Attended National Conference at Karpagam College of Engineering, Coimbatore and presented a paper titled “
Impact Of Doping Concentration And Donor-Layer Thickness On The Dc Characterization Of Symmetric
InAl0.7As0.3/InAl0.5As0.5 DG-HEMTs.” at “International conference on Innovations in Information, Embedded
and Communication system” held on 13 & 14 Mar-2014.
WORKSHOP
Attended One day workshop on the title” Nano Electronics” organized by Danalakshmi Srinivasan College of
Engineering,Chennai.
Participated in ICEVENTS 2013 INTERNATIONAL CONFERENCE in SKP engineering college
ACHEIVMENTS
Won the “ACADEMIC EXCELLENCE AWARD” in 2013 academic year.
HIGHEST GRADE in subject “COMPUTER HARDWARE & INTERFACING” Held During Nov/Dec -2011
Examination.
HIGHEST GRADE in subject “COMPUTER ARCHITECUTURE” Held During April/May -2011
Examination
HIGHEST GRADE in subject “MICROWAVE ENGINEERING” Held During Nov/Dec -2011 Examination
ADDITIONAL QUALIFICATIONS
Operating Sofwares-Tcad, Matlab, Xilinx, Microsoft office.
Programming Languages- Basic C & C++.
LANGUAGES KNOWN
English,Hindi,Tamil,Urudu
DECLARATION
I hereby declare that the information furnished above is true to the best of my knowledge and conscience
Place:GINGEE
Date S.ABDULRAHIMAN