Data Device
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MCRF355
13.56 MHz Passive RFID Device with Anti-Collision Feature
Features Package Type
PDIP/SOIC
Carrier frequency: 13.56 MHz
Data modulation frequency: 70 kHz VPRG VDD
1 8
Manchester coding protocol
NC
CLK
154 bits of user memory 2 7
On-board 100 ms SLEEP timer Ant. B
Ant. A 3 6
Built-in anti-collision algorithm for reading up to
VSS
NC 4 5
multiple tags in the same RF field
Cloaking feature to minimize the detuning
Note: Pins 1, 2, 5 and 8 are for device testing
effects of adjacent tags
and contact programming.
Read only device in RF field
Pins 3, 5 and 6 are for external antenna
Long read range
connection.
Rewritable with contact programmer
NC = Not connected
Factory-programmed options
Very low-power CMOS design
Die, wafer, wafer-on-frame, PDIP or SOIC
package options
MCRF355 may be ordered blank or factory-
programmed with a unique serial number, header and
Applications
checksum. Microchip s format is further defined in
Book store and library book ID TB031.
Airline baggage tracking
Toys and games
Access control/asset tracking
Applications for reading multiple tags and long
read range
RF Carrier
Ant. A
MCRF355
Reader
Ant. B
Modulated Vss
RF Data
Read range: ~ up to 1.5 meters depending on tag size
and system design.
2005 Microchip Technology Inc. DS21287G-page 1
MCRF355
Description The data stream consists of 154 bits of Manchester-
encoded data at a 70 kHz rate. The Manchester code
The MCRF355 is Microchip s uniquely designed read- waveform is shown in Figure 2-2. After completion of
only passive Radio Frequency Identification (RFID) the data transmission, the device goes into SLEEP
device with an advanced anti-collision feature. It is mode for about 100 ms. The device repeats the trans-
programmable with a contact programmer or factory mitting and SLEEP cycles as long as it is energized.
programming only. The device is powered remotely by During the SLEEP time, the device remains in an
rectifying RF magnetic fields that are transmitted from uncloaked state.
the reader.
SLEEP time is determined by a built-in, low-current
The device has a total of six pads (see Figure 1-1). timer. There is a wide variation of the SLEEP time
Three (ant. A, ant. B, VSS) are used to connect the between each device. This wide variation of SLEEP
external resonant circuit elements. The additional three time results in a randomness of the time slot. Each
pads (VPRG, CLK, VDD) are used for programming and device wakes up and transmits its data in a different
testing of the device. time slot with respect to each other. Based on this
scenario, the reader is able to read many tags that are
The device needs an external resonant circuit between
in the same RF field.
antenna A, B, and VSS pads. The resonant frequency
of the circuit is determined by the circuit elements The device has a total of 154 bits of reprogrammable
between the antenna A and VSS pads. The resonant memory. All bits are reprogrammable by a contact
circuit must be tuned to the carrier frequency of the programmer. A contact programmer (part number
reader for maximum performance. The circuit element PG103003) is available from Microchip Technology Inc.
between the antenna B and VSS pads is used for data Factory programming prior to shipment, known as
modulation. See Application Note AN707 for further Serialized Quick Turn ProgrammingSM (SQTPSM), is
operational details. Examples of the resonant circuit also available. The device is available in die, wafer,
configuration for the MCRF355 are shown in wafer-on-frame, PDIP and SOIC packages.
Section 3.0.
When a tag (device with the external LC resonant
Note: Information provided herein is subject to
circuit) is brought to the reader s RF field, it induces an
change without notice.
RF voltage across the LC resonant circuit. The device
rectifies the RF voltage and develops a DC voltage.
The device becomes functional as soon as VDD
reaches the operating voltage level.
The device includes a modulation transistor that is
located between antenna B and VSS pads. The transis-
tor has high turn-off (a few M ) and low turn-on (3 )
resistance. The turn-on resistance is called modulation
resistance (RM). When the transistor turns off, the res-
onant circuit is tuned to the carrier frequency of the
reader. This condition is called uncloaking. When the
modulation transistor turns on, its low turn-on resis-
tance shorts the external circuit element between
antenna B and VSS. As a result, the resonant circuit no
longer resonates at the carrier frequency. This is called
cloaking.
The induced voltage amplitude (on the resonant circuit)
changes with the modulation data: higher amplitude
during uncloaking (tuned), and lower amplitude during
cloaking (detuned). This is called amplitude modula-
tion signal. The receiver channel in the reader detects
this amplitude modulation signal and reconstructs the
modulation data.
The occurrence of the cloaking and uncloaking of the
device is controlled by the modulation signal that turns
the modulation transistor on and off, resulting in com-
munication from the device to the reader.
2005 Microchip Technology Inc.
DS21287G-page 2
MCRF355
1.0 ELECTRICAL CHARACTERISTICS
TABLE 1-1: ABSOLUTE RATINGS
Parameters Symbol Min Max Units Conditions
Coil Current IPP_AC 40 mA Peak-to-Peak coil current
Assembly temperature TASM 265 C
Storage temperature TSTORE -65 150 C
TABLE 1-2: DC CHARACTERISTICS
TAMB = -20oC to 70oC
All parameters apply Commercial (C):
across the specified
operating ranges, unless
otherwise noted.
Parameters Symbol Min Typ Max Units Conditions
Reading voltage VDDR 2.4 V VDD voltage for reading
Hysteresis voltage VHYST TBD TBD
A
Operating current IDDR 7 10 VDD = 2.4V during reading at
25 C
Testing voltage VDDT 4 V
Programming voltage:
High level input voltage VIH 0.7 * VDDT V External DC voltage for
Low level input voltage VIL 0.3 * VDDT V programming and testing
High voltage VHH 20 V
Current leakage during IDD_OFF 10 nA (Note 1)
SLEEP time
Modulation resistance RM 3 4 DC resistance between Drain and
Source gates of the modulation
transistor (when it is turned on)
k
Pull-Down resistor RPDW 5 8 CLK and VPRG internal pull-down
resistor
Note 1: This parameter is not tested in production.
2005 Microchip Technology Inc. DS21287G-page 3
MCRF355
TABLE 1-3: AC CHARACTERISTICS
All parameters apply across Commercial (C): TAMB = -20oC to 70oC
the specified operating
ranges, unless otherwise
noted.
Parameters Symbol Min Typ Max Units Conditions
Carrier frequency FC 13.56 MHz Reader s transmitting frequency
Modulation frequency FM 58 70 82 kHz Manchester coding, at VDD = 2.6 VDC
- 5 VDC
Coil voltage during reading VPP_AC 4 VPP Peak-to-Peak AC voltage across the
coil during reading
Coil clamp voltage VCLMP_AC 32 VPP Peak-to-Peak coil clamp voltage
Test mode clock frequency FCLK 115 500 kHz 25 C
SLEEP time TOFF 50 100 200 ms Off time for anti-collision feature, at
25 C and VDD = 2.5 VDC
Write/Erase pulse width TWC 2 10 ms Time to program bit, at 25 C
s
Clock high time THIGH 4.4 25 C for testing and programming
s
Clock low time TLOW 4.4 25 C for testing and programming
STOP condition pulse width TPW:STO 1000 ns 25 C for testing and programming
STOP condition setup time TSU:STO 200 ns 25 C for testing and programming
Setup time for high voltage TSU:HH 800 ns 25 C for testing and programming
High voltage delay time TDL:HH 800 ns Delay time before the next clock, at
25 C for testing and programming
Data input setup time TSU:DAT 450 ns 25 C for testing and programming
s
Data input hold time THD:DAT 1.2 25 C for testing and programming
Output valid from clock TAA 200 ns 25 C for testing and programming
Data retention 200 Years For T L2
(a)
Ant. A
RF Carrier 1
f 0 =
-
C1
C1C2
2 L
C 1 + C 2
L
Interrogator MCRF355
Ant. B
C2
Modulated
RF Data VSS
C1 C2
(b)
2005 Microchip Technology Inc. DS21287G-page 9
MCRF355
4.0 DEVICE PROGRAMMING 3. The above mode function (3.2.2) will be
executed when the last bit of code is entered.
MCRF355 is a reprogrammable device in Contact 4. Power the device off (VDD = VSS) to exit
mode. The device has 154 bits of reprogrammable Programming mode.
memory. It can be programmed in the following proce-
5. An alternative method to exit the Programming
dure. (A programmer, part number PG103003, is avail-
mode is to bring CLK logic High before VPRG to
able from Microchip). Developer kits, DV103003 and
VHH (high voltage).
DV103006, also include contact programmers.
6. Any Programming mode can be entered after
exiting the current function.
4.1 Programming Logic
4.4 Programming Mode
Programming logic is enabled by applying power to the
device and clocking the device via the CLK pad while
1. Erase EE Code: 011*******
loading the mode code via the VPRG pad (See
Examples 4-1 through 4-4 for test definitions). Both the 2. Program EE Code: 011*******
CLK and the VPRG pads have internal pull-down
3. Read EE Code: 011*******
resistors.
Note: 0 means logic Low (VIL) and 1
means logic High (VIH).
4.2 Pin Configuration
Connect antenna A, antenna B and VSS pads to 4.5 Signal Timing
ground.
Examples 4-1 through 4-4 show the timing sequence
4.3 Pin Timing for programming and reading of the device.
1. Apply VDDT voltage to VDD. Leave VSS, CLK and
VPRG at ground.
2. Load mode code into the VPRG pad. The VPRG
is sampled at CLK low-to-high edge.
EXAMPLE 4-1: PROGRAMMING MODE 1: ERASE EE
12
CLK Number: 1 2 3 4 5 6 7 8 9 10 11
CLK
VHH
VIH TWC
VPRG:
VIL
Note: Erases entire array to a 1 state between CLK 11 and 12.
EXAMPLE 4-2: PROGRAMMING MODE 2: PROGRAM EE
CLK Number: 1 2 5 6 7 8 9 10 11 165
CLK:
Pulse high to program bit to 0
VHH
Leave low to leave bit at 1
VIH
TWC TWC
VIL
VPRG:
Program bit #0 Program bit #153
Note: Pulsing VPRG to VHH for the bit programming time while holding the CLK low programs the bit to a 0 .
2005 Microchip Technology Inc.
DS21287G-page 10
MCRF355
EXAMPLE 4-3: PROGRAMMING MODE 3: READ EE
CLK Number: 1 2 5 6 7 8 9-10-11-12-165
CLK:
VIH
VPRG: VIL
...
bit #0 bit #1 bit #153
data data data
Turn off programmer drive during
CLK high so MCRF355 can drive
VPRG.
EXAMPLE 4-4: TIMING DATA
THIGH TLOW
CLK:
TPW:STO
THD:DAT
VHH
VIH
VPRG:
VIL
TAA
TSU:STO
TSU:DAT TWC
VHH
TDL:HH
TSU:HH
VPRG: VIH
(Reading)
VIL
2005 Microchip Technology Inc. DS21287G-page 11
MCRF355
5.0 FAILED DIE IDENTIFICATION 7.0 NOTICE ON DIE AND WAFER
HANDLING
Every die on the wafer is electrically tested according
to the data sheet specifications and visually inspected The device is very susceptible to Electro-Static
to detect any mechanical damage, such as mechanical Discharge (ESD), which can cause critical damage to
cracks and scratches. the device. Special attention is needed during the han-
dling process.
Any failed die in the test or visual inspection is identified
by black colored ink. Therefore, any die covered with Any ultraviolet (UV) light can erase the memory cell
black ink should not be used. contents of an unpackaged device. Fluorescent lights
and sunlight can also erase the memory cell, although
The ink dot specification:
it takes more time than UV lamps. Therefore, keep any
Ink dot size: 254 m in circular diameter
unpackaged device out of UV light and also avoid direct
Position: central third of die exposure of strong fluorescent lights and shining
Color: black sunlight.
Wafer map files are also available upon request Certain IC manufacturing, COB and tag assembly
operations may use UV light. Operations such as back-
6.0 WAFER DELIVERY grind de-tape, certain cleaning procedures, epoxy or
glue cure should be done without exposing the die
DOCUMENTATION
surface to UV light.
The wafer is shipped with the following information: Using X-ray for die inspection will not harm the die, nor
Microchip Technology Inc. MP Code erase memory cell contents.
Lot Number
8.0 REFERENCES
Total number of wafers in the container
Total number of good dice in the container
It is recommended that the reader reference the
Average die per wafer (DPW) following documents.
Scribe number of wafers with number of good
1. Antenna Circuit Design for RFID Applications,
dice
AN710, DS00710.
Wafer map files are also available upon request
2. RFID Tag and COB Development Guide with
Microchip s RFID Devices, AN830, DS00830.
3. MCRF355/360 Application Note: Mode of
Operation and External Resonance Circuit,
AN707, DS00707.
4. Microchip Development Kit Sample Format for
the MCRF355/360 Devices, TB031, DS91031.
5. MCRF355/360 Reader Reference Design,
DS21311.
2005 Microchip Technology Inc.
DS21287G-page 12
MCRF355
PACKAGING INFORMATION
8.1 Package Marking Information
8-Lead PDIP (300 mil) Example:
MCRF355
XXXXXXXX
XXXXXNNN
XXXXXNNN
0525
YYWW
8-Lead SOIC (150 mil) Example:
XXXXXXXX MCRF355
XXXXYYWW XXX0525
NNN NNN
Legend: XX...X Customer specific information*
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week 01 )
NNN Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
* Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
2005 Microchip Technology Inc. DS21287G-page 13
MCRF355
8-Lead Plastic Dual In-line (P) 300 mil (PDIP)
E1
D
2
n 1
E
A2
A
L
c
A1
B1
p
eB B
UNITS INCHES* MILLIMETERS
DIMENSION LIMITS NOM MAX MIN NOM MAX
MIN
n
Number of Pins 8 8
p
Pitch .100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Length D .360 .373 .385 9.14 9.46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
c
Lead Thickness .008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing eB .310 .370 .430 7.87 9.40 10.92
15
Mold Draft Angle Top 10
15
5 5
10
15
Mold Draft Angle Bottom 10
15
5 5
10
* Controlling Parameter
Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010 (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
2005 Microchip Technology Inc.
DS21287G-page 14
MCRF355
8-Lead Plastic Small Outline (SN) Narrow, 150 mil (SOIC)
E
E1
p
D
2
B n 1
h
45
c
A2
A
L A1
UNITS INCHES* MILLIMETERS
DIMENSION LIMITS MIN NOM MAX MIN NOM MAX
n 8 8
Number of Pins
p 1.27
Pitch .050
1.75
.069 1.35 1.55
Overall Height A .053 .061
1.55
.061 1.32 1.42
Molded Package Thickness A2 .052 .056
.25
.010 .10 .18
Standoff .004 .007
A1
6.20
.244 5.79 6.02
Overall Width E .228 .237
3.99
.157 3.71 3.91
Molded Package Width E1 .146 .154
5.00
.197 4.80 4.90
Overall Length D .189 .193
.51
.020 .25 .38
Chamfer Distance h .010 .015
.76
.030 .48 .62
Foot Length L .019 .025
8
4 0 4
Foot Angle 0 8
c .25
.010 .20 .23
Lead Thickness .008 .009
.51
.020 .33 .42
Lead Width B .013 .017
15
12 0 12
Mold Draft Angle Top 0 15
15
12 0 12
Mold Draft Angle Bottom 0 15
* Controll
ection feature may be a violation of the Digital Millennium Copyright Act. If such acts
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