C Engineering
Resume:
LEONARD C. FELDMAN
BUSINESS ADDRESS: Rutgers, The State University of New Jersey
Institute for Advanced Materials, Devices and Nanotechnology
Busch Campus, 607 Taylor Road, Room CCR 206
Piscataway, NJ 08854
Tel: 848-***-****; FAX: 732-***-****
E-mail: abqjll@r.postjobfree.com
EDUCATION: B.A. (Physics) - Drew University - 1961
M.S. (Physics) - Rutgers, The State University - 1963
Ph.D. (Physics) - Rutgers, The State University - 1967
EMPLOYMENT:
Rutgers, The State University of New Jersey, 2007-
- Vice President, Physical Science and Engineering Partnerships, 2007-
- Director, Institute for Advanced Materials, Devices and Nanotechnology, 2007 -
- Professor of Physics and Astronomy, 2007-
- Professor of Materials Science and Engineering, 2007-
Vanderbilt University, 1996-2011
- Stevenson Professor of Physics, Department of Physics and Astronomy, 1996-2011
- Professor of Materials Science and Engineering, Electrical Engineering Department, 2003 -
2011
- Co-Director, Interdisciplinary Graduate Program in Materials Science, 2000 -2005
- Director, Vanderbilt Institute of Nanoscale Science and Engineering, 2001 -2007
Director, N.S.F. Integrative Graduate Education and Research Traineeship (IGERT), 2003
-
Oak Ridge National Laboratory, Solid State Division/Condensed Matter Division
- Distinguished Visiting Scientist, 1996-
Fisk University, 2004-
- Adjunct Professor, 2004-
AT&T Bell Laboratories, 1967 - 1996
- Department Head: Silicon Materials Research Department, 1990 - 1996
Silicon Electronics Research Laboratory (R. E. Howard, Director)
- Department Head: Thin Film Semiconductor Research Department, 1987 -1990
Materials Processing Laboratory (A.Y. Cho, Director)
- Department Head: Materials Interfaces and Ceramics Research Department, 1984-1987
Materials Science Laboratory (G.Y. Chin, Director)
- Supervisor: Materials Interface Characterization Group, 1983-1984
Physical Metallurgy and Ceramics Research Department (G. Y. Chin, Dept. Head)
- Member of Technical Staff: 1967-1983
Radiation Physics Department (W. L. Brown, Dept. Head)
RESEARCH INTERESTS:
Electronic Materials, Surface and Interface Science, Condensed Matter Physics
Thin Films, Epitaxy, Materials Science, Nanostructures,
Materials Modification and Analysis Using Ion Beams
Organization and administration of academic research
Science education
Resume - Leonard C. Feldman (Cont.)
HONORS & AWARDS:
Senior Member IEEE (2012)
Elizabeth Laird Memorial Lecture, University of Western Ontario (2011)
Miegunyah Distinguished Fellow, Melbourne, Australia (2009)
Distinction in the Physical Sciences Alumni Award, Rutgers Graduate School (2008)
Fellow of American Association for the Advancement of Science (AAAS) (2004)
Lindhard Lecturer, Int l. Conf. Atomic Collisions in Solids (2003)
David Adler Lectureship Award, Amer. Phys. Soc. (1999)
Distinguished Visiting Scientist - Oak Ridge National Lab. (1996)
Who s Who in America (2002)
Chairperson, Gordon Conference on Defects in Semiconductors (1996)
Drew University Alumni Achievement Award in Science (1996 )
Royal Danish Academy of Sciences and Letters (elected, 1994)
Fellow of American Vacuum Society (1990)
Ontario Center for Materials Research - Distinguished Lecturer (1991)
Distinguished Merit Award - Materials Science and Engineering - University of Illinois (1989)
Distinguished Member of Technical Staff - AT&T Bell Labs (1982)
Listed: 1000 Most Cited Physicists (1981-1997) (Out of 500,000)
Fellow of American Physical Society (1978)
Chairperson, Gordon Conference on Particle - Solid Interactions (1978)
Robert Mehrabian Distinguished Lecturer in Materials - University of California Santa Barbara
SCIENTIFIC JOURNALS:
Advisory Board, J. of Engineering Science and Technology Review (2011- )
Series Editor-in-Chief, "Energy and Materials," World Scientific / Imperial College Press (2011- ).
Series Editor in Chief, Properties of Semiconductors, World Scientific Publishing (2008 - )
Distinguished Advisory Board, J. of Materials Science (2004- )
Associate Editor, International J. of Nanoscience (2001- 2005)
Associate Editor, J. of Vacuum Sci. & Tech. A (1996-1999)
Editor-in-Chief, Applied Surface Science, North Holland (1985-1996)
Principal Editor, J. of Materials Research (1989-1994)
Editorial Board, Surface Science Reports, Elsevier (1986-2006)
Editorial Advisory Board, Radiation Effects and Defects in Solids, Gordon and Breach (1982- )
UNIVERSITY ACTIVITIES:
International Council Member, Kavala Institute of Technology, Kavala, Greece
NSF Int l Materials Institute for Solar Energy and Environment(IMI-SEE.)Advisory Board (2010)
New Jersey s Science & Technology, Physics Department Advisory Board (2007 -
Fisk University, Adjunct Professor, Research Co -advisor (2004- )
University of Western Ontario, Physics Visiting Review Com. (2003)
University of North Texas, Physics Dept. Visiting Review Com. (2003)
Univ. of Western Ontario, Phys. Rev. Visiting Panel (2002)
Univ. of Wisconsin, MRSEC Advisory Board (2001 -2005)
Columbia University, MRSEC Advisory Board (1999 -2005)
Colorado School of Mines Advisory Com. Materials Science Dept. (1990- )
Cornell University Adjunct Prof. (MS&E) Initiated a course on Thin Films and Epitaxy,
1988, 1990
Cornell University Visiting Professor (Initiated a course with J. W. Mayer on Physics of
Modern Materials Analysis ) (1982)
State Univ. of New York, Albany (Physics Dept.), Associate Faculty
Univ. of Guelph, Canada (Physics) Associate Graduate Faculty (1978 -1984)
University of Western Ontario, Physics, Associate Graduate Faculty (1978 -1996)
Drew University Research Advisor Field Work Program for Seniors
Instructor In-Hours Continuing Education Program Bell Labs
(Involving the teaching of graduate level physics course to research scientists)
Instructor American Vacuum Society, Materials Res. Soc. Short Course Program
2
Resume - Leonard C. Feldman (Cont.)
Supervised research for 10 Ph.D. theses and 11 post -doctoral appointments
Ph.D. THESES SUPERVISED:
Oluseyi Stephen Babalola, Surface and Bulk Defects in Cadmium Zinc Telluride and
Cadmium Manganese Telluride Crystals Vanderbilt University (2009)
E. Donev, Metal Semiconductor Transitions in Nanoscale Vanadium Dioxide Thin Films,
Subwavelength Holes, and Nanoparticles, Vandervilt University (2008)
Manoj Sridhar, Novel Mosfet-Based Fluidic Sensors and Simulations of Thermal Bubble
Nucleation in Nanochannels, (2008) (Co-supervised with A. Hmelo and D. Li)
S. Dixit, Radiation Induced Charge Trapping Studies of Advanced Si and SiC based MOS
Devices, Vanderbilt University (2008)
J. Rozen, Electronic Properties and Reliability of the SiO2/SiC Interface, Vanderbilt
University (2008)
S. Dhar, Nitrogen and Hydrogen Induced Trap Passivation at the SiO 2/4H-SiC
Interface, Vanderbilt University (2005).
R. Ruiz, Morphology and Growth of Pentacene Thin Films on SiO2, Vanderbilt Univ. (with
R. Haglund, 2003)
R. Lopez, Metal Semiconductor Phase Transitions in VO 2 Nanocrystals, Vanderbilt Univ.
[with R. Haglund] (2002)
M.A. Morales-Paliza, Indium Tin Oxide Films Deposited by Pulsed Laser Ablation at Room
Temperature, Vanderbilt University, Nashville (2001)
J.A. Bennett, Physics of Ion Implanted SiC, Vanderbilt University, Nashville (2001)
K. McDonald, Nitrogen Incorporation and Interface Trap Reduction in SiO 2/4H-SiC,
Vanderbilt Univ. [with R.A. Weller] Nashville (2001)
H. T. Tang, Compositional Analysis of Gate Dielectric Films, Univ. of Western Ontario,
London, Canada (1995)
Bonnie E. Weir, Fabrication and Analysis of Boron Ordered Delta -Doping Layer in Silicon,
Stevens Inst. of Tech. (1993)
Han-Sheng Jin, The Application of Channeling in Surface and Interface Studies, S.U.N.Y.
(Albany) (1985)
H.-J. Gossmann, Investigation of Semiconductor Surfaces by High Energy Ion Channeling,
S.U.N.Y. (Albany) (1984)
R. Haight, Ion Scattering Studies of Si Surfaces and Interfaces: Structure and
Neutralization, S.U.N.Y. (Albany) (1983)
N. Cheung, Channeling Studies of Silicon Interfaces, Cal. Inst. of Tech. (1980)
T.E. Jackman, Selected Topics in Ion-Solid Interactions, University of Guelph (1979)
PROFESSIONAL ACTIVITIES:
Government
Oak Ridge National Lab LDRD Selection Com. (2004-2005)
Sandia Materials Science Review Bd. (2003)
Army Research Office, Physics Coordinating Grp. (1997, 2000)
International Review Panel, Grad. School in Microelectronics, Danish Res. Acad. (1998)
Danish National Research Foundation, Research Center Evaluation Panel (1997)
Chairperson, Scientific Council, Danish Microelectronics Ctr. (1991 -1997)
Scientific Advisory Council, Institute for Semiconductor Ph ysics, Frankfurt, Ger. (1996-2003)
Livermore National Lab, Physics Div. Advisory Panel (1996 -1999)
Consultant - Oak Ridge National Lab, Solid State Div. (1996- )
Sandia National Labs, Physical & Chemical Sciences External Peer Review Bd. (1996)
Naval Res. Lab - Radiation Div. Review Panel (1992)
Nat l. Sci. Found. - MRL Selection Panel (1991)
Consultant - Livermore Nat l Lab. (1989-2000)
D.O.E. Advisory Panel: Heteroepitaxy (1989)
Nat l Sci. Found. Sci. and Tech. Ctr. Selection Panel (1988)
Univ. of Chicago Review Committee for Argonne Nat l. Lab. (Physics Div.) (1983 -1986)
Chairperson, SEMATECH Com. on Critical Materials for Elec. Tech.
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Resume - Leonard C. Feldman (Cont.)
Societies
General Committee of the Physical Electronics Conference (PEC)
Program Committee for the 2012 Gordon Research Conference in Semiconductors
A.P.S Budget Committee (2008-2009)
A.P.S Executive Board (Elected 2007-2009)
A.P.S. Exec. Council (elected 2006-2009 )
AAAS Fellow Electorate Nominating Committee Member (2006-2009)
A.P.S. Committee on Committees (2007-2008)
A.P.S. Chair Committee on Committees (2009- )
Amer. Phys Soc. Councilor (elected 2004 -2008)
A.P.S. Comm. Davisson-Germer Prize (2004-2006)
A.P.S Task Force on Counter-Terrorism (2002-2003)
Chair, Div. of Materials Physics, A.P.S. (1999-2001, elected 1999)
A.P.S. Comm. On Careers and Professional Development (2001 -2003)
Ed. Bd. Physics Today / Book Selection (1998 -2001)
Am.Vac. Soc., Appl. Surf. Sci. Div., Exec. Comm. (1998-2001)
Am. Instit. of Phys., Com. on Book P ub. (1991-1997)
Am. Vac. Soc., Electronic Materials Div., Exec. Com. (1988-1991, 1996-1998)
Am. Phys. Soc., Sec.-Treas., Div. of Condensed Matter Physics (1993 -1995)
Matls. Res. Soc.-Long Range Planning Com. (1989-1992)
Trustee, American Vacuum Society (1986-1988)
Member of Am. Vac. Soc., Mat. Res. Soc., Am. Cer. Soc., I.E.E.E., Am. Phys. Soc.
Chairman, Surf. Sci. Div., Am. Vac. Soc. (1985 -1987); A. V. S. Exec. Com. (1981-1987)
Councilor, Materials Research Society (1984 -1986)
Chairman, Materials Research Society Education Committee (1983)
Materials Research Society Program Committee (1980, 1981 -1986)
International Conference Committees
First International Meeting on Recent Developments in the Study of Radiation Effects in Matter,
Int. Org. Com. (2006-)
"Surface Engineering with Ceramics" of CIMTEC 2006.
1st International Symposium on Transparent Conducting Oxides, Int. Advisory Com. (2006 -)
"Surface Engineering with Ceramics" of CIMTEC 2006.
27th Int l. Conf. Physics of Semiconductors Program Com. (2003-2004)
Int. Workshop on Nanostructures for Electronics and Optics (2001 - )
Ion Beam Modification of Materials (2000 - )
Shanghai Conf. on Advanced Silicon Materials (1999)
NATO Advanced Research Workshop on Si/SiO2, St. Petersburg (1996)
Int. Conf. on Formation of Semiconductor Interfaces (1993 -1996)
Physics and Chem. of Semi. Interfaces-Organizing Com. (1991-1995)
Int. Conf. on Solid Films and Surfaces (1987 -1994)
Int. Conf. on the Structure of Surfaces (1983-1989)
Ion Beam Analysis Conf. (1978-2000)
Atomic Collisions in Solids Conference (1977 -1985)
International Conference on Nano and Microelectronics (Jan. 2008)
AT&T Bell Laboratories
Patent Initiatives (1993-1996)
Patent Selection Com. (1993-1996)
Central Diagnostics Bd. (1991-1996)
Radiation Protection Com. (1991-1996)
Recruiter, Mat. Sci. and Eng. Dept., Cornell University (1987 -1996)
Advisory Council on Research, AT&T Bell Labs (1983)
Mentor Bell Labs Co-Op. Research Program (For minority science students)
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Resume - Leonard C. Feldman (Cont.)
Vanderbilt University
Search Com. for the H. Fort Flowers Chair in Mech. Eng. (2004 -2005)
Search Com-Condensed Matter Theory (2004-2005)
Vanderbilt Fisk Com. (2003-2005)
Dean s Ad-hoc Committee (2002-2003)
Chair, Physics Dept. Search for Condensed Matter Physicist (2002 -2003)
Director, Vanderbilt Institute for Nanoscale Science and Engineering (2001 -)
Interdisciplinary Materials Science Program, Co-Director (1999-2004)
Free Electron Laser, Director, Search Com. (1999-2000)
Biophysics Search Selection Comm. (1998-2000)
University Research Council (1997-2000)
Matls. Sci. and Eng. Prog. Com. (1997 -1999)
Rutgers, The State University of New Jersey
Graduate Faculty - Full Membership (2011 - )
Governing Board, Center for Innovative Ventures for Emerging Technologies (2007 - )
Dean of Engineering Search Committee (2008 - )
Intellectual Property/Patent Overview Committee (2008 - )
President s Administrative Council (2007 - )
PUBLICATIONS L. C. FELDMAN
BOOKS
Materials Analysis by Ion Channeling, L.C. Feldman, J.W. Mayer and S.T. Picraux, Academic
1.
Press, N.Y. (1982).
Fundamentals of Surface and Thin Film Analysis, L.C. Feldman and J.W. Mayer, North
2.
Holland-Elsevier, N.Y. (1986); translated into Japanese, Kaibundo Publishing (1988); translated
into Russian, MIR Publishing (1989).
Electronic Materials Thin Film Science, K. Tu, J.W. Mayer and L.C. Feldman, Macmillan Publ.
3.
N.Y. (1992).
Fundamentals of Nanoscale Film Analysis, T.L. Alford, L.C. Feldman, and J.W. Mayer,
4.
Springer (2007); translated into Japanese, (2008).
Handbook of Instrumentation and Techniques for Semiconductor Nanostructure
5.
Characterization, R. Haight, F.M. Ross & J.B. Hannon, Forward by L.C. Feldman, World
Scientific / Imperial College Press (2011).
CHAPTERS IN EDITED VOLUMES/REVIEW ARTICLES
Ion Induced X-Rays as Applied to Solids, J.A. Cairns and L.C. Feldman, Chapter in New Uses
1.
of Low Energy Accelerators, ed. J.F. Ziegler, Plenum Press, New York (1975).
Selected Low Energy Nuclear Reaction Data, by L.C. Feldman and S.T. Picraux, in
2.
Handbook for Ion Beam Analysis, ed. by J.W. Mayer and E. Rimini, Academic Press, New
York (1977).
MeV Ion Scattering for Surface Structure Determination, L.C. Feldman, chapter in Surface
3.
Science: Recent Progress and Perspectives, ed. by R.S. Vanselow and W. England, C.R.C.
Press, Cleveland Press, Cleveland, Ohio (1981).
High Energy Ion Scattering, L.C. Feldman, in Appl. Atomic Collision Physics, ed. by S. Datz,
4.
Academic Press (1983).
Rutherford Backscattering and Channeling Analysis of Interfaces and Epitaxial Structures,
5.
L.C. Feldman and J.M. Poate, Ann. Rev. of Mat. Sci. 12 (1982).
The Auger Effect, L.C. Feldman, Article in McGraw -Hill Encyclopedia of Science and
6.
Technology.
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Ion Scattering from Surfaces and Interfaces, L.C. Feldman, in Ion Beams for Materials
7.
Analysis, ed. by J.R. Bird and J.S. Williams, Academic Press, New York (1988).
Rutherford Backscattering and Nuclear Reaction Analysis, in Ion Spectroscopies for Surface
8.
Analysis, ed. by A.W. Czanderna and D.H. Hercules, Plenum Press, New York (1991).
Clustering on Surfaces, Martin Zinke-Allmang, L.C. Feldman and Marcia H. Grabow, Surface
9.
Science Reports 16, No. 8 1992.
Ordered
10.
E.F. Schubert, Cambridge University Press, Cambridge, MA (1996).
High Energy Ion Scattering, L.C. Feldman in Surface Science The First Thirty Years, ed.
11.
by C.B. Duke, North-Holland, Amsterdam (1994).
Introduction: The Si/SiO2 System, L.C. Feldman, in Fundamental Aspects of Silicon
12.
Oxidation, Y. Chabal, Ed., Springer, Berlin (2000).
13. Silicon Dioxide-Silicon Carbide Interfaces: Current Status and Recent Advances, (Chapter
20), Sarit Dhar, Sokrates T. Pantelides, John R. Williams and Leonard Feldman, Taylor and
Francis (2008)
PROCEEDINGS EDITOR
Thin Film Processing and Characterization of High Temperature Superconductors, ed. by J.W.
1.
Harper, R.J. Colton and L.C. Feldman, Amer. Inst. of Physics. Conf. Proc. No. 165, New York
(1988).
PATENTS
1. Method and Apparatus for Surface Characterization and Process Control Utilizing Radiation from
Desorbed Particles, L.C. Feldman, J.S. Kraus, N.H. Tolk, M. Traum and J.C. Tully, U.S. Patent No.
4,393,311 (1983).
2. High Resistivity Group III-V Compounds by Helium Bombardment, L.C. Feldman, M.W.Focht,
A.T. Macrander and B. Schwartz, Statutory Invention Registration, No. H147 (Nov. 1986).
3. Method for Epitaxially Growing Gex Si1-x Layers on Si, J.C. Bean, L.C. Feldman, A.T. Fiory, U.S.
Patent No. 4,529,455.
4. Semiconductor Device Including Alternating Ordered Layers, J. Bevk, L.C. Feldman, A.M. Glass
and T.P. Pearsall (1986).
5. Device Including a Semiconductor/Dielectric Interface and Method of Device Manufacture, J. Bevk,
L.C. Feldman and A. Ourmazd, U.S. /19.03.07 Patent No. 27708.
6. Semiconductor Heterostructures Having GexSi1-x Layers on Si Utilizing Molecular Beam Epitaxy,
J.C. Bean, L.C. Feldman and A.T. Fiory, U.S. Patent No. 4,861,393 (1989).
7. Vertical Cavity Surface Emitting Lasers with Semitransparent Metallic Mirrors and High Quantum
Efficiencies, D.G. Deppe, L.C. Feldman, R.F. Kopf, E.F. Schubert, L.W. Tu and G. Zydik, U.S.
Patent No. 5,068,868 (1991).
8. Fabrication of Electronic Devices, L.C. Feldman, G. Higashi, C. Mak, B. Miller, European Pt. Nr.
92308696.1, U.S. Patent No. 5,308,796.
9. Erbium Doped Optical Devices, L.C. Feldman, M.J. Hunt, D.C. Jacobson, E.F. Schubert, A.
Vredenberg, R. Wong and G. Zydik, U.S. Patent No. 5,249,195.
10. Method to Fabricate Conductive Lines in Diamond, L.C. Feldman, R. Kalish, A. Katz and N.
Moriya, U.S. Patent No. 5334306 (1994).
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11. Method for Making a Semiconductor Device, Including Diffusion Control, J. Bevk, L.C. Feldman,
H.J.-Gossmann, H. Luftman and R.H. Yan, U.S. Patent No. 5,500,391 (March 1996).
12. Reverse Side Etching for Producing Layers with Strain Variation, L.C. Feldman and N. Moriya,
U.S. Patent No. 5,532,510 (July 2, 1996).
13. Inclusion of Nitrogen at the Silicon Dioxide - Silicon Carbide Interface for Passivation of Interface
Defects, G.Y. Chung, M. Di Ventra, L.C. Feldman, J.K. McDonald, S.T. Pantelides, C.C. Tin, R.A.
Weller, J.R. Williams, U.S. Patent No. 6,939,756 (2005)
14. Inclusion of Nitrogen at the Silicon Dioxide -Silicon Carbide Interface for Passivation of Interface
Defects, G.Y. Chung, M. Di Ventra, L.C. Feldman, J.K. McDonald, S.T. Pantelides, C.C. Tin, R.A.
Weller, and J.R. Williams, U.S. Patent No.7,235,438 (2007)
15. A System for Growing Small Populations of Living Cells and Monitoring Their Physiological State,
J.P. Wikswo, F.J. Baudenbacher, T.A. Bapty, L.C. Feldman, D. Granner, G. Karsai, O. McGuiness,
D. Osterman, D. Piston and A. Prokop (filed October 1, 2000).
16. Devices with Small Scale Channels and the Fabrication Thereof by Etching, J.M. Ramsey, L. C.
Feldman, T.E. Haynes, and D.M. Zehner (US Application No. 10/903,310, refiled Dec. 2004).
17. Method for Exfoliation of Silicon Carbide, J.A. Bennett, O.W. Holland, M. Budde, D.K. Thomas
and L.C. Feldman (Provisional Application filed May 25, 2000).
18. Nanostructured Material Transport Devices and Their Fabrication by Application of Molecular
Coatings to Nanoscale Channels (Disclosure #0931, U.T.-Batelle, July 2003).
19. Apparatus and Methods for Instrumenting and Controlling a Single Cell as a Programmable
Microsystem, and High Content Toxicology Screening Using a Massively Parallel, Multi -Phasic
Cellular Biological Activity Detector, J.P. Wikswo, F.J. Baudenbacher, T.A. B apty, R. R. Balcarcel,
L.C. Feldman, D. Granner, G. Karsai, O. McGuiness, D. Osterman, D. Piston, A. Prokop, D. Cliffel
and J. Gilligan, Prov. App. filed Aug. 6, 2001, U.S. Serial No. 60/310,652.
20. Apparatus and Methods for Detecting Motor Vehicle Drivers Using Cellular Phones, T. Holman,
L.C. Feldman, R. Schrimpf (Prov. Application filed July 10, 2001).
21. A Subwavelength Hole Array Controllable by a Semiconductor -Metal Phase Transition and Optical
Transmission Through the Same, E.J. Donev, L.C. Feldman, R. F. Haglund Jr., R. Lopez, and J.Y.
Suh, Pending Oct 31, 2005, U.S. Serial No. 60/731,695.
22. Inclusion of Nitrogen at the Silicon Dioxide -Silicon Carbide Interface for Passivation of Interface
Defects, G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. De Ventra, R. A. Weller, S. T.
Pantelides and L. C. Feldman, U.S. Patent No. 7,727,340 (2010).
SCIENTIFIC ARTICLES
1. A Diffusion Model of Escape from Channels, L.C. Feldman, B.R. Appleton and W.L. Brown,
Proceedings of the International Conference on Solid State Physics Research with Accelerators,
Ed. A.N. Goland, Brookhaven National Laboratory (1967).
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2. Experimental Investigations of Feeding-Into and Escape-from Channels, B.R. Appleton, L.C.
Feldman and W.L. Brown, Proceedings of the International C onference on Solid State Physics
Research with Accelerators, Ed. A.N. Goland, Brookhaven National Laboratory (1967).
3. Interpretation of Emergent Star Pattern Distributions for MeV Protons Transmitted through Single
Crystals, L.C. Feldman and B.R. Appleton, Rad. Eff. 2, 65 (1969).
4. Photoluminescence of Oxygen in ZnTe Introduced by Ion Implantation, J.L. Merz and L.C.
Feldman, Appl. Phys. Lett. 15, 129 (1969).
5. Uni-Directional Channeling and Blocking: A New Technique for Defect Studies, L.C. Feldman
and B.R. Appleton, Appl. Phys. Lett. 15, 305 (1969).
6. Comparison of Average Potential Models and Binary-Collision Models of Axial Channeling and
Blocking, J.U. Anderson and L.C. Feldman, Phys. Rev. B1, 2063 (1970).
7. Determination of Channeling Probability from Transmitted -Particle Energy Spectra, M.R. Altman,
L.C. Feldman and W.M. Gibson, Phys. Rev. Lett. 24, 464 (1970).
Uni-Directional Channeling and Blocking, B.R. Appleton and L.C. Feldman, Atomic Collision
8.
Phenomena in Solids, Amsterdam, North Holland (1970).
9. Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single
Crystals, L.C. Feldman and J.W. Rodgers, J. of Appl. Phys. 41, 3776 (1970).
10. Ion Implantation of Bismuth into GaP. I. Photoluminescence, J.L. Merz, L.C. Feldman and E.A.
Sadowski, Rad. Eff. 6, 286 (1970).
11. Implantation of Bi into GaP. II. Channeling Studies, L.C. Feldman, W.M. Augustyniak and J.L.
Merz, Rad. Eff. 6, 293 (1970).
12. Lattice Location Studies of Tl, Pb and Bi in Iron and the Hyperfine Field at Pb in Iron, L.C.
Feldman, and E.N. Kaufmann, Phys. Rev. Lett. 27, 1145 (1971).
13. Implantation of Bi into GaP. III. Hot-Implant Behavior, J.L. Merz, D.W. Mingay, W. M.
Augustyniak and L.C. Feldman, Proc. of the II. Intern. Conf. on Ion Implantation in
Semiconductors, Ed. I. Ruge and J. Graul, Springer -Verlag, New York (1971).
14. Channeling in Iron and Lattice Location of Implanted Xenon, L.C. Feldman and D.E. Murnick,
Phys. Rev. B5, 1 (1972).
15. Investigation of Interstitial Zn Concentrations in Additively Colored ZnO Using the Uni -
Directional Channeling and Blocking Technique, B.R. Appleton and L.C. Feldman, J. Phys.
Chem. Solids 33, 507 (1972).
16. Use of the Channeling T echnique to Locate Interstitial Impurities, J.U. Andersen, L.C. Feldman
and E. Laegsaard, Rad. Eff. 12, 219 (1972).
17. Another Measurement of the Polarization of Deuterons Channeled Through Thin Ni Foils, L.C.
Feldman, D.W. Mingay and J.P.F. Sellschop, Rad. Eff. 13, 145 (1972).
18. Impact Parameter Dependence of K-Shell Ionization by Protons, E. Laegsaard, J.U. Andersen and
L.C. Feldman, Phys. Rev. Lett. 29, 1206 (1972).
19. Multiple Scattering and Planar Dechanneling in Silicon and Germanium, L.C. Feldman and B.R.
Appleton, Phys. Rev. B8, 935 (1973).
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Resume - Leonard C. Feldman (Cont.)
Charge States of 25-150 keV H and 4He Backscattered from Solid Surfaces, T.M. Buck, G.H.
20.
Wheatly and L.C. Feldman, Surf. Sci. 35, 345 (1973).
21. The Lattice SiteLocation of C Implanted into Fe, L.C. Feldman, E.N. Kaufma nn, J.M. Poate and
W.M. Augustyniak, Proceeding of the Third International Conference on Ion Implantation in
Semiconductors and Other Materials, Ed. Billy L. Crowder, Plenum Press, New York (1973).
22. Dechanneling of 5 MeV Protons from Planar Channels in Silicon and its Temperature
Dependence, M.R. Altman, L.C. Feldman and W.M. Gibson, Rad. Eff. 18, 171 (1973).
23. Investigation of the Non-Characteristic X-Radiation Band Observed in ArBombardment of
Various Targets, G. Bissinger and L.C. Feldman, Phys. Rev. A8, 1624 (1973).
24. Impact Parameter Dependence of K-Shell Ionization, E. Laegsaard, J.U. Anderson and L.C.
Feldman, in Inner Shell Ionization Phenomena and Future Applications, U.S.A.E.C. Technical
Information Center, Oak Ridge, Tennessee, p. 1019 (1973).
25. The Combined Use of He Back-scattering and He Induced X-Rays in the Study of Anodically
Grown Oxide Films on GaAs, L.C. Feldman, J.M. Poate, F. Ermanis and B. Schwartz, Thin Solid
Films 19, 81 (1973).
26. Cross Section for L-Shell Ionization in Au by Collision of Protons and Helium Ions, S. Datz, J.L.
Duggan, L.C. Feldman, E. Laegsaard and J.U. Andersen, Phys. Rev. 9, 192 (1974).
27. Lattice Location of Impurities Implanted into Metals, H. de Waard and L .C. Feldman, in
Applications of Ion Beams to Metals, ed. by S.T. Picraux, E.P. EerNisse and F.L. Vook, Plenum
Press, New York p. 317 (1974).
28. Combined Lattice Location and Hyperfine Field Study of Yb Implanted into Fe, R.B. Alexander,
E.J. Ansaldo, B.I. Deutch, J. Gellert and L.C. Feldman, in Applications of Ion Beams to Metals,
ed. by S.T. Picraux, E.P. EerNisse and F.L. Vook, Plenum Press, New York p. 365 (1974).
29. End-Point Energy Variations in the Non-Characteristic Radiation Produced by S, Cl, Ar, K, Ca
and Ti Bombardment of Si, G. Bissinger and L.C. Feldman, Phys. Rev. Lett. 33, 1 (1974).
Charge Neutralization of Medium Energy H and 4He Backscattered from Solid Surfaces Effects of
30.
Surface Cleaning, T.M. Buck, L.C. Feldman and G.H. Wheatley, in Atomic Collisions in Solids, S.
Datz, B.R. Appleton and C.D. Moak (Eds.), Plenum Press, New York 331 (1975).
31. Lifetime Studies of Ar-2p Vacancies Traveling through Solids, L.C. Feldman, P.J. Silverman and
R.J. Fortner, Nucl. Inst. and Meth. 132, 29 (1976).
Experimental Probes of Microscopic Interactions Controlling Diffusion in Cation Substituted -
32.
Alumina, S.J. Allen, L.C. Feldman, D.B. McWhan, J.P. Remeika and R.E. Walstedt, Superionic
Conductors, ed. by G.D. Mahan and W.L. Roth, p. 279, Plenum Press, New York (1976).
33. Depth Profiling with Ion Induced X-Rays, L.C. Feldman and P.J. Silverman, in Ion Beam Surface
Layer Analysis, Vol. 2, ed. by O. Meyer, G. Linker and F. Kappeler, Plenum Press, New York p.
735 (1976).
34. Measurement of X-Rays Emitted from Projectiles Moving in Solid Targets, R.J. Fortner, D.L.
Matthews, L.C. Feldman, J.C. Garcia and H. Oona, in Beam Foil Spectroscopy, Vol. 2, ed. by I.A.
Sellin and D.J. Pegg, Plenum Press, New York p. 559 (1976).
9
Resume - Leonard C. Feldman (Cont.)
35. The Lattice Location and Hyperfine Field of Implanted Yb in Fe as a Function of Annealing
Temperature, R.B. Alexander, E.J. Ansaldo, B.I. Deutch, J. Gellert and L.C. Feldman, Hyperfine
Interactions 3, 45 (1977).
36. Positron-Annihilation Momentum Profiles in Aluminum: Core Contribution and the Independent
Particle Model, K.G. Lynn, J.R. MacDonald, R.A. Boie, L.C. Feldman, J.D. Gabbe, M.F. Robbins,
E. Bonderup and J. Golovchenko, Phys. Rev. Lett. 38, 241 (1977).
37. Implantation of Co into Aluminum: Damage and Lattice Location Studies, R. Kalish and L.C.
Feldman, Ion Implantation in Semiconductors, 1976, ed. by F. Chernow, J.A. Borders and D.
Brice, Plenum Publishing Corp. 239 (1977).
38. Analysis of Plasma Grown GaAs Oxide Films, R.L. Kaufmann, L.C. Feldman, J.M . Poate and
R.P.H. Chang, Appl. Phys. Lett. 30, 319 (1977).
Surface Scattering from W Single Crystals by MeV He + Ions, L.C. Feldman, R.L. Kaufmann, P.J.
39.
Silverman, R.A. Zuhr and J.H. Barrett, Phys. Rev. Lett. 39, 38 (1977).
Surface Scattering of MeV He+ Ions from W(100) and Si(100) Single Crystals, L.C. Feldman,
40.
R.L. Kauffman, P.J. Silverman, I. Stensgaard and R.A. Zuhr, Proc. of the 7th International Conf.
on Atomic Collisions in Solids, Moscow (1977).
41. Search for Cluster Effects in X-Ray Production by Fast Hydrogen Molecules, A. Lurio, H.H.
Anderson and L.C. Feldman, Phys. Rev. 17A, 90 (1978).
42. Use of Ion Beam Techniques to Characterize Thin Plasma Grown GaAs and GaAlAs Oxide Films,
R.L. Kaufmann, L.C. Feldman and R.P.H. Chang, Nucl. Inst. and Meth. 149, 619 (1978).
43. The Rotating Sample Technique for Measurement of Random Backscattering Yields from Crystals
and its Application to -Alumina, P. Blood, L.C. Feldman, G.L. Miller and J.P. Remeika, Nucl.
Inst. and Meth. 149, 225 (1978).
44. Significance of Channeling Surface Peak in Thin Film Analysis, R.L. Kaufmann, L.C. Feldman,
P.J. Silverman and R.A. Zuhr, Appl. Phys. Lett. 32, 93 (1978).
45. Surface Studies of W(100) by MeV He Scattering, R.A. Zuhr, L.C. Feldman, R.L. Kauffman and
P.J. Silverman, Nucl. Inst. and Meth. 149, 349 (1978).
46. Lattice Location of Impurities Derived from Hyperfine Interaction and Channeling, H. de Waard,
S.R. Reintsema and L.C. Feldman, Hyperfine Interactions 4, ed. by R.S. Raghaven and D.E.
Murnick, North Holland Publishing Co. 720 (1978).
47. Physical and Electrical Properties of Plasma-Grown Oxide on Ga0.64Al0.36As, R.P.H. Chang, C.C.
Chang, J.J. Coleman, R.L. Kaufmann, W.R. Wagner and L.C. Feldman, J. of Appl. Phys. 48, 5384
(1977).
48. Studies of the Si-SiO2 Interface by MeV Ion Scattering, L.C. Feldman, I. Stensgaard, P.J.
Silverman and T.E. Jackman, The Physics of SiO2 and Its Interfaces, ed. by S.T. Pantelides,
Pergammon Press, New York p. 344 (1978).
49. Calculation of the Backscattering-Channeling Surface Peak, I. Stensgaard, P.J. Silverman and L.C.
Feldman, Surf. Sci. 77, 513 (1978).
10
Resume - Leonard C. Feldman (Cont.)
50. Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2 Interface, L.C.
Feldman, P.J. Silverman, J. Williams, T. Jackman and I. Stensgaard, Phys. Rev. Le tt. 41, 1396
(1978).
51. Thermally Assisted Flash Annealing of Silicon and Germanium, R.L. Cohen, J.S. Williams, L.C.
Feldman and K.W. West, Appl. Phys. Lett. 33, 751 (1978).
52. Reconstruction of the W(001) Surface and Its Reordering by Hydrogen Adsorption Stud ied by
MeV Ion Scattering, I. Stensgaard, L.C. Feldman and P.J. Silverman, Phys. Rev. Lett. 42, 247
(1979).
53. Liquid and Solid Phase Regrowth of Si by Laser Irradiation and Thermally Assisted Flash
Annealing, J.M. Poate, J.C. Bean, W.L. Brown, R.L. Cohen, L.C. Feldman, H.J. Leamy, J.W.
Rodgers, D. Rousseau, G.A. Rozgonyi, J.A. Shelnutt, T.T. Sheng, K.W. West, J.S. Williams and
G.K. Celler, Proc.of the Int. Conf. on Beam Modification of Materials, Budapest, Rad. Eff. 46,
167 (1980).
54. Application of Selective Chemical Reaction Concept for Controlling the Properties of Oxides on
GaAs, R.P.H. Chang, J.J. Coleman, A.U. Polak, L.C. Feldman and C.C. Chang, Appl. Phys. Lett.
34, 237 (1979).
55. MeV Ion Scattering Studies of the Reconstruction of the W(100) Surface and I ts Reordering by
Hydrogen Adsorption, I. Stensgaard, L.C. Feldman and P.J. Silverman, J. Vac. Soc. and Tech. 16,
492 (1979).
56. MeV Ion Scattering from Thin Si Single Crystals: A Novel Approach to Interface Studies, L.C.
Feldman, P.J. Silverman, I. Stensgaard and N. Cheung, J. Vac. Sci. and Tech. 16, 1457 (1979).
57. Structural Studies of the Reconstructed W(100) Surface with MeV Ion Scattering, L.C. Feldman,
P.J. Silverman and I. Stensgaard, Surf. Sci. 87, 710 (1979).
58. Studies of the Si-SiO2 Interface by MeV Ion Channeling, N.W. Cheung, L.C. Feldman, P.J.
Silverman and I. Stensgaard, Appl. Phys. Lett. 35, 859 (1979).
59. Epitaxial Silicide Formation and Interfacial Order in Epitaxial NiSi 2, K.C.R. Chiu, J.M. Poate,
L.C. Feldman and C.J. Doherty, J. of the Elec. Chem. Soc. 126, C344 (1979).
60. Determination of Substitutional Dopant and Hole Concentrations in Zn Diffused InP Crystals, R.S.
Williams, P.A. Barnes and L.C. Feldman, Appl. Phys. Let t. 36, 760 (1980).
61. Hydrogen Ratios and Profiles in Deposited Amorphous and Polycrystalline Films and In Metals,
Using Nuclear Techniques, R.E. Benenson, L.C. Feldman and B.G. Bagley, Nucl. Inst. and Meth.
168, 547 (1980).
62. Si(001) Surface Studies Using Hi gh Energy Ion Scattering, L.C. Feldman, P.J. Silverman and I.
Stensgaard, Nucl. Inst. and Meth. 168, 589 (1980).
63. Interfacial Order in Epitaxial NiSi2, K.C.R. Chiu, J.M. Poate, L.C. Feldman and C.J. Doherty,
Appl. Phys. Lett. 36, 544 (1980).
64. Ni on Si (111): Reactivity and Interface Structure, N.W. Cheung, R.J. Culbertson, L.C. Feldman,
P.J. Silverman, K.W. West and J.W. Mayer, Phys. Rev. Lett. 45, 120 (1980).
65. (100) and (110) Si-SiO2 Interface Studies by MeV Ion Backscattering, T.E. Jackman, J.R.
MacDonald, L.C. Feldman, P.J. Silverman and I. Stensgaard, Surf. Sci. 100, 35 (1980).
11
Resume - Leonard C. Feldman (Cont.)
66. Atomic Displacements in the Si(111) 7x7 Surface, R.J. Culbertson, L.C. Feldman and P.J.
Silverman, Phys. Rev. 45, 2043 (1980).
67. Evidence of Multilayer Distortions in the Reconstr ucted Si(001) Surface, I. Stensgaard, L.C.
Feldman and P.J. Silverman, Surf. Sci. 102, 1 (1981).
68. Si(111): Ni Surface Studies by AES, UPS, LEED and Ion Scattering, Y.J. Chabal, R.J. Culbertson,
L.C. Feldman and J.E. Rowe, J. Vac. Sci. and Tech. 18, 880 (1981).
69. Channeling at the Crystal-Crystal Interface: Al on GaAs (001), R.S. Williams, L.C. Feldman and
A.Y. Cho, Rad. Eff. 54, 217 (1981).
70. Optical Radiation from Electron-Stimulated Desorption of Excited Particles, N.H. Tolk, L.C.
Feldman, J.S. Kraus, R.J. Morris, M.M. Traum and J.C. Tully, Phys. Rev. Lett. 46, 134 (1981).
71. MeV Ion Scattering Studies of (111) Si/SiO2 Interface, R. Haight, W.M. Gibson, T. Narusawa and
L.C. Feldman, J. Vac. Sci. and Tech. 18, 973 (1981).
72. Atomic Positions of Surface Atoms Using High Energy Ion Scattering, L.C. Feldman, Nucl. Inst.
and Meth. 191, 211 (1981).
73. Properties of Aluminum Epitaxial Growth on GaAs, P.M. Petroff, L.C. Feldman, A.Y. Cho and
R.S. Williams, J. of Appl. Phys. 52, 7317 (1981).
74. Epitaxy of Au on Ag (111) Studied by High Energy Ion Scattering, R.J. Culbertson, L.C.
Feldman, P.J. Silverman and H. Boehm, Phys. Rev. Lett. 47, 657 (1981).
75. Silicide Formation at Fe-Si Interfaces Studied by M ssbauer Spectroscopy and Rutherford
Backscattering, R.L. Cohen, L.C. Feldman, K.W. West and P.J. Silverman, in Nuclear and
Electron Resonance Spectroscopies Applied to Materials Science, ed. by E. Kaufmann and G.
Shenoy, Elsevier-North Holland, 357 (1981).
76. New Approaches to Surface Structure Determinations, P. Eisenberger and L.C. Feldman, Science
214, 300 (1981).
77. A New Precision Velocity Measurement Technique for Accelerator Beams, G.M. Temmer, M.
Hass, Y. Niv, L.C. Feldman, J.S. Kraus and N.H. Tolk, IEEE Trans. on Nucl. Sci. NS -28, 1540
(1981).
78. Role of Surface Interactions in Beam-Foil Excited-State Formation, N.H. Tolk, L.C. Feldman, J.S.
Kraus, J.C. Tully, M. Hass, Y. Niv and G.M. Temmer, Phys. Rev. Lett. 47, 487 (1981).
79. Comparison of High Energy Ion Beam and Electron Beam Surface Probes, L.C. Feldman, Appl. of
Surf. Sci. 13, 211 (1982).
80. The Creation of Excited Hydrogenic States Near Surfaces, N.H. Tol k, J.C. Tully, L.C. Feldman,
J.S. Kraus, Y. Niv, G.M. Temmer and M. Hass, Phys. Rev. Lett. 46, 134 (1981).
81. Hydrogen Adsorption on Si(111) - 7x7, R.J. Culbertson, L.C. Feldman, P.J. Silverman and R.
Haight, J. Vac. Sci. and Tech. 20, 868 (1982).
82. Atomic Structure at the (111) Si/SiO2 Interface, R. Haight and L.C. Feldman, J. of Appl. Phys. 53,
4884 (1982).
12
Resume - Leonard C. Feldman (Cont.)
83. Displacement Around a Dissolved Impurity Atom in a Metal: Sn in Cu, R.L. Cohen, L.C.
Feldman, K.W. West and B.M. Kincaid, Phys. Rev. Lett. 49, 1416 (1982).
84. A Quantitative Study of the Relationship Between Interfacial Carbon and Line Dislocation on
Density in Silicon Molecular Beam Epitaxy, J.H. McFee, R.G. Swartz, V.D. Archer, S.N. Finegan
and L.C. Feldman, J. Electro. Chem. Soc. 130, 214 (1983).
85. Application of Channeling to Surface Science, L.C. Feldman, Physica Scripta 28, 303 (1983).
How Well Does 4He Backscattering From Low-Z Nuclei Obey the Rutherford Formula?, J.R.
86.
MacDonald, J.A. Davies, T.E. Jackman and L.C. Feldman, J. of Appl. Phys. 54, 1800 (1983).
87. Surface Structural Damage Produced in P(100) by RF Plasma or Sputter Deposition, W.C.
Dautremont-Smith and L.C. Feldman, Thin Solid Films 105, 187 (1983).
88. Epitaxial Growth of Au on Pd(111), Y. Kuk, L.C. Feldman and P.J. Silverman, J. Vac. Sc i. and
Tech. A1, 1060 (1983).
89. Epitaxial Growth of BaF2 on Semiconductor Substrates, J.M. Phillips, L.C. Feldman, J.M. Gibson
and M.L. McDonald, Thin Solid Films 104, 101 (1983).
90. Transition from the Pseudomorphic State to the Nonregistered State in Epitaxial Growth of Au on
Pd (111), Y. Kuk, L.C. Feldman and P.J. Silverman, Phys. Rev. Lett. 50, 511 (1983).
91. Stacking Fault Model for the Si(111)-7x7 Surface, P.A. Bennett, L.C. Feldman, Y. Kuk, E.G.
McRae and J.E. Rowe, Phys. Rev. B28, 3656 (1983).
92. Epitaxial Growth of Alkaline Earth Fluorides on Semiconductors, J.M. Phillips, L.C. Feldman,
J.M. Gibson and M.L. McDonald, Thin Solid Films 107, 217 (1983).
93. Rutherford Scattering/Channeling Analysis of Semiconductor Interfaces, L.C. Feldman, Thin
Solid Films 104, 3 (1983).
94. Epitaxial Growth of BaF2 on Ge and InP (Summary Abstract), J.M. Phillips, L.C. Feldman, J.M.
Gibson and M.L. McDonald, J. Vac. Sci. and Tech. A1, 563 (1983).
Auger Electron Emission Induced by MeV H+ Ions, J.R. MacDonald, L.C. Feldman, P.J.
95.
Silverman, J.A. Davies, K. Griffiths, T.E. Jackman, P.R. Norton and W.N. Unertl, Nucl. Inst. and
Meth. 218, 765 (1983).
96. Rutherford Backscattering/Channeling and Transmission Electron Microscopy Analysis of
Epitaxial BaF2 Films on Ge and InP, J.M. Phillips, L.C. Feldman, J.M. Gibson and M.L.
McDonald, J. Vac. Sci. and Tech. B246 (1983).
97. Application of High Energy Ion Channeling to GaAs(110): (Summary Abstract), H.-J. Gossman,
W.M. Gibson, T. Itoh and L.C. Feldman, J. Vac. Sci. and Tech. A1059 (1983).
98. Rutherford Scattering-Channeling Analysis of Semiconductor Structures, L.C. Feldman, S.P.I.E.
452, 192 (1984).
99. Neutralization of Energetic He Ions Scattered from Clean and Cs-covered Si (100), R. Haight,
L.C. Feldman, T.M. Buck and W.M. Gibson, Phys. Rev. B30, 734 (1984).
100. Observation of a (5x5) LEED Pattern from Ge x Si1-x (111) Alloys, H.-J. Gossmann, J.C. Bean,
L.C. Feldman and W.M. Gibson, Surf. Sci. Lett. 138, L175 (1984).
13
Resume - Leonard C. Feldman (Cont.)
101. Atomic Displacements in the Au(110)-(1x2) Surface, Y. Kuk, L.C. Feldman and I.K. Robinson,
Surf. Sci. Lett. 138, L168 (1984).
102. Oscillatory Relaxation of the Ag(110) Surface, Y. Kuk and L.C. Feldman, Phys. Rev. B 30, 5811
(1984).
103. Commensurate and Incommensurate Structures in Molecular Beam Epitaxially Grown GexSil-x
Films on Si(100), A.T. Fiory, J.C. Bean, L.C. Feldman and I.K. Robinson, J. of Appl. Phys. 56,
1227 (1984).
104. Pseudomorphic Growth of GeXSil-x on Silicon by Molecular Beam Epitaxy, J.C. Bean, T.T.
Sheng, L.C. Feldman, A.T. Fiory and R.T. Lynch, Appl. Phys. Lett. 44, 102 (1984).
105. Domain Structure of the Clean Reconstructed Au(110) Surface, I.K. Robinson, Y. Kuk and L.C.
Feldman, Phys. Rev. B29, 4762 (1984).
106. GeXSil-x /Si Strained-Layer Superlattice by Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman,
A.T. Fiory, S. Nakahara and I.K. Robinson, J. Vac. Sci. and Tech. A2, 436 (1984).
107. Structural Properties of Single Crystal Rare Earth Thin Films Y and Gd Grown by Molecular
Beam Epitaxy, J.R. Kuo, D.B. McWhan, M. Hong, E.M. Gyorgy, L.C. Feldman and J.E.
Cunningham, Proc. of Mat. Res. Soc. Symp. (1984).
108. Tetragonal Strain in MBE GeXSil-x Films Grown on (100) Si Observed by Ion Channeling and X -
ray Diffraction, A.T. Fiory, L.C. Feldman, J.C. Bean and I.K. Robinson, Thin Films and Interfaces
II, No. Holland, 497 (1984).
109. Reordering of Reconstructed Si Surfaces Upon Ge Deposition at Room Temperature, H. -J.
Gossman, L.C. Feldman and W.M. Gibson, Phys. Rev. Lett. 53, 294 (1984).
110. Structural Analogy Between GeSi(111)-5x5 and Si(111)-7x7 Surfaces, E.G. McRae, H.-J.
Gossmann and L.C. Feldman, Surf. Sci. 146, L540 (1984).
111. Ion Scattering Analysis of Interfaces, L.C. Feldman, Ultramicroscopy 14, 51 (1984).
112. Ge Deposition on Si(111)-7x7 and Si(100)-2x1: Effects on Si Surface Structure, H.-J. Gossmann,
L.C. Feldman and W.M. Gibson, J. Vac. Sci. and Tech. B2, 407 (1984).
113. High-Resistivity in InP by Helium Bombardment, M.W. Foc ht, A.T. Macrander, B. Schwartz and
L.C. Feldman, J. of Appl. Phys. 55, 3859 (1984).
114. Neutralization of Energetic He Ions Scattered from Clean 2 x 1 Si (100), R. Haight, L.C. Feldman,
T.M. Buck and W.M. Gibson, Nucl. Inst. and Meth. 230, 501 (1984).
115. Structural Damage Produced in InP(100) Surfaces by Plasma-Employing Deposition Techniques,
W.C. Dautremont-Smith and L.C. Feldman, J. Vac. Sci. and Tech. A3, 873 (1985).
116. Observation and Properties of the Ge(111)-7x7 Surface from Si(111)/Ge Structures: Summary
Abstract, H.-J. Gossmann, J.C. Bean, L.C. Feldman E.G. McRae and I.K. Robinson, J. Vac. Sci.
and Tech. A3, 1633 (1985).
117. Initial Stages of Silicon Molecular Beam Epitaxy: Effects of Surface Reconstruction, H. -J.
Gossmann and L.C. Feldman, Phys. Rev. B32, 6 (1985).
14
Resume - Leonard C. Feldman (Cont.)
118. The Influence of Reconstruction on Epitaxial Growth: Ge on Si(100)-(2x1) and Si(111)-7x7, H.-J.
Gossmann, L.C. Feldman and W.M. Gibson, Surf. Sci. 155, 413 (1985).
119. The Effect of Channeling on MeV Ion-Induced Auger Electron Production in Silicon, J.R.
MacDonald, L.C. Feldman, P.J. Silverman, J.A. Davies and T.E. Jackman, Surf. Sci. 157, L335
(1995).
120. 7x7 Reconstruction of Ge(111) Surfaces Under Compressive Strain, H. -J. Gossmann, J.C. Bean,
L.C. Feldman, E.G. McRae and I.K. Robinson, Phys. Rev. Lett. 55, 1106 (1985), Proc. of Mat.
Res. Soc. Symp. 41, 188 (1985).
121. Growth of Thin Pb Layers on Cu(001), R.J. Culbertson, Y. Kuk and L.C. Feldman, Proc. of Mat.
Res. Soc. Symp. 41, 188 (1985).
122. The Influence of Surface Reconstruction on the Initial Stages of Silicon Molecular Beam Epitaxy,
H.-J. Gossmann and L.C. Feldman, J. Vac. Sci. and Tech. B3, 1065 (1985).
123. Molecular Beam Epitaxy and Reconstructed Surfaces, H. -J. Gossmann and L.C. Feldman, Appl.
Phys. A38, 171 (1985).
Structural Analysis of Ultra-Thin Epitaxial Films, L.C. Feldman, Proc. of I ntl. Conf. on
124.
Metallurgical Coatings (1985), J. Vac. Sci. and Tech. 3, 2594 (1985).
125. Subsurface Strain in the Ge (100) and Ge (111) Surfaces and Comparison to Silicon, R.J.
Culbertson, Y. Kuk and L.C. Feldman, Surf. Sci. 167, 127 (1986).
126. Growth of Group IV-IV Heterostructures: Initial Stages of Interface Formation, H. -J. Gossmann
and L.C. Feldman, Proc. of Mat. Res. Soc. Symp. 67, 251 (1986).
127. Observation for a 5x5 Surface Reconstruction on Pure Silicon and Its Stability Against Native
Oxide Formation, A. Ourmazd, D.W. Taylor, J. Bevk, B.A. Davidson, L.C. Feldman and J.P.
Mannaerts, Phys. Rev. Lett. 57, 1332 (1986).
128. The Effects of Dopants and Crystal Perfection on the Chemical Vapor Deposition of Tungsten on
Silicon by Silicon Reduction of Tungsten Hexafluoride, M.L. Green, Y.S. Ali, B.A. Davidson,
L.C. Feldman and S. Nakahara, Proc. of Mat. Res. Soc. Symp. 54, 723 (1986).
129. Structure and Properties of Ultra-thin Ge-Si Superlattices, J. Bevk, J.P. Mannaerts, L.C. Feldman,
B.A. Davidson, W.P. Lowe, A.M. Glass, T.P. Pearsall, J. Menendez, A. Pinczuk and A. Ourmazd,
Proc. of Mat. Res. Soc. Symp. 67, 189 (1986).
130. Magnetic Anisotropy in dc Diode Getter Sputtered GdCo Films. How Important is the Argon
Content in the Films? D.D. Bacon, M. Hong, E.M. Gyo rgy, P.K. Gallagher, S. Nakahara and L.C.
Feldman, Appl. Phys. Lett. 48, 730 (1986).
131. Ge-Si Layered Structures: Artificial Crystals and Complex Cell Ordered Superlattices, J. Bevk,
J.P. Mannaerts, A. Ourmazd, L.C. Feldman and B.A. Davidson, Appl. Phys. Let t. 49, 286 (1986).
132. The Influence of Reconstruction on the Initial Stages of Silicon Molecular Beam Epitaxy, H. -J.
Gossmann and L.C. Feldman, Mat. Res. Soc. Symp. Proc. 56, 33 (1986).
133. Preservation of a 7x7 Periodicity at a Buried Amorphous Si/Si(111) Inte rface, J.M. Gibson, H.-J.
Gossmann, J.C. Bean, R.T. Tung and L.C. Feldman, Phys. Rev. Lett. 56, 355 (1986).
134. Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn Interface s, H.-J. Gossmann and L.C. Feldman,
Appl. Phys. Lett. 48, 1141 (1986).
15
Resume - Leonard C. Feldman (Cont.)
135. Influence of Strain on Silicon Surface and Silicon/Oxide Interface Reconstruction, A. Ourmazd,
D.W. Taylor, J. Bevk, B.D. Davidson, L.C. Feldman and J.P. Mannaerts, Defects in
Semiconductors, ed. by H.J. von Bardeleben, Mat. Sci. Forum 10-12, 217 (1986).
136. Ion Scattering Studies of Silicon Based Epitaxy, L.C. Feldman, in Semiconductor -Based
Heterostructures, ed. by M.L. Green, J.E.E. Baglin, G.Y. Chin, H.W. Deckmen, W. Mayo and D.
Norasinham, The Metallurgical Society, Warrendale, Penn. 63 (1986).
137. Structurally Induced Optical Transitions in Ge -Si Superlattices, T.P. Pearsall, J. Bevk, L.C.
Feldman, A. Ourmazd, J.M. Bonor and J.P. Mannaerts, Phys. Rev. Lett. 58, 729 (1987).
138. Strain in Ultra-thin Epitaxial Films of Ge/Si(100) Measured in Ion Scattering and Cha nneling,
L.C. Feldman, J. Bevk, B.A. Davidson, H. -J. Gossmann and J.P. Mannaerts, Phys. Rev. Lett. 59,
664 (1987).
139. Statistical Equilibrium in Particle Channeling, B.A. Davidson, L.C. Feldman, J. Bevk and J.P.
Mannaerts, Appl. Phys. Lett. 50, 135 (1987).
140. The Formation and Structure of CVD W Films Produced by the Si Reduction of WF 6, M.L. Green,
Y.S. Ali, T. Boone, B.A. Davidson, L.C. Feldman and S. Nakahara, J. Electrochem. Soc. Solid
State Science and Tech. 134, 2285 (1987).
141. Interface Formation in IV-IV Heterostructures: The Si/Sn System (Summary Abstract), M. Zinke -
Allmang, H.-J. Gossmann, L.C. Feldman and G.J. Fisanick, J. Vac. Sci. and Tech. A5, 2030
(1987).
142. Structural Analysis of Ultrathin Epitaxial Ge/Si Films on Si(100) (Summary Abstract), J. Bevk, A.
Davidson, L.C. Feldman, H.J. Gossmann, J.P. Mannaerts, S. Nakahara, and A. Ourmazd, J. Vac .
Sci. and Tech. B5, 1147 (1987).
143. Structure and Optical Properties of Ge -Si Ordered Superlattices, J. Bevk, A. Ourmazd, L.C.
Feldman, T.P. Pearsall, J.M. Bonor, B.A. Davidson and J.P. Mannaerts, Appl. Phys. Lett. 50, 760
(1987).
144. Initial Stages of Interface Formation in the Si/Sn System, M. Zinke -Allmang, H.-J. Gossmann,
L.C. Feldman and G.J. Fisanick, Proc. of Mat. Res. Soc. Symp. 77, 703 (1987).
145. Role of Ostwald Ripening in Islanding Processes, M. Zinke -Allmang, L.C. Feldman and S.
Nakahara, Appl. Phys. Lett. 51, 975 (1987).
146. Overlayer Energetics from Thermal Desorption on Si, M. Zinke -Allmang and L.C. Feldman, Surf.
Sci. 191, L749 (1987).
147. Structural and Superconducting Properties of Orientation-ordreed YBa2Cu3O7-x Films Prepared by
Molecular Beam Epitaxy, J. Kwo, T.C. Hsieh, D.M. Fleming, M. Hong, S.H. Kiou, B.A. Davidson
and L.C. Feldman, Phys. Rev. B36, 4039 (1987).
148. Fabrication of Ceramic Articles from High T c Superconducting Oxides, D.W. Johnson, E.M.
Gyorgy, W.W. Rhodes, R.J. Cava, L.C. Feldman and R.B. van Dover, Adv. Ceramic Matls. 2, 364
(1987).
149. Materials Analysis with High Energy Ion Beams: Part I, Rutherford Backscattering, Part II,
Channeling and Light Element Detection, H. -J. Gossmann and L.C. Feldman, Special Issue of
Materials Research Bulletin P. 26 (1987).
16
Resume - Leonard C. Feldman (Cont.)
Bridging the Gap Between Solid-solid and Solid-vacuum Interfaces: A Study of Buried Si/ -Si
150.
Interfaces. (Summar y Abstract); H.-J. Gossmann, J.M. Gibson, J.C. Bean, R.T. Tung and L.C.
Feldman, J. Vac. Sci. and Tech. A5, 1509 (1987).
151. Ion Beam Studies of Thin Film Growth Processes, L.C. Feldman, M. Zinke -Allmang, J. Bevk and
H.-J. Gossmann, Proc. of Hosei Conf. on Ap plications of Ion Beams in Matls. Sci., Hosei, Japan
(1987).
152. Valence-bond Discontinuities in (100)GaSb/AlSb and GaSb/InAs Heterojunctions, G.J. Gualtieri,
R.G. Nuzzo, R.J. Malik, J.F. Walker, L.C. Feldman, W.A. Sunder and G.P. Schwartz (Summary
Abstract), J. Vac. Sci. and Tech. B5, 1284 (1987).
153. New Optical Transitions in Ge-Si Ordered Atomic-Layer Structures, T.P. Pearsall, J. Bevk, L.C.
Feldman, J. M. Bodnar and J.P. Mannaerts, J. Vac. Sci. and Tech. B5, 1274 (1987).
154. Persistent Currents in Cermaic and Evaporated Thin Film Toroids of Ba2YCu3O7, E.M. Gyorgy,
G.S. Grader, D.W. Johnson Jr., L.C. Feldman, D.W. Murphy, W.W. Rhodes, R.E. Howard, P.M.
Mankjewich and W.J. Skocpol, Appl. Phys. Lett. 52, 328 (1988).
155. The Morphology of As Terminated Si(111) from Desorption Kinetics, M. Zinke-Allmang, L.C.
Feldman, J.R. Patel and J.C. Tully, Surf. Sci. 197, 1 (1988).
156. Strained Layer Epitaxy, L.C. Feldman, M. Zinke -Allmang, J. Bevk and H. -J. Gossmann, Proc. of
Int. Conf. Struc. of Solid Surfaces, The Structure of Surfaces II, Springer-Verlag, Berlin,
Amsterdam 412 (1988).
157. Initial Stages of Epitaxial Growth: Gallium Arsenide on Silicon, M. Zinke -Allmang, L.C. Feldman
and S. Nakahara, Appl. Phys. Lett. 52, 144 (1988).
158. Clustering in the Epitaxial Growth of GaAs on Si., M. Zinke -Allmang, L.C. Feldman, S. Nakahara
and J.R. Patel, Proc. of Mat. Res. Soc. 102, 431 (1988).
159. High Tc Superconducting Y-Ba-Cu-O Films by Sputtering and Molecular Beam Epitaxy:
Morphology, Structural Characterization and Superconducting Properties, S.H. Liou, M. Hong,
B.A. Davidson, R.C. Farrow, J. Kwo, T.C. Hsieh, R.M. Fleming, H.S. Chen, L.C. Feldman, A.R.
Kortan and R.J. Felder, Proc. of Special High T c Mtg., A.V.S. (1988).
160. Strained Layer Semiconductor Films: Structure and Stability, L.C. Feldman, J. Bevk, B.A.
Davidson, H.-J. Gossmann, A. Ourmazd, T.P. Pearsall and M. Zinke -Allmang, Proc. of Mat. Res.
Soc. Symp. 102, 405 (1988).
161. Concentration Dependence of Surface Diffusion Coefficients in Clust ering Systems, M. Zinke-
Allmang and L.C. Feldman, Phys. Rev. B37, 7010 (1988).
162. Thin Film Morphology: Equilibrium Between Clusters and Uniform Layers at Non -Zero
Temperature, M. Zinke-Allmang, L.C. Feldman and M. Grabow, Surf. Sci. 200, L427 (1988).
163. Clustering Mechanisms During Growth of GaAs on Silicon, M. Zinke -Allmang, L.C. Feldman and
S. Nakahara, J. Vac. Sci. and Tech. B6, 1137 (1988).
164. Ion Scattering Studies of the Stoichiometry and the Structure of the Si/SiO 2 Interface, L.C.
Feldman, in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, ed. by C.R. Helms
and B.E. Deal, Plenum, New York (1988).
17
Resume - Leonard C. Feldman (Cont.)
165. A Novel Technique to Determine Hetero-Surface Diffusion in Semiconductor Systems, M. Zinke -
Allmang and L.C. Feldman, Appl. Surf. Sci. 33, 395 (1988).
166. Growth Mechanism and Clustering Phenomena: The Ge on Si System, M. Zinke -Allmang, L.C.
Feldman, S. Nakahara and B.A. Davidson, Phys. Rev. B39, 7848 (1989).
167. Ion Beam Induced Hydrogen Release from a -C:H: A Bulk Molecular Recombination Model,
M.E. Adel, O. Amir, R. Kalish and L.C. Feldman, J. of Appl. Phys. 66, 3248 (1989).
168. Stability of Boron- and Gallium Induced Surface Structures on Si(111) During Deposition and
Epitaxial Growth of Silicon, R.L. Headrick, L.C. Feldman and I.K. Robinson, Appl. Phys. Lett.
55, 442 (1989).
3 x 3 R 30 Surface Structure: Subsurface
169. Structure Determination of the Si(111):
Substitutional Doping, R.L. Headrick, I.K. Robinson, E. Vlieg and L.C. Feldman, Phys. Rev. Lett.
63, 1253 (1989).
170. Search for Neutrons from Deuterium-Deuterium Nuclear Reactions in Electrochemically Charged
Palladium, M.M. Broer, L.C. Feldman, A.C.W.P. James, J.S. Kraus and R.S. Raghaven, Phys.
Rev. C40, R1559 (1989).
171. Materials Issues in the Fabrication of a Si/Ge Heterojunction Bipolar Transistor, L.C. Feldman,
Proc. of the 7th Int l. Workshop on Future Electron Devices, Toba, Japan (1989).
172. Depth Dependent Defect Analysis in RBS/Channeling, W. Savin and L.C. Feldman, Nucl. Inst.
and Meth. B45, 417 (1990).
173. Evolution of Terrace Size Distributions During Thin Film Growth by Step -mediated Epitaxy, H-J.
Gossmann, F.W. Sinden and L.C. Feldman, J. of Appl. Phys. 67, 745 (1990).
174. High Gain Si-Ge Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor
Deposition, M.L. Green, D. Brasen, H. Temkin, R.D. Yadvish, J.L. Benton, T. Boone, L.C.
Feldman, M. Ge
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