Jie Zhang

Email: abqhb1@r.postjobfree.com

Address: **** ***** ****

City: Midland

State: MI

Zip: 48642

Country: USA

Phone: 662-***-****

Skill Level: Experienced

Salary Range: $100,000

Willing to Relocate

Primary Skills/Experience:

See Resume

Educational Background:

See Resume

Job History / Details:

Jie Zhang, Ph.D.

2638 Kitty Hawk circle, Midland, Michigan 48642

Cell: 662-***-****

Email: abqhb1@r.postjobfree.com

Career objective: To be part of the driving force for the growth of an exciting company, utilizing my strong technical expertise and sound professional judgment.

QUALIFICATIONS

Project management

Market driven and Cost-effective product development

Comprehensive knowledge in materials science and process technology involving heat transfer, fluid dynamics, and CVD reaction chemistry for thin film deposition

Extensive hands-on experience with CVD equipment for semiconductor thin film processing

Statistical process control

Materials characterization including electrical, structural and optical characterization

EDUCATION

MBA, Northwood University, Midland, Michigan, December, 2011

Ph. D, Department of Physics and Measurement Techniques, Linkoping University, Linkoping, SWEDEN, 2002

Ph.D. Thesis Title: CVD Growth and Material Quality Control of Silicon Carbide

Master of Science, Department of Materials Science, the Royal Institute of Technology, Stockholm, SWEDEN, 1996

Master Thesis Title: Corrosion of Stainless Steel

PROFESSIONAL EXPERIENCE

Process development Specialist, Dow Corning Corporation, Michigan, 2008 - present

Review technology roadmap for SiC epitaxy. Develop new chemical vapor deposition processes to address specific program and business goals

Develop step change processes improvement aided by thermal and chemical simulation

Develop new products driven by market demand

Review the performance of the current process and identify opportunities for continuous improvement using statistical process control and design of experiments.

Develop cost-effective and reliable SiC epitaxial products for device customers

Chief Materials Scientist, SemiSouth Laboratories, Inc., Starkville, MS, 2003 2007

Lead applications oriented R&D efforts in SiC epitaxy, including novel process development and reactor design as well as correlation with device performance.

Successfully lead the project of building an R&D reactor in-house within budget and timeline. Subsequently developed well functioned processes.

Contributed to writing proposals and white papers on topics of interest to government agencies. Total granted funding exceeds $1M.

Conducted process start-up and continuous technology support in both single-wafer and multi-wafer Aixtron planetary CVD reactors. Provided trouble-shooting and engineering solutions as well as training of operational personnel.

Process Specialist, Epigress / Aixtron, Lund, Sweden, 2002 2003

Development of reactor design and modification for the horizontal hot-wall type SiC CVD reactors.

Process startup and optimization in both horizontal hot-wall and Aixtron planetary CVD reactors at customer sites.

Customer support (via on-site visits or by phone and email) to provide process or engineering solutions.

Research Assistant, Linkoping University, Linkoping, Sweden, 1997 2002

Developed high growth rate SiC CVD epitaxy for power device applications through comprehensive process and hardware optimization.

In-depth investigation on the CVD growth behavior in different reactor configurations. The experimental results were also compared with simulations of thermal profiles as well as chemical species distribution.

Comprehensive characterization of the thin film properties. The materials characterization techniques included I-V, C-V, XRD, Deep-Level-Transient Spectrometry (DLTS), photoluminescence (PL), Nomarski Optical Microscope and Atomic Force Microscope (AFM).

Research Engineer, SuperFarad, Stockholm, Sweden, 1996 1997

Analyzed microstructure of novel electrode carbon materials using Scanning Electron Microscope (SEM).

Worked with the planning and equipment purchasing for a new research laboratory for thermal synthesis of the electrode material.

PROFESSIONAL AFFILIATIONS:

Member, Materials Research Society

REFEREED PUBLICATIONS

[1] J. Zhang, U. Forsberg, M. Isacson, A. Ellison, A. Henry, O. Kordina, and E. Janzn, Growth characteristics of SiC in a hot-wall CVD reactor with rotation, Journal of Crystal Growth, Vol.: 241, No.: 4, June, 2002, pp.: 431-438

[2] J. Zhang, A. Ellison, . Danielsson, M.K. Linnarsson, A. Henry and E. Janzn, Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations, J. Cryst. Growth 241 (2002), p. 421

[3] J. Zhang, A. Ellison, A. Henry, M.K. Linnarsson and E. Janzn, Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor, J. Cryst. Growth 226 (2001), p. 267

[4] J. Zhang, A. Ellison and E. Janzn, Morphology control for growth of thick epitaxial 4H-SiC layers, Materials Science Forum 338-342 (2000), p. 137

[5] J. Zhang, L. Storasta, N.T. Son, P. Bergman and E. Janzn, Electrically active defects in n-type 4H-SiC grown in a vertical hot-wall CVD reactor, Journal of Applied Physics, v 93, n 8, Apr 15, (2003), p 4708-4714

[6] J. Zhang, J. Mazzola, C. Hoff, Y. Koshka, and J. Casady, High growth rate (up to 20um/h) SiC epitaxy in a horizontal hot-wall reactor, Materials Science Forum, Vols. 483-485 (2005), p. 77

[7] J. Zhang, J. Mazzola, C. Hoff, C. Rivas, E. Romano, J.R.B. Casady and J.B. Casady, Highly uniform SiC epitaxy for MESFET fabrication, Materials Science Forum vols. 527-529 (2005), p. 195

[8] J. Zhang, J. Mazzola, E. Romano, C. Hoff, M. Mazzola, J.R.B. Casady and J.B. Casady, High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications, presented at Materials Research Society Spring Meeting, San Francisco, USA, April 2006

[9] J. Zhang, J. Mazzola, S. Sunkari, G. Stewart, P.B. Klein, R.M. Ward, E. Glaser, K.K. Lew, K.K. Gaskill, I. Sankin, V. Bondarenko, D. Null, D. Sheridan and M. Mazzola, High Quality Epitaxial Growth on 4 Off-axis 4H SiC with Addition of HCl, presented at International Conference of Silicon Carbide and Related Materials, Otsu, Japan, October 2007

[10] J. Zhang, S. Sunkari, J. Mazzola, B. Tyrrell, G. Stewart, R. Stahlbush, J. Caldwell, P. Clein, M.

Mazzola and J.B. Casady, Epitaxial Growth on 2 Off-axis 4H SiC Substrates with Addition of HCl, presented at Materials Research Society Spring Meeting, San Francisco, USA, April 2008

[11] J. Zhang, E. Romano, I. Sankin, J.N. Merrett, L. Cheng, J.R.B. Casady, C. Hoff, J. Mazzola, J.B. Casady, M. Mazzola, Status of SiC Epitaxy for RF and Power Device Applications, presented at The 4th Compound Semiconductor Manufacturing Expo (CS-MAX) 2005, October 31 November 2, 2005, Palm Springs, CA, USA.

[12] J. Zhang, J. Mazzola, C. Hoff, J. Wyatt, M. Mazzola, and J. Casady, Development of high growth rate (>15um/h) SiC epitaxy in a horizontal hot-wall CVD reator, TMS Letters, Vol. 1, Issue 6, (2004) pp. 121-122.

[13] M. S. Mazzola, S. G. Sunkari, J. P. Mazzola, H. Das, G. Melnychuck, Y. Koshka, J. L. Wyatt, J. Zhang, Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy, Materials Science Forum Vols. 483-485, pp. 387-400.

[14] A. Ellison, J. Zhang, A. Henry and E. Janzn, Epitaxial growth of SiC in a chimney CVD reactor, J. Cryst. Growth 236 (2002), p. 225

[15] A. Ellison, J. Zhang, J. Peterson, A. Henry, Q. Wahab, J.P. Bergman, Yu.N. Makarov, A. Vorobev, A. Vehanen and E. Janzen, High temperature CVD growth of SiC, Materials Science Engineering B61-62 (1999), p. 113

[16] Q. Wahab, A. Ellison, J. Zhang, U. Forsberg, E. Duranova, A. Henry, L.D. Madsen and E. Janzn, Improvements in the electrical performance of high-voltage 3.85 kV 4H SiC Schottky rectifiers processed on hot-wall and chimney CVD films, Mater. Sci. Forum 338-342 (2000), p. 1171

[17] Q. Wahab, A. Ellison, J. Zhang, U. Forsberg, E. Duranova, A. Henry, L.D. Madsen and E. Janzn,

Power Schottky rectifiers and microwave transistors in 4H SiC, Invited talk at Proc. International

Workshop on Semiconductor Devices, Delhi, India (2000), p. 668

[18] C.G Hemmingson, N.T. Son, A. Ellison, J. Zhang and E. Janzen, Negative-U centers in 4H silicon carbide Phys. Rev. B58, R10119 (1998)

[19] A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingsson, N.T. Son

and E. Janzen, Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments, Materials Science Forum, vol. 338-342 (2000), p. 131

[20] A. Ellison, T. Kimoto, I.G. Ivanov, C.Y. Gu, M.R. Leys, Q. Wahab, A. Henry, O. Kordina, J. Zhang, C. Hemmingsson and E. Janzen, Growth and characterization of thickn SiC epilayers by high temperature CVD, Materials Science Forum vol. 264-268 (1998), p. 103

[21] Q. Wahab, A. Ellison, J. Zhang, U. Forsberg, E. Duranova, A. Henry, L.D. Madsen and E. Janzen, Designing, physical simulation and fabrication of high-voltage (3.85kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films, Materials Science Forum, vols. 338-342 (2000), p. 1171

[22] I.G. Ivanov, T. Egilsson, J. Zhang, A. Ellison and E. Janzen, Intrinsic photoconductivity of 6H-SiC and the free-exciton binding energy, Materials Science Forum, vols. 353-356 (2001), p. 405

[23] I.G. Ivanov, J. Zhang, L. Storasta and E. Janzen, Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy, Materials Science Forum, vols. 389-393 (2002), p. 613

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