Electrical Engineer

RAHUL RADHAKRISHNAN

http://eden.rutgers.edu/~pvrahul/

** **** ***** ****** 732-***-****

Piscataway, NJ 08854 ********@*****.***

OBJECTIVE

To obtain a challenging full-time position where I can best utilize my extensive knowledge and five years of experience in power semiconductor device design, fabrication and characterization.

EDUCATION

Rutgers University, New Brunswick, NJ

Ph. D. in Electrical Engineering/Solid state devices- January 2012

M. S. in Electrical Engineering/Solid state devices- October 2009

G. P. A. - 3.67

National institute of technology (NIT), Calicut, India

B. Tech (equivalent to BS) in Electrical Engineering- August 2004

Valedictorian (Department Rank- 1)

RESEARCH EXPERIENCE

Global Power Device Co., Irvine, CA (June ’11- August ‘11) TCAD design of constant dose single and multiple floating zone JTE for SiC Schottky diodes.TCAD and analytical design of 2-D and 3-D SiC JBS diodes.

Rutgers University, Piscataway, NJSpin-on glass based trench filling process for SiC TI-VJFETs. (March ’11- August ‘11) Temperature/dynamic characterization/modeling of integrated VJFET-Diode. (April ’11- June ‘11) Integrated device is found to switch faster.2-dimensional modeling of VJFET/SIT with realistic channel doping. (January ’11- March ‘11)Extension of SIT models to realistic conditions with graded channel doping.Integration of channel length as a parameter in power VJFET design.2-dimensional modeling of high voltage JBS diode. (July ‘10- December ‘10)Developed the first closed form analytical solution for reverse-biased JBS diode.Study of variation of JBS diode breakdown with anode layout.Design and fabrication of novel JFET-Diode power electronic block. (October ‘08- May ‘10)Monolithic integration achieved without additional fabrication steps to that of VJFET.Optimized electric field termination between VJFET and diode. Analysis of uniformity of parameters on 3 SiC wafer by statistical studies. (January- August ‘09)Measured variation in gate threshold voltage, ohmic contact and leakage current on JFETs.Correlated variations of electrical parameters with wafer bow, warp, TTV and defect density.Design and fabrication of a basal plane defect resistant SiC BJT. (June ‘07- March ‘08)Incorporated a novel substrate structure to terminate basal plane defects in SiC.Fabrication and testing of high power (1.2kV, 40A) MPS diode. (March ‘06- April ‘07)Design and PCB implementation of a gate driver for SiC MOSFET. (October ‘05- January ‘06)

Radhakrishnan, Page 2 of 4

Larsen & Toubro, Mumbai, IndiaDesign of novel controller for circuit interrupter extending operational range. (January- July ‘05) Design of Larsen &Toubro’s DU250 Molded-Case-Circuit Breaker. (January- July ‘05)

NIT Calicut, Kozhikode, IndiaModeling of hard disk drive control system and disk dynamics. (January- May ‘04)Building PERL script for catalog search in NALANDA digital library. (January- May ’03)

PUBLICATIONS/ PATENTS/ PRESENTATIONS

R. Radhakrishnan and J. H. Zhao- Development of a SiC Power Electronic Building block (under preparation).

R. Radhakrishnan and J. H. Zhao- A 2-dimensional fully analytical model for design of high-voltage Junction Barrier Schottky (JBS) diodes, Elsevier Solid State Electronics, vol. 63, issue 1, September 2011, p. 167.

R. Radhakrishnan and J. H. Zhao- Monolithic integration of a 4H-SiC Vertical JFET and JBS diode, IEEE Electron Device Letters, vol. 32, issue 6, June 2011, p. 785.

R. Radhakrishnan and J. H. Zhao- Design of an integrated SiC power switch and flyback diode, Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011).

R. Radhakrishnan and J. H. Zhao- Influence of anode layout on the performance of SiC JBS diodes, Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011).

K. Sheng, R. Radhakrishnan, Y. Zhang and J.H. Zhao- "A vertical SiC JFET with monolithically integrated JBS Diode" presented and published in the proceedings of the 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD) in June 2009.

R. Radhakrishnan and S. A. Prabhu- Site convertible thermal structure for circuit breaker Indian Patent filed by Larsen & Toubro Ltd. in December 2005 (No 1514/MUM/2005) and published in Journal No. 26/2007 in June 2007.

Talk on Compound Semiconductor device applications in power electronics" given by invitation of the Electrical Engineering association at NIT Calicut in February 2009.

SKILLS

Device design: Sentaurus Device, Taurus Medici.Process design: Sentaurus Process, Profilecode.Circuit design: Sentaurus Device (mixed-mode), Cadence Virtuoso, PSPICE.Programming: C, MATLAB, Excel, HTML, LABVIEW, SAS, R.Device characterization: I-V at different temperatures, C-V and dynamic testing.Cleanroom: Thorough experience developing processes for full wafers.CAD: AutoCAD, Pro-Engineer.Statistics: Design of experiments, regression, cluster analysis, principal component analysis.Vacuum/Pressure: Maintenance of sputtering, evaporation & CVD systems and furnaces.

Radhakrishnan, Page 3 of 4

TEACHING AND EMPLOYMENT EXPERIENCE

Rutgers University, Piscataway, NJ

Teaching/Research Assistant (September ‘05- present) Served as General physics lab instructor during regular semesters.Served as Graduate Assistant to Professor Jian H. Zhao from 2007-2009.Taught pre-calculus to incoming first year undergraduates in the summer under NJ’s Engineers of the future program.

Global Power Device Co., Irvine, CA

Research Intern (June ‘11- August ‘11) Carried out TCAD simulations with Sentaurus Device and Sentaurus Process.Contributed to writing research funding proposals.

Larsen& Toubro, Mumbai, India

Graduate Engineer Trainee (August- December ’04)

Management Trainee (January- August ‘05) Designed relays and controllers for DU250 Molded Case Circuit Breaker.Conducted short circuit tests for certification of circuit breakers.Designed a novel patented thermal current sensor for circuit breaker.

HONORS AND AWARDS

Gold medal for graduating valedictorian of the electrical engineering class of‘04 at NIT Calicut.Awarded graduate assistantship at Rutgers University in ’07, ‘08 and ‘09.Served as the chairperson of the IEEE student branch at NIT Calicut in ‘03.Selected as a notable blogger, for science blogging at A Posteriori in September 2009.Winner of EE quiz at TATHVA 2004, a national level technology festival, in March 2004.

PROFESSIONAL AFFILIATIONS AND ACTIVITIES

Student member of IEEE Electron Devices Society and American Physical Society.Judged student projects for North Jersey Regional Science fair in 2010.Author and regular contributor to multiple Wikipedia articles.Science blogger at A Posteriori - http://empiricisms.wordpress.com/IEEE student branch chairperson at NIT Calicut. (March 2003- May 2004)Organizer and participant of many trivia quizzing contests.

REFERENCES

Supporting documents are available online at the webpage- http://eden.rutgers.edu/~pvrahul/Prof. Jian H. Zhao (Ph. D. thesis advisor)

Rutgers University Dept. of Electrical and Computer Engineering

Piscataway, NJ, USA

Email: ********@*****.***

Radhakrishnan, Page 4 of 4

Prof. Kuang Sheng (Research supervisor and co-author in graduate school)

Rutgers University Dept. of Electrical and Computer Engineering

Piscataway, NJ, USA

Email: ******@***.*******.***

and

Zhejiang University College of Engineering, China.

Email: ******@***.***.**

Prof. K. P. Mohandas (Undergraduate research project advisor)

NIT Calicut Dept. of Electrical and Electronics Engineering

Kozhikode, India- 673601

Email: ******@****.**.**

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