SHERRA E. (DIEHL) KERNS

Curriculum Vitae

PRESENT POSITIONS AND ADDRESS

F. W. Olin Distinguished Professor of Electrical and Computer Engineering

Founding Vice President of Innovation and Research

Franklin W. Olin College of Engineering

Olin Way

Needham, MA 02492-1200

Telephone: 781-***-****

FAX: 781-***-****

Email: abph1n@r.postjobfree.com

EDUCATION

Mount Holyoke College - A.B., with honors, distinction, Physics

University of Wisconsin - M.A., Physics

University of North Carolina - Ph.D., Physics

NATIONAL AND INTERNATIONAL BOARD POSITIONS AND COMMITTEE ACTIVITIES

Member, ASEE Term of ASEE Presidency Task Force, 2008-present

Member, IEEE Hewlett-Packard Harriett B. Rigas Award Committee, 2008

Member, International Advisory Board (IAB) for the UNESCO Chair in Problem Based Learning in

Engineering Education (UCPBL), 2007-present

Overseer, Thayer School of Engineering, Dartmouth College, 2006-2008

Director, ABET Board, 2006-2009 (elected)

Chair, ABET Ad Hoc Outreach Task Group, 2006-2008

Member, ABET Ad Hoc Outreach Task Group, 2008-present

Member, ABET Ad Hoc Task Group Board Operations, 2006-2008

Member, IEEE Educational Activities Board (EAB) Pre-university Education Coordinating

Committee (PECC), 2006-2008

Member, IEEE Computer Society Technology of the Decade Award Board of Judges, 2005-2006

Member, Advisory Board for E^3 Exploring Ethical Decision-Making in Engineering project), 2005-

present

New England Association of Schools & Colleges, Inc. (NEAS&C), Commission on Institutions of

Higher Education, Evaluation Team Chair, 2005-2006

Chair, ABET EAC Training and Materials Committee, 2005-2006

Board Representative, ABET International Activities Council (INTAC), 2006-2008

Member, ABET INTAC (Team Chair, International Programs Evaluations), 2004-2008

Member, Georgia Tech College of Engineering Advisory Board, 2004-present

ASEE Immediate Past President, 2005-present

Chair, Nominations Committee

Co-chair, ASEE Constitution and Bylaws Committee

Member, Oversight Committee

ASEE President, 2004-2005

Chair, Executive Committee

Chair, Oversight Committee

Member, Finance Committee

Member, Nominating Committee

Member, National Collaborative Task Force on Engineering Graduate Education Reform Executive

Steering Committee, 2004-present

Member, Advisory Board for the Perceptions and Attitudes toward Cheating among Engineering

Students (PACES) Project, 2004-present

Member, National Academy of Engineering (NAE) Center for the Advancement of Scholarship on

Engineering Education (CASEE) Advisory Committee, 2003-2007

Member, Steering Committee, NAE The Engineer of 2020 Project, 2003-2005

ASEE President-Elect, 2003-2004

Chair, Long-Range Planning Committee

Member, Executive Committee

Member, Finance Committee

Member, Oversight Committee

Member, ABET Succession Planning Task Group, 2003-2005

Member, ABET Diversity Task Force, 2003-2005

Member, ABET Ad Hoc Diversity Task Group, 2004-2006

Member, ABET Sustainability Task Force, 2003-2005

Member, IEEE Fellow Selection Committee, 2002-2003

National Judge Advisor, FIRST (For Inspiration and Recognition of Science and Technology)

Robotics Competition, 2002-2007

ASEE First Vice President, 2001-2002

Vice President of Professional Interest Councils, 2001-2002

Chair, ASEE Professional Interest Council I, 2000-2002

Chair, ASEE ECE Division 1998-1999; Vice Chair 1997-1998, Secretary/Treasurer 1996-1997

Member, ASEE Councils Organizational Structure Examination Committee, 2001-2002

EMPLOYMENT HISTORY

September 2007 Present

- F. W. Olin Distinguished Professor of Electrical and Computer Engineering

- Founding Vice President of Innovation and Research

Franklin W. Olin College of Engineering, Needham, MA

September 1999 September 2007

- Vice President for Innovation and Research

- F. W. Olin Professor of Electrical and Computer Engineering

Franklin W. Olin College of Engineering, Needham, MA

May 1989 September 1999

- Director

S. E. Kerns page 2

University Consortium for Research on Electronics in Space

Vanderbilt University, Nashville, TN

July 1993 July 1998

- Chair

Department of Electrical and Computer Engineering

Vanderbilt University, Nashville, TN

August 1987 June 2000

- Professor

Department of Electrical and Computer Science

Vanderbilt University, Nashville, TN

July 1982 August 1987

- Associate Professor

- Assistant Professor

Department of Electrical and Computer Engineering

North Carolina State University, Raleigh, NC

Summers 1981, 1983, 1986

- Technical Staff

Microelectronics Directorate

Sandia National Laboratories, Albuquerque, NM

September 1979 June 1982

- Assistant Professor

Department of Electrical Engineering

Auburn University, Auburn, AL

1977 1979

- Research Associate, N.I.H. Postdoctoral Trainee

Department of Biomedical Engineering

Duke University, Durham, NC

SIMULTANEOUS APPOINTMENTS

September 2007 Present

- Professor of Technology Entrepreneurship

Babson College, Babson Park, MA

September 1999 August 2001

- Visiting Professor

Department of Electrical Engineering and Computer Science

Massachusetts Institute of Technology, Cambridge, MA

August 1987 December 1991

- Adjunct Professor

- Adjunct Associate Professor

Department of Electrical and Computer Engineering

North Carolina State University, Raleigh, NC

March 1985 1994

- Adjunct Professor

S. E. Kerns page 3

- Adjunct Associate Professor

Department of Nuclear Engineering and Engineering Physics

Rensselaer Polytechnic Institute, Troy, NY

AWARDS, HONORS, AND RECOGNITIONS

The Gordon Institute of Tufts University Distinguished Speaker Award for Engineering &

Engineering Education in the 21st Century 2005

Fellow of the ASEE (American Society for Engineering Education) 2003

RCU (Robot Chicks Union a national society of FIRST (For Inspiration and Recognition of

Science and Technology) young women) Illuminary X 2003

ECEDHA (Electrical and Computer Department Heads Association) Leadership and Service Award

2002

IEEE (Institute for Electrical and Electronics Engineers) Millennium Medal 2000

ASEE ECE Distinguished Educator Award 2000

IEEE Hewlett-Packard Harriett B. Rigas Award for the Outstanding Woman Engineering Educator

1999

Who s Who in the World 1998 (and onward until I stopped completing the forms)

Member, Naval Studies Board, National Research Council, National Academy of Sciences 1990-

1996

Award for Outstanding Undergraduate Teaching (Vanderbilt University) 1990

Fellow of the IEEE 1990

ALCOA Foundation Engineering Research Achievement Award 1986

Senior Member of the IEEE 1985

North Carolina State University s ASEE Outstanding Research Award 1984 and 1985

NIH (National Institutes of Health) Postdoctoral Traineeship 1977

Award for Excellence in Teaching (University of Wisconsin) 1970

Society of Sigma Xi 1968

Sarah Williston Scholar (Mt. Holyoke College) 1966

Commissioner, Accreditation Board for Engineering and Technology, Inc. (ABET), Engineering

Accreditation Commission (EAC), 2000-present

Member-at-Large, 2005-2006

Executive Committee 2004-present

Engineering Criteria 2000 Team Chair, 2000-present

Member, Training and Materials Development Sub-committee, 2000-2005

Evaluator, Accreditation Board for Engineering and Technology, Inc. (ABET), Engineering

Accreditation Commission 1993-present

Member, Judge Advisory Board, FIRST Robotics Competition, 2000-present

Chair, ASEE Sharon Keillor Award Selection Committee, 2000-2003

Secretary, IEEE Education Society, 2000-2002

Member, IEEE Education Society, Administrative Committee, 2000-2002

Member, IEEE Hewlett-Packard Harriett B. Rigas Award Selection Committee, 2000-2004; Chair,

2002

S. E. Kerns page 4

Chair, Frontiers in Education (FIE) Steering Committee, 2000-2002

Trustee, StandardsWork, 2000-present

Member, National Electrical Engineering Department Heads, Accreditation Issues Committee, 1999-

2001

Chair, IEEE Education Society Fellow Selection Committee, 1999-2001

Member, IEEE Education Society Fellow Selection Committee, 1993-2001

Member, ECE Advisory Board, Worcester Polytechnic Institute, 1999-present

Member, IEEE/EAC/APC Committee on Best Practices, 1999-2001

Liaison, IEEE/EAC/ABET Committee on Technology Accreditation Activities, 1999-2001

Member, Semiconductor Research Corporation, University Advisory Board, 1998-2001

Chair, National Electrical Engineering Department Heads Association Committee on Accreditation

Activities, 1997-2000

Member, Microelectronics and Photonics Test Bed Working Group, 1997-1999

Member, IEEE/EAC/ABET Committee on Engineering Accreditation Activities, 1996-2001

Member, Board of Directors, Southeastern Center for Electrical Engineering Education, 1996-1999

Member, External Review Committee, Georgia Institute of Technology, 1996-1998

President, National Electrical Engineering Department Heads Association (now named Electrical

and Computer Engineering Department Heads Association), 1995

Vice President 1994; Secretary/Treasurer 1994; Jr. and Sr. Past-President 1996-1998

Member, Naval Studies Board, National Research Council, National Academy of Sciences, January

1990-1996

Member, National Research Council Panel on Research Opportunities in Radiation Sciences, 1988-

1992

Member, Superconducting Supercollider Task Force on Radiation Hardened Electronics, 1988-1990

Advisor, Superconducting Supercollider Central Design Group, 1988-1990

Editor, Proceedings of the IEEE, Special Section on Space Radiation Effects on Microelectronics,

November, 1988

Technical Program Chairman, IEEE Nuclear and Space Radiation Effects Conference, 1987

Chairman, Radiation Hardening Session, Government Microcircuit Applications Conference, 1986,

1987

Advisor, Strategic Defense Initiative Office, SAT-8 and A1104, Electronics Hardening and

Vulnerability, SDIO, 1985-1992

Member, Steering Committee, IEEE Nuclear and Space Radiation Effects Conference, 1985, 1987

Organizer, Short Courses, IEEE Nuclear and Space Radiation Effects Conference, 1985

Member, IEEE Nuclear and Plasma Sciences Society Administrative Committee, 1985-1993

Co-Chairman, Organizer, Workshop on Microelectronics for Hazardous and Extreme Conditions,

IEEE International Conference on Industrial Electronics, Control and Instrumentation, 1984

Co-Chairman, Advanced MOS Devices and Models, IEEE International Electron Devices Meeting,

1984

Member, Program Committee, IEEE International Electron Devices Meeting, 1983, 1984

Co-Chairman, Low Voltage Monolithic Devices Session, IEEE International Electron Devices

Meeting, 1983

Chairman, Single Event Phenomena Session, IEEE Nuclear and Space Radiation Effects

Conference, 1983

S. E. Kerns page 5

Member, CRRES (Combined Release and Radiation Effects Satellite) Working Group, 1982-1993

SPONSORED RESEARCH ACTIVITIES (AS PRINCIPAL INVESTIGATOR OR CO-PRINCIPAL

INVESTIGATOR)

High Performance MOS Technologies for Very Large Scale Integration (VLSI), Engineering Experiment

Station, Auburn University, R. C. Jaeger and S. E. Diehl, Co-Principal Investigators, October 1, 1981

- September 30, 1982, $80,000.

Stability of CMOS RAM Logic Against Effects of High Energy Ionizing Radiation, Sandia National

Laboratories, S. E. Diehl, Principal Investigator, November 12, 1981 - July 12, 1982, $26,000.

Low Pressure Chemical Vapor Deposition Equipment, National Science Foundation, R. C. Jaeger and S. E.

Diehl, Co-Principal Investigators, January 1, 1982 - June 30, 1983, $60,600.

Logic Stability in MOS Memories, Sandia National Laboratories, S. E. Diehl, Principal Investigator, June

15, 1982 - September 15, 1982, $12,000.

Investigation of Stability Criteria for CMOS Random Logic, Sandia National Laboratories, S. E. Diehl,

Principal Investigator, October 1, 1982 - September 30, 1983, $40,040.

Prevention of Ion-Induced Errors in Integrated Logic Circuits, Naval Research Laboratories, S. E. Diehl

and J. R. Hauser, Co-Principal Investigators, December 1, 1982 - November 30, 1983, $105,798.

Technology for High Performance MOS Analog VLSI, National Science Foundation, R. C. Jaeger and S.

E. Diehl, Co-Principal Investigators, January 1, 1983 - December 31, 1983, $38,000.

Investigation of Stability Criteria for CMOS Random Logic, Sandia National Laboratories, S. E. Diehl,

Principal Investigator, (renewal) through September 30, 1984, $48,542.

CMOS Latch-up Problems, included in a Plan for Research in Integrated Circuit Manufacturing

Technology, Semiconductor Research Corporation, S. E. Diehl, Investigator, April 1, 1983 -

December 31, 1983, $1,259,946.

Prevention of Ion-Induced Errors in Integrated Logic Circuits, Naval Research Laboratories, S. E. Diehl

and J. R. Hauser, Co-Principal Investigators, (renewal) through February 18, 1985, $154,994.

A Semiconductor Parametric Analysis System and Preliminary Modeling of Selected Integrated Circuits for

the CRRES Microelectronics Package, NCSU, S. E. Diehl and J. R. Hauser, Co-Principal

Investigators, September 17, 1984 - January 31, 1986, $111,174 and $70,640.

Analog Input Stages for Gate Arrays, The General Electric Microelectronics Center, J. R. Hauser and S. E.

Diehl, Co-Principal Investigators, June 1, 1984 - May 31, 1985, $17,727.

Investigation of Stability Criteria for CMOS Digital Integrated Circuits, Sandia National Laboratories, S. E.

Diehl, Principal Investigator, November 1, 1984 - September 30, 1985, $58,065.

Simulation of Integrated Circuit Upsets, Computer Sciences Corporation, S. E. Diehl, Principal

Investigator, January 1, 1985 - December 15, 1985, $47,645.

Prevention of Ion-Induced Errors in Integrated Logic Circuits, Naval Research Laboratory, S. E. Diehl and

J. R. Hauser, Co-Principal Investigators, May 1, 1985 - March 1, 1987, $215,000.

Studies of Single Event Effects in Microelectronics, Naval Research Laboratory, S. E. Diehl, Principal

Investigator, September 15, 1985 - September 14, 1987, $418,510.

Preliminary Modeling of Selected Integrated Circuits for the CRRES Microelectronics Package, S. E. Diehl

and J. R. Hauser, Co-Principal Investigators, September 17, 1985 - December 17, 1985, $13,293

(Supplemental Funding).

Investigation of Stability Criteria for CMOS Digital Integrated Circuits, Sandia National Laboratories, S. E.

Diehl, Principal Investigator, October 1, 1985 - September 30, 1986, $59,995.

Modeling CRRES MEP SRAMs, Naval Research Laboratories, S. E. Diehl and J. R. Hauser, Co-Principal

Investigators, September 17, 1985 - February 28, 1987, $50,000.

Upset Phenomena in Digital Integrated Circuits, Sandia National Laboratories, S. E. Diehl, Principal

Investigator, October 1, 1986 - September 30, 1987, $60,000.

Studies of Radiation Effects in Microelectronics, Naval Research Laboratory, S. E. Diehl, Principal

Investigator, October 1, 1986 - September 30, 1987, $395,054.

S. E. Kerns page 6

Prevention of Single Event Upsets in Microelectronics, Defense Nuclear Agency, S. E. Diehl and J. R.

Hauser, Co-Principal Investigators, November 15, 1986 - July 14, 1990, $752,897.

Research Equipment for Computer-Aided Design of Radiation-Hardened Microelectronics, Sandia

National Laboratories, S. E. Diehl, Principal Investigator, January 5, 1987 - September 1, 1987,

$77,007.

Single Event Upset Studies, N. C. State University (subcontract), S. E. Kerns, Principal Investigator, July 1,

1987 - November 14, 1990, $210,326.

Analyses of Radiation Effects in ICs, Harris Semiconductor Corporation, S. E. Kerns and L. W.

Massengill, Co-Principal Investigators, January 1, 1989 - February 28, 1990, $75,624.

IPA Assignment Agreement, Air Force Weapons Laboratory, S. E. Kerns, Principal Investigator, March 1,

1989 - September 30, 1989, $66,227.

PARA, Harry Diamond Laboratory, S. E. Kerns and B. L. Bhuva, Co-Principal Investigators, March 1,

1990 - September 30, 1991, $51,455.

Research Funding for the University Consortium for Research on Electronics in Space (UCRES), Naval

Research Laboratory, S. E. Kerns, Principal Investigator, October 1, 1989 - April 30, 1994,

$5,999,778 (multi-university).

Single-Event Effects on SOIC, Naval Research Laboratory, L. W. Massengill and S. E. Kerns, Co-Principal

Investigators, March 1, 1990 - February 28, 1991, $50,000.

Transient Analysis of Harris RHD1 SOI Devices and Circuits, Harris Semiconductor Corporation, L. W.

Massengill and S. E. Kerns, Co-Principal Investigators, March 1, 1990 - February 28, 1991, $48,347.

Reliability and Performance Degradation of Advanced Commercial CMOS Technologies Using X-Ray

Lithography, Semiconductor Research Corporation, D. V. Kerns and S. E. Kerns, Co-Principal

Investigators, January 1, 1991 - December 31, 1993, $600,000 (multi-university).

Transient Analysis of Harris RHD1 SOI Devices and Circuits, Harris Semiconductor Corporation, L. W.

Massengill and S. E. Kerns, Co-Principal Investigators, March 1, 1990 - February 28, 1991, $48,347.

Effects of X-Rays on CMOS, Defense Advanced Research Projects Agency / Naval Research Laboratory,

S. E. Kerns and D. V. Kerns, Co-Principal Investigators, October 1, 1991 - September 30, 1994,

$411,295.

MOS Device Damage Associated with the SCALPEL Approach, American Telephone & Telegraph

Company, S. E. Kerns, Principal Investigator, March 8, 1993 - December 31, 1994, $99,968.

An Integrated Reliability Approach for Advanced CMOS Technologies, Semiconductor Research

Corporation, S. E. Kerns, Principal Investigator, October 1, 1993 - August 31, 1994, $82,500.

Research Funding for the University Consortium for Research on Electronics in Space (UCRES), Naval

Research Laboratory, S. E. Kerns, Principal Investigator, May 1, 1994 - November 30, 1998,

$7,262,373 (multi-university).

An Integrated Reliability Approach for Advanced Deep Submicron Devices and VLSI Circuits,

Semiconductor Research Corporation, S. E. Kerns, Principal Investigator, September 1, 1994 -

August 31, 1995, $204,731.

MOS Device Damage Associated with the SCALPEL Approach, American Telephone & Telegraph

Company, S. E. Kerns and B. L. Bhuva, Co-Principal Investigators, October 1, 1994 - April 30, 1999,

$110,729.

Support for Randall J. Milanowski, Dynamic Research Corporation, S. E. Kerns, Principal Investigator,

September 1, 1995 - June 30, 1999, $42,850.

An Integrated Reliability Approach for Devices Fabricated Using Plasma Etching Techniques,

Semiconductor Research Corporation, S. E. Kerns and B. L. Bhuva, Co-Principal Investigators,

September 1, 1995 - March 31, 1998, $436,060.

Reliability of Advanced CMOS Technologies, Sandia National Laboratories, S. E. Kerns and B. L. Bhuva,

Co-Principal Investigators, October 1, 1997 - September 30, 1998, $50,000.

Travel for Low-Power SEU Review Team, Naval Research Laboratory, D. V. Kerns and S. E. Kerns, Co-

Principal Investigators, June 1997 - October 1999, $12,240.

S. E. Kerns page 7

An All-Silicon Based Optical Interconnect Technology, Semiconductor Research Corporation, D. V.

Kerns, Bharat L. Bhuva and S. E. Kerns, Co-Principal Investigators, May 1997 - March 2001,

$614,314.

SELECTED REFEREED PUBLICATIONS

J. T. McCown, E. Evans and S. Diehl, Degree of Hydration and Lateral Diffusion in Phospholipid

Multibilayers, Biochemistry, pp. 3134-3138, 1981.

J. T. McCown, E. A. Evans, S. E. Diehl and H. C. Wiles, The Effects of Hydration on Lateral Diffusion in

Egg Lecithin Multibilayers, Biophysical Journal, p. A113, 1981.

W. A. Kolasinski, R. Koga, J. B. Blake and S. E. Diehl, Soft Error Susceptibility of a CMOS RAM:

Dependence Upon Power Supply Voltage, IEEE Transactions on Nuclear Science, pp. 4013-4016,

December 1981.

R. C. Jaeger, F. H. Gaensslen and S. E. Diehl, Efficient Numerical Simulation of MOS Capacitance for a

Wide Range of Temperatures, Impurity Profiles and Surface State Densities, International Solid State

Circuits Digest of Technical Papers, pp. 14-15, February 1982.

S. E. Diehl, A. Ochoa, Jr., P. V. Dressendorfer, R. Koga and W. A. Kolasinski, Error Analysis and

Prevention of Cosmic Ion-Induced Soft Errors in Static CMOS RAMs, IEEE Transactions on

Nuclear Science, pp. 2032-2039, December 1982.

J. Andrews, J. Schroeder, B. Gingerich, W. Kolasinski, R. Koga and S. Diehl, A Single Event Error Immune

CMOS RAM, IEEE Transactions on Nuclear Science, pp. 2040-2043, December 1982.

R. C. Jaeger, F. H. Gaensslen and S. E. Diehl, An Efficient Numerical Algorithm for Simulation of MOS

Capacitance, IEEE Transactions on Computer Aided Design, pp. 111-116, April 1983.

S. E. Diehl, J. E. Vinson, B. D. Shafer and T. M. Mnich, Considerations for Single Event Immune VLSI

Logic, IEEE Transactions on Nuclear Science, pp. 4501-4507, December 1983.

E. L. Petersen, J. B. Langworthy and S. E. Diehl, Suggested Single Event Upset Figures of Merit, IEEE

Transactions on Nuclear Science, pp. 4533-4539, December 1983.

R. C. Jaeger, R. M. Fox and S. E. Diehl, Analytical Expressions for the Critical Charge in CMOS Static RAM

Cells, IEEE Transactions on Nuclear Science, pp. 4616-4619, December 1983.

T. M. Mnich, S. E. Diehl, B. D. Shafer, R. Koga, W. A. Kolasinski and A. Ochoa, Jr., Comparison of

Analytical Models and Experimental Results for Single Event Upset in CMOS SRAMs, IEEE

Transactions on Nuclear Science, pp. 4620-4623, December 1983.

L. W. Massengill and S. E. Diehl, Prediction and Optimization of Transient Radiation Soft Error

Thresholds by Computer Simulation, Proceedings of the 1984 Government Microcircuits Applications

Conference, pp. 430-434, November 1984.

S. E. Diehl, A New Class of Single Event Soft Errors, IEEE Transactions on Nuclear Science, pp. 1145-1148,

December 1984.

S. E. Diehl, J. E. Vinson and E. L. Petersen, Single Event Upset Rate Predictions for Complex Logic

Systems, IEEE Transactions on Nuclear Science, pp. 1132-1138, December 1984.

A. R. Knudson, A. B. Campbell, P. Shapiro, W. J. Stapor, E. A. Wolicki, E. L. Petersen, S. E. Diehl, J. R.

Hauser and P. V. Dressendorfer, Charge Collection in Multilayer Structures, IEEE Transactions on

Nuclear Science, pp. 1149-1154, December 1984.

L. W. Massengill and S. E. Diehl, Transient Radiation Upset Simulations of CMOS Memory Circuits,

IEEE Transactions on Nuclear Science, pp. 1337-1343, December 1984.

L. W. Massengill, S. E. Diehl, T. M. Mnich, T. F. Wrobel and P. V. Dressendorfer, Transient Radiation

Hardening of CMOS LSI and VLSI Memory Circuits, Journal of Radiation Effects, Technology and

Research, pp. 12-16, Winter 1984.

L. W. Massengill and S. E. Diehl, Voltage Span Modeling of Very Large Memory Arrays, in NASECODE

IV; Proceedings of the Fourth International Conference on the Numerical Analysis of Semiconductor Devices and

Integrated Circuits, pp. 396-404, 1985.

S. E. Kerns page 8

J. R. Hauser, S. E. Diehl, A. R. Knudson, A. B. Campbell, W. J. Stapor and P. Shapiro, Ion Track Shunt

Effects in Multi-Junction Structures, IEEE Transactions on Nuclear Science, pp. 4115-4121, December

1985.

R. L. Johnson, S. E. Diehl and J. R. Hauser, Approach for Modeling Single Event Upsets on Advanced

CMOS SRAMs, IEEE Transactions on Nuclear Science, pp. 4122-4127, December 1985.

T. R. Weatherford, J. R. Hauser and S. E. Diehl, A Study of Single Events in GaAs SRAMs, IEEE

Transactions on Nuclear Science, pp. 4170-4175, December 1985.

L. W. Massengill, S. E. Diehl and T. W. Wrobel, Analysis of Transient Radiation Upset in a 2K SRAM,

IEEE Transactions on Nuclear Science, pp. 4026-4030, December 1985.

A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, S. E. Diehl and J. R. Hauser, Charge Collection in

CMOS/SOS Structures, IEEE Transactions on Nuclear Science, pp. 4128-4132, December 1985.

S. E. Diehl and J. R. Hauser, Improved CMOS SRAM Cell for Single Event Environments, Journal of

Radiation Effects, Technology and Research, Vol. 4, March 1986.

R. L. Johnson, A. T. Brown, S. E. Diehl and T. M. Mullen, GO - Project Management Software,

Engineering Education, pp. 117-120, November 1986.

M. R. Ackermann, R. Mikawa, L. W. Massengill and S. E. Diehl, Factors Contributing to CMOS Static RAM

Upset, IEEE Transactions on Nuclear Science, pp. 1524-1529, December 1986.

W. J. Stapor, R. L. Johnson, Jr., M. A. Xapsos, K. W. Fernald, A. B. Campbell, B. L. Bhuva and S. E. Diehl,

Single Event Upset Temperature Dependence on an NMOS Resistive-Load Static RAM, IEEE

Transactions on Nuclear Science, pp. 1610-1615, December 1986.

B. L. Bhuva, J. J. Paulos and S. E. Diehl, Simulation of Worst-Case Total Dose Radiation Effects in CMOS

VLSI Circuits, IEEE Transactions on Nuclear Science, pp. 1546-1551, December 1986.

A. T. Brown, L. W. Massengill, S. E. Diehl and J. R. Hauser, A Model of Transient Radiation Effects in

GaAs Static RAM Cells, IEEE Transactions on Nuclear Science, pp. 1519-1523, December 1986.

T. R. Weatherford, J. R. Hauser and S. E. Diehl, Comparisons of Single Event Vulnerability of GaAs

SRAMS, IEEE Transactions on Nuclear Science, pp. 1590-1596, December 1986.

L. W. Massengill, S. E. Diehl and J. S. Browning, Dose-Rate Upset Patterns in a 16K CMOS SRAM, IEEE

Transactions on Nuclear Science, pp. 1541-1545, December 1986.

R. L. Johnson, Jr. and S. E. Diehl, An Improved Single Event Resistive Hardening Technique for CMOS

Static RAMs, IEEE Transactions on Nuclear Science, pp. 1730-1733, December 1986.

T. R. Weatherford, J. R. Hauser and S. E. Diehl, Analysis of GaAs SRAMs Response to Single Events,

Natural Space Radiation and VLSI Technology Conference Proceedings, January 1987.

B. L. Bhuva, J. J. Paulos, S. E. Diehl, J. H. Moreadith, S. N. Hong and R. W. Waltman, Statistical Parameter

Distribution in Total Dose Environments, Natural Space Radiation and VLSI Technology Conference

Proceedings, January 1987.

S. E. Diehl, SEU Hardening Approaches, Natural Space Radiation and VLSI Technology Conference Proceedings,

January 1987.

J. A. Lukanc, R. J. Veres, S. C. Boon, C. H. Boler, R. J. Byrne, S. E. Kerns and L. W. Massengill, A Fast,

Radiation-Hardened VHSIC 2kX9 SRAM Within a Standard Cell Library, Proceedings of the 1987

Government Microcircuits Applications Conference, pp. 119-122, November 1987.

M. A. Xapsos, P. Shapiro, W. J. Stapor, A. B. Campbell, A. R. Knudson, L. W. Massengill, S. E. Kerns and

K. W. Fernald, Static RAM Memory Upsets in a Combined Single Event and Dose Rate

Environment, Proceedings of the 1987 Government Microcircuits Applications Conference, pp. 123-126,

November 1987.

B. L. Bhuva, R. L. Johnson, Jr., R. S. Gyurcsik, K. W. Fernald, S. E. Kerns, W. J. Stapor, A. B. Campbell and

M. A. Xapsos, Quantification of the Memory Imprint Effect for a Charged Particle Environment,

IEEE Transactions on Nuclear Science, pp. 1414-1418, December 1987.

R. S. Gyurcsik, D. W. Thomas, R. H. Gallimore, B. L. Bhuva and S. E. Kerns, Timing and Area

Optimization of CMOS Combinational-Logic Circuits Accounting for Total-Dose Radiation

Effects, IEEE Transactions on Nuclear Science, pp. 1386-1391, December 1987.

S. Verghese, J. J. Wortman and S. E. Kerns, A Novel CMOS SRAM Feedback Element for SEU

Environments, IEEE Transactions on Nuclear Science, pp. 1641-1646, December 1987.

S. E. Kerns page 9

M. A. Xapsos, L. W. Massengill, W. J. Stapor, P. Shapiro, A. B. Campbell, S. E. Kerns, K. W. Fernald and A.

R. Knudson, Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton

Beams, IEEE Transactions on Nuclear Science, pp. 1419-1425, December 1987.

K. W. Fernald and S. E. Kerns, Simulation of Proton-Induced Energy Deposition in Integrated Circuits,

IEEE Transactions on Nuclear Science, pp. 981-986, February 1988.

B. L. Bhuva and S. E. Kerns, Radiation Hardness Assurance for Total Dose Environments, Proceedings of the

1988 VHSIC/VLSI Qualification, Reliability and Logistics Workshop, pp. 377-387, April 1988.

S. E. Kerns, Simulation Techniques for the Analysis of Single-Event Upset in ICs, Journal of Radiation

Effects, Technology and Research, pp. 63-77, September 1988.

T. R. Weatherford, J. R. Hauser and S. E. Kerns, Basic Mechanisms in GaAs SEU Response, Journal of

Radiation Effects, Technology and Research, pp. 56-62, September 1988.

S. E. Kerns and K. F. Galloway, Space Radiation Effects on Microelectronics, Proceedings of the IEEE, pp.

1403-1405, November 1988.

S. E. Kerns, B. D. Shafer, L. R. Rockett Jr., J. S. Pridmore, D. F. Berndt, N. van Vonno and F. E. Barber,

The Design of Radiation-Hardened ICs for Space: A Compendium of Approaches, invited,

Proceedings of the IEEE, pp. 1470-1509, November 1988.

N. Kaul, B. L. Bhuva and S. E. Kerns, An Approach to Prediction of Total Dose Failure Modes and

Levels, Proceedings of the 1988 Government Microcircuits Applications Conference, pp. 43-46, November

1988.

L. W. Massengill, S. E. Kerns and M. A. Xapsos, The Response of Resistive-Load SRAMs to Dose-Rate

Environments, Proceedings of the 1988 Government Microcircuits Applications Conference, pp. 63-66,

November 1988.

W. J. Stapor, P. T. McDonald, S. L. Swickert, A. B. Campbell, L. W. Massengill and S. E. Kerns, Low

Temperature Proton Induced Upsets in NMOS Resistive Load Static RAM, IEEE Transactions on

Nuclear Science, pp. 1596-1601, December 1988.

N. Kaul, B. L. Bhuva and S. E. Kerns, Performance Analysis of CMOS ICs in Total Dose Environments,

IEEE Proceedings of the 1989 Southeastcon Conference, pp. 940-944, April 1989.

S. Verghese, J. R. Hauser, J. J. Wortman and S. E. Kerns, Forward-Bias Conduction of Schottky Diodes on

Polysilicon Thin Films, IEEE Transactions on Electron Devices, pp. 1311-1317, July 1989.

B. L. Bhuva, J. J. Paulos, R. S. Gyurcsik and S. E. Kerns, Switch-Level Simulation of Total Dose Effects on

CMOS VLSI Circuits, IEEE Transactions Computer Aided Design, pp. 933-938, September 1989.

M. L. Alles, S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., T. W. Houston, H. Lu and L. R. Hite,

Characterization of Single-Event Vulnerability of CMOS-SOI Transistors, Proceedings of the

Government Microcircuits Applications Conference (GOMAC-89), pp. 397-400, November 1989.

A. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kang, D.

Kerns, and S. Kerns, Ion Induced Charge Collection in GaAs MESFETS, IEEE Transactions on

Nuclear Science, pp. 2292-2299, December 1989.

S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., M. L. Alles, T. W. Houston, H. Lu and L. R. Hite, Model for

CMOS/SOI Single-Event Vulnerability, IEEE Transactions on Nuclear Science, pp. 2305-2310,

December 1989.

J. R. Hauser and S. E. Kerns, Circuit Related Issues Due to Radiation in Hostile Environments, Journal of

Electronic Materials, pp. 671-688, January 1990.

L. W. Massengill, D. V. Kerns, Jr., S. E. Kerns and M. L. Alles, Single-Event Charge Enhancement in SOI

Devices, IEEE Electron Device Letters, pp. 98-99, February 1990.

N. Kaul, B. L. Bhuva and S. E. Kerns, Worst-Case Operating Frequency Determination of CMOS Digital

VLSI Circuits Operating in Hostile Environments, Proceedings of the 22nd Southeastern Symposium on

System Theory, pp. 511-515, March 1990.

M. L. Alles, K .L. Jones, J. E. Clark, J. C. Lee, W. F. Kraus, S. E. Kerns and L. W. Massengill, Rad-Hard

SOI/SRAM Design Using a Predictive SEU Device Model, Proceedings of the Government Microcircuits

Applications Conference (GOMAC-90), November 1990.

M. L. Alles, J. C. Lee, L. W. Massengill and S. E. Kerns, High Frequency Diffusion Capacitance in

SOI/SEU Modeling, Proceedings of the 1990 SOI/SOS Conference, November 1990.

S. E. Kerns page 10

N. Kaul, B. L. Bhuva, V. Rangavajjhala, H. van der Molen and S. E. Kerns, Simulation of Design

Dependent Failure Exposure Levels for CMOS ICs, IEEE Transactions on Nuclear Science, pp. 2097-

2103, December 1990.

B. L. Bhuva, S. Mehotra, L. W. Massengill and S. E. Kerns, Automated Photocurrent and Bussing

Extraction for Dose-Rate Rail Span Collapse Simulations, IEEE Transactions on Nuclear Science, pp.

2104-2109, December 1990.

C. Song, D. V. Kerns, J. L. Davidson, W. Kang and S. Kerns, Evaluation and Design Optimization of the

Piezoresistive Gauge Factor of Thick Film Resistors, Proceedings of IEEE Southeastcon 1991, pp. 1106-

1109, April 1991.

C. Song, D. V. Kerns, J. L. Davidson, W. Kang, S. Kerns and d. L. Kinser, Measurement of Metal

Migration on Thick Film Piezoresistors and Their Termination, Proceedings of IEEE Southeastcon

1991, pp. 1110-1112, April 1991.

M. L. Alles, S. E. Kerns, L. Massengill, J. E. Clark and K. L. Jones, Body Tie Placement in CMOS/SOI

Digital Circuits for Transient Radiation Environments, IEEE Transactions on Nuclear Science, pp.

1259-1264, December 1991.

N. Kaul, B. L. Bhuva and S. E. Kerns, Simulation of SEU Transients in CMOS ICs, IEEE Transactions on

Nuclear Science, pp. 1514-1520, December 1991.

M. L. Alles, L. W. Massengill, S. E. Kerns, K. L. Jones, J. E. Clark and W. F. Kraus, Effect of Temperature-

Dependent Bipolar Gain Distribution on SEU Vulnerability of SOI CMOS SRAMS, 1992 IEEE

International SOI Conference Proceedings, October 1992.

V. S. Rangavajjhala, B. L. Bhuva and S. E. Kerns, Statistical Degradation Analysis of Digital CMOS IC's,

IEEE Transactions on C.A.D. of Integrated Circuits and Systems, pp. 837-844, June 1993.

S. Kerns, Hardening at the Design Level, Proceedings of the Second European Conference on Radiation and its Effects

on Components and Systems, pp. 413-415, September 1993.

L. W. Massengill, M. L. Alles, and S. E. Kerns, SEU Error Rates in Advanced Digital CMOS, Proceedings of

the Second European Conference on Radiation and its Effects on Components and Systems, pp. 546-553,

September 1993.

R. J. Milanowski, M. P. Pagey, A. I. Matta, L. W. Massengill, B. L. Bhuva, and S. E. Kerns, Combined Effect

of X-Irradiation and Forming Gas Anneal on the Hot-Carrier Response of MOS Oxides, IEEE

Transactions on Nuclear Science, pp. 1360-1365, December 1993.

A. O. Brown, B. L. Bhuva, S. E. Kerns, and W. J. Stapor, Practical Approach to Determining Charge

Collected in Multi-Junction Structures Due to the Ion Shunt Effect, IEEE Transactions on Nuclear

Science, pp. 1918-1925, December 1993.

L. W. Massengill, M. L. Alles, S. E. Kerns and K. L. Jones, Effects of Process Parameter Distributions and

Ion Strike Locations on SEU Cross-Section Data (CMOS SRAMs), IEEE Transactions on Nuclear

Science, pp. 1804-1811, December 1993.

S. Velacheri, L. W. Massengill and S. E. Kerns, Single-Event-Induced Charge Collection and Direct Channel

Conduction in Submicron MOSFETs, IEEE Transactions on Nuclear Science, pp. 2013-2111,

December 1994.

M. P. Pagey, R. J. Milanowski, K. T. Henegar, B. L. Bhuva and S. E. Kerns, Comparison of Forming Gas,

Nitrogen, and Vacuum Anneal Effects on X-Ray Irradiated MOSFETs, IEEE Transactions on

Nuclear Science, pp. 1758-1763, December 1995.

M. P. Pagey, R. J. Milanowski, E. S. Snyder, N. Bui, B. L. Deem, B. L. Bhuva and S. E. Kerns, Unified

Model for n-Channel Hot-Carrier Degradation Under Different Degradation Mechanisms,

Proceedings of the International Reliability Physics Symposium, April 1996.

V. Janapaty, B. Bhuva, N. Bui and S. Kerns, Coupling Between Hot-Carrier Degradation Modes of

pMOSFETs, Proceedings of SPIE Conference on Microelectronic Manufacturing Yield, Reliability, and Failure

Analysis, October 1997.

V. Janapaty, B. Bhuva, N. Bui and S. Kerns, Statistical Effects of Plasma-Etch Damage on Hot-Carrier

Degradation, Proceedings of SPIE Conference on Microelectronic Manufacturing Yield, Reliability, and Failure

Analysis, October 1997.

S. E. Kerns page 11

B. Bhuva, V. Janapaty, S. Kerns and N. Bui, Plasma-Induced Polarity Dependent Hot-Carrier Response of

CMOS Devices across a Wafer, Proceedings of the International Reliability Workshop, October 1997.

N. Akil, A. Hoffmann, J.-P. Charles, S. Kerns and D. V. Kerns, Jr., Effects of Fast Neutrons on Electrical

Parameters and Light Emission from N-Channel Silicon JFETs, Proceedings of the 2nd French-Italian

Symposium on SiO2 and Advanced Dielectrics, p. 10, June 1998.

D. V. Kerns, Jr., S. E. Kerns and R. T. Nash, Developing Engineering Leadership Through an

Undergraduate Minor in Management of Technology, Proceedings of the American Society for Engineering

Education, July 1998.

N. Akil, A. Hoffmann, J.-P. Charles, S. Kerns and D. V. Kerns, Jr., Electroluminescence Under Avalanche

in Silicon Junctions of Micro-Electronic Structure, Proceedings of the 3rd International Conference on

Electric Charge in Solid Insulators, p. 157, July 1998.

N. Akil, S. E. Kerns, D. V. Kerns, Jr., A. Hoffmann and .J.-P. Charles, Photon Generation by Silicon Diodes in

Avalanche Breakdown, Applied Physics Letters, pp. 871-872, August 1998.

P. Daniels, S. Kerns and K. Watson, Evaluating Engineering Programs Under ABET EC2000 Criteria: A

Perspective from ABET Program Visitors, Proceedings of the 1998 Frontiers in Education, p. 877,

November 1998.

K. Watson, P. Daniels and S. Kerns, Preparing Engineering Programs Under ABET EC2000 Criteria:

Recommendations for Institutions, Proceedings of the 1998 Frontiers in Education, p. 871, November

1998.

D. V. Kerns, Jr., W. P. Kang, J. L. Davidson, Q. Zhou, Y. Gurbuz and S. E. Kerns, Total-Dose Radiation-

Hard Diamond Based Hydrogen Sensor, IEEE Transactions on Nuclear Science, pp. 2799-2804,

December 1998.

V. Janapaty, M. Oner, B. Bhuva, N. Bui and S. Kerns, Effects of Die Location on Hot-Carrier Response of

Plasma-etched NMOS Devices, Electron Device Letters, pp. 455-457, December 1998.

D. V. Kerns, Jr., H. J. Barnaby and S. E. Kerns, Threshold Voltage Stabilization in Radiation Environments,

IEEE Transactions on Nuclear Science, pp. 3175-3178, December 1998.

P. Mongkolkachit, B. Bhuva, S. Prasad, N. Bui, S. Kerns, Ultra-thin Gate Oxide Degradation Under Different

Rates of Charge Injection, Proceedings of the SPIE The International Society for Optical Engineering, pp. 106-

111, 1999.

N. Akil, S. E. Kerns, D. V. Kerns, Jr., A. Hoffmann and J.-P. Charles, A Multi-Mechanism Model for Photon

Generation by Silicon Junctions in Avalanche Breakdown, IEEE Transactions on Electron Devices, pp.

1022-1028, May 1999.

M. de la Bardonnie, D. Jiang, S. E. Kerns, D. V. Kerns, Jr., P. Mialhe, J.-P. Charles and A. Hoffman, On the

aging of avalanche light emission from silicon junctions, IEEE Transactions on Electron Devices, pp. 1234-

1239, June 1999.

S. Kerns, D. Jiang, M. de la Bardonnie, F. Pelanchon, H. Barnaby, D. V. Kerns, R. D. Schrimpf, B. L. Bhuva,

P. Mialhe, A. Hoffmann and J.-P. Charles Light Emission of Total Dose and Hot Carrier Effects

on Silicon Junctions, IEEE Transactions on Nuclear Science, pp. 1804-1808, December 1999.

S. Forster, A. Hoffmann, J.-P. Charles, S. E. Kerns and D. V. Kerns Jr., Electrical and Optical Analysis of

Low Fluence Fast Neutron Damage to JFETs, IEEE Proceedings of 5th European Conference on Radiation

and Its Effects on Components and Systems on Reliability of Electron Devices, pp. 508-511, 1999.

M. N. Jaafar Ali, B. Bhuva, S. Kerns, M. Maher, R. Lawrence and A. Hoffmann, Characterization Effects of

Radiation on Forward and Reverse Saturation Characteristics of N-channel Devices, IEEE

Proceedings of 5th European Conference on Radiation and its Effects on Components and Systems on Reliability of

Electron Devices, pp. 519-523, 1999.

D. Jiang, B. L. Bhuva, D. V. Kerns, Jr., and S. E. Kerns, Comparative Analysis of Metal and Optical

Interconnect Technology, Proceedings of the IEEE International Interconnect Technology Conference, pp. 25-

27, May 2000.

A. Wisitsora-at, W. P. Kang, J. L. Davidson, D. V. Kerns and S. E. Kerns, Diamond Emitter Arrays with

Uniform Self-Aligned Gate Built from Silicon-on-Insulator Wafer, 13th International Vacuum

Microelectronics Conference, pp. 136-137, August 2000.

S. E. Kerns page 12

W. P. Kang, J. L. Davidson, A. Wisitsora-at, D. V. Kerns and S. Kerns, invited, Recent Development of

Diamond Microtip Field Emitter Cathodes and Devices, 13th International Vacuum Microelectronics

Conference, pp. 92-95, August 2000.

B. Bhuva, D. Jiang, D. Kerns, Jr. and S. Kerns, Design and Process Issues Affecting Performance of Optical

Interconnects on ICs, Proceedings of Conference on Process Integration and Device Technology, September

2000.

A. Chatterjee, B. Bhuva, D. Jiang, J. Stankus, D. Kerns, Jr. and S. Kerns, Feasibility Study for Si-based

Optical VLSI Interconnects Proceedings of SRC TechCon, September 2000.

J. K. Shreedhara, H. J. Barnaby, B. L. Bhuva, D. V. Kerns, Jr. and S. E. Kerns, Circuit Technique for

Threshold Voltage Stabilization Using Substrate Bias in Total Dose Environments, IEEE

Transactions on Nuclear Science, pp. 2557-2560, December 2000.

C. Salame, A. Hoffmann, P. Mialhe, J.-P. Charles, D. V. Kerns, Jr. and S. E. Kerns, Size Effect on SEB

Cross-Section of VDMOSFETs, Radiation Effects and Defects in Solids, pp. 191-200, 2000.

M. Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, A. Hoffmann, J.-P. Charles, S. E. Kerns and D. V. Kerns,

Jr., Analyses of Electroluminescence Spectra of Silicon Junctions in Avalanche Breakdown Using

Indirect Interband Recombination Model, Applied Physics Letters, pp. 3182-3184, 2000.

A. Wisitsora-at, W. P. Kang, J. L. Davidson, D. V. Kerns and S. E. Kerns, Diamond Emitter Arrays with

Uniform Self-Aligned Gate Built from Silicon-on-Insulator Wafer, Journal of Vacuum Science and

Technology B, pp.971-974, May/June 2001.

W. P. Kang, J. L. Davidson, A. Wisitsora-at, D .V. Kerns and S. Kerns, invited, Recent Development of

Diamond Microtip Field Emitter Cathodes and Devices, Journal of Vacuum Science and Technology B,

pp. 936-941, May/June 2001.

R. R. Whitlock, D. S. Y. Hsu, J. L. Shaw, S. E. Kerns, D. V. Kerns, Jr., W. P. Kang and J. L. Davidson,

Novel X-ray Sources and Systems Using Gated Electron Emitters, Proceedings of the SPIE The

International Society for Optical Engineering, pp. 131-135, 2002.

M. Lahbabi, A. Ahaitouf, E. Abarkan, M. Fliyou, A. Hoffmann, J.-P. Charles, B. L. Bhuva, S. E. Kerns and

D. V. Kerns, Jr., Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche

Breakdown Using Self-Absorption and Recombination Models, Applied Physics Letters, pp. 1004-

1006, 2002.

S. Sayil, D. Kerns and S. Kerns, All-Silicon Optical Contactless Testing of Integrated Circuits, International

Journal of Electronics, pp. 537-547, 2002.

D. V. Kerns, S. E. Kerns, G. A. Pratt, M. H. Somerville and J. D. Crisman, The Search for Design in

Electrical Engineering Education, Proceedings of the First IEEE International Workshop on Electronic

Design, Test and Applications, DELTA, pp. 192-196, 2002.

M. Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, S. E. Kerns and D. V.

Kerns, Jr., Analysis of Electroluminescence Spectra of Silicon and Gallium Arsenide p-n Junctions

in Avalanche Breakdown, Journal of Applied Physics, Vol. 95, No. 4, pp. 1822-1828, 2004.

M. Somerville, D. Anderson, H. Berbeco, J. R. Bourne, J. Crisman, D. Dabby, H. Donis-Keller, S. Holt, D.

V. Kerns, Jr., S. E. Kerns, R. Martello, R. K. Miller, M. Moody, G. Pratt, J. C. Pratt, C. Shea, S.

Schiffman, S. Spence, L. A. Stein, J. D. Stolk, B. D. Storey, B. Tilley, B. Vandiver and Y. Zastavker,

The Olin Curriculum: Thinking Toward the Future, IEEE Transactions on Education, Vol. 48, No. 1,

pp. 198-205, 2005.

S. Sayil, D. V. Kerns, Jr. and S. E. Kerns, A Survey of Contactless Measurement and Testing Techniques,

IEEE Potentials, pp. 25-28, February/March 2005.

S. Sayil, D. Kerns and S. Kerns, Comparison of Contactless Measurement and Testing Techniques to a New

All-silicon Optical Test and Characterization Method, IEEE Transactions on Instrumentation and

Measurement, pp. 2082-2089, 2005.

S. Kerns, Contributor to Proceedings on Improving the Technological Literacy of Undergraduates Identifying the

Research Issues, National Science Foundation Workshop held at the National Academy of Engineering,

(NAE) Washington, DC, April 18-19, 2005.

S. E. Kerns page 13

BOOKS AND BOOK CHAPTERS

Roy A. Colclaser and Sherra E. Diehl, Materials and Devices for Electrical Engineers and Physicists, McGraw-Hill,

1985.

Sherra E. Kerns, Transient-Ionization and Single-Event Phenomena, Chapter 9, pp. 485-576 in Ionizing

Radiation Effects in MOS Devices and Circuits, T.-P. Ma and P. V. Dressendorfer, eds., Wiley

Interscience, 1989.

Sherra E. Kerns, 101 Careers in Mathematics, Andrew Sterrett, ed., The Mathematical Association of America,

pp. 92-93, 1996.

Sherra E. Kerns and Karan Watson, Overcoming Resistance to Change, Chapter 7, pp. 190-209 in Designing

Better Engineering Education Through Assessment: A Practical Resource for Faculty and Department Chairs on

Using Assessment and ABET Criteria to Improve Student Learning, Joni E. Spurlin, Sarah A. Rajala, and

Jerome P. Lavelle, eds., Stylus Publishing, 2008.

BOOKS AUTHORED JOINTLY WITH OTHER MEMBERS OF THE NAVAL STUDIES BOARD

Carrier-21: Future Aircraft Carrier Technology, National Academy Press, 1991.

The Navy and Marine Corps in Regional Conflict in the 21st Century, National Academy Press, 1996.

JOURNAL SPECIAL ISSUES

Guest Editor (with K. Galloway), Proceedings of the IEEE, Special Issue on Radiation Effects on

Microelectronics, November 1988.

Guest Editor (with J. McGourty), IEEE Transactions on Education, Special Issue on Assessment, May 2000,

Vol. 43, N. 2.

SHORT COURSES AND WORKSHOPS DEVELOPED AND PRESENTED

Workshop for Programs Seeking EC2000 Accreditation in 2002, San Diego, CA, March 2001, Co-Developer

(with John Orr and David Soldan).

Workshop for Programs Seeking EC2000 Accreditation in 2001, New Orleans, LA, March 2000, Co-

Developer (with John Orr and David Soldan).

Transforming Practice: A Faculty Workshop on Criteria 2000, San Juan, PR, November 1999, Co-Developer

(with Karan Watson).

Getting Faculty Buy-In for Criteria 2000, Sandestin FL, March 1999, Co-Developer (with Karan Watson).

Workshop for Programs Seeking EC2000 Accreditation in 2000, Richmond, VA, June 1999, (The first in a

continuing series), Co-Developer (with John Orr).

Circuit and Process Design for Radiation-Hardened Integrated Circuits; Analog Devices, Limerick, Ireland,

January 3-5, 1990, Co-chair (with David Kerns), Organizer, Speaker.

Radiation Effects on Electronics: Mechanisms, Models and Hardening; IEEE 1989 Nuclear Science

Symposium, San Francisco, CA, January 15, 1990, Organizer, Sole Speaker.

Circuit and Process Design for Radiation-Hardened Integrated Circuits, 3-Day Short Course, Analog

Devices, Limerick, Ireland, January3-5, 1989 (with D. V. Kerns).

Information Reliability in Radiation Environments; 1985 IEEE Annual Conference on Nuclear and Space

Radiation Effects, Monterey, CA, July 21, 1985, Chairman, Organizer.

Microelectronics for Hostile and Extreme Conditions Workshop; IECON `84 Tokyo, Japan, October 25,

1984, Co-chairman, Organizer.

High Performance VLSI: System and Hostile Environmental Limits; Real Time Systems Symposium,

Washington, DC, December 8, 1983, Speaker.

S. E. Kerns page 14

DNA/VHSIC PROGRAM WORKSHOPS AND TUTORIALS DEVELOPED AND PRESENTED

National Semiconductor and Westinghouse, Sunnyvale, CA, August 7, 1986; Hardening CMOS IC's to

Single Events.

Honeywell, Minneapolis, MN, November 16, 1983; Performance Impact of Single Event Hardening

Techniques.

TRW and Motorola, Redondo Beach, CA, October 21, 1983; CMOS RAM Single Event Circuit Hardening

Techniques.

Hughes, Newport Beach, CA, October 20, 1983; Single Event Modeling and Testing.

Westinghouse and National Semiconductor, Baltimore, MD, September 8, 1983; CMOS RAM Hardening in

Single Event Environments.

IBM, Manassas, VA, September 7, 1983; Single Event Susceptibility of Random Logic.

DESIGN TRAINING PROGRAMS DEVELOPED AND CONDUCTED

Westinghouse, Baltimore, MD, November 2-3, 1983; CMOS RAM Cell and Combinational Logic Single

Event Susceptibility Evaluation.

IBM, Manassas, VA, September 27-28 and October 25, 1983; NMOS Single Event Susceptibility Evaluation.

SELECTED REFEREED CONFERENCE PRESENTATIONS

S. E. Diehl and L. M. Slifkin, Effects of Oscillating Dislocations on the Distribution of Solutes in AgBr,

International Conference on Defects in Insulating Crystals, October, 1977.

W. A. Kolasinski, R. Koga, J. B. Blake and S. E. Diehl, Soft Error Susceptibility of a CMOS RAM:

Dependence Upon Power Supply Voltage, IEEE Annual Conference on Nuclear and Space

Radiation Effects, July 1981, Seattle, Washington.

D. S. Gibson, R. C. Jaeger and S. E. Diehl, High Density CMOS Compatible RAM Cell with Merged JFET

Loads, Southeastcon `82, April 1982, Destin, FL.

S. E. Diehl, A. Ochoa, P. V. Dressendorfer, R. Koga and W. A. Kolasinski, Error Analysis and Prevention

of Cosmic Ion-Induced Soft Errors in Static CMOS RAMs, IEEE Annual Conference on Nuclear

and Space Radiation Effects, July 1982, Las Vegas, Nevada.

J. Andrews, J. Schroeder, B. Gingerich, W. Kolasinski, R. Koga and S. Diehl, A Single Event Soft Error

Immune CMOS RAM, IEEE Annual Conference on Nuclear and Space Radiation Effects, July

1982, Las Vegas, Nevada.

S. E. Diehl, J. E. Vinson and B. D. Shafer, Prospects for Single Event Immune VLSI Logic, IEEE Annual

Conference on Nuclear and Space Radiation Effects, July 1983, Gatlinburg, TN.

E. L. Petersen, J. B. Langworthy and S. E. Diehl, Approaches to Single Event Upset Figure of Merit, IEEE

Annual Conference on Nuclear and Space Radiation Effects, July 1983, Gatlinburg, TN.

R. C. Jaeger, R. M. Fox and S. E. Diehl, Analytical Expressions for the Critical Charge in CMOS Static RAM

Cells, IEEE Annual Conference on Nuclear and Space Radiation Effects, July 1983, Gatlinburg,

TN.

T. M. Mnich, S. E. Diehl and B. D. Shafer, Comparison of Analytical Models and Experimental Results for

Single Event Upset in CMOS SRAMS, IEEE Annual Conference on Nuclear and Space Radiation

Effects, July 1983, Gatlinburg, TN.

L. W. Massengill, S. E. Diehl, T. M. Mnich, P. V. Dressendorfer and T. F. Wrobel, Transient Radiation

Hardening of CMOS LSI and VLSI Memory Circuits, Hardened Electronics and Radiation

Technology Conference, July 1984, Ft. Collins, CO.

L. W. Massengill and S. E. Diehl, Dose-Rate Upset Simulation for Digital CMOS Circuits, IEEE Annual

Conference on Nuclear and Space Radiation Effects, July 1984, Colorado Springs, CO.

S. E. Kerns page 15

J. E. Vinson, S. E. Diehl and E. L. Petersen, An Algorithm for Predicting Single Event Upset Rates in

Complex Logic Systems, IEEE Annual Conference on Nuclear and Space Radiation Effects, July

1984, Colorado Springs, CO.

A. R. Knudson, A. B. Campbell, P. Shapiro, W. J. Stapor, E. A. Wolicki, E. L. Petersen, S. E. Diehl and P. V.

Dressendorfer, Charge Collection in Multilayer Structures, IEEE Annual Conference on Nuclear

and Space Radiation Effects, July 1984, Colorado Springs, CO.

S. E. Diehl, A New Class of Single Event Soft Errors, IEEE Annual Conference on Nuclear and Space

Radiation Effects, July 1984, Colorado Springs, CO.

L. W. Massengill and S. E. Diehl, Prediction and Optimization of Transient Radiation Soft Error

Thresholds by Computer Simulation, Government Microcircuits Applications Conference,

November 1984, Las Vegas, NV.

L. W. Massengill and S. E. Diehl, Computer Simulation of the Effects of Large Junction Leakage Currents

on Memory Retention in CMOS SRAMS, The Fourth International Conference on the Numerical

Analysis of Semiconductor Devices and Integrated Circuits, June 1985, Dublin, Ireland.

L. W. Massengill and S. E. Diehl, Voltage Span Modeling of Very Large Memory Arrays, in NASECODE

IV; The Fourth International Conference on the Numerical Analysis of Semiconductor Devices and

Integrated Circuits, June 1985, Dublin, Ireland.

J. R. Hauser, S. E. Diehl, A. R. Knudson, A. B. Campbell and W. J. Stapor, Ion Track Shunt Effects In

Multi-Junction Structures, IEEE Annual Conference on Nuclear and Space Radiation Effects, July

1985, Monterey, CA.

R. L. Johnson, S. E. Diehl and J. R. Hauser, Circuit Simulation Model for Sues in Advanced CMOS

SRAMS, IEEE Annual Conference on Nuclear and Space Radiation Effects, July 1985, Monterey,

CA.

T. R. Weatherford, J. R. Hauser and S. E. Diehl, SEU Circuit Analysis of GaAs Static RAMs, IEEE

Annual Conference on Nuclear and Space Radiation Effects, July 1985, Monterey, CA.

L. W. Massengill and S. E. Diehl, Analysis of Transient Radiation Upset in a 16K SRAM, 1985 IEEE

Annual Conference on Nuclear and Space Radiation Effects, July 1985, Monterey, CA.

A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, S. E. Diehl and J. R. Hauser, Charge Collection in

CMOS/SOS Structures, IEEE Annual Conference on Nuclear and Space Radiation Effects, July

1985, Monterey, CA.

S. E. Diehl and J. R. Hauser, Single Event Immune CMOS Static RAM Cell, 1985 Hardened Electronics

and Radiation Technology Conference, July 1985, Monterey

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