Electrical Engineer Development

Dipankar Chandra

Email: *********@********.***

Address: PO Box 941147

City: Plano

State: TX

Zip: 75094

Country: USA

Phone: 214-***-****

Skill Level: Management

Salary Range: 120

Willing to Relocate

Primary Skills/Experience:

See Resume

Educational Background:

See Resume

Job History / Details:

0.30) for deep UV LED, LD. Solar blind detector.

GaN AlGaN HEMT heterostructure with advanced process control.

High Voltage GaN HEMT for High Voltage Power Switching. AlGaN/GaN HEMT or Heterostructure Field Effect Transistor for High Frequency Application.

DRS/Finmeccanica, 1999 2011. Raytheon, 1997-1999. Texas Instruments, 1985-1997.

Application of strong reverse bias in suppressing Auger generated dark currents in novel heterojunction structure grown from Arsenic doped HgCdTe. High Operating Temperature IR Detector operation at high reverse bias.

Application of Arsenic doped HgCdTe in building Electron Avalanche Photodiode.

DRS/Finmeccanica, 1999 2011.

Dopant diffusion processes in semiconductors - Arsenic and Indium in HgCdTe - Junction Positioning in CdTe/HgCdTe Double Layer Heterojunction.

DRS/Finmeccanica, 1999 2011. Raytheon, 1997 1999. Texas Instruments, 1985 1997.

High Operating Temperature Detector Development.

Raytheon, 1997 1999.

Double Layer Heterojunction Development on CdTe-HgCdTe. Metal-Insulator-Semiconductor Device Development on HgCdTe.

Texas Instruments, Defense Systems and Electronics Group, 1985 1997.

RF MEMS, BULK ACOUSTIC WAVE DEVICES, PIEZOELECTRIC THIN FILMS, FLIR,THIN FILM GROWTH/REMOVAL BY MOCVD, PECVD, ION ASSISTED DEPOSITION, E BEAM AND ION BEAM SPUTTERING.

Relevant experience in Power Amplifiers, RF switches supporting multi-chip module design (FEM's) including filtering and matching networks. Hands on experience in laminate design, EM simulation and lab debug and tuning.Expert EDA circuit simulation skills utilizing Agilent ADS and 2.5/3D EM tools such as Momentum, IE3D or HFSS.Strong understanding of RF concepts such as impedance matching, impedance transformation, distributed systems, passive RLC and resonant circuits, noise, linearity, bandwidth and stability.Useful understanding of device, modeling and process technologies. Knowledge and understanding of RF systems and familiarity with cellular standards and test requirements. Focused RF lab skills in debug and product characterization.

Ability to take products from concept to volume production with all documentation. Communication skills both verbal and written for all levels of management reporting.

ASSESSMENT AND QUALITY CONTROL, WITH CROSS-FUNCTIONAL AND MULTI-CULTURAL TEAM LEADERSHIP.

SPC : Employed statistical process control, using statistical techniques, to measure and analyze the variation in processes. To improve the quality of the processes, in addition to just measuring, combined SPC with other techniques, such as sampling plans, experimental design, variation reduction, process capability analysis, and process improvement plans. Developed the following capabilities:

All forms of SPC control charts

Variable and attribute charts

Average (X ), Range (R), standard deviation (s), Shewhart, CuSum, combined Shewhart-CuSum, exponentially weighted moving average (EWMA)

Selection of measures for SPC

Process and machine capability analysis (Cp and Cpk)

Process characterization

Variation reduction

Experimental design

Quality problem solving

Cause and effect diagrams

Methodical Reliability Development. Designed reliability into products. Developed and performed:

Built-in test (BIT)

Failure mode and effects analysis (FMEA)

Reliability simulation modeling

Thermal analysis

Reliability Block Diagram analysis

Fault tree analysis

Root cause analysis

Sneak circuit analysis

Accelerated Testing

Reliability Growth analysis

Weibull analysis

Electromagnetic analysis

Statistical interference

Avoid Single Point of Failure

AREAS OF EXPERTISE

Technology Management/Knowledge: Computer-Aided Engineering, Experimental Engineering, Manufacturing Integration, Process Standardization, Product Development Cycle, Software Engineering. SAP ERP, SWA, ITIL. Hands on materials scientist, electrical engineer, solid state device physicist and mechanical engineer. Semiconductor device processing and manufacturing sequence. Built an advanced laboratory from grounds up. RF Mems, Bulk Acoustic Wave Devices, Piezoelectric thin films, FLIR, Thin Film Growth/Removal by MOCVD, PECVD, Ion Assisted Deposition, E Beam and Ion Beam Sputtering. Nanostructured Composites. Bulk Nanostructured Thermoelectric Materials. Application of Spinodal Decomposition. Phase Transformation and Materials Hardening by Nano-dispersion. Doping and Diffusion. Sintering and Powder Metallurgy. Effects of Doping of Ceramics, Chalcogenides, Silicides, Oxides. Thermoelectric Cooling. Deep Reactive Ion Etching (DRIE), Seal, Deposition, Patterning, Stress Measurements and Characterization, Metrology. Hyperspectral Imaging. EELS Hyperspectral Imaging. Infrared Spectroscopy. Raman Spectroscopy.Cathodoluminescence Spectroscopy. X-ray EDS. EFTEM. Photovoltaic Infrared Detectors, Avalanche Photodiodes, Vertical Cavity Surface Emitting Laser Structures, Materials, Opto-mechanical Design and Electro-Optics Systems. Discovery and Demonstration of Unique Type Reversal from Low Temperature Ion Implantation Formation of P-layer from donor implantation and N-layer from acceptor implantation. Discovery of the anomalous depth effect. Development of unique heterojunctions. CMOS ROIC Design. Defect and Dopant Diffusion. Compound Semiconductor Single Crystal Growth. Nano Wire Growth. Detector Process Engineering. Employment of Extensive and Targeted Thermoelectric Cooling for HgCdTe. Photovoltaic Device Performance Characterization at Low Temperatures. Defect Analysis. Development and Tuning of JEOL 2100F Scanning Transmission Electron Microscopy and JEOL 3010 High Resolution Transmission Electron Microscopy to sub-angstrom resolution. Vacuum System, Vacuum Chamber and Enclosure Design. Correlation of individual atomic defects with device performance. Failure Analysis, Statistical Process Control, Design of Experiments.

Pioneering Process Development, Physics and Materials Characterization: Develop a broad spectrum of non-epitaxial and epitaxial thin film growth processes, including Chemical Vapor Deposition, Metal Organic Chemical Vapor Deposition, Chemical Vapor Transport, Liquid Phase Epitaxy and Molecular Beam Epitaxy of Compound Semiconductors. Develop the epitaxial processes into manufacturing processes with product engineering, maintenance and quality management. Physics and materials characterization including FTIR and four point probe to reduce defect density and to initiate and implement process and product changes that support yield improvement. Strong use of photoluminescence, X-ray diffraction, ECV, Hall measurements, Auger, SIMS, SEM, TEM.

Business Development: Cross-Functional Team Leadership, Continuous Process Improvements, Technical Communications, Innovative Technical Procedures, Operational Management, Integrated Departmental Plans, Goals and Technical Strategies, Strategic Planning, Business Development and Capture, Project Management, Relationship Building.

PROFESSIONAL SYNOPSIS

U.S. ARMY RESEARCH LABORATORY, RDRL-WMM-G, Aberdeen Proving Ground, Maryland 21005; 2010 to present.

Hands on Manager of the Combined Electron Microscopy (200 KV TEM,300 KV STEM,SEM), FIBS and RBS Laboratory.

Development and Tuning of JEOL 2100F scanning transmission electron microscopy and JEOL 3010 high resolution transmission electron microscopy for sub-angstrom resolution. Correlation of individual atomic defects with device performance.

Thermoelectric Alloys for cooling and power generation.

Characterization and assessment, with direct hands on involvement, of the diversified materials science and physics aspects of manufacturing a diverse array of products.

Sintering and Powder Metallurgy. Tungsten and Rhenium Alloys with Zirconium dioxide precipitate strengthening.

Effects of boron doping on Tungsten Zirconium dioxide.

MOCVD Growth of GaN and HgCdTe. Process Development and Optimization, ensuring laminar flow and automated hot carrier transfer. Nanowire growth.

Photodiode Design. High Operating Temperature Infrared Photodetector based on HgCdTe. Electron Avalanche MWIR Photodetector (k=0).

GaAs-AlGaAs VCSEL (650 to 1300 nm). High Power VCSEL. GaAs and InP based devices. Demonstrated also long wavelength VCSEL, combining III-V and II-VI.

Near Infrared silicon avalanche photodetector design. HgCdTe MWIR avalanche photodiode FPA with electron injection APD (k=0).

Fiber Optic connections.

GaN/AlGaN HEMT for High Voltage power switching. AlGaN/GaN HEMT or Heterostructure Field Effect Transistor for High Frequency Application.

Nanostructured composites.

Bulk nanostructured thermoelectric systems.

Development of ultra-sensitive vapor sensors on micro-machined piezoresisitive silicon cantilevers. Discovery of the nano-sorption effect.

drs infrared technologies; RAYTHEON TI SYSTEMS; Defense Systems and Electronics Group, TEXAS INSTRUMENTS; Dallas, Texas

1985 - 2010

DRS Acquired Raytheon TI Systems in 1999. TI sold DSEG group to Raytheon in 1997.

Senior Member of Technical Staff.

Member of Technical Staff, Promoted to Senior Member of Technical Staff.

Managed with direct hands on involvement all aspects of product development from creating designs to personally building reactors. Directed and supervised 45 staff including contractors, sub-contractors, component suppliers, hardware design engineers, mechanical engineers, manufacturing and purchasing in building an advanced and unique high pressure reactor for metal saturated growth of thin films of HgCdTe. Led project teams and served as subject matter expert with materials engineering, electrical engineering, physics and handling/inventory knowledge. Performed current voltage (I-V) and capacitance voltage (C-V) analysis of device test structures. Utilized CAD/CAM, computer modeling and ADP systems during design development. Discovered new materials and hardware for new applications and penetrate new markets. Hall measurements, Lifetime determinations, SIMS, SEM, TEM, X-ray diffraction, in assessing compound semiconductor film electrical, compositional and structural quality. Gas Chromatography and HPLC in assessing the fluid characteristics for the high pressure liquid phase epitaxy process.

Successfully collaborated with senior scientist to create winning proposal for high operating temperature detectors for $60+ million dollar Department of Defense contract. This business capture proved transformational for the Company. Solely contributed to the project by developing a novel detector.

Following demonstration of high quality and high volume GaN growth by high temperature laminar flow MOCVD, demonstrated high quality and high volume growth of HgCdTe by medium temperature laminar flow MOCVD in the same apparatus.

Produced, processed and delivered 2600 units of highly specialized and complex compound semiconductor slices over 4-year time period from reactor geared towards producing only 1600 units of much simpler conventional film slices, yielding more than 1 million individual product units. Transitioned to Lean Six Sigma manufacturing.

Attained ultra low Arsenic doped HgCdTe epitaxial growth with 100 % activation with ultra low defect density, reproducibly, by developing a novel and unique method. Exceeded performance of other product in this category by 10X.

Designed pioneering passivation technology that combines with electronic material to synergistically improve device performance by 15X, by both decreasing device dark currents and enhancing tunneling breakdown voltage.

CIGS (copper indium gallium diselenide) growth for solar energy conversion. Cr doped Ge. Sb doped Si.

Eliminated void defects and formation of complexes between voids and hillocks during multicomponent compound semiconductor layer growth by MBE and MOCVD.

Obtained US and international patents with 4 additional patent applications being reviewed.

Created and built piezoresistive and piezoelectric MEMS gas sensor based on silicon and DSP for detection at sub-part per quintillion; demonstrated similarity between antibody-virus reaction and mercury vapor-gold film reaction at ultra low pressures.

Developed numerous advanced technology programs including but not limited to: Te rich infinite melt dipping epitaxial growth technology, low temperature extrinsic doping technology (both p-type and n-type), arsenic doping technology using Te rich LPE, p-type arsenic doping, unique P+ process, innovative p+/p contacts to SWIR and MWIR to eliminate substrate debiasing, high density n on p vertically integrated photodiode (HDVIP) technology materials and new type of p on n double layer heterojunction (DLHJ) technology.

Delivered more than 20K units of super-thick semiconductor slices of HgCdTe over 8-year period from 2 reactors using uniquely developed methods - these reactors were not designed for delivery of more than 1200 per year.

Received 10 outstanding achievement awards due to excellence in design and implementation for all device, materials, electrical and systems engineering and computer modeling. Promoted to Senior Member of Technical Staff.

34 patents, 312 publications.

USRA Visiting Scientist for NASA Marshall Space Flight Center and Research Fellow at Rensselaer Polytechnic Institute :

Discovered the unique negative thermal expansion coefficient of the liquid compound semimetal mercury

telluride. Developed the related inhomogeneous structure model. Computerized tomography - non-destructive failure testing and analysis of Bridgman-Stockbarger grown compound semiconductor single crystals. Kyropoulos or Czochralski growth of Silicon. Computerized Axial Tomography of bulk crystals and characterization of defects.

General Atomics, San Diego, California;

Department of Nuclear Engineering, North Carolina State University, Raleigh, North Carolina;

Brookhaven National Laboratory, Upton, Long Island, New York;

Focused experience in nuclear reactor systems, and high temperature materials. Focus on

high temperature gas cooled nuclear reactor materials,

fission product diffusion and control,

isotropic and needle coke graphite technology,

PCRV (pre-stressed concrete reactor vessel) technology,

growth and deposition of pyrolytic carbon coatings,

swelling of stainless steels from irradiation.

Hardening of stainless steels by spinodal decomposition.

EDUCATION

Doctor of Philosophy in Solid State Physics, Materials and Mechanical Engineering, Dissertation: Investigation of Spinodal Decomposition in Iron-Chromium stainless steels using Mossbauer spectroscopy

Northwestern University, Evanston, Illinois, USA

Program Management : University of Texas at Dallas, USA.

Bachelor of Technology in Electrical Engineering, Systems Engineering and Computer Science : Indian Institute of Technology, Kharagpur, India

US CITIZEN

SECURITY CLEARANCE

KNOWLEDGE OF FAR, DFARS AND ITAR.

Selected List of Recent Awards and Achievements

Nanostructured Thermoelectric Materials (Si-Ge nanocomposite) Lattice Structures by JEOL 2100F Scanning Transmission Electron Microscopy. Army Research Laboratory Report.

GaN/AlGaN High Electron Mobility Transistor; Growth by Metal Organic Chemical Vapor Deposition. Army Research Laboratory Report.

Development of doped HgCdTe for P+SWIR/MWIR/N+SWIR High Operating Temperature MWIR Detector. DRS Outstanding Achievement Award.

Double Layer P+/N- Heterojunction array Development and Transition to Six Sigma Manufacturing. Texas Instruments Outstanding Achievement Award.

Low Temperature Fluorine Implanted P+/P- Implant Contact Process Development.

Texas Instruments Outstanding Achievement Award.

Multi-Layer CdTe-Cd-ZnS Interdiffused Passivation with Ultra Low Surface Charge Density. Raytheon Outstanding Team Achievement Award.

Fuel Ignition under Forced Convection. Army Research Laboratory Report.

Selected List of Recent Publications.

Junction Stability in Ion-Implanted Mercury Cadmium Telluride; Dipankar Chandra, H.F. Schaake, and M.A. Kinch, J. Electron. Mater. 37, 1329 (2008).

Growth of Very Low Arsenic-Doped HgCdTe for P+//N+ High Operating Temperature MWIR Detector; Dipankar Chandra, D.F. Weirauch, H.F. Schaake, M.A. Kinch, F. Aqariden, C.F. Wan, and H.D. Shih, J. Electron. Mater. 34, 963 (2005).

Activation of Arsenic as an Acceptor in Mercury Cadmium Telluride under Equilibrium Conditions; Dipankar Chandra, H.F. Schaake, M.A. Kinch, F. Aqariden, C.F. Wan, D.F. Weirauch, and H.D. Shih, J. Electron. Mater. 31, 715 (2002).

High-Operating-Temperature MWIR Detector Diodes; H.F. Schaake, M.A. Kinch, Dipankar Chandra, F. Aqariden, P.K. Liao, D.F. Weirauch, C.F. Wan, R.E. Scritchfield, W.W. Sullivan, J.T. Teherani, and H.D. Shih, J. Electron. Mater. 37, 1401 (2008).

Deactivation of Arsenic as an Acceptor by Ion Implantation and Reactivation by Low-Temperature Anneal; Dipankar Chandra, H.F. Schaake, M.A. Kinch, P.D. Dreiske, T. Teherani, F. Aqariden, D.F. Weirauch, and H.D. Shih; J. Electron. Mater. 34, 864 (2005).

Defect Etching and n-p junction placement in Ion-Implanted Arsenic Doped high density vertically integrated HgCdTe Photodiodes; Dipankar Chandra, H.F. Schaake, and M.A. Kinch, J. Electron. Mater. 32, 810 (2003).

Vacancies in HgCdTe as electrically active stoichiometric defects; Dipankar Chandra, H.F. Schaake, J.H. Tregilgas, F. Aqariden, M.A. Kinch, and A.J. Syllaios, J. Electron. Mater. 29, 729 (2000).

Best Paper award: Formation and Control of Defects During MBE and MOCVD Growth of HgCdTe; Dipankar Chandra, H.D. Shih, F. Aqariden, R. Dat, S. Gutzler, M.J. Bevan, and T. Orent, J. Electron. Mater. 27, 640 (1998).

Isolation and Control of Voids and Void-hillocks during MBE and MOCVD Growth of HgCdTe; Dipankar Chandra, F. Aqariden, J. Frazier, S. Gutzler, T. Orent, and H.D. Shih; J. Electron. Mater. 29, 887 (2000).

Best Paper award: Variation of Arsenic Diffusion Coefficients in HgCdTe Alloys with Temperature and Hg Pressure: Tuning of p on n Double Layer Heterojunction Diode Properties; Dipankar Chandra, M.W. Goodwin, M.C. Chen, and L.K. Magel; J. Electron. Mater. 24, 5 (1995).

MEMS Sensor on Bulk Micromachined Piezoresistive Silicon

Single Atom Detection and Attainment of sub part per quintillion sensitivity from a novel transformation of a piezoresistive functionalized solid microsurface at ultralow vapor concentrations; Dipankar Chandra; submitted to Nature.

The Initial Rate of Vapor-Solid Interaction and its Application in the Detection of Vapor at Ultra Low Concentrations; Dipankar Chandra, Jack R. Frazier, Jill Ringo, and Carlos E. Aramayo; J. Appl. Phys. 97, 123517 (2005).

Single Atom Detection and Nanosorption from a Novel Transformation of a Piezoresistive Functionalized Solid Microsurface at UltraLow Vapor Concentrations Similarity to Antibody-Virus Interactions; Dipankar Chandra;

submitted to Nature.

ANOMALOUS VOLUME EXPANSION

Anomalous Volume Expansion in Tellurium Based Systems; Dipankar Chandra and Lawrence Rozier Holland, J. Vac. Sci. Technol. A1, 1620 (1983).

Anomalous Volume Expansion in Hg1-xCdxTe melts: An analysis employing the inhomogeneous structure model; Dipankar Chandra, Physical Review B, 31, 7206 (1985).

Graphite, Ceramics and Refractory Metals

Tritium Diffusion through Oxide Surface Films on Niobium; Dipankar Chandra, T.S. Elleman, and K. Verghese;

Journal of Nuclear Materials; 59, 263 (1976).

Diffusion of Cesium through Graphite; Dipankar Chandra and John H. Norman; Journal of Nuclear Materials; 62, 293 (1976).

Tritium Diffusion in Alumina (Al2O3) and Beryllia (BeO); J.D. Fowler, Dipankar Chandra, T.S. Elleman, A.W. Payne, Kuruvilla Verghese; Journal of the American Ceramic Society; 60, 155 (1977).

Tritium Diffusion in Ceramic Materials for Thermonuclear Reactors; Dipankar Chandra, J.D. Fowler, R.A. Causey, T.S. Elleman, and K. Verghese; Journal of Vacuum Science and Technology, 13, 401 (1976).

Selected Recent Patents

U.S. Patent Number 6,866,819; A sensor for detecting a target matter, which includes a chemical sensitive layer that is operable to react when exposed to the target matter.

U.S. Patent Number 6,140,145; This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry.

U.S. Patent Number 6,036,770; Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner.

U.S. Patent Number 5,861,626; A multiple film integrated infrared (IR) detector assembly consists ofdetector films having different IR spectral sensitivities.

U.S. Patent Number 5,079,192; The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations.

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