Electrical Engineering Engineer

Abdel-Rahman A. El-Emawy, Ph. D.

University of New Mexico, Center for High Technology Materials,

Mailing Address: 6716 Beck NE, Albuquerque NM 87109

Home: 505-***-**** Cell : 505-***-**** Email: *****@****.***.***

Research and Teaching Interests

Design and fabrication of VLSI. Analysis and desigen of digital and analog circuits.

Development of MOCVD- and MBE-growth methodologies and charactrizations.

Crystal growth and characterization of novel materials for electronic and optoelectronic

devices, quantum well and quantum dot lasers (VCSELs) and mid-infrared emitters and

detectors. Processing of optoelectronic materials and devices. Research on laser physics

and applications. Mass Spectrometry Analysis. Development of spin polarized injection

and transport in semiconductor materials. Teaching electronics, analog and digital

circuits, optoelectronics, and laser courses for undergraduate and graduate students.

Education

1996 Ph. D. Electrical Engineering, (Optoelectronics)

(Colorado State University, Fort Collins, Colorado)

1986 M. Sc. Electrical Engineering, (Solid State Electronics)

(Ain Shams University, Cairo, Egypt)

1977 B. Sc. Electrical Engineering, (Avionics)

(Engineering College, Cairo, Egypt)

Positions

2003-Present Research Associate Professor, Center for High Technology Materials,

University of New Mexico, Albuquerque, New Mexico.

2000-2003 Crystal Growth Facility Manager, Center for High Technology

Materials, University of New Mexico, Albuquerque, New Mexico.

1996-2000 Avionics Department Head, Research Scientist, Air Force Research and

Development Department, Cairo, Egypt.

1996-2000 Visiting Lecturer, Department of Electrical Engineering,

Military Technical College, Ain Shams University, Cairo, Egypt.

1996-2000 Consultant/Collaborator with research Groups at: Ain Shams University,

Military Technical College and National Institute For Laser Science,

Cairo, Egypt.

1992-1996 Research Assistant, Department of Electrical Engineering,

Colorado State University, Fort Collins, Colorado.

1990-1992 Electronics Engineer, Army Research Center, Egypt.

1977-1990 C-13 and F-16 Avionics and Simulators Engineer, Air Force, Egypt.

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Experiences

Crystal growth of Si, III-V s, and II-VI s semiconductors, using MOCVD and MBE.

Modeling and building of Crystal Growth Machines (MBE and MOCVD).

Processing of electronic and optoelectronic devices and systems.

Management of electronics and infrared R&D projects for aircraft armament

systems.

Research on establishment of CMOS VLSI fabrication project

Modification and programming of C130-aircraft radar system and F-16 simulator.

Design and building of multi-layered PCB-laboratory (OR-CAD & P-CAD).

Reverse engineering design of aircraft guidance and control systems.

Membership of developing air-traffic control, navigation systems, and simulators.

Committee member in the Egyptian satellite and high power lasers programs.

Visibility studies for early warning, guidance, and air traffic control systems.

Consultant for mine detection national project by APR (air craft penetration radar)

Participating in negotiating national and international agreements and contracts.

Courses Taught

Laser Physics. Design and Fabrications of VLSI.

Crystal Growth Techniques. Physics of Semiconductor Lasers.

Electrical Engineering Fundamentals. Optical Electronics.

Analysis and Design of Linear Circuits. Semiconductor Technologies.

Electronic circuit analysis and design. Photonics and Laser Safety.

Physics of Semiconductor Devices. RF Power Systems.

Electronics Refresher. Analog Electronics.

Fundamentals of Logic Design. Aircraft Avionics and Simulators.

References

Prof. Steve Brueck, Prof. Thomas Sigmon,

Director of CHTM Endowed Chair,

University of New Mexico, University of New Mexico, CHTM,

1313 Goddard SE, Albuquerque, NM 1313 Goddard SE, Albuquerque, NM

87106. 87106.

Ph:505-***-****, Fax: 505-***-**** Ph: 505-***-****, Fax: 505-***-****

Email: ******@****.***.*** Email: ******@****.***.***

Prof. Luke Lester,

Prof. Kevin Malloy,

Associate Director of CHTM

Associate Dean, School of Engineering,

University of New Mexico, CHTM,

University of New Mexico,

1313 Goddard SE, Albuquerque, NM

Albuquerque, NM 87106.

87106.

Ph: 505-***-****, Fax: 505-***-****

Ph: 505-***-****, Fax: 505-***-****

Email: ******@****.***.***

Email: ****@****.***.***

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Activities

1. Proposal reviewer for the United States Civilian Research & development Foundation

for the Independent States of the Former Soviet Union

2. Member in Material Research Society (MRS)

3. Member in American Chemical Society

Publications

1. A.A.El-Emawy, M. El-Koosy, H. Fekry, and A. Zekry Properties of Diffused

Resistors in Solar-Grade Semicrystalline Silicon, Solid State Electronics, 31, No.7,

1179-1185, 1988.

2. A.A.El-Emawy, Qiu, Y., Osinsky, A., Littlefield, E., and Temkin, H., A Novel

Technique for P-type Doping of ZnSe Appl. Phys. Lett. 67(9), 1238-1240, 1995.

3. Qiu Y., A. Osinsky, A.A.El-Emawy, E. Littlefield, and Temkin, H., Growth Modes

of ZnSe on GaAs, J. Appl. Phy. 79 (2), 1164-1166, 1996.

4. Qiu Y., A.A.El-Emawy, A. Osinsky, E. Littlefield, and Temkin H., Se Species in

Metalorganic Molecular Beam Epitaxy of ZnSe, Appl. Phy. Lett. 68 (23), 3311-3313,

1996.

5. A. A. El-Emawy, H.-J Cao, E. Zhmayev, J.-H. Lee, D. Zubia, AND M. Osinski,

MOCVD Growth of InNxAs1-x on GaAs Using Dimethylhydrazine Physica Status

Solidi (b) 228, No. 1, 263-267, 2001.

6. A. A. El-Emawy, S. Birudavolu, P.S. Wong, Y. B. Jiang, H. Xu, S. Huang, and

D.L. Huffaker Formation Trends in Quantum Dot Growth using Metalorganic

Chemical Vapor Deposition . Journal of Applied Physics, (93), No. 6, 3529-3534, 15

March2003.

7. A. A. El-Emawy, Hongjun Cao, Noppadon Nuntawong, and Marek

Osinski MOCVD Growth and Characterization of GaInNAs/GaAs Quantum well

Structures Journal of Materials Research, 2003.

8. A. A. El-Emawy, Noppadon Nuntawong, Hongjun Cao, and Marek

Osinsk MOCVD Growth and Characterization of InNAs/GaAs Quantum well

structures Journal of Materials Research, 2003.

9. A. A. El-Emawy, S. Birudavolu, P.S. Wong, Y. B. Jiang, H. Xu, S. Huang, and

D.L. Huffaker Selective surface migration for Defect-free Quantum Dot Ensembles

using Metalorganic Chemical Vapor Deposition . Journal of Crystal Growth

255(2003)213-219.

10. A. A. El-Emawy, Noppadon Nuntawong, Hongjun Cao, and Marek

Osinsk Optical and Structural properties of MOCVD Growth of GaInNAs/GaAs

Quantum well structures submitted to Journal of crystal growth.

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Conferences

1. A. A. El-Emawy, Qiu Y., Osinsky A., Littlefield E., and Temkin, H., A Novel

Technique for P-type Doping of ZnSe Electronic Material Conference, 1995.

2. Osinsky A, Qiu Y., A. A. El-Emawy, A.A., Littlefield, E., and Temkin, H., Growth

Modes of ZnSe on GaAs Electronic Material Conference, 1995.

3. D. Ramirez, T.L. Arviso-Jeans, E. Zhmayev, A. Lopez, C. Sinsabaugh, J.

Yellowhair, J. Lee, P. Varangis, A. A. El-Emawy, M. Osinski, "Selective

InGaAs/GaAs Quantum Well Intermixing Using SiO2 and MgF2 Capping,"

ACE/PUSUE Joint Student Conference (UNM), 2001.

4. A. A. El-Emawy, H.-J Cao, E. Zhmayev, J.-H. Lee, D. Zubia, and M. Osinski,

MOCVD Growth of InNxAs1-x on GaAs Using Dimethylhydrazine Boster in Material

Research Sociaty Conference, Denver, USA, 2001.

5. Y.-R. Zhao, J. Yellowhair, J.-H. Lee, S. Zhang, A. K. Raub, R.-H. Wang, P. M.

Varangis, A.A. El-Emawy, M. F. Vilela, and M. Osinski, Selective intermixing of

InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps, Design,

Fabrication, and Characterization of Photonic Devices II, Singapore, 26-30 Nov. 2001,

Proc. SPIE, Vol. 4594, pp. 144-155 (conf. proc. paper).

6.Hongjun Cao, Noppadon Nuntawong, A. A. El-Emawy, and Marek Osi ski

Characterization of MOCVD-grown InNAs/GaAs quantum wells CLEO2002

7. D. L. Huffaker, A. A. El-Emawy, S. Birudavolu, P. S. Wong, H. Xu, A. Uhkanov,

and K. J. Malloy MOCVD-Grown Quantum Dots for Long-Wave on GaAs

Applications Long wave on GaAs workshop, Napa Valley, CA, June 4-5, 2002.

8. Noppadon Nuntawong, Hongjun Cao,, A. A. El-Emawy, and Marek Osi ski

MOCVD-growth and Characterization of InNAs/GaAs quantum wells on GaAs

Substrates Long wave on GaAs workshop, Napa Valley, CA, June 4-5, 2002.

9. D. L. Huffaker, S. Birudavolu and A. A. El-Emawy Structural and optical

chartacteristics of MOCVD-grown Quantum dots 10th Int. Symp. Nanostructure:

Physics and Technology . St. Petersburg, Russia, June 17-21, 2002.

10. A. A. El-Emawy, D.L. Huffaker, A. L. Gray*, G. Donati and K.J. Malloy

Characterization of InAs Surface Quantum Dots Grown on GaAs by Metalorganic

Chemical Vapor Deposition Electronic Materials Conference, UCSB,2002.

11. A. A. El-Emawy, Noppadon Nuntawong, Hongjun Cao, and Marek Osinsk

MOCVD GROWTH AND CHARACTERIZATION OF InNAs/GaAs QUANTUM

WELLS MRS 2002, Boston.

12. A. A. El-Emawy, Hongjun Cao, Noppadon Nuntawong, and Marek Osinski

MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum

Well Structures, MRS, 2002, Boston.

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13. D.L. Huffaker A. A. El-Emawy, S. Birudavolu, P.S. Wong, H. Xu, A. Ukhanov,

and K.J.Malloy. Electroluminesence and Materials Characterization of InAs/GaAs

Quantum Dots Grown by Metalorganic Chemical Vapor Deposition 2002 LEOS

Annual Meeting, Gassgow, Scotland.

14. Marek Osinsk, A. A. El-Emawy, Noppadon Nuntawong, and Hongjun Cao

MOCVD GROWTH AND CHARACTERIZATION OF InNAs on GaAs-A New

Narrow-Gap Semiconductor Invited paper, 202 nd meeting, Elector Chemical Socity,

Salt lake City, Oct 20-24 (2002).

15. D. L. Huffaker, A. R. El-Emawy, S. Birudavolu, P. S. Wang, A. Ukhanov, K. J.

Malloy, MOCVD-grown quantum dots invited paper, APOC, 13-18 Oct 2002,

Shanghai, China [4905-36].

Marek Osi ski, Noppadon Nuntawong, Hongjun Cao, and A. A. El-

16.

Emawy, InNAs/GaAs Quantum Well for mid-IR applications, Optoelectronic and

Microelectronic Materials and Devices, Sydney, Australia, 11-13 December 2002

17. S. Birudavolu, A. A. El-Emawy, S. Huang, H. Xu, P. S. Wang, Y. C. Xin and D. L.

Huffaker, Selective Surface Migration for Defect-Free InAs Quantum Dot Ensembles

Using MOCVD Poster in MRS2003, Ca 2003.

18. Noppadon Nuntawong, Hongjun Cao A. A. El-Emawy, Marek Osinsk,, Effects of

MOCVD Growth Conditions on Properties of GaInNAs/GaAs Quantum Wells

Electronic Material Conference, 2003. University of Utah, Salt Lake City

19. A. A. El-Emawy, Noppadon Nuntawong, Hongjun Cao,, and Marek Osinski

Optical and Structural Properties of GaInNAs/GaAs Quantum Wells Grown by

MOCVD . The Fifteenth American Conference on Crystal Growth and Eptaxy,

Keystone, Colorado, 2003.

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