YUNSEN WANG
San Jose, CA
Phone: 408-***-**** (cell); 408-***-**** (home)
Email: abm7od@r.postjobfree.com
OBJECTIVE: A senior position in full/semi custom IC design.
STRENGTH & ACCOMPLISHMENT:
With many year experience in full/semi custom design, I have fully
explored every step of the design process from data sheet
specification, logic and circuit simulation, physical verification,
post layout back-annotation & simulation to chip debugging, which
is resulted many very successful products in IDT (Integrated
Circuit Technology). I can work on any of these design steps or
work on whole chip level design. I am committed to working in a
team environment with the ability to contribute my expertise and
follow leadership directives at appropriate times. I am faster in
learning new tools and employing new design methods in projects, to
improve efficiency and accuracy.
Having served many years in the employ of IDT, I have built-up
serial Dual-Port SRAM (DP-SRAM) products, which range from 5.0v,
3.3v, 2.5v and 1.8v, and from 0.5? down to 0.11? processes, with
particular on 5.0v and 3.3v products which have a full set of DP-
SRAM devices from 1MB density to 64KB density, with IO
(Input/Output) bus width of 18, 16, 9 and 8 bits. Most of these are
still being manufactured in IDT Fabrications.
EXPERIENCE:
7/93-03/09 Principal Design Engineer, IDT, San Jose, CA
SMP (Specialty Memory Product) of FCM (Flow Control Management)
Division
A list of a few projects in IDT
Project: IDT70v27 family - 512KB Asynchronous & Synchronous High-Speed
Dual Port-SRAM. There are 3.3v and 1.8v options with voltage
converter and bandgap regulator on the chip.
Responsibility: As the project design lead, responsible for project
schedule report and the top level floor-plan & wire-plan, logic and
time circuit simulation, AC & DC parameters check, chip level
layout supervision, and physical verification (DRC/LVS). During the
design phase, need checking time parameter margin, signal integrity
and reliability, electro migration effects, signal noise and power
consumption. Also involve chip debugging stage if needed. There is
a patent submitted on this project which I am the primary
applicant.
Project: IDT70v257family - 128KB Asynchronous Low-Power Dual Port-SRAM.
This is our first generation low power DP-SRAM, which target to the
high-end handset cell phone market. This is the highest volume low-
power device sold in the DP-SRAM production line.
Responsibility: As the project design lead, responsible for the
project schedule maintain, top level floor-plan, logic
verification, circuit simulation, and layout supervision, handling
final stage tape-out flow. The biggest issue for this design is
lower power consumption and meets the time specification. During
the design, need checking input and output signal routing and IR
drops, power analysis block by block, signal noise and time
parameter margin checking. Also need consider IDT fab process
sensibility and yield improving, as well as document preparation
for production and chip debugging. There is a patent submitted on
this project which I am the primary applicant.
Project: IDT7028 family - 1MB Asynchronous & Synchronous High-Speed Dual
Port-SRAM. There are 5v and 3.3v, and 64Kx18, 64Kx16, 128Kx9,
128Kx8 option included in this design (a total 32 products use this
design).
Responsibility: As the project design lead, responsible for the
project schedule report and maintain, chip level floor-plan & wire-
plan, logic and circuit simulation, AC & DC time parameter
simulation, power analysis and signal noise analysis, layout
supervision, physical verification, running tape-out flow, as well
as design document preparation for production. Also involve chip
production stage debugging.
Project: IDT70p269 - 256KB Asynchronous Low-Power Dual Port-SRAM. This is
our 2nd generation low-power DP-SRAM device included the power
management concept and the address and IO bus muxed mode.
Responsibility: Perform formal verification with Verilog simulation,
generate randomized logic vectors for simulation with
SystemVerilog, and write the behavior model for the device to our
customers. Handle the chip tape-out flow in the final stage
included DRC and LVS clean up.
Project: IDT70p9267 - 256KB Synchronous Low-Power Dual Port-SRAM. This
is 1.8v low power technology with address and IO bus muxed mode
option.
Responsibility: Perform the chip level floor-planning and AC and DC
time simulation for the memory core section, full chip layout
supervision and final stage verification, full chip back-
annotation/simulation and tape-out flaw handling.
Project: IDT77V500 SWITCHSTAR (Switching Memory).
Responsibility: Responsible for whole chip Place and Route using HLDS
(High Level Design Systems) (floorplan), AutoCells (cell Route) and
MicroRoute (block route).
SOFTWARE SKILLS:
Design tools: SystemVerilog, Verilog, Cadence's Skill, Hercules,
Diva, Dracula, Opus, Hspice, Star-Sim, Star-RC,
Nanosim, TimeMill, PathMill, View Logic.
Programming Languages: C, and C Script, Visual Basic, Visual C++
EDUCATION: M. S. in EE at New Jersey Institute of Technology, Newark, NJ
REFERENCE: Available upon request