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Process Development

Location:
Phoenix, AZ, 85021
Posted:
August 01, 2010

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Resume:

Michael A. Todd

*** **** ***** ***** ? Phoenix, AZ 85021 ? 602-***-****

abl6pm@r.postjobfree.com

SUMMARY OF INTELLECTUAL PROPERTY EXPERIENCE

. Registered to practice law before the USPTO as a patent agent in

October 2009 (Registration Number 65340)

Patent Drafting / Technical Writing

. Twelve provisional patent applications drafted as an independent

inventor

. Assisted in the prosecution and drafting of ten original patent

applications as a sole proprietor and an employee of ASMI (Claim

Development, Review and Modification)

. Over forty invention disclosures related to chemistry, materials,

processes, devices and hardware drafted as an employee of ATMI,

Conexant Systems and ASMI

. Four funding grant proposals drafted as an employee of ATMI

. Sixteen technical publications drafted as a graduate researcher and

professional scientist

. Over fifty detailed technical reports related to chemistry,

materials, processes and hardware drafted as a professional

scientist throughout my career

Patent Prosecution Experience

. Review and analysis of Office Actions related to pending patent

applications

. Formulation and drafting of responses to Office Actions related to

pending patent applications

. Drafting responses to 35 U.S.C. 102 and 103 rejections

. Amendment of claims

Prior / Related Art Searching and Analysis - Due Diligence

. Chemistry, Materials, Processes, Devices, Apparatus and Hardware

EDUCATION and PROFESSIONAL AWARDS

* Ph.D. Chemistry, Arizona State University, August 1996

* B.S. Physics, Arizona State University, May 1991

* Shell Corporation Graduate Fellowship Award

* NATO ASI Award and International Conference Attendee

* Several FIRST Awards for outstanding job performance from Conexant

Systems

WORK EXPERIENCE AND SELECTED PROFESSIONAL ACHIEVEMENTS

Independent Contractor (Registered Patent Agent) present

. Due diligence / patentability assessments (related art searching)

for Todd Westersund of ASM America

. Prosecution of my own patent related to low temperature Selective

Epitaxial Growth (SEG)

. Prosecution assistance of pending patent applications for Judith

Shelling and related art searching (Symbus Law)

Innovative Process Technology, LLC Phoenix, AZ

2005 - 2008

Sole Proprietor

Formed the company and applied insight and experience to identify market

opportunities related to the semiconductor manufacturing industry. Invented

and prepared provisional patent applications for chemical precursors and

processes for the target markets, developed marketing materials and

presented them to prospective customers. Conducted patentability searches

and assisted in the preparation of regular patent applications.

ASM International Phoenix, AZ

2000 - 2005

Director, Chemical Technology

Member of Front End Senior Staff reporting to the Chief Operating Officer

of ASM International, Front End Operations. Management and oversight of

projects from conception to commercialization with responsibility for

budget development and oversight, process research, development,

qualification and documentation, product definition and marketing and

customer process demonstrations and documentation. Collaborated with

internal Department Managers to commercialize new technologies.

? Invented Silcore ; led the design and development of ASM

International's Silcore product

? Key contributor to the development and implementation of the

intellectual property protection strategy for Silcore

? Actively involved in invention disclosure and patent drafting

and patent application prosecution for

numerous patents related to Silcore and numerous materials and

processes

Innovative Precursor Technology, LLC Phoenix, AZ

1999 - 2000

Sole Proprietor

Formed the company and applied insight and experience to identify market

opportunities related to low-k dielectric materials and processes to

produce them. Invented and patented chemical precursors for the target

market, developed marketing materials related to them and presented them to

prospective customers.

? Negotiated licensing of patents

Rockwell Semiconductor / Conexant Systems Newport Beach, CA

1998 - 1999

Staff Process Development Engineer

Responsible for the introduction of internal low temperature epitaxial

processes to Rockwell Semiconductor / Conexant Systems. Central figure in

the selection of the process tool and the metrology tools related to

process development and monitoring. Directly accountable for process module

development, documentation and qualification. Collaborated with vendors and

fellow engineers to achieve an integrated process module suitable for high

volume device manufacturing.

Advanced Technology Materials Danbury, CT

1996 - 1998

Senior Research Chemist

Directly responsible for the design, synthesis, characterization and

testing of numerous antimony chemicals for ion implant and CVD

applications. Documented the results of research and development activities

to aid preparation of marketing materials and to communicate those results

broadly at technical conferences.

? Prepared funding grant proposals and invention disclosure documents

Appendix I: List of Awarded Patents (as an Inventor)

Patent Number Title

US 5, 606, 056 Carbon nitride and its synthesis

US 6, 001, 172 Apparatus and method for the in-situ generation of dopants

US 6, 005, 127 Antimony / Lewis base adducts for Sb-ion implantation and

formation of antimonide thin films

US 6, 146, 608 Stable hydride source compositions for manufacture of

semiconductor devices and structures

US 6, 319, 565 Stable hydride source compositions for manufacture of

semiconductor devices and structures

US 6, 767, 830 Br2SbCH3 a solid source ion implant and CVD precursor

US 6, 458, 718 Fluorine-containing materials and processes

US 6, 630, 413 CVD syntheses of silicon nitride materials

US 6, 716, 713 Dopant precursors and ion implantation processes

US 6, 716, 751 Dopant precursors and processes

US 6, 733, 830 Processes for depositing low dielectric constant materials

US 6, 743, 738 Dopant precursors and processes

US 6, 818, 570 Method of forming silicon-containing insulation film

having low dielectric constant and high mechanical strength

US 6, 821, 825 Process for deposition of semiconductor films

US 6, 825, 130 CVD of porous dielectric materials

US 6, 858, 196 Method and apparatus for chemical synthesis

US 6, 900, 115 Deposition over mixed substrates

US 6, 905, 981 Low-k dielectric materials and processes

US 6, 958, 253 Process for deposition of semiconductor films

US 6, 962, 859 Thin films and methods of making them

US 7, 005, 160 Methods of depositing polycrystalline films with

engineered grain structures

US 7, 026, 219 Integration of high k gate dielectrics

US 7, 029, 995 Methods for depositing amorphous materials and using them

as templates for epitaxial films by solid phase epitaxy

US 7, 144, 620 Process for depositing low dielectric constant materials

US 7, 186, 582 Process for deposition of semiconductor films

US 7, 186, 630 Deposition of amorphous silicon-containing films

US 7, 253, 084 Deposition from liquid sources

US 7, 273, 799 Deposition over mixed substrates

US 7, 285, 500 Thin films and methods of making them

US 7, 294, 582 Low temperature silicon compound deposition

US 7, 297, 641 Method to form ultra high quality silicon containing

compound layers

US 7, 425, 350 Apparatus, precursors and deposition methods for silicon-

containing materials

US 7, 544, 827 Process for depositing low dielectric constant materials

US 7, 547, 615 Deposition over mixed substrates using trisilane

US 7, 585, 752 Process for deposition of semiconductor films

Appendix II: List of Technical Publications (as an author)

"Novel synthetic routes to carbon-nitrogen films," J. Kouvetakis, A.

Bandari, M. Todd and B. Wilkens. Chem. Mat. 6(6), 811, 1994.

"Synthetic routes to carbon-nitride," M. Todd, J. Kouvetakis, T. Groy and

N. Cave. Chem. Mat. 7, 5103, 1995.

"Novel chemical routes to silicon-germanium-carbon materials," J.

Kouvetakis, M. Todd, D. Chandrasekhar and D.J. Smith. Appl. Phys. Lett.

65(23), 1994.

"Growth of heteroepitaxial Si1-x-yGexCy alloys using novel deposition

chemistry," M. Todd, P. Matsunaga, J. Kouvetakis, D. Chandrasekhar and D.J.

Smith. Appl. Phys. Lett. 67(9), 1, 1995.

"Influence of precursor chemistry on synthesis of silicon-carbon-germanium

alloys," M. Todd, J. Kouvetakis, P. Matsunaga, D. Chandrasekhar and D.J.

Smith. Mat. Res. Soc. Symp. Proc. 388, 322, 1995.

"Synthesis and characterization of heteroepitaxial diamond structured Ge1-

xCx alloys (x = 1.5 - 5.0 %) using chemical vapor deposition," M. Todd, J.

Kouvetakis and D.J. Smith. Appl. Phys. Lett. 68(17), 2407, 1996.

"Chemical synthesis of metastable germanium carbon alloys grown

heteroepitaxially on (100) Si," M. Todd, J. McMurran, D.J. Smith and J.

Kouvetakis. Chem. Mat. 8(10), 2491, 1996.

"Low temperature inorganic chemical vapor deposition of heteroepitaxial

GaN," J. McMurran, M. Todd, J. Kouvetakis and D.J. Smith. Appl. Phys. Lett.

69(2), 203, 1996.

"New silicon carbon materials incorporating Si4C building blocks," D.

Chandrasekhar, J. Kouvetakis, J. McMurran, M. Todd and D.J. Smith. Mat.

Res. Soc. Symp. Proc. 441, 723, 1997.

"Growth and characterization of highly concentrated Si1-xCx systems," D.

Chandrasekhar, D.J. Smith, J. Kouvetakis, J. McMurran and M. Todd. Appl.

Phys. Lett.

"Synthesis and stabilization of stibine for low temperature chemical vapor

deposition of carbon-free antimony films," M.A. Todd, G. Bandari and T.H.

Baum. Chem. Mat. 11(3), 547, 1999.

"Structural properties of heteroepitaxial germanium carbon alloys grown on

Si (100)," D.J. Smith, M. Todd, J. McMurran and J. Kouvetakis. Phil. Mag.

A, 81(6), 1613, 2001.

"Room temperature magnetoresistive response in CMR Perovskite manganite

thin films," M.A. Todd, Charles Seegel and T.H. Baum. Mat. Res. Soc. Symp.

Proc. (~Jan 1998).

"Novel antimony precursors for low temperature CVD of antimonide thin

films," M.A. Todd, G. Bandari and T.H. Baum. Mat. Res. Soc. Symp. Proc. (~

Jan 1998)

"Deposition of Si1-xGex films for gate electrode applications using a novel

approach," M. Todd, et al., ICSI3 The SiGe conference proceedings, Santa

Fe, NM March 2003.

"Low temperature, high growth rate epitaxial silicon and silicon germanium

alloy films," M. Todd and Keith D. Weeks. Appl. Surf. Sci. 224, 2004

(Proceedings from ISTDM 2003, Nagoya, Japan).



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