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Design Assistant

Location:
Folsom, CA, 95630
Posted:
July 31, 2010

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Resume:

ABHIJIT SIL

**** ********** ****, ********* **********, Apt # 3021, Folsom, CA-95630

Mobile - 337-***-**** Email : **************@*****.***

Education:

Doctor of Philosophy in Computer Engineering

Fall 2010(expected)

The Center for Advanced Computer Studies (CACS),

GPA - 3.888

University of Louisiana at Lafayette

Master of Science in Computer Engineering

Fall 2007

The Center for Advanced Computer Studies (CACS),

GPA - 3.857

University of Louisiana at Lafayette

Master of Science in Electrical Engineering

Summer 2005

Minnesota State University, Mankato

GPA - 3.91

Bachelor of Engineering in Electronics & Communication

2002

Visvesvaraya Technological University, India

GPA - 3.12

Software Exposure:

Operating System: Windows 2000/XP, Linux, Sun Solaris

Programming Languages: C, C++, Java

HDL's: Verilog, VHDL

Scripting Language: Tcl, Perl

EDATools: HSpice, Spectre, Nanosim, Model-Sim, Design Vision, Design

Compiler, Prime Time, Encounter, Calibre, Star-RCXT, Cadence Virtuoso,

Magic, Tsuprem.4, Lasi7.0, Multisim,

Software Package: MatLab

FPGA Tools: Altera MAX PLUS II, Xilinx ISE

Work Experience:

1. Project Trainee at Defense Research & Development Organization (DRDO),

Bangalore, India in the field of Digital Signal Processing. Feb 2002 -

July 2002

2. Graduate Teaching Assistant, Electrical & Computer Engineering Dept,

Minnesota State University, Mankato.

. Lab instructor for IC Fabrication Lab - Fall 2004

. Lab instructor for Solid State Lab- - Fall 2004

. Lab instructor for VLSI Design Lab - Spring 2005

3. Graduate Teaching Assistant, The Center For Advanced Computer Studies,

University of Louisiana, Lafayette.

Teaching assistant for VLSI Design and VLSI Architecture - spring

2007 to present

Honors:

. Third place winner in IEEE CS Student Chapter Paper Contest, 2010.

. Second place winner in IEEE CS Student Chapter Paper Contest, 2008.

. Honored for Academic Excellence, University of Louisiana, Lafayette,

2007.

. Winner of IEEE CS Student Chapter Paper Contest, 2007.

. Merit Scholarship holder for Academic Excellence for securing position

in top 1% (out of 350,000 students approximately) in State Level High

School Certificate Exam, 1998.

Organization:

. IEEE Student Member (National)

. IEEE-CS UL student chapter secretary

Publication:

. Abhijit Sil, Harsha Yelisala, Priya Gadde, Magdy Bayoumi, "Energy-

Efficient MAC Unit for Ultra-Low Power DSP Applications", Journal of

Low Power Electronics (Under Review)

. Abhijit Sil, Krishna Balusu, Chandrasekhar Guram, Magdy Bayoumi, " A

3.1GB/s 8Kb Zero Precharge, Pipelined Highly Stable 2-Port 8T SRAM

Design in 65nm", IEEE Transactions on (VLSI) Systems(Under Review)

. Abhijit Sil, Magdy Bayoumi, "A Bit-interleaved Dual-port Subthreshold

6T SRAM Array With High Write-ability and SNM-free Read in 90nm

Technology",Journal of Low Power Electronics(Under Review)

. Abhijit Sil, Krishna Balusu, Venkat Yalamanchili, Rajesh Reddy Challa, Neeharikha Gogineni, Magdy Bayoumi, "An Energy-Efficient 32-bit

RISC Processor for Sensor Platform in 90nm Technology", Journal of Low

Power Electronics (Under Review)

. Abhijit Sil, Neeharika Gogeneni, Soumik Ghosh, Magdy Bayoumi, "A

Novel High Write Speed, Low Power, Read-SNM-Free 6T SRAM Cell" IEEE

MWSCAS, August,2008, Knoxville

. Abhijit Sil, Eswar Prasad Kolli, Soumik Ghosh, Magdy Bayoumi, " High

Speed Single Ended Pseudo Differential Current Sense Amplifier for

SRAM Cell", IEEE International Symposium on Circuits and Systems,18-

21 May 2008, Seattle

. Abhijit Sil, Soumik Ghosh, Magdy Bayoumi, "A Novel 8T SRAM Cell with

Improved Read-SNM",IEEE MWSCAS/NEWCAS, August 4-7,2007, Montreal,

Canada

. Sherine AbdelHak, Abhijit Sil, Yi Wang, Magdy Bayoumi, "Reducing

Misprediction Penalty in the Branch Target Buffer " IEEE

MWSCAS/NEWCAS, August 4-7,2007, Montreal,Canada

. Abhijit Sil, Soumik Ghosh, Magdy Bayoumi, "A Novel 90nm 8T SRAM With

Enhanced Stability" IEEE International conference on IC Design &

Technology, May 2007, Austin

Project Details:

Innovative SRAM Memory Chip Design: My work is devoted to design different

SRAM cell depending on their target application. Following are the topics

accomplished in this field.

o Single ended pseudo -differential current sense amplifier is

proposed in 90nm.

o Design 4 Kb sub-threshold 6T SRAM chip which can operate at

210mV and can also be used for bit-interleaving structure in

90nm.

o Design 4 Kb sub-threshold 7T SRAM chip which can operate at

170mV with high standby SNM and can also be used for bit-

interleaving structure in 90nm.

o Design 8Kb high-speed pipelined 8T SRAM chip with bit-

interleaving structure in 65nm.

o 4Kb conventional 6T SRAM array chip fabricated in 0.5um

technology.

Ultra-Low Power Processor Chip for Sensor Platform: In this work, I guided

a group that designed an energy efficient 32-bit RISC processor. The design

was targeted for branch and data intensive computations. The design

included both architectural and circuit techniques to optimize energy

consumption. An advance branching technique was introduced to reduce stalls

in branch intensive applications, which in turn decreased energy wastage

due to incorrect branching decision. Architectural innovation also included

low power data memory access policy. On the circuit front, energy

consumption was minimized by scaling down the supply voltage near to

threshold. The 24 Kb memories incorporated sub-threshold 6T SRAM cell to

ensure read stability at sub-threshold voltage down to 180mV. The design

has gone through the different stages of ASIC flow, such as, RTL coding,

behavioral verification, synthesis, post synthesis timing, floor planning

and custom layout, post layout timing, DRC, chip level verification.

Sub-threshold MAC Chip Design: In this work, I led a group that

investigated different logic families that are suitable for sub-threshold

logic circuit operation. Several logic gates layout were specially designed

for below sub-threshold operation. Finally sub-threshold 17bit MAC chip was

designed using dynamic threshold pass transistor logic at below 200mV

voltage in 90nm technology.



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