John G. Bai
**** ** ****** ***** **** 425-***-**** (mobile)
Vancouver, WA 98665 abl2tv@r.postjobfree.com
QUALIFICATION
Highly-motivated and result-driven personal with great enthusiasm to develop and utilize state-of-the-art
technologies for marvelous applications
Technical expertise / interests include following:
(Opto-) Electronics System Design/Analysis (Opto-) Electronic Packaging
Finite Element Modeling Reliability Analysis
Mechanical Design Product Manufacturing
Semiconductor Processing Thin Film Technology
Lean/Six Sigma (Black Belt Certificated) Continuous Improvement
• Computer programs: MS Windows, MS Office, Visio, Axapta, JMP, MiniTab, and Origin, etc.
• CAD / design packages: SolidWorks (5y), COSMOS (5y), AutoCAD (5y), ANSYS / Multiphysics (5y), I-
deas (3y), MathCAD (9y), and Mathematica (7y), etc.
AWARDS AND HONORS
• Ph.D. dissertation work was recognized as Paul E. Torgersen Research Excellence Award, Virginia Tech,
Blacksburg, VA, March 2006
• Special Thanks in HiTEC Conference, Santa Fe, NM, May 2006
• Featured Publications in journal of Nanotechnology, March 2007
• R&D 100 Award, October 2007
This award recognizes 100 Most Technically Significant New Products / Process of the year around the world
• IEEE Senior Membership promotion, December 2007
• Approved U.S. Permanent Residency by USCIS via category of Alien of Extraordinary Ability (EB1-A),
2008
• Senior Engineer promotion, nLIGHT Photonics Corporation, March 2009
This promotion recognizes my leadership in technical projects and contributions in research proposals
CERTIFICATES
• Train the Trainer Certification for customized training, Clark College, Vancouver, WA, January 2009
• Six Sigma Green Belt Certification, American Society for Quality, June 2009
• Six Sigma Black Belt Certification, ETI Group, July 2009
This certification recognizes successful accomplishment of a 128-hour SSBB training course and two six-sigma projects
• Six Sigma Black Belt Certification, American Society for Quality, October 2009
• Certificated Engineer-in-Training (EIT) for Mechanical Engineer, NCEES-Washington State, October 2009
WORK EXPERIENCE
Product Development Engineer / Senior Product Development Engineer, October 2007 – present
nLIGHT Photonics Corporation, Vancouver, Washington
• Design and process next generation semiconductor laser diodes and optical packages for engineering NPI
Design single-emitter laser diodes with both higher optical power and higher beam quality (brightness)
Design next generation laser packages with higher performance and higher manufacturability using CPU ceramic
submounts, BeO submounts, and IMS substrates
Design new T0 and burn-in test fixtures for NPI
John G. Bai, Page 1 of 4
• Support general semiconductor die bonding product line and troubleshoot the existing problems
Design and qualify CTE-matched and highly thermal conductive submounts for die bonding
Optimize the solder reflow and die bonding process via DOE and SPC
Use optical/ SEM microscopes, Sonoscan, X-ray, FIB, Auger, profilometer, Veeco and CAD analysis to troubleshoot
problems existed in both front end and back end semiconductor processes
• Process and improve RMA of opto-mechanical systems and optic fibers
Conduct research on failure mechanisms of opto-mechanical systems and fiber lasers and generate RMA reports
Work on RMA rate enhancement
• Led two six-sigma projects on processing and testing yield improvement of semiconductor laser diodes
Linked testing failures with initial thin-film processing defects in semiconductor laser diodes for better defect inspection
and screen criterions, total saving $150k/year
Added critical steps to screen out initial processing defects in optically critical zones and total saving $64k/year
• Simulated high power laser packages for enhanced thermal management
Generated a complete data list of thermal resistance for all the nLight’s high power products
Served as thermal and structural analysis agent for high power optoelectronic packages
• Resolved the initial burn-in rack overheating problems
Provided two comments during OCAPs: 1) perpendicular press for more uniform thermal contacts and 2) TIM material
• Designed opto-mechanical systems for laser diode far-field measurements
Enhanced far-field testing set up by better optical alignment, SMCD, and more reliable data acquisition
• Brought up on-line a dry glove box for optical module assembly
Prepared dry box for sealing dry air with oxygen during optical package liding and helium for indication
• Involved in grant proposal writing to bring-in government money
Research Associate, June 2006 – September 2007
Department of Mechanical Engineering
University of Washington, Seattle, Washington
• Developed patent-pending shadow edge lithography for nanoscale patterning and manufacturing
Developed a uniform, silicon-wafer scale and high-throughput nanomanufacturing method using conventional
microelectronic semiconductor processing technologies
Manufactured nanoscale structures such as nanowires, nanochannels, nanodots, and nanowells on 4-inch or larger silicon
wafers by parallel thin-film deposition and photolithography steps
Research Assistant / R&D Scientist, July 2000 – May 2006
Center for Power Electronics Systems / Center for High Performance Manufacturing
Virginia Tech, Blacksburg, Virginia
• Developed an award-winning high-temperature device interconnection method (Ph.D. dissertation work)
®
Prepared nanosilver paste which was commercialized as NanoTach by NBE Technologies., LLC in 2005
Processed and characterized low-temperature sintered nanosilver for high temperature packaging applications
• Developed patent-pending inkjet printing technique for high-performance rapid manufacturing
Developed ink-jet printable and low-temperature sinterable nanosilver suspension as a high-performance binder for rapid
manufacturing applications
• Led reliability evaluations of three die-bond technology of wire-bond, solder-bump and area-solder
Prepared three types of commonly used power packages in chip-scale level, totally up to ~600pc
Used thermal cycling experiment to evaluate their cycling reliability of the interconnections
Used FEA to simulated operational conditions and power cycling reliability
• Designed and fabricated flip-chip on flex integrated power electronics modules (IPEMs)
Started from bare semiconductor power devices, using the sputtering thin-film deposition and photolithography and
etching methods to form under bump metallization for ball grid array (BGA) of the flip-chip interconnection
• Developed magneto-optic current sensing systems for power electronics applications
Developed a compact, low-noise, low cost, and fiber-less magneto-optic current sensor for applications in integrated
power electronics modules
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• Maintained cleanroom equipments such as RIE, sputter and e-beam thin-film deposition machines
Responsibility included detailed process documentation, training new Micron center members, BoM preparation, changing
utility, and trouble-shooting existing problem in the Micron cleanroom
• Collaborated with General Electric Company on developing GE power overlay (POL) packaging
technology
Used sputtering and electroplating thin film deposition methods for GE POL development
Research Assistant, August 1998 – June 2000
Thayer School of Engineering
Dartmouth College, Hanover, New Hampshire
• Studied electrical properties of II-VI semiconductors (ZnS and ZnSe) using scanning probe microscopy
• Maintained scanning probe microscopy equipment
Research Assistant, September 1995 – July 1998
Peking University, Beijing, China
• Developed silicon-based light-emitting devices (LEDs) via thin-film deposition technology
• Collaborated with 13th Institute of Ministry of Electronics Technology to study light-emitting mechanism
• Characterized LEDs for signal / display applications
INVENTION
• With G. Q. Lu, et. al., “Nanoscale metal paste for interconnect and method of use .” VTIP disclosure # 03-
142, Global patent pending.
• With K. D. Creehan and H. A. Kuhn, “Ink-jet printed low-temperature sinterable nanometal suspensions
as a binding solution in rapid prototyping.” VTIP disclosure # 06-040, U.S. patent pending
• With G. Q. Lu, et. al. “A nano-metal composite made by electrostatic deposition from colloidal
suspensions as an electrical and thermal interface material for electronic products .” VTIP disclosure # 03-
170
• With J. Chung, “Shadow edge lithography for nanoscale patterning and manufacturing .” UW Tech
Transfer Reference No. 7623D, Global patent pending
• With J. N. Calata, G. Q. Lu, and P. G. Duncan, “A compact, low-noise, low cost, and fiber-less magneto-
optic current sensor for applications in integrated power electronics modules .” VTIP disclosure # 04-110
• With J. Chung, et. al, “Bio/chemical sensor in open nanochannels.” UW Tech Transfer Reference No.
7714D
EDUCATION
• Ph.D., Department of Materials Science and Engineering 2005
Virginia Polytechnic Institute and State University, Blacksburg, VA
Concentration: Electronics Materials/Packaging
• M.S., Thayer School of Engineering 2000
Dartmouth College, Hanover, NH
Concentration: Engineering Science
• M.S., Department of Physics 1998
Peking University, Beijing, China
Concentration: Semiconductor Process and Device
• B.S., Department of Applied Physics 1995
Tianjin University, Tianjin, China
PUBLICATIONS
John G. Bai, Page 3 of 4
• J. G. Bai, W. H. Yeo, and J. H. Chung, “Nanostructured biosensing platform shadow edge lithography for
high-throughput nanofabrication,” Lab on a Chip, vol. 9, no. 3, pp. 449-455, 2009
• Y. Liu, K. Oh, J. G. Bai, C. L. Chang, W. Yeo, J. H. Chung, K. H. Lee, and W. K. Liu, “Manipulation of
nanoparticles and biomolecules by electric field and surface tension,” Computer Methods in Applied
Mechanics and Engineering, vol. 197, pp. 2156-2172, 2008
• J. G. Bai, T. G. Lei, J. N. Calata, and G. Q. Lu, “Control of nanosilver sintering attained through organic
binder burnout kinetics,” Journal of Materials Research, vol. 22, no. 14, pp. 3494-3500, 2007
• J. G. Bai, J. N. Calata, and G. Q. Lu, “Processing and characterization of nanoscale silver pastes for
attaching SiC devices,” IEEE Transactions on Electronics Packaging Manufacturing, vol. 30, no. 4, pp. 241-
245, 2007
• J. G. Bai, C. L. Chang, J. H. Chung, and K. H. Lee, “Shadow edge lithography for nanoscale patterning
and manufacturing,” Nanotechnology, vol. 18, article no. 405307, 2007
• J. G. Bai, J. Yin, Z. Zhang, G. Q. Lu, and J. D. van Wyk, “High-temperature operation of SiC power
devices by low-temperature sintered silver die-attachment,” IEEE Transactions on Advanced Packaging, vol.
30, no. 3, pp. 506-510, 2007
• J. G. Bai, K. D. Creehan, and H. A. Kuhn, “Inkjet printable nanosilver suspensions for enhanced sintering
quality in rapid manufacturing,” Nanotechnology, vol. 18, article no. 185701, 2007. (Featured article in the
journal)
• J. G. Bai and G. Q. Lu, “Thermomechanical reliability of low-temperature sintered silver die-attached SiC
power device assembly,” IEEE Transactions on Device and Materials Reliability, vol. 6, no. 3, pp. 436-441,
2006
• J. G. Bai, J. N. Calata, and G. Q. Lu, “Discussion on the reliability issues of solder-bump and direct-solder
bonded power device packages having double-sided cooling capability,” ASME Journal of Electronic
Packaging, vol. 128, no. 3, pp. 208-214, 2006
• J. G. Bai, Z. Zhang, J. N. Calata, and G. Q. Lu, “Low-temperature sintered nanoscale silver as a novel
semiconductor device-metallized substrate interconnect material,” IEEE Transactions on Components and
Packaging Technologies, vol. 29, no. 3, pp. 589-593, 2006
• J. G. Bai, Z. Zhang, G. Q. Lu, and D. P. H. Hasselman, “Measurement of solder/copper interfacial thermal
resistance by the flash technique,” International Journal of Thermophysics, vol. 26, no. 5, pp.1607-1615, 2005
• J. N. Calata, J. G. Bai, X. Liu, S. Wen, and G. Q. Lu, “Three-dimensional packaging for power
semiconductor devices and modules,” IEEE Transactions on Advanced Packaging, vol. 28, no.3, pp. 404-412,
2005. (Invited paper)
• S. X. Dong, J. G. Bai, J. Y. Zhai, J. F. Li, G. Q. Lu, D. Viehland, S. J. Zhang, and T. R. Shrout,
“Circumferential-mode, quasi-ring-type, magnetoelectric laminate composite a highly sensitive electric
current and/or vortex magnetic field sensor,” Applied Physics Letters, vol. 86, no. 18, article no. 182506, 2005
• G. Q. Lu, X. Liu, S. Wen, J. Calata, and J. G. Bai, “Strategies for improving reliability of solder joints on
power semiconductor devices,” Soldering & Surface Mount Technology, vol. 16, no. 2, pp. 27-40, 2004
• J. G. Bai, G. Q. Lu, and X. Liu, “Flip-chip on flex integrated power electronics modules for high-density
power integration,” IEEE Transactions on Advanced Packaging, vol. 26, no. 1, pp. 54-59, 2003
• J. G. Bai, G. Q. Lu, and T. Lin, “Magneto-optical current sensing in integrated power electronics modules,”
Sensors and Actuators A: Physical, vol. 109, no. 1-2, pp. 9-16, 2003
• G. F. Bai, V. F. Petrenko, and I. Baker, “On the electrical properties of dislocations in ZnS using electric
force microscopy,” Journal of Scanning Microscopy, vol. 23, no. 3, pp. 160-164, 2001
• G. G. Qin, C. L. Heng, G. F. Bai, K. Wu, C. Y. Li, Z. C. Ma, W. H. Zong, and L. P. You,
“Electroluminescence from Au/(nanoscale Ge/nanoscale SiO 2) superlattices/p-Si,” Applied Physics Letters,
vol. 75, no. 23, pp. 3629-3631, 1999
• G. G. Qin, G. F. Bai, A. P. Li, S. Y. Ma, Y. K. Sun, Z. C. Ma, and W. H. Zong, “A comparative study of
electroluminescence from nanosized Si particles embedded silicon oxide films and that from nanosized Ge
particles embedded silicon oxide films,” Thin Solid Films, vol. 338, no. 1-2, pp. 131-135, 1999
• G. F. Bai, Y. Q. Wang, Z. C. Ma, W. H. Zong and G. G. Qin, “Electroluminescence from Au/native silicon
oxide layer/p+-Si and Au/native silicon oxide layer/n+-Si structures under reverse biases,” Journal of Physics:
Condensed Matter, vol. 10, no. 44, pp. L717-L721, 1998
John G. Bai, Page 4 of 4
• G. F. Bai, Y. P. Qiao, Z. C. Ma, W. H. Zong, and G. G. Qin, “Electroluminescence from Si/Si oxynitride
superlattices,” Applied Physics Letters, vol. 72, no. 26, pp. 3408-3410, 1998
• A. P. Li, G. F. Bai, K. M. Chen, Y. X. Zhang, Z. C. Ma, W. H. Zong, and G. G. Qin, “Electroluminescence
from Au/extra thin Si-rich SiO2 film/n+-Si under reverse biases and its mechanism,” Thin Solid Films, vol. 325,
no. 1-2, pp. 137-139, 1998
• G. G. Qin, A. P. Li, G. F. Bai, L. D. Zhang, Z. C. Ma, W. H. Zong, X. Wang, and X. W. Hu, “Effect of
chemical composition of silicon oxynitride on electroluminescence from semitransparent Au/extra thin Si
oxynitride film/p-Si structures,” Physics of Low-Dimensional Structures, vol. 1/2, pp. 179-186, 1998
• G. F. Bai, A. P. Li, S. Y. Ma, Y. X. Zhang, Y. K. Sun, G. G. Qin, Z. C. Ma, and W. H. Zong,
“Electroluminescence from Au/extra thin nanosized Ge particles embedded silicon oxide film/p-Si and
Au/extra thin nanosized Si particles embedded silicon oxide film/p-Si,” Physics of Low-Dimensional
Structures, vol. 1/2, pp. 127-132, 1998
• H. Y. Xie, J. G. Bai, Z. F. An, G. F. Xin, and G. Y. Chen, “High power GaAlAs/GaAs laser diode arrays and
their thermal management,” 9th Intersociety Conference on Thermal and Thermomechanical Phenomena in
Electronic Systems (ITherm), vol. 2, pp. 501-506, Las Vegas, NV, June 1-4, 2004
• J. G. Bai, G. Q. Lu, J. N. Calata, and T. Lin, “Potential application of magneto-optical current sensing in
power modules,” CPES Power Electronics Seminar, pp. 468-474, Blacksburg, VA, April 27-29, 2003
REFERENCE
• Will provide upon request
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