Tom Zimmermann

abja1r@r.postjobfree.com 574-***-****

*** *********** ****, ***** ****, IN 46556

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OBJECTIVE

GaN/Graphene/Diamond epi/device engineer

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SUMMARY

Tom Zimmermann has 11 years experience in nanotechnology and semiconductor

research. His device and material background is exceptional broad. He is a

pragmatic problem solver with the will of success attitude. He is

intensively cooperating and combines skills of a team, effectively. He is

an open-minded engineer/researcher with a strong research record: 2

book(chapters), 2 filed US patents, 20+ peer-reviewed papers and 50+

conference proceedings.

Specialities

- 11 years cleanroom experience in nanotechnology including thin-film

deposition (ALD, PECVD, ebeam-, sputter-deposition,

electro-plating), plasma etching (RIE, ICP), RTP annealing, wire

bonding, CMP, contact- and stepper-lithography.

- Extensive experience in technology of (III)-(V)-materials (AlN,

InAlN, AlGaN, InGaN, GaN, GaAs) primarily on Sapphire-, (111)-

Silicon- and SiC-substrate as well as SiGe, Silicon, (ultra-

)nanocrystalline and single crystal diamond, graphene and nanowires.

- Detailed knowledge in electron-beam-lithography (Leica EBPG-5HR,

Elionix ELS 7700).

- Electrical and mechanical cryogenic/temperature dependent (4 K -

1200oC) device characterization by DC, Pulse, TLM, CV, Hall-,

Large-signal/RF-power-, Small-signal/S-parameter- and Load-

displacement & electromechanical measurements (MEMS).

- Material characterization including SEM, EDX, AFM, micro-PL,

interference light microscopy, ellipsometry, VASE, alpha-stepper.

- Device modelling and programming with 2D device simulator SILVACO, 1D-

Poisson solver, ANSYS, SRIM, Assembly Language,

Visual Basic, Turbo Pascal, C, LabView and CAD design programs like L-

Edit, AutoCAD & SolidWorks.

Interests

- Biomedical nanotechnology for cancer diagnostics (mass-market nano-

arrays, DNA-chips, Lab-on-chip), precise cancer-tissue

localization (bio-imaging) and laparoscopic cancer surgery by

nanorobotics.

- Prosthetic stand-alone implants with nano-power-cells

(thermoelectric, osmotic, solar and piezoelectric motion power-cell and

nanomechanical generators).

- Power-electronics and power-conversion with high-temperature stable,

compact and monolithic integrated electronics and MEMS.

- Terahertz amplifiers and laser-transistors with photonic transmission

lines integrated into electronic systems

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RESEARCH EXPERIENCE

University of Notre Dame

Notre Dame, IN,

USA

Visiting Research Assistant Professor

Feb 2009 - present

- Currently involved in the development of Terahertz (III)-Nitride

based integrated circuits for high-frequency enhancement-

depletion-mode logic (DARPA-Project) "beyond" Si-CMOS technology,

collaborating with TriQuint (TX, USA), IQE (UK), MIT

and UIUC.

- Develop technology for subcritical barrier AlN/GaN HEMT ED-mode logic

with extensive use of electron-beam lithography.

- Successfully invented the first dopant-free epitaxy solution for low-

buffer-leakage nitride transistors on GaN templates, which has

been filed as a US patent and reported twice by Semiconductor Today.

- Mentored and trained students in nanotechnology and device

characterization.

University of Notre Dame

Notre Dame, IN,

USA

post-doc

Sept 2006 - Jan 2009

- Developed process for microfluidic chambers for dielectrophoresis of

nanowires.

- Applied design of experiments knowledge in optimization of ohmic

contacts to AlN/GaN heterostructures.

- Successfully demonstrated champion AlN/GaN HEMTs with record-low

sheet resistance and the world's highest current density

drive in all nitride HEMT devices.

University Ulm

Ulm, Germany

Research Assistant

Aug 2001 - Aug 2006

- Successfully designed, processed and characterized three novel device

structures:

1. P-channel InGaN/GaN HFET with a 2DHG-channel at 20 K

identified for the first time.

2. Piezo-electric cantilever in AlGaN/GaN on Silicon patterned

from a membrane structure resulting in first free standing

GaN cantilever with high piezo-response, collaborating

with the University Magdeburg.

3. n-type nano-diamond/p-type single crystal diamond pn-

junction operating at 1200oC, collaborating with the world-

leader of UNCD material growth Argonne National

Laboratory, IL, USA.

- Successfully invented power-device technology for AlGaN/GaN-,

InGaN/GaN- and InAlN/GaN-HFETs on (111)-Silicon substrate

in cooperation with microGaN GmbH, Germany. Power-devices were

extensively characterized by large-signal RF-power

measurements and small-signal S-parameter measurements.

- Generated novel device concepts by device modeling with SILVACO and

ANSYS and implemented concepts into novel compound

semiconductor devices (MEMS and HEMTs).

- Continuously sustained and serviced high-vacuum and cleanroom

equipment like RIE plasma etcher, RTP, DUV and high-

temperature probe station, minimizing downtime for equipment.

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INTERNSHIPS

United Monolithic Semiconductors (UMS) GmbH & DaimlerChrysler AG

Ulm, Germany

UMS is a leading European semiconductor company in radar technology for

European defence and March 2001 - July 2001

telecommunication applications primarily based on GaAs technology.

Successfully optimized performance of SiGe-HEMT devices for high speed

applications.

Working closely with major defence and aerospace companies EADS and THALES.

Liebherr Biberach GmbH

Biberach a.d. Riss, Germany

Liebherr Biberach is leading producer of cranes with highest quality

standards in this branch. Feb 1996 - Apr 1996

Developed skills in machining of steel and applied these skills directly in

the production process.

VEB Robotron

Dresden, Germany

Robotron and Carl Zeiss Jena belonged to the biggest High-Tech companies in

Eastern Europe. June 1989 - July 1989

Assembled and tested highly advanced personal computers in a restricted

production line for the Eastern European market.

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TEACHING EXPERIENCE

Lecture/practices/exam preparation in MOS Semiconductor Devices and Silicon

Technology 2003 - 2006

Semiconductor Technology Lab Course: Introduction in the World of

Semiconductor Technology: 2002 - 2003

Fabrication and Characterization of (III)-(V) HFETs

Supervised 3 master theses: - "Realization and Characterization of GaN-

based pH-Sensors"

2006

- "Piezo-Electrical Pressure Sensors"

2006

- "AlGaN/GaN-based Piezo-Electrical Sensor-Structures"

2004

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EDUCATION

University of Notre Dame

Notre Dame, IN,

USA

Visiting Research Assistant Professor, Department of Electrical Engineering

Feb 2009 -

present

post-doc at Prof. Huili (Grace) Xing

Sept 2006 - Jan 2009

University Ulm

Ulm, Germany

PhD of Electrical Engineering at Prof. Dr.-Ing. Erhard Kohn

Apr 2002

- Aug 2006

"Polarization effects in group-(III)-nitrides and their applications in p-

channel FETs and microelectromechanical structures"

MS of Solid-State Electronics at Prof. Dr.-Ing. Erhard Kohn

Apr 1998

- Mar 2002

"Complementary logic in InGaN- and AlGaN-based heterostructures"

BS of Electrical Engineering

Aug 1995 - Mar 1998

"Ohmic contacts on the material system InGaN and AlGaN"

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LEADERSHIP

Treasurer for 2 years, MAN Student Chapter

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MILITARY SERVICE

American-German-Corps II, Motorized Infantry, Germany

July 1994 -

June 1995

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AWARDS

Best Student Paper Award, IEEE Lester Eastman Conference on High

Performance Devices, 2004

Nomination for Argus EADS Systems & Defence Electronics Student Award in

Communications and RF-Technology, 2003

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SELECTED PUBLICATIONS

Books

T. Zimmermann, "Polarisationseffekte in Gruppe-(III)-Nitriden", published

by VDM Verlag, ISBN 978-3-8381-1337-1, 2010

Chapter contribution in M.S. Shur, P. Maki, "Advanced High Speed Devices -

Selected Topics in Electronics and Systems Vol. 51", World Scientific

Publishing Co. Pte. Ltd., ISBN 978-***-****-86-9, 2010

Patents

G. Li, T. Zimmermann, Y. Cao, R. Wang, H. Xing, D. Jena, "Threshold Voltage

Control in Wide-Bandgap Transistors by Work-Function Engineering", US

provisional patent application #10-109, June 2010

Y. Cao, T. Zimmermann, H. Xing, D. Jena, "Highly Insulating Buffer for

Al(Ga)N/GaN HEMT", US patent application #61/283,511, December 2009

Press

News about Hot Research Topics: Mike Cooke, "Stopping nitride HEMT buffer

leaks", Semiconductor-Today.com, Compound & Advanced Silicon, February

2010, http://www.semiconductor-

today.com/news_items/2010/FEB/NOTREDAME_020210.htm

Peer-reviewed Papers (Total: 22 papers. Full list available upon request.)

T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, H. Xing,

"AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm

transconductance", IEEE Electron Device Letters, vol. 29, no. 7, pp. 661-

664, 2008

T. Zimmermann, M. Neuburger, P. Benkart, F.J. Hernandez-Guillen, C.

Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, E. Kohn,

"Piezoelectric GaN Sensor Structures", IEEE Electron Device Letters, vol.

27, no. 5, pp. 309-312, 2006

T. Zimmermann, M. Kubovic, A. Denisenko, K. Janischowsky, O.A. Williams,

D.M. Gruen, E. Kohn, "Ultra-nano-crystalline / single crystal diamond

heterostructure diode", Diamond & Related Materials, vol. 14, no. 3-7, pp.

416-420, 2005

T. Zimmermann, M. Neuburger, M. Kunze, I. Daumiller, A. Denisenko, A.

Dadgar, A. Krost, E. Kohn, "P-Channel InGaN-HFET Structure Based on

Polarization Doping", IEEE Electron Device Letters, vol. 25, no. 7, pp. 450-

452, 2004

International Conferences (Total: 50 papers. Full list available upon

request.)

T. Zimmermann, Y. Cao, D. Jena, H. Xing, "Subcritical Barrier Enhancement-

Mode AlN/GaN HEMTs", 8th International Conference on Nitride Semiconductors

(ICNS-8), Jeju, Korea, 2009

T. Zimmermann, Y. Cao, J. Guo, X. Luo, D. Jena, H. Xing, "Top-Down AlN/GaN

Enhancement- & Depletion-mode Nanoribbon HEMTs", Device Research Conference

(DRC), Penn State University, Pennsylvania, USA, 2009

T. Zimmermann, Y. Cao, P. Saunier, D. Jena, H. Xing, "4 nm-AlN-barrier all

binary HFET with SiNx gate dielectric", IEEE Lester Eastman Conference,

Delaware, USA, 2008

T. Zimmermann, D. Deen, Y. Cao, J. Simon, N. Su, J. Zhang, J. Bean, P. Fay,

D. Jena, H. Xing, "High Current Density Ultrathin AlN/GaN HEMTs", 7th

International Conference on Nitride Semiconductors (ICNS-7), Las Vegas,

USA, 2007

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REFERENCES

Prof. Huili (Grace) Xing Prof. Dr.-Ing. Erhard Kohn

EE Department EBS Department

University of Notre Dame University Ulm

275 Fitzpatrick Hall Albert-Einstein-Allee 45

Notre Dame, IN 46556, USA 89081 Ulm, Germany

Email: abja1r@r.postjobfree.com Email: abja1r@r.postjobfree.com

Tel: +1-574-***-**** Tel: +49-731-**-*****

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