Engineer Process

AVAG AVAGYAN

**** ******** ***. **********, ** **311

Tel: 818-***-****, Cell: 323-***-****

E-mail: abh9l9@r.postjobfree.com

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OBJECTIVE: To obtain a challenging position as an Engineer in Research,

Development

and Manufacturing of Semiconductor Devices,

integrated-MEMS ICs and solar cells..

SUMMARY OF EXPERIENCE:

Strong Background in the following areas:

. Physics of semiconductors and semiconductor devices;

. In depth knowledge of theory, processing and application of

semiconductor devices;

. MEMS(Micro-Electro mechanical Systems) design and processing;

. Theory and Technology of Bipolar and CMOS devices and ICs;

Hands- on experience in the following process areas;

. Oxidation and diffusion, Ion Implantation, Photolithography and Wet

Etching.

. Thin Film Deposition, PECVD, LPCVD, MOCVD, Sputtering, (RIE) Dry

Etching.

. Wafer planarization methods such as CMP, grinding, lapping, and

polishing.

. CMOS Front-end and Back-end Processing.

. Wafer to wafer bonding.

. Packaging of semiconductor devices and integrated MEMS Elements.

. Sol-Gel processing for microelectronic chemical sensors.

. Bulk Micro-machining, Surface Micro-machining (Silicon KOH and TMAH

etching).

. Failure analysis and reliability of MEMS devices and ICs (SEM, FIB,

etc).

. Gyroscope and Accelerometer releasing process.

. Microelectronic hybrid processing.

Hands on experience with process development (to reduce process variations)

and product yield improvement. Proficient with DOE, SPC, DFMEA and PFMEA

efforts during process development and production. Strong problem solving,

project management and teamwork skills.

Hands on experience with Tanner EDA layout (L-Edit), DRC and Coventor

simulation tools.

Project Management and Supervision of a group of Engineers and Technicians

in Manufacturing.

Taught undergraduate courses in:

. Properties of semiconductor materials, Processing of semiconductor

devices and ICs.

. Analysis of crystallographic structure of solid state materials by X-

rays, SEM.

EMPLOYMENT HISTORY:

Sept. 2008- Oct.2010 International Solar Electric Technology, Inc.

(ISET, Inc), Chatsworth, CA

Sr. Process Engineer

. Designed, characterized, qualified, controlled and implemented new

production processes or process improvements for CIGS

(Copper-Indium-Gallium-di-Selenide) solar cells and modules.

. Developed and optimized MOCVD ZnO (doped with B and Al)

deposition process.

. Developed and optimized CBD Cadmium Sulfide (CdS) deposition

process.

. Managed group of engineers and technicians for CIGS solar

modules design and processing

Nov.2000-June2008 Kavlico Corp., Moorpark, CA MEMS Process

Development Engineer.

. Designed a new process for MEMS Pressure sensors based on ASIC on

SOI technology.

. Teamed with other engineers in the design of new integrated MEMS

capacitive pressure sensors.

. Developed a new sol-gel process for microelectronic humidity and gas

sensors.

. Optimized Silicon-SOI wafer fusion bonding process.

. Designed small size pressure sensors for medical application.

. Developed a low temperature 6" silicon wafer bonding for MEMS

application.

. Improved Cpk for wafer bonding process from 1.1 to 1.7.

. Reduced silicon diaphragm formation cycle (15%) by process

consolidation and better manufacturing planning.

. Determined a few root causes of the major failure modes in

capacitive MEMS based Pressure sensors, which improved manufacturing

yield by 14%.

. Developed a new process for MAP pressure sensors using DRIE via etch

of silicon wafers.

. Conducted reliability tests for new designed MEMS pressure sensors.

. Developed design and process specifications.

. Managed group of technicians and operators.

Mar. 2000-Nov.2000 Global Communication Semiconductors Inc., Torrance,

CA. Engineering Technician.

. Teamed with engineers in the development of low stress silicon

nitride PECVD process.

. Working with engineering to develop new process steps and utilize

steps on new equipments for manufacturing A3B5 devices (InGaP and

InP HBT and GaAs PHEMT).

1990-1997 State Engineering University of Armenia,

Dept. of Electronics, Yerevan,

Armenia. Associate Professor.

. Lectured the course on Microfabrication Technology

for Solid State Devices and ICs.

. Designed and tested MOSFET based Chemical

sensors.

1985-1990 Electronic Technologies Co., Armenia. Senior

scientist, Manager R&D Lab.

. Designed, fabricated and tested functional ion sensitive field -

effect transistors (ISFET) for pH-measurements in liquid solutions

and for medical applications.

1980-1985 Moscow Institute of Electronic Technology,

Moscow, Russia. Process Engineer, Research Scientist.

. Designed and developed new kind of magneto-sensitive p-i-n and n-p-i

modulate structures using ion implantation process.

. Designed, fabricated and tested a functional magneto-sensitive

discrete p-i-n diodes and transistors.

. Lead production team to resolve manufacturing issues, improve yield,

and reduce cycle time.

EDUCATION:

MSEE. Moscow Institute of Electronic Technology, Moscow, Russia

BSEE State Engineering University, Armenia

PUBLICATIONS AND PRESENTATIONS:

. Sixteen journal papers and presentations.

. Three patents.

REFERENCES: Available upon request.

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