Jeffrey R. Wank

**** *** *** ************

San Diego, CA 92117

503-***-**** (cell) abh3hs@r.postjobfree.com

Strengths: Materials characterization and new materials development

(especially epitaxial depositions), communicating ideas to both technical

and non-technical audiences, working in groups or independently,

persistence, perseverance and determination. I'm an out- and easy-going

person.

Experience: EPI process development (Si, SiGe, and Ge), Silicon process

development (Si, SOI, "SON"), statistical process control, large-scale

capital equipment procurement, installation, and qualification, lean

manufacturing, personnel management/coaching, and... pressing on.

Position desired: scientist/engineer in an exciting and fulfilling setting.

WORK EXPERIENCE:

JRW Creations

May 2009-present

Self-employed

Custom finishes for anything from computer cases to autos, specializing in

flames of all types. Expert at using Solidworks and Eagle. Additional work

in building custom piano benches, keepsake boxes, and electric guitars

using exotic woods such as curly (aka flame) maple, lacewood, high desert

ironwood, cocobolo, and many others.

Hewlett-Packard

July 2007- May 2009

Research Associate, QSR/IQSL, HP Labs (Corvallis, OR) Supervisor: Laura

King

Performed fundamental research and developed processes for optical

interconnect devices using epitaxial Ge on Si or SOI wafers. Germanium

layers studied were both of the very thick (>1 um) variety down to the very

thin (5 monolayer) variety, and included superlattices of the Ge:Si

variety.

Coordinated the installation, qualification, maintenance, and process

operation of an AMAT 200 mm EPI/RTP toolset in the HP Corvallis fab from

the ground up. Planned, developed, and documented methodologies for this

tool, enabling new and novel process development.

Conducted research and engineering for several novel photonics devices.

Research involved deposition of epitaxial pure germanium on silicon

substrates, as well as deposition of epitaxial silicon on pure germanium

layers, co-doping these layers, and developing new novel device structures

for future integration of optical devices into CMOS on silicon, Germanium-

on-Nothing, extremely thick Ge on Si, and others. Fundamental research on

growth of Ge on Si pursued understanding of how initial islanded growth

features affects thick Ge layers, and how the initial layers might be

affected with a thick Ge layer in mind.

Critical expertise in the use of AFM (Nanoscope-IV, etc); AFM was

absolutely critical for the projects worked on during this period. I

maintained ownership of a Nanoscope-IV throughout the project.

Other research: wet etch (EPI preclean) optimization including using some

alternative chemicals; basic scientific research on initial growth of Ge on

Si; development of novel methods of in-situ annealing for EPI processes.

Other skillsets gained:

Defect etching in both Si and Ge

Surface defect measurements and counting using standard optical techniques

(interferometer-based)

Basic TEM preparation and TEM/STEM/HAADF/etc use (Beam Chemistry)

Project and program management skills

Beta tester for SAS JMP 8, providing feedback over the course of several

months, especially scripting

User knowledge of several CAD tools, including SolidWorks and AutoCAD

Experience with FTIR, UV-Vis, and HPLC (etch chemical testing)

Use of LabView (constructed several add-on detectors to the EPI tool for

additional logging; sufficient sampling frequency was impossible with

existing equipment).

Construction, coding, and implementation of a station controller. Built

station controller for AMAT EPI/RTP toolset.

Gained additional XRD experience- use of other types of XRD tools,

including phased-array tools, and syncotron radiation use.

Many additional long hours in front of FEI SEM/beam tools.

Intel Corporation

May 2003- June 2007

Sr. Process Engineer, Portland Technology Development

EPI - Thin Films - Diffusion

Developed epitaxial silicon processes (SiGe:B, SiGeC, SiC, Si:P, etc) for

use in both digital (CMOS) and analog (HBT device) technologies.

Developed the 300 mm 65 nm node epitaxial SiGe:B process for Intel

Corporation, enabling large performance enhancement over the 90 nm

technology. Designed experiments and supervised a group of 8 technicians

during integrated implementation of that process. Participated in cross-

functional integrated team meetings to meet program goals. Developed and

maintained SPC (Statistical Process Control) system for process monitoring

of the EPI module. Enabled ability to run 65 nm process across a fleet of

tools both at the TD level as well as at the HVM level with the exact same

bulk film properties from each individual tool. Successfully implemented

new method for measuring compressive strain using XRD into an HVM

environment. Received award for this development effort.

Devised method and integrated flow to etch CMOS junction regions using a

low pressure CVD reactor and subsequently grow epitaxial SiGeB films in

those regions in the same reactor (US Patent granted). Became proficient at

using end-of-line electrical test parameters to enhance the integrated flow

for this patented process.

Engineered a 45 nm node epitaxial SiGe:B process, delivering another

significant performance enhancement over the 65 nm process. Working with a

cross-functional team, inserted a new toolset into the 1266 baseline for

the EPI module as the automation expert, software expert, and tool owner.

Awarded recognition award for smooth transition to the new toolset.

Working individually as well as with a team of other engineers involving

many trips to an external vendor, began research and commenced development

of new processes for the 32 nm node (now the current generation). Became an

expert SEM, xSEM, and FIB user. Became acquainted with many novel and

exciting new ideas for epitaxial deposition.

Gained expert knowledge of SPC processes, all forms of Microsoft products

including but not limited to Word/Excel/Powerpoint/Project/etc, SAS JMP,

and many, many other software instruments.

Department of Chemical Engineering, University of Colorado, Boulder, CO

Jan 1999-May 2003

Graduate Research Assistant

Designed, constructed, and maintained an atomic layer deposition (ALD)

system including a fluidized bed reactor. Designed and carried out

experiments using statistical methods, leading to an ability to conformally

coat submicron-size powders with nanometer scale control. Developed a

working mathematical model to describe vacuum fluidization of agglomerating

particles with applied vibrational forces. Taught undergraduate-level

chemistry and heat transfer courses. Gained experience with laser systems,

GC/MS systems, TGA, Gas sorption analysis, ICP/MS, SEM, TEM, and many types

of magnet analyses at NIST-Boulder. Became proficient in MATLAB and FLUENT.

Center for Pharmaceutical Biotechnology, Denver, CO

December 1998- June 1999

Graduate Research Assistant

Performed Freeze-drying experiments of Lipid-DNA complexes to work on a

viable gene therapy drug storage technique. Utilizing IR spectroscopy,

monitored breakdown of DNA in the complexes over periods of days to months

at various temperatures. Experience with Differential Scanning Calorimetry

(DSC).

Department of Chemistry, University of Colorado, Boulder, CO

March 1997-December 1998

Undergraduate Research Assistant

Performed multidimensional NMR experiments to elucidate millisecond dynamic

motions in a small RNA molecule dubbed the lead-dependent ribozyme.

Synthesized and purified site-specific radiolabeled RNA molecules. Grew,

isolated, and purified radioisotopically labeled nucleic acids using

methylotrophs. UNIX/IRIX systems administrator. Experience with GC/MS,

MALDI, MS/MS, FTIR, electrophoresis, HPLC, HPLC-IR, DNA and RNA extraction

and synthesis methods.

Department of Physics, University of Colorado, Boulder, CO

August 1996-March 1997

Undergraduate Research Assistant

Grew, isolated, and purified proteins from bacteria. Operated an atomic

force microscope. Performed thin (6-36 Angstrom) metal deposition. Created

nanostructured materials using biomimetic approaches.

United States Navy, Pearl Harbor, HI

April 1994-April 1995

Radiological Controls Monitor/ Shift Supervisor

Planned, coordinated, and supervised detailed radiation and radioactive

contamination surveys in conjunction with submarine nuclear reactor plant

overhauls. Maintained secret clearance.

United States Navy, San Diego, CA

March 1988-April 1994

Engineering Laboratory Technician

Operated, maintained, and supervised operation of a naval nuclear power

plant and supporting auxiliaries aboard the USS Louisville, SSN-724, and

the USS Tennessee, SSBN-734. Maintained Top Secret clearance.

EDUCATION:

Ph.D., Chemical Engineering

May 2003

University of Colorado at Boulder

Thesis Title: "Coating particles with Alumina Nanolayers Utilizing Atomic

Layer Deposition in a Fluidized Bed"

Abstract:

This thesis explored the growth and properties of ultrathin (nanometer

scale) and conformal films on small (<100 (m) particles utilizing a

fluidized bed reactor. By modifying the surface of small particles with an

extremely thin layer of an inert substance, the surface characteristics of

these particles can be modified without affecting the bulk properties of

the powder. Films worked with include Al2O3, SiO2, W, and Cu; substrates

included SiO2,_ BN, and Fe. By changing the surface characteristics of the

substrate particles to behave more an oxide, the surface properties of the

powder can be modified without altering the bulk properties. This work has

relevance in corrosion control, semiconductors, and military applications.

Related Coursework: Surface Science, Transport Phenomena, Mass Transport,

Thermodynamics, Kinetics

B.A., Chemistry, Magna Cum Laude

December 1998

Thesis Title: "Active Site Dynamics in the Lead-Dependent Ribozyme"

Related Coursework: Organic Chemistry, Physical Chemistry, Instrumental

Analysis

HONORS & AWARDS:

PTD Divisional Award, Insertion of EDT module into baseline for P1266 (Q2

2006)

PTD-IDY Divisional Award, Contributions to Excellent PMOS Performance (Q1

2004)

NSF, Graduate Assistance in Areas of National Need Fellowship - GAANN (2001-

2003)

University of Colorado Graduate School Fellowship (2000-2001)

Phi Beta Kappa, Member (1998)

Magna Cum Laude, Chemistry (1998)

Commander, SUBPAC letter of commendation while attached to the USS

Louisville, SSN-724 (1994)

PUBLICATIONS:

J. Wank, S. George, A. Weimer, "Nanocoating Individual Cohesive Boron

Nitride Particles in a Fluidized Bed Reactor," Powder Technology 142 (1):

59-69 (2004).

J. Wank, S. George, A. Weimer, "Coating Fine Nickel Particles with Al2O3

Utilizing An Atomic Layer Deposition-Fluidized Bed Reactor (ALD-FBR),"

Journal of the American Ceramic Society (submitted for publication December

2001).

J. Wank, S. George, A. Weimer, "Conformal Encapsulation of Fine Boron

Nitride Particles with Oxide Nanolayers," Functionally Graded Materials

2000, American Ceramic Society (2002).

J. Wank, S. George, A. Weimer, "Vibro-Fluidization of Fine BN Powder at Low

Pressure," Powder Technology 121: 194-207 (2001).

J. Wank, C. Hoogstraten, A. Pardi, "Active Site Dynamics in the Lead-

Dependent Ribozyme," Biochemistry 39(32): 9951-9958 (2000).

D. Fattal, M. Fiorentino, J. Wank, T. Kamins, L. King, and R. G.

Beausoleil, "Silicon-Germanium microdisk detectors for on-chip optical

interconnects," in review.

PATENTS:

"CMOS Transistor Junction Regions Formed By A CVD Etching and Deposition

Sequence," Intel Corporation, Patent awarded 2005.

"Insulating and Functionalizing Fine Metal Particles with Conformal Ultra-

thin Films," University of Colorado, Patent awarded 2003.

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