Gensheng Huang, Ph.D.

** **** ***** ******, ***.*,

Bethlehem PA, 18018.

Tel: 610-***-****.

E-mail: abh324@r.postjobfree.com

Objective: Senior semiconductor epitaxial Engineer or Scientist

Permanent Resident of U.S.A

Core Competencies

Ten years experience of MOCVD growth

Strong knowledge and hands-on experience in Aixtron and Veeco MOCVD system

(recipe, MO source, scrubber, MFC, vacuum, pump, etc)

Hands-on experience of maintenance of MOCVD system and relative equipments

Strong knowledge and hands-on experience of all characterization tools

(XRD, PL, AFM, SEM, TEM, SMIS, Hall and ECV)

Strong knowledge and hands-on experience of GaAs and GaN based material

growth and all optoelectronic devices (LED, high power laser, quantum

cascade laser, vertical cavity surface emitting laser, photodetector, solar

cell)

Familiarity with device process (lithography, PECVD, E-beam, ICP)

Familiarity with database software and Microsoft office

Professional and Research Experience

Research Associate

Aug. 2007- Present:

Center for Optical Technologies, Department of Electrical and Computer

Engineering

Lehigh University, PA 18015, USA

. Successfully developed staggered InGaN quantum wells green light-

emitting diodes employing graded growth-temperature profile has

produced an output power and radiative efficiency of three-layer

staggered InGaN QW LED that is improved by 2.0-3.5 times, in

comparison to those of conventional InGaN QW LED.

. Developed high quality of AlInN lattice match to GaN leads to find

lattice-matched AlInN alloy on GaN as excellent material candidate for

thermoelectric application and other applications.

. The idea of InGaN-delta-InN quantum wells was first proposed to

increase the electron-hole wave function overlap which is applicable

for high-efficiency nitride-based light-emitting diodes and lasers.

Postdoctoral Research fellow

June, 2004- July, 2007:

Institute of Electro-Optical Engineering, National Chiao Tung University,

Taiwan.

. Crack free and higher reflective AlN/GaN distributed Bragg reflector

with inserting AlN/GaN superlattices was first proposed and grown.

. The first electrically pumped GaN based VCSEL was fabricated and

reported in the world.

. A high quality of multilayer structure of active region of GaN/AlGaN

MQW was grown based on the quantum cascade laser.

. An advanced GaN ultraviolet light emitting diode (UVLED) structure was

inventively designed. This kind of LED combined the SiN buffer layer,

a thin AlGaN insertion layer to get low leakage current, high light

output power and large live percentage.

Research Fellow

Aug. 2000- Dec. 2003:

School of Electrical and Electronic Engineering, Nanyang Technological

University, Singapore.

. Strong knowledge of design of GaAs based high power laser.

. Systematically investigated the arsenic incorporation into InGaAsP

during InGaAsP MOVPE growth experimentally and theoretically, and

proposed for the first time the impact of the ratio of arsenic source

and group V and the ratio of group III and group V on the arsenic

incorporation into InGaAsP.

. The record output power of high power laser with 808 nm wavelength has

been achieved under continue wavelength condition for one single laser

bar device at the lower threshold current.

Education

Ph. D of Electrical Engineering, 2000

Shanghai Institute of Technical Physics, Chinese Academy of Sciences,

Shanghai, China.

Master of Electrical Engineering, 1997

Institute of Crystal Materials (Chinese State Key Lab), Shandong

University, Jinan, China.

Bachelor of Physics, Shandong University, Jinan, China, 1987

SELECTED REFEREED JOURNAL PUBLICATIONS LIST

1. H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V.

Dierolf, and N. Tansu, "Growths of Staggered InGaN Quantum Wells Light-

Emitting Diodes Emitting at 520-525 nm Employing Graded-Temperature

Profile," Appl. Phys. Lett., 95, (2009) 061104

2. Tien-Chang Lu, Chih-Chiang Kao, Hao-Chung Kuo, G. S. Huang, and Shing-

chung Wang, "CW lasing of current injection blue GaN-based vertical

cavity surface emitting laser"

Appl. Phys. Lett. 92 (2008) 141102.

3. G. S. Huang, T. C. Lu, H. H. Yao, H.C. Kuo, S. C. Wang, Chih-wei Lin,

Li Chang "Crack-free AlN/GaN distributed Bragg reflectors incorporated

with AlN/GaN superlattices grown by metalorganic chemical vapor

deposition" Appl. Phys. Lett., 88 (2006) 061904.

4. G. S. Huang, T. C. Lu, H. H. Yao, H.C. Kuo, S. C. Wang, Greg Sun, Chih-

wei Lin, Li Chang, "GaN/AlGaN active regions for terahertz quantum

cascade lasers grown by low pressure metal organic vapor deposition",

J. Cryst. Growth, 298 (2007) 687-690.

5. (Review Paper) Shing-Chung Wang, Tien-Chang Lu, Chih-Chiang Kao, Jong-

Tang Chu, G. S. Huang, Hao-Chung Kuo, Shih-Wei Chen, Tsung-Ting Kao,

Jun-Rong Chen, and Li-Fan Lin "Optically Pumped GaN-based Vertical

Cavity Surface Emitting Lasers: Technology and Characteristics", Jpn.

J. Appl. Phys., Vol. 46, No. 8B (200*-****-****.

PATENT

1. G.S. Huang, H. H. Yao, H.C. Kuo, S. C. Wang "Process for fabricating

group III nitride based reflectors" (Taiwan patent and Japan patent

No. 4511473).

2. Nelson Tansu, Hongping Zhao, Guangyu Liu, and Gensheng Huang,

"Staggered InGaN Quantum

Well with InN Delta-Layer". (Provisional Patent Application)

3. Nelson Tansu, Xiao-Hang Li, Hongping Zhao, Guangyu Liu, Gensheng Huang,

James F. Gilchrist,

Pisist Kumnorkaew, "Supercontinuum Broadband White Light-Emitting

Diodes by Regrowth Method,"

(Provisional Patent Application)

4. Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, and Gensheng Huang

"Excellent Thermoelectric

Materials Based on AlInN-GaN Grown by Metalorganic Vapor Phase

Epitaxy". (Provisional Patent

Application)

Selected Research Works Featured in Magazine / Newspapers

"The first electrically injected blue-emitting VCSEL operates at 77

K" in Laser Focus World and Compound Semiconductor News

http://www.laserfocusworld.com/display_article/330730/12/none/none/NBrea

/The-first-electrically-injected-blue-emitting-VCSEL-operates-at-77-

and

http://compoundsemiconductor.net/csc/news-

details.php?cat=news&id=33855&msg=1

Professional Affiliations

2006 - Present, Member, Material Research Society (MRS)

2007 - Present, Member, Sigma Xi Research Society

Journal Reviewer

1. IEEE Journal of Selected Topics in Quantum Electronics (published by

IEEE LEOS)

2. Journal of Crystal Growth (published by Elsevier Science)

G.S. Huang, Lehigh University

(RCEAS, ECE & COT)

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