Epitaxy Process Engineer

Description

We are seeking a highly skilled, self-motivated epitaxy process engineer for developing and implementing GaAs epitaxy processes for Micro-LED display technologies. You will work with emerging displays technologies, in ensuring that we successfully bring these technologies to our customers, in the industry leading bar that we’ve established.

Responsibilities

• Develop and optimize epitaxial growth recipes for InGaAlP micro-LED display.

• Monitor and analyze key material properties such as thickness, composition, uniformity, crystal quality, and defect density using metrology tools.

• Perform root cause analysis and implement process improvements to enhance material quality and yield.

• Collaborate with device, process, and reliability teams to align epitaxial structures with device performance requirements.

• Take ownership for equipment, monitor process and characterization equipment performances

• Establish and execute data collection/analysis activities for high complexity technical issues

• Maintain standard operating procedures and traceability

• Publish technical literature and reports in relation to process innovations and be primary link with internal and external product design as appropriate

Qualifications

Minimum Qualifications:

• Master’s degree in Electrical Engineering, Physics, Materials Science, or a related field.

• 3 years of hands-on experience in compound semiconductor MOCVD epitaxial growth engineering technical environment.

• 3 years of hands-on experience with characterization of epitaxy wafers by PL, SIMS, XRD, AFM and TEM.

Preferred Qualifications:

• PhD degree in Electrical Engineering, Physics, Materials Science, or a related field.

• 5 years of hands-on experience with MOCVD of laser, LEDs, or photodetectors.

• Solid understanding of III-V semiconductor materials and device physics.

• Familiarity with statistical and data analysis tools (e.g., JMP, Minitab, Python).