Dr. Changxue WANG
Potsdam, NY13676, USA
• Ph.D, Engineering Mechanics, December 2004, Iowa State University, Ames, Iowa.
Dissertation Title: Stochastic models for material removal rate (MRR) in chemical mechanical planarization (CMP) process
• M.S, Statistics, May 2005, Iowa State University, Ames, Iowa.
• M.E, Engineering Mechanics, Huazhong University of Science and Technology (HUST), Wuhan, China.
• B.S, Applied Mechanics, Fudan University, Shanghai, China.
• Research Assistant Professor & CMP Facility Manager Dec. 2007 - Present
Postdoctoral Research Associate & CMP Facility Manager Aug. 2007 – Nov. 2007
Postdoctoral Research Associate Jan. 2006 – Aug. 2007
Center for Advanced Materials Process (CAMP), Clarkson University, Potsdam, New York
1. Research and development of new slurries for copper, tungsten, oxide, STI, barrier metal layers, FEOL&BEOL TSV, hard disk substrate and MEMS polishing;
2. Investigation and evaluation of CMP consumables (pads, conditioner disks, retaining rings, slurries, etc.);
3. CMP process modeling and simulation.
1. Routine maintenance of multi-million dollars (state of the arts) polishing, metrology, and analytical instruments/tools at CAMP, Clarkson University;
2. Ordering, tracking and inventory recording & updating of CMP consumables (wafers, pads, conditioners, slurries, etc.) for lab/group’s CMP research work;
3. Ordering and inventory tracking/updating of chemicals, lab supplies and CMP facility tool/instrument parts;
4. Managing annual budget of over $200,000 for CMP facility usages and over $100,000 for consumables usages;
5. Acting as Co-PI of industrial company sponsored research projects with funds over $100,000 annually;
6. Leading a team of students, Postdoc researchers on R&D work on fundamentals and applications of CMP slurries;
• Postdoctoral Research Associate Jan. 2005 -- Jan. 2006
Iowa State University, Ames, Iowa
Research: CMP Process Modeling and Simulation
• Graduate Assistant (TA/RA) Aug. 1997--Dec. 2004
Dept. of Aerospace Engineering, Iowa State University, Ames, Iowa
Teaching: Taught undergraduate lab courses, graded homework/lab reports and held recitation sessions.
Research: Finite element analysis (FEA) and boundary element analysis (BEA) of statics and dynamics of mechanical systems; mesh optimization of mechanical system for ANSIS finite element analysis (FEA); vibration and noise signal acquisition, analysis and control; high performance computation; CMP process modeling and simulation; dynamic system modeling, analysis and simulation; statistical signal analysis.
• Lecturer July 1991--Aug. 1997
Dept. of Mechanics, Huazhong Univ. of Sci. & Tech. (HUST), Wuhan, China
Teaching: Taught a variety of undergraduate courses – Statics, Kinetics, Dynamics, Mechanics of Materials, Vibration Theory & Applications.
Research: Dynamic system modeling, analysis and simulation, vibration theory and its applications.
Other: Undergraduate student mentor/advisor
1. Yuzhuo Li, Changxue Wang, “Slurry containing multi-oxidizer and mixed nano-abrasives for tungsten CMP”. Filed to U.S Patent and Trademark Office. Provisional application No. 60/952,933, filed on July 31, 2007; Application No. 12/220,958, filed on July 30, 2008; Publication No. US 2009/0047787 A1, publication date: Feb. 19, 2009; Application No. 13/084,024, filed on April 11, 2011, publication No. US 2011/0186542 A1, publication date: Aug. 04, 2011.
2. Yuzhuo Li, Changxue Wang, Daniel K. Shen, “Method for Forming Through-Base Wafer Vias”. Provisional application filed to U.S Patent and Trademark Office on March 11, 2011.
Professional Experience Related to CMP Process
• Over 10 years’ experience of CMP process;
• Over 6 years’ experience on various CMP slurry research & development;
• Over 6 year’s hands-on experience on 100mm, 200mm & 300mm wafer polishing and 95mm NiP/glass disk polishing;
• Research and development of new slurries for Cu, W, Oxide, barrier metal layer, Cu TSV, Cu/Si TSV, STI wafers, hard disk substrate (NiP/Quartz Glass) and MEMS polishing;
• Investigation & evaluations of CMP consumables (R&H/Dow, Cabot, Thomas West, Mipox, SemiQuest pads; 3M, Saesol and other conditioner disks, Cabot/DANano Cu/W slurries; Retaining Rings; etc);
• Class 10 Cleaning Room work experience;
• CMP process modeling (MRR and MRR decay, micro/nano scratch generation probability);
• Management of wafers, chemicals, pads, conditioners and slurries for CMP research group;
• Routine maintenance of state-of-the-art industrial standard polishing, metrology and analytical tools/ instruments;
• Polishers with hand-in experiences
WSI 372, WSI 372M, Strasbaugh 6EG n-Hance, GnP, IPEC 676, Struers & Allied High-Tech;
• Metrology & Analytical Instruments with hands-on experiences
4-point Probe/CDE ResMap, KLA Tencor RS-30 & RS-35, Parker AFM Profilometer, Filmetrics, FilmTek 2000, Thermo-Wave 2600B Opti-Probe, Burleigh Horizon, Zygo, KLA-Tencor Surfscan 7700M, Ambois XP-2 Profilometer, Evergreen Post-CMP Cleaner, DSS200 Scrub Cleaner, ALV Particle Size Analyzer, Matec Zeta Potential Analyzer, BIC Particle Size and Zeta Potential Analyzer, Malvern ZetaSizer, Nikon Bright/Dark Filed Microscope, etc.
(a) Archival Journal Publications
1. C. Wang, P. Sherman, A. Chandra, D. Dornfeld, “Pad surface roughness and slurry particle size distribution effects on material removal rate (MRR) in chemical mechanical planarization”, 55th CIRP General Assembly, STC G, 54/1/2005, pp. 309-312, Aug. 21-27, 2005, Antalya, Turkey.
2. C. Wang, P. Sherman, A. Chandra, “A stochastic model for the effects of pad surface topography evolution on material removal rate decay in chemical mechanical planarization (CMP)”, IEEE Transaction on Semiconductor Manufacturing, Vol. 18, No. 4, pp. 695-708, Nov. 2005.
3. C. Wang, P. Sherman, A. Chandra, “Modeling and analysis of pad surface topography and slurry particle size distribution effects on material removal rate (MRR) in chemical mechanical planarization”, International Journal of Manufacturing Technology and Management, Vol. 7, Nos. 5/6, pp. 504-529, 2005.
4. L. Wen, C. Wang, P. Sherman, “Using variability related to families of spectral estimators for mixed random processes”, ASME Journal of Dynamic Systems Measurement and Control, Dec. 2001,Vol. 123, pp. 572-584.
(b)Conference Proceedings Publications
1. Yuzhuo Li, Krishnayya Cheemalapathi, Changxue Wang, Tada Tetsujiro, Takashi Arahata, Ichiro Kodaba, and Jun Watanabe, “Influence of Pad Structures on Slurry Performance for Cu CMP”, International Conference on Planarization/CMP Technology, October 25 – 27, 2007 Dresden.
2. Y. Li, C. Wang, X. Chen, Z. Wu and Y. Li, “Investigation of the Roles of Anionic Poly-electrolytes in Copper CMP”, 24th International VLSI/ULSI Multilevel Interconnection Conference (VMIC), Fremont, CA, Sept. 24-27, 2007, pp. 463-468.
3. Y. Li, K. Cheemalapati, C. Wang, C Burkhard, W. Jun, I. Kodaka, H. Atsushi, K. Toshihiro, K. Hozumi, “Correlation between pad structures and CMP performance”, Proceedings of Twenty Third International VLSI/ULSI Multilevel Interconnection Conference (VMIC), Fremont, CA, 2006, pp. 444-450.
4. C. Wang, Y. Han, P. Sherman, A. Chandra, “Scratch generation probability in CMP”, CMP-MIC 2006, pp.471-479, Fremont, CA, Feb. 21-23, 2006.
5. C. Wang, P. Sherman, A. Chandra, “A stochastic model for the effects of pad surface topography evolution on material removal rate decay in chemical mechanical planarization (CMP)”, CMP-MIC 2004, pp. 171-178, Marina Del Rey, California, Feb.23-26, 2004.
1. Yan Mu, Mingjie Zhong, Changxue Wang, “Chemical Mechanical Planarization of NiP Substrate”, CAMP Spring Tech Meeting, Albany, NY, May 17th, 2012.
2. Sheik Ansar, Manivannan R., Kenneth Rushing, Changxue Wang, Yan Li, Eason Su, Shyam Venkataraman, Yuzhuo Li, “Ceria and Silica Based CMP Slurries for FEOL Applications”, 16th International Symposium on Chemical-Mechanical Planarization, August 7-10, 2011, Lake Placid, New York.
3. Bastian Noller, Changxue Wang, Vijay Raman, Michael Lauter, Albert Sugiharto, Yuzhuo Li, “ Copper slurries for 3D computer chips: TSV“, 15th International Symposium on Chemical-Mechanical Planarization, August 8-11, 2010, Lake Placid, New York.
4. Changxue Wang and Yan Li, Yuzhuo Li, “Fundamental Investigation of the Correlation Between Passivation Film Integrity and Defectivity During Metal CMP”, Invited paper# F1.5, Symposium F: Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro and Nanoelectronics, Materials Research Society (MRS) Spring Meeting, April 6-8, 2010.
5. Changxue Wang, Kevin Teo and Yuzhuo Li, “A High Removal Rate Cu Slurry for TSV Applications”, 14th International Symposium on Chemical-Mechanical Planarization, August 9-12, 2009, Lake Placid, New York.
6. Changxue Wang and Yuzhuo Li, “CAST CMP Facility at CAMP of Clarkson University”, 13th International Symposium on Chemical-Mechanical Planarization, August 10-13, 2008, Lake Placid, New York.
7. C. Wang, K. Cheemalapathi, Y. Li, T. Tada, T. Arahata, I. Kodaba, M. Dalal, S. Iyer,“ Non-Cell Pads for Cu CMP,” 12th International Symposium on Chemical-Mechanical Planarization, August 12-15, 2007, Lake Placid, New York.
8. Changxue Wang, Yuzhuo Li, “Evaluation of Slurries Containing Engineered Nano Abrasive Particles for W CMP”, CAMP Spring Tech Meeting, Finger Lake, NY, May 2007.
(d) Book Chapter
1. C. Wang, E. Paul, T. Kobayashi, Y. Li, “Pads for IC CMP”, pp. 123-170, Chapter 5 in the book “Microelectronic Applications of Chemical Mechanical Planarization” edited by Y. Li, published by John Wiley & Sons, Oct. 2007, ISBN: 978-0-471-71919-9.