BED P. SHARMA
**** *. ******* ******-*, Denton, TX, 76201 Phone: 940-***-****, Email: *********@**.***.***
Citizenship status: Permanent Resident, USA
TECHNICAL SKILLS
Thin Film Deposition and Processing
Magnetron sputtering physical vapor deposition (PVD) (for metal, ceramic, and semiconductor)
Atomic layer deposition (ALD) (ZnO deposition)
Chemical vapor deposition (CVD) (graphene synthesis)
Ion beam implantation/irradiation
Plasma processing to thin film for surface modification
Rapid thermal processing (RTP) of semiconductor materials and high k dielectric
High and low temperature furnaces for thermal processing of materials
Thin Film Characterization
• Auger electron spectroscopy (AES)
X-ray diffraction (XRD),
• Scanning electron microscopy (SEM)
X-ray photoelectron spectroscopy (XPS)
• Energy dispersive X-ray spectroscopy (EDX)
Ultraviolet photoelectron spectroscopy (UPS)
• Rutherford backscattering spectroscopy (RBS)
Raman spectroscopy
• Profilometer, and four point probe
Ellipsometry
Atomic force microscopy (AFM)
Miscellaneous Technical Skills
Hard anodization and wet etching (electrochemical) for Si nanoholes, RCA cleaning of Si wafer, Ar ion etching
Reactive ion etching (RIE) to tailor size of polystyrene beads and to produce Si nanopillars by nanosphere lithography
Differential scanning calorimetry (DSC), Dynamic mechanical analyzer (DMA), 3- point bending, Horn sonicator
Ultrahigh Vacuum (UHV) system: UHV lab set up by assembling different UHV chambers, UHV tools, and sources to make an
insitu system for thin film deposition, processing, and characterization, He leak test (RGA)
Finding root cause of problems and troubleshooting to UHV chambers, characterization tools, and processing tools, strong
problem solver, self-starter, quick learner of principles, materials, and tools operations
Design of Experiments (DOE)
Computer Skills
Microsoft office (Word, Excel, PowerPoint), Origin, Sigma plot, SRIM/TRIM simulations, SIMNRA simulations, Multipack for
XPS data analysis, MDI JADE for XRD data analysis
Statistical data analysis
PROFESSIONAL EXPERIENCE
Laboratory for Electronic Materials and Devices, Department of Materials Science and Engineering, University of North
Texas, August 2009-December 2013
Magnetron sputter deposition (PVD) of Ruthenium (Ru) thin film and modification by surface plasma nitridation, and C -ion
beam irradiation to improve the diffusion barrier performance of Ru for advance copper metallization to be used at BEOL
of the transistors/CMOS
Reactive co-sputtered deposition of Ru-Al-N film for the purpose of diffusion barrier for copper to be used at BEOL of the
transistors/CMOS
Metal thin films (such as Al, Cu, Ta etc.,) and ceramic films (such as TaN, AlN, ZnO etc.,) deposition by PVD
Low temperature thermal processing of Cu/Ru/SiO2, Cu/N-plasma irradiated Ru/SiO2/Si, Cu/C-ion irradiated Ru/SiO2/Si,
Cu/Ru-Al-N/SiO2/Si, Cu/TaN/SiO2/Si structures, high temperature vacuum annealing of Si implanted SiO2 sample at the
temperature of 1100 oC for the synthesis of Si nano-crystals in SiO2 matrix, rapid thermal processing (RTP) of multiple
energy carbon ion implanted Si at 1100 oC for the synthesis of buried layer of β-SiC in silicon.
Thin films characterization by using XPS, XRD, RBS, EDX, AES, SEM, four point probe, profilometer etc.
Work function tuning of ITO with few monolayers of RuO2 deposition by means of reactive sputtering on top of it for the
application in solar cell, work function determination was performed with UPS measurement, and chemical analysis was
carried out with XPS.
Ultrathin silicon nitride deposition by using PVD and characterization using XPS for the application in gate die lectric for
semiconductor devices.
Mentored the first and second years’ graduate students, and trained them in vacuum technology, processing tools, and
characterization tools.
ACADEMIC BACKGROUND
Ph. D., Materials Science and Engineering, University of North Texas, Denton, TX, USA ( December, 2013), GPA: 4.0/4.0
Title of Dissertation: Nano-crystallization inhibition in 5 nm Ru thin film diffusion barriers for advanced copper interconnects
M.S., in Physics, Southern Illinois University, Carbondale, IL, USA (December, 2009), GPA: 3.93/4.0
Title of thesis: Effect of sonication on thermal, mechanical, and thermo -mechanical behavior of epoxy resin
M.Sc., in Physics, Tribhuvan University Nepal (2006), GPA: Distinction division (equivalent to 4.0/4.0)
Concentration: Solid state Physics
AWARDS, ACHIEVEMENTS, AND LEADERSHIP
Outstanding Poster and Presentation Award, 22nd International Conference on the Application of Accelerators in Research and Industry
(CAARI)
Masters Doctoral Fellowship Award 2009, University of North Texas, Denton TX.
Thesis and Dissertation Fellowship Award 2012, University of North Texas, Denton TX
Academic Achievement Scholarship, UNT (2009-2010)
Elected as a secretary in Nepalese Student Association University of North Texas (NSA -UNT) (2010-2011)
Elected as a treasurer in Nepalese Student Association (NSA-SIUC) (2008-2009)
PRESENTATIONS
C-ion irradiation of Ru ultra-thin films for enhanced Cu diffusion barrier
B.P. Sharma, V.C. Kummari, P.R. Poudel, B. Rout, F.D. Mcdaniel and M. El Bouanani, 22nd International Conference on the Application of
Accelerators in Research and Industry (CAARI), 2012
RBS and XPS studies of CH4 plasma irradiated TaN for Cu diffusion barriers
V. Ukirde, B.P. Sharma, and M. El Bouanani, (CAARI), 2012
RBS diffusion-like elemental profiles and the degradation of thermally processed RuO 2/HfO2/Si structures
V. Ukirde, C. Duk Lim, B. P. Sharma, and M. El Bouanani, (CAARI), 2012
Effects of C irradiation on the resistivity of Ru oxide thin films
C. Duk Lim, V. Ukirde, B. P. Sharma, F. D. Mcdaniel, and M. El Bouanani, (CAARI), 2012
PUBLICATIONS
B.P. Sharma, V.C. Kummari, P.R. Poudel, B. Rout, F.D. Mcdaniel and M. El Bouanani, Effect of low energy carbon irradiation
induced amorphization in Ru thin film for the diffusion barrier for advanced Cu-interconnect (to be submitted)
B. P. Sharma, and M. El. Bouanani, Effect of plasma surface amorphization and nitridation in 5 nm Ru thin film for the
application in barrier for advanced Cu-interconnect (to be submitted)
B. P. Sharma, and M. El. Bouanani, Investigation of low aluminum doping induced near amorphous nitrided Ru film growth
for the application of advanced copper metallization (to be submitted)
P. R. Poudel, P. P. Poudel, B.P. Sharma, J.Y. Hwang, B. Rout, M. El Bouanani, F.D. McDaniel, An investigation to synthesize
buried layer of β-SiC in Si (100) by multiple energy carbon ion implantations, Thin Solid Films, Volume 524, 1 December
2012, Pages 35-38
PROFESSIONAL AFFILIATIONS
Member American Physical Society
Life member of Nepal Physical Society
BED P SHARMA (*********@**.***.***)