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Mechancial Engineer - Research & Development

Company:
Canon Nanotechnologies Inc.
Location:
Austin, TX, 78728
Pay:
107000USD - 135000USD per year
Posted:
June 16, 2025
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Description:

Job Description

Position Summary

Mechanical/Electrical engineer or equivalent capable of concept/prototype development of high precision electro-mechanical actuation/control systems for nano-imprint stepper and related technologies. Project management skills are highly desirable.

Essential Functions

Development and analysis of precision mechanism designs materializing into production oriented electro-mechanical systems

Research oriented prototype development including design/control/software

Apply engineering analysis including FEA and other methodology

Responsible for experimental set up, testing, and verification

Communicate technical details across engineering groups and with vendors on a regular basis

Sustaining engineering/execution engineering within research activity

Contribute to intellectual property generation

Project management skills especially in product lifecycle management

Design for manufacturability and serviceability

Qualifications

Education

Ph.D. or equivalent with precision industry experience

MS in ME/EE or equivalent with 5+ years of research experience related with semiconductor/precision engineering

Desired Skills

High precision motion control/sensing experience

NX or other CAD experience

Signal processing with structural/vibration analysis

Nano imprinting or nano patterning

C++ based tool control software development

Company Description

Canon Nanotechnologies located in Austin, Texas was formed when Canon acquired the Molecular Imprints’ semiconductor business unit in 2014. Canon Nanotechnologies, together with Canon, is the market and technology leader for high-resolution, low cost-of-ownership nanoimprint lithography systems and solutions for the semiconductor industry. Canon Nanotechnologies systems feature its innovative Jet and Flash Imprint Lithography (J-FIL) technology to help create the sub-20nm required in today’s state-of-the-art semiconductor memory devices. (

Full-time

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