Curriculum vitae

Dr. Reji Thomas

Research Faculty, Department of Physics,

University of Puerto Rico, Rio Piedras Campus, P.O.Box 70377,

San Juan, PR-00936-8377, USA.

Phone: +1-787-***-****

Email: zo6zwl@r.postjobfree.com

OBJECTIVE: Seeking a challenging opportunity in the field of Semiconductor process development/process integration/Materials and/or research.

VISA STATUS: J1 with waiver granted from home country (India) and U.S. Citizenship and Immigration Services (USCIS)

EDUCATION

Ph.D.1999 (Physics): Indian Institute of Technology, Delhi, India. Thesis title: “sol-gel processing and characterization of Ferroelectric thin films”

M.Sc.1992 (Physics): Cochin University of Science and Technology, Kerala, India. Thesis Title “E-beam evaporated CERMET thin films and Optical Characterization”

B.Sc.1989 (Physics): Mahatma Gandhi University, Kottayam, Kerala, India.

WORK/RESEARCH EXPERIENCE

2007/1- till date : Research Faculty, Department of Physics, University of Puerto Rico, Rio Piedras Campus, San Juan, PR00931, USA.

2002/10 – 2006/12 : Research Scientist, Institute for Solid-state research (IFF), Research Center Juelich (FZJ), Juelich-52428, Germany.

2000/10– 2002/10 : JSPS Fellow, National Institute of Advanced Industrial Science and Technology (AIST- Kansai), Ikeda, Osaka, Japan.

1999/12– 2000/8 : Research Associate, Earth and Engg. Science, Pennsylvania State University, PA, USA.

1998/5 – 1999/12 : Project Scientist, Department of Physics, Indian Institute of Technology, New Delhi, India.

RESEARCH INTERESTS

Functional electro-ceramic thin films; chemical solution deposition, RF- magnetron sputtering, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD), 3D conformal thin film coating on stacks and trenches, Novel high-k materials for alternate gate-oxide for complimentary metal oxide semiconductor (CMOS) process, High k material for dynamic random access memory (DRAM) applications, Ferroelectric thin films for Non-volatile random access memory (NVRAM) applications, Voltage tunable dielectric materials for microwave applications. Current recent research interest also includes Li-ion rechargeable battery, multiferroics, spintronic and high energy density capacitor materials developments.

PROFESSIONAL ACTIVITIES

• Referee; Applied Physics Letters, J. Appl. Phys., J. Electrochemical society, Electrochemical solid-state Letters, Thin solid films, J. Material Research.

• Member Electrochemical society (ECS).

• Member Material Research Society (MRS).

• Teaching and guiding undergraduate/graduate students.

• Writing research proposals to DFG, NSF, DoE, DoD etc.

• Collaboration with IMEC (Belgium) on the high-k research for DRAM and logic devices.

RESEARCH EXPERIENCE

1. High-k materials for Dynamic Random Access Memory (DRAM):

High permittivity (high-k) materials have been investigated for many years and are thought to be the preamble of new dielectrics to be integrated into a CMOS device. Their use as the capacitor’s dielectric is a milestone in the development of future memory generations by replacing the conventional oxide/nitride/oxide (ONO) dielectric layers. Higher k is especially required for future DRAM modules, and the high-k material Barium-Strontium Titanate, BST, in a stoichiometry from Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is considered to be a promising candidate to enter the DRAM manufacturing process. Produced in thin films, BST has a high permittivity, between 100-400, thus allowing the design of the cell in simple stack structure for the future Gbit DRAM generation.

I was involved in the preparations of high-k materials (Ba, Sr) TiO3, SrTa2O6, and TiO2 for DRAM application by liquid injection metalorganic chemical vapor deposition (MOCVD) with a high throughput industry friendly production unit (AIXTRON 2600G3)

• Process optimization, testing of precursors, compatibility with CMOS process

• Nucleation and growth on Pt (111)/SiOx/Si substrates.

• Conformal deposition on trenches

• Composition and structural characterization

• Morphology and electrical characterization

2. High-k materials for alternate gate-oxide applications:

New dielectric materials with sufficiently high dielectric constant (high-k) are very urgently needed in the industry for the < 22 nm Technology-node Logic Devices with a sub-nanometer equivalent oxide thickness. Structural invariance of the thin gate oxide layer within CMOS process thermal budget is preserved with SiO2 ( r=3.9), SiON ( r=7.0) and now with HfSiON ( r=12.0). However, in near future presently used HfSiON cannot serve as a gate oxide to follow the Moore’s law set by the semiconductor industry.

I have substantial experience in the high-k gate oxides for the replacement of SiO2 or SiON in the deep sub-micron technology node.

• Ultra low thickness DyScO3, HfO2, ZrO2, TiO2, SrTa2O6 films on Si substrate by MOCVD and atomic layer deposition (ALD) under clean room conditions.

• Novel precursor testing with direct collaboration with various companies and process control.

• Photolithography and patterning by liftoff.

• Reactive ion-beam etching.

• Clean room (100-1000).

• Metal-oxide- semiconductor testing of the gate stacks.

3. Multi-component ferroelectrics thin films:

When replacing a capacitor’s dielectric in the DRAM by a ferroelectric material it is possible to create nonvolatile memory, so called FeRAMs. An important challenge for the introduction of these materials into the Gbit generation arises from the increasingly complicated wafer processing. Robust and sophisticated tools are required to make this technology less sensitive to processing variation. The integration aspects have to be considered to reduce thermal budget, while still allowing homogenous and conformal deposition. In addition, new problems arise from the promotion of interdiffusion of the different elements during post-processing, which can affect the operation of the storage capacitor and the access transistor.

Well experienced in the preparation and characterization of ferroelectric thin films by chemical solution deposition, RF magnetron sputtering and MOCVD.

• Setting up the laboratory for the thin film deposition by CSD.

• PbTiO3, BaTiO3, Pb(ZrTi)O3, (Pb, La)(ZrTi)O3.

• Effect of seed layers on the perovskite crystallization.

• Realization of high growth rate in sputtering.

• Size effect and process conditions on the dielectric and ferroelectric properties.

• Study of structural and morphological evolution.

4. Li-ion rechargeable battery materials

Realization of inexpensive, environmentally benign, and safe high-power Li-ion rechargeable batteries is of great interest. In this field, I’m closely working with the group, most of them pursuing their PhD program in the department of Physics, UPR.

• Layer structure cathode: Ni-substituted LiMnO2; Ni and Co substituted LiMnO2

• Olivine structure cathode: LiFePO4, nano networking to improve the rate capability.

Understanding the size effect and conductive coating concept on the cathode material performances

• Solid electrolyte.

Ionic transport behavior in polymer electrolyte.

5. Material Characterization:

Familiar with various characterization tools: X-ray diffraction (XRD), X-ray reflectance (XRR), X-ray fluorescence (XRF), Rutherford back scattering (RBS), Time of Flight secondary mass spectroscopy (TOF-SIMS), Transmission electron microscopy (TEM), Atomic force Microscopy (AFM), Scanning electron microscopy (SEM).Electrical and ferroelectric measurements of metal-insulator- metal & metal-insulator- semiconductor structures.

AWARDS AND FELLOWSHIPS

1991: Qualified National Eligibility Test (NET)

1991: Council of Science and Industrial Research (CSIR) award.

2000: JSPS Fellowship from Japan Science and Technology Corporation (JST).

RESEARCH PROJECT (Involved in writing, PI and Co-PI)

1. Tailored Intramolecular Adduct Stabilised Alkoxide and Amide Precursors for MOCVD of Oxide Ferroelectric Thin Film Structures, Anjana Devi, P. Ehrhart and R.Waser, Antrag auf Gewährung einer Sachbeihilfe Fortsetzungsantrag innerhalb des Schwerpunktprogramms 1119 (2002).

2. Development and Understanding of Multifunctional Nanostructured Spintronic and Magnetoelectric Materials; R. S. Katiyar, M. Gomez, W. Otaño, G. Morell, O. Perales, M.S Tomar, L. Fonseca, Y. Ishikawa, V. Makrov, R. Palai, and R. Thomas; DOE-EPSCoR Implementation Award (2008).

3. SPACE EXPLORATION ENABLING POWER SYSTEMS: Partnership to Develop the Fundamental Science at UPR and Perform the Corresponding Proof-of-Concept at NASA GRC; R. Cabrera, R. S. Katiyar, Y. Ishikawa, NASA-EPSCoR (2008).

4. Novel Ceramic Glass Composites for Deep Ocean Uninterruptible Power Storage, Doug Chrisey, R. Katiyar, R. Palai, A. Kumar, R. Thomas, DoD-ONR (2010).

5. Design and Development of Novel Room Temperature Magnetoelectric Multiferroics for Multifunctional Devices” R. Katiyar, A. Kumar, R. Thomas, DoD-MSI (2011)

6. Materials World Network: Development of Novel High-k Gate Oxides and Multifunctional Gate Stacks for the < 22 nm Technology-node Logic and Memory Devices” R. Thomas, R.S. Katiyar, H. Kohlstedt, J. Schubert , NSF 2010 (Pending).

7. Renewal Submission for Office of Science Grant: Development and Understanding of Multifunctional Nanostructures for Spintronics and Magnetoelectrics Application, R. S. Katiyar (PI), M. Gomez, G. Morell, R. Thomas, W. Otaño, O. Perales, M.S Tomar, L. Fonseca, Y. Ishikawa, A. Kumar, V. Makrov, R. Palai, and J. Velev, DoE- EPSCoR (2011) Pending.

8. Resistive switching and Phase change materials: Development and understanding of the materials for new high density memories; R.Thomas and R.S. Katiyar, under preparations, NSF (2011).

9. Higk-k materials for gate oxide and Dynamic Random Access Memory (DRAM) applications by Atomic Layer Deposition (ALD); R.Thomas and R.S. Katiyar, under preparation DoE (2011).

REFEREES

1. Prof. Dr. Rainer Waser

Department IFF

Research Center Jülich

D-52425 Jülich.

Email: zo6zwl@r.postjobfree.com

2. Prof. J.F. Scott

Cavendish Laboratory, Department of Physics,

Cambridge CB3 0HE, U. K

Email: zo6zwl@r.postjobfree.com

4. Dr. Matty Caymax

IMEC,

Kapeldreef 75,

B-3001 Leuven, Belgium

Email: zo6zwl@r.postjobfree.com

4. Prof. H. Kohlstedt

Nanoelektronik, Technische Fakultät Kiel,

Christian-Albrechts-Universität (CAU) Kiel, Kiel 24143, Germany.

Email: zo6zwl@r.postjobfree.com

5. Dr. J. Schubert

Institute of Bio-and Nano-Systems (IBN1-IT) and JARA-Fundamentals of Future Information Technology, Research Centre Jülich, D-52425, Germany.

Email: zo6zwl@r.postjobfree.com

6. Prof. R.S. Katiyar

Department of Physics

University of Puerto Rico, Rio Piedras Campus, P.O.Box 70377

San Juan, PR-00936-8377, USA.

Email: zo6zwl@r.postjobfree.com

A. SELECTED LIST OF PUBLICATIONS( Over 70 Refereed Scientific Journals/Conf. Proceedings):

1. Overview on the resistive switching in TiO2 solid electrolyte, Doo Seok Jeong, R. Thomas and J.F. Scott, Integrated Ferroelectrics (2011) Review (accepted)

2. Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors, S.P. Pavunny, R. Thomas, T.S. Kalkur, J. Schubert, E. Fachini, and R.S. Katiyar, Proceedings of ECS Transactions, Silicon Compatible Materials, Processes, and Technologies for Advances Integrated Circuits and Emerging Applications, 35, 00, (2011) (accepted)

3. Structural and electrical properties of Lanthanum Gadolinium oxide: Ceramic and thin films for high-k application, S.P. Pavunny, R. Thomas, Nishit Murari, J. Schubert, V. Niessen, R. Luptak, T.S. Kalkur, and R.S. Katiyar, Integrated Ferroelectrics (2011) (accepted).

4. Multiferroic thin-film integration onto semiconductor devices, R.Thomas, J. F. Scott, Dwarka N Bose, and R. S. Katiyar, J. Phys.: Condens. Matter, 22, 423201 (2010) Topical Review

5. Liquid Injection MOCVD Grown Binary Oxides and Ternary Rare-Earth Oxide as Alternate Gate-Oxides for Logic Devices, R. Thomas, P. Ehrhart, R. Waser, J. Schubert, A. Devi, and R. S. Katiyar, ECS Transactions, 33 (3) 211 (2010).

6. Growth and characterization of Ti-Ta-O thin films on Si substrates by liquid injection MOCVD for high-k applications from modified titanium and tantalum precursors, Anjana Devi, M. Hellwig, D. Barreca, H. Parala, R. Thomas, H-W Becker, R. S. Katiyar, Roland A. Fischer, and Eugenio Tondello, Chemical Vapor Deposition, 16, [4-6], 157 (2010).

7. DyScO3 buffer layer for a performing Metal-Ferroelectric-Insulator-Semiconductor structure with multiferroic BiFeO3 thin film, N. M. Murari, R. Thomas, S. P. Pavunny, J. R. Calzada, and R. S. Katiyar, App. Phys. Lett., 94, 142907 (2009).

8. Metalorganic chemical vapor deposited DyScO3 buffer layer in Pt/Bi3.25Nd0.75Ti3O12/DyScO3/Si metal-ferroelectric-insulator-semiconductor diodes, R. Thomas, R. E. Melgarejo, N. M. Murari, S. P. Pavunny, and R. S. Katiyar, Solid State Communications, 149, 2013, (2009)

9. Metal-Ferroelectric-Insulator-Silicon (MFIS) Devices based on DyScO3 Buffer Layer and Bi3.25Nd0.75Ti3O12 Ferroelectrics, R. Thomas, Ricardo E. Melgarejo, Dillip K. Pradhan, Naba K. Karan, Jose J. Saavedra-Arias, and Ram S. Katiyar, ECS Transactions 13 (2) 363-371 (2008).

10. Thin films of high-k dysprosium scandate prepared by metal organic chemical vapor deposition for metal–insulator–metal capacitor applications, R. Thomas, N. K. Karan, J. J. Saavedra-Arias, N.M. Murari, R.S. Katiyar, P. Ehrhart and R. Waser, Solid State Communications 147, 332–335 (2008).

11. Stabilization of amide based complexes of Niobium and Tantalum using malonates as chelating ligands: Precursor chemistry and thin film deposition: M. Hellwig, A. Milanov, D. Barecca, J-L. Deborde, R. Thomas, M. Winter, U. Kunze, R. A. Fischer and A. Devi, Chem. Mater., 19, pp. 6077-6087 (2007).

12. Liquid injection MOCVD of TiO2 and SrTiO3 thin films from [Ti (Opri)2(tbaoac)2]: films properties and compatibility with [Sr (thd)2]: R.Thomas, R. Bhakta, P.Ehrhart and A. Devi, Surface Coatings and Technology 201, pp 9135-9140 (2007).

13. HfO2 thin films using hafnium amide based malonates complexes as CVD precursors; A.Milanov, R.Thomas, S. Spöllmann, M. Winter, P. Ehrhart, R.A. Fischer, R. Waser, and A. Devi, Surface Coatings and Technology 201, pp.9109-9116 (2007).

14. Liquid Injection MOCVD of Dysprosium Scandate Films: Deposition Characteristics and High-k Applications: R. Thomas, P. Ehrhart, M. Luysberg, M. Boese, R. Waser, M. Roeckerath, J. Schubert, S. Van Elshocht and M. Caymax, Elec. chem. soc. 154, G147-G154 (2007)

15. Thin films of ZrO2 for high-k applications from engineered alkoxide and amide based MOCVD precursors: R.Thomas, R.Bhakta, A.Milanov, U.Patil, A. Devi and P. Ehrhart, Chem. Vap. Dep. 13, 98-104(2007).

16. Thin films of HfO2 for high-k applications from engineered alkoxide and amide based MOCVD precursors: R.Thomas, E.Rije, R.Bhakta, A.Milanov, U.Patil, A. Devi, Ehrhart and R.Waser, J. Elec. chem. Soc, 154, G77-G84 (2007)

17. Synthesis and characterization of zirconium amido-guanidinato complex: a potential precursor for ZrO2 thin films: R.Bhakta, A.Milanov, M.Hellwig, D.Barreca, E.Tondello, R.Thomas, H.W.Becker, M.Winter, and A.Devi, Daltons Transactions, DOI: 10.1039/b616861b (2007).

18. Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metalorganic chemical vapour deposition: R. Thomas, P. Ehrhart, M. Luysberg, M. Boese, R. Waser, M. Wagner, J. Schubert, S. Van Elshocht, M. Caymax, App. Phy. Lett., 89, 232902 ( 2006).

19. Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO2; A.Milanov, R.Bhakta, A.Baunemann, H-W. Becker, R. Thomas, P.Ehrhart, M.Winter, and A.Devi, Inorg. Chem 45, 110**-***** (2006).

20. Zirconium dioxide thin films for high-k applications by MOCVD from novel mononuclear precursors: R. Thomas, U. Patil, P. Ehrhart, A. Devi, and R. Waser, Electrochemical Society Proceedings Volume 2005-09, pp.944-951 (2006)

21. Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor; R. Thomas, A. Milanov, R. Bhakta, U. Patil, M. Winter, P. Ehrhart, R. Waser, A. Devi, Chem. Vap. Dep. 12, 295-301 (2006)

22. MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors: U. Patil, R. Thomas, A. Milanov, R. Bhakta, P.Ehrhart,R. Waser, R. Becker, H-W. Becker, M. Winter, K. Merz, R. A. Fischer and A. Devi, Chem. Vap. Dep. 12, 172-180 (2006).

23. Electrical Properties of (Ba,Sr)TiO3 Thin Films Revisited:The Case of Chemical Vapor Deposited Films on Pt Electrodes; Peter Ehrhart, R. Thomas J. Appl. Phy. 99, 114108 (2006)

24. Mixed amide-malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2 thin films; A. Milanov, R. Bhakta, R. Thomas, P. Ehrhart, M. Winter, R. Waser, A. Devi, J. Mater. Chem., 16, 437 – 440(2006)

25. High-k dielectric materials by metalorganic chemical vapor deposition: Growth and characterization: R. Thomas, S.Regnery, P.Ehrhart, R.Waser, U.Patil, R.Bhakta and A.Devi: Ferroelectrics, 327, pp.111-119 (2005)

26. Metal Organic Chemical Vapor Deposition of (Ba,Sr)TiO3: Nucleation and Growth on Pt-(111); S. Regnery, Y. Ding, P. Ehrhart, C.L. Jia, K. Szot, R. Thomas, R. Waser, J. Appl. Phys., 98, 084904 ( 2005)

27. Comparison of Precursors for Pulsed Organometallic CVD of HfO2 High-k Dielectric Thin Films: Andrew R.Teren, R. Thomas, Peter Ehrhart, Jia-Qing He, Thin solid films 478, pp.206-217 (2005).

28. SrTa2O6 Thin Films for High-K Dielectric Applications Grown by MOCVD on Different Substrates Stephan Regnery, R. Thomas, Peter Ehrhart, Rainer Waser, J. Appl.Phys, 97, 073521 (2005).

29. MOCVD of TiO2 thin films and studies on the nature of molecular mechanism involved in the decomposition of Ti(OPri)2(tbaoac)2: R.Bhakta, R.Thomas, F.Hipler, H.Bettinger, J.Müller, P.Ehrhart and A. Devi, J. Mat. Chem, 14, 3231 - 3238(2004)

30. Mononuclear precursor for MOCVD of HfO2 thin films: A.Baunemann, R. Thomas, R.Becker, M.Winter, R.A. Fischer, P.Ehrhart, R.Waser, and A.Devi, Chem Comm, 1601-1602 (2004).

31. MOCVD of SrTa2O6 Thin Films for High-k Applications: Stephan Regnery, R.Thomas, Hans Haselier, Peter Ehrhart, Rainer Waser, Peer Lehnen, Stefan Miedl, Marcus Schumacher, Mat. Res. Soc. Symp. Proc., 811, D9.7 (2004).

B. SELECTED LIST CONFERENCE PRESENTATIONS (over 90 presentations)

1. Rare Earth Scandates and Interlanthanide Oxides for DRAM Capacitor Applications, S. P. Pavunny, R. Thomas and R. S. Katiyar, 35th International Conference & Exposition on Advanced Ceramics & Composites (ICACC), Daytona Beach, Florida, January 23-28, 2011 (Invited talk)

2. Fabrication and Electrical Characterization of Hihg-k LaGdO3 based MOSFET devices, S. P. Pavunny, R. Thomas, T. S. Kalkur, J. Schubert, and R. S. Katiyar, 219th ECS Meeting, Montreal, QC, Canada, May 1-6, 2011

3. Stabilization of the high-k tetragonal phase in (Hf,Zr)O3 ceramics with Dy and Ta co-substitution, Reji Thomas, Arum Kumar, Shojan P. Pavunny, Juergen Schubert, and R. S. Katiyar, Electronic Materials and Applications 2011, Royal Plaza in the Walt Disney World Resort, Orlando, Florida, January 19-21, 2011

4. Electrical Characteristics of Metal-Ferroelectric (BiFeO3) – high-k Insulator (LaGdO3) – Semiconductor Capacitors and Field-Effect Transistors, R. Thomas, T. S. Kalkur, S. P. Pavunny, N. M. Murari, and R. S. Katiyar, 217th ECS meeting, Vancouver, Canada, April 25-30, 2010

5. Rare-earth oxides as high-k gate-oxide materials for logic devices, R. Thomas, P Ehrhart, R. Waser, J. Schubert, and R. S. Katiyar, International Symposium on Integrated Functionalities (ISIF), San Juan, Puerto Rico (USA), June 13-16, 2010 ( Invited talk)

6. Liquid injection MOCVD grown binary oxides and ternary rare-earth oxide as alternate gate-oxide for logic devices, R. Thomas, M. Tomar, and R. S. Katiyar, 218th ECS Meeting, Las Vegas, Nevada, (USA), October 10-15, 2010

7. Thermal stability of high-k LaGdO3 thin films grown by pulsed laser deposition, S. P. Pavunny, R. Thomas, J. Schubert, and R. S. Katiyar, Material Science and Technology (MS&T’10), Houston, Texas, October 17-21, 2010

8. Interlanthanide LaGdO3 ceramic and thin films for high-K applications, S. P. Pavunny, R. Thomas, T. S. Kalkul, J. Schubert, and R. S. Katiyar, International Symposium on Integrated Functionalities (ISIF), San Juan, Puerto Rico (USA), June 13-16, 2010

9. Band gap and wavelength dependent refractive indices of pulsed laser deposited LaGdO3 high-k dielectric films on quartz substrates, Shojan P. Pavunny, R. Thomas, and R. S. Katiyar, APS March Meeting, Portland, OR, March 15-19, 2010

10. Ferroelectric and multiferroic-gate Si Transistor for high-density non-volatile memories, R. Thomas, Q. Zhang, T. S. Kalkur, and R. S. Katiyar, Materials Research Society Spring Meeting, San Francisco, CA, April 5-9, 2010

11. High-K Dielectrics as an Alternate Gate-oxide and Buffer Layer for Logic and Memory Devices, R. Thomas, P. Ehrhart, R. Waser, J. Schubert, and R. S. Katiyar, XVIII International Materials Researchs Congress 2009, Cancún, Mexico, 16 – 21 August, 2009 (Invited talk)

12. High-k dielectric, ferroelectric/multiferroic and semiconductor heterostructures for memory applications, R. Thomas, N. M. Murari, R. Melgarejo, and R. S. Katiyar, Villa Conference on Interactions Among Nanostructures, St.Thomas, U.S. Virgin Islands September 13-18th 2009

13. High-k Rare-earth Scandate for Gate-oxide Application, R. Thomas, N. K. Karan, S. P. Pavunny, and R. S. Katiyar, International Symposium on Integrated Ferroelectric and Functionalities (ISIF2), Colorado Springs, Colorado USA, September 27 – Octuber 1, 2009

14. MOCVD grown ternary Rare Earth Oxide as an alternative gate-oxide and buffer layer for logic and memory devices, Reji Thomas and R. S. Katiyar, DoE Synthesis and Processing Contractors Meeting, Airlie Conference Center, Warrenton, VA, October 25-28, 2009

15. Multifunctional nanostructure for magnetoelectric and spintronics applications, R. S. Katiyar, M. Gómez, G. Morrel, L. Fonseca, W. Otano, O. Perales, M. S. Thomar, Y. Ishikawa, R. Palai, R. Thomas, Ashok Kumar, and V. Makrov, DoE Synthesis and Processing Contractors Meeting, Airlie Conference Center, Warrenton, VA, October 25-28, 2009.

16. Leakage current and electrical conduction mechanism in MOCVD grown high- DyScO3 on p-Si (100) substrates, R. Thomas, N. M. Murari, S. P. Pavunny, and R. S. Katiyar, MS&T09 (Material Science and Technology 2009 Conference and Exhibition), American Ceramic Society, Pittsburgh, Pennsylvania, Oct 25-29, 2009

17. Electrical properties of Cr substituted multiferroic BiFeO3 thin films and the 1T-FET non-volatile memory devices based on BFCO/DSO/Si heterostructures, N. M. Murari, R. Thomas, and R. S. Katiyar, Materials Research Society Fall Meeting, Boston, MA, Nov 30 - Dec 4, 2009

18. Pt/BiFeO3/DyScO3/Si MFIS structures for FERAM applications, N.M.Murari, R. Thomas and R.S. Katiyar, MS &T, Oct.5-9, Pittsburg, PA, USA (2008).

19. MIS and MFIS Devices: DyScO3 as a gate-oxide and buffer-layer, R. Melgarejo, N. K. Karan, J. Saavedra-Arias, D. K. Pradhan, R. Thomas, and R S. Katiyar, APS Meeting (2008).

20. Metal-Ferroelectric-Insulator-Silicon (MFIS) Devices based on DyScO3 Buffer Layer and Bi3.25Nd0.75Ti3O12 Ferroelectrics, R. Thomas, Ricardo E. Melgarejo, Dillip K. Pradhan, Naba K. Karan, Jose J. Saavedra-Arias, and Ram S. Katiyar, ECS Meeting, Phoenix, AZ. May (2008).

21. Dysprosium Scandate thin Films Prepared by Metal Organic Chemical Vapor Deposition on Pt/TiOx/SiO2/Si Substrates for MIM Capacitor Applications; R.Thomas, N. K. Karan, P.Ehrhart, R. Waser and R.S.Katiyar, ECS Meeting Washington (2007).

22. Characterization of Fully Silicided Metal Gates on HfO2; E. Rije, R. Thomas, Q.-T. Zhao, P. Ehrhart and S. Mantl, MAM 2005, Materials for Advanced Metallization, Dresden, Germany.

23. Zirconim dioxide thin films for high-k applications by MOCVD from novel mononuclear precursors: R. Thomas, Urmila Patil, Peter Ehrhart, Anjana Devi and Rainer Waser, EUROCVD-15, 2005, Bochum, Germany.

24. New tailored precursors for the MOCVD of Group IVB metal oxides: High k Application: R.Thomas, P.Ehrhart, R.Bhakta, U.Patil, A.Devi and R.Waser MRS Spring Meeting 2005.

25. Electrical properties of HfO2/SiOx, HfO2/SiO2, and HfO2/SiON stacks on Si as an alternate high-k gate oxide material: R.Thomas, E.Rije, P.Ehrhart, S.Mantl and R.Waser, MRS Spring Meeting 2005.

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