Curriculum Vitae

NASR-EDDINE MEDELCI-DJEZZAR, Ph.D.

**** ******** *******, ***#***

Houston, TX 77077

Phone: 281-***-****

E-mail: ea0w4i@r.postjobfree.com

EDUCATION:

**** **.*. ** ******ical Engineering, University of Houston, USA

1981 M.S. of Electrical Engineering, University of Missouri –Rolla, USA

1978 B.S. of Physics, University of Oran, Algeria

PROFESSIONAL EXPERIENCE:

1999 - 2010 Research Scientist

Electrical and Computer Engineering Department/ Center for Advanced

Materials/ University of Houston, USA

1997- 1999 Research Associate

Space Vacuum Epitaxy Center

University of Houston, USA

1991- 1996 Research Assistant

Space Vacuum Epitaxy Center

University of Houston, USA

TEACHING EXPERIENCE:

Fall 2004 - 2005 Adjunct Faculty in Physics

Houston Community College – Northwest –

Fall 2001 - 2004 Lecturer

Physics Department

University of Houston, USA

1981 - 1991 Lecturer

Algerian National Institute of Electricity and Electronics

Boumerdes, Algeria

1/1980 – 5/1980 Teaching Assistant

Electrical Engineering Department, University of Missouri-Rolla, USA

REFERENCES:

Prof. Abdelhak Bensaoula Center for Advanced Materials, University of Houston

724 Science and Research Building 1, Houston, TX 77204-5004

Phone: 713-***-****

E-mail: ea0w4i@r.postjobfree.com

Prof . Alexander Freundlich Center for Advanced Materials, University of Houston

724 Science and Reseach Building1, Houston, TX 77204-5004

Phone: 713-***-****

Email: ea0w4i@r.postjobfree.com

Prof. Wanda Zagozdzon-Wosik Electrical and Computer Engineering Department

University of Houston, 4800 Calhoun Road, Houston, TX 77204

Phone: 713-***-****

E-mail: ea0w4i@r.postjobfree.com

PUBLICATIONS:

1- D. Starikov, C. Boney, N. Medelci, J.-W. UM, and A. Bensaoula; “Experimental simulation of Intergrated optoelectronic sensors based on III ntrides”; J. Vac. Soc. Technol. B 20(5), 1815-1820(2002).

2- N. Medelci, A. Tempez, D. Starikov, N. Badi, I. Berishev, and A. Bensaoula; ”Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas”; Journal of ELECTRONIC MATERIALS 29(9), 1079-1083(2002).

3- D. Starikov, I. Berishev, J.-W. Um, N. Badi, N. Medelci, A. Tempez, and A. Bensaoula,“Diode structures based on p-GaN for optoelectromic applications in the near-Ultraviolet range of the spectrum”, J. Vac, Soc. Technol.A 18(6), 2620-2623 (2000).

4- E. Kim, A. Tempez, N. Medelci, I. Berichev, and A. Bensaoula;“Selective Area Growth of GaN on Si(111) by Chemical Beam Epitaxy”; J. Vac. Soc. Technol. A 18(4), 1130-1134 (2000).

5- N. Medelci, A. Tempez, D. Starikov, I. Berishev, and A. Bensaoula; “Photoassisted RIE of GaN in BCl3/CI2/N2”; Mat. Res. Soc. Symp. 572, 535-540 (1999).

6- A. Tempez, N. Medelci, N. Badi, I. Brichev, D. Starikov, A. Bensaoula; “Photoenhanced RIE of III-V Nitrides in BCl3/CI2/Ar/N2 ; Plasmas”. J. Vac. Soc. Technol. A 17(4), 2209 (1999).

7- D. Starikov, N. Badi, I. Berichev, N. Medelci, O. Kameli, M. Sayhi, V. Zomorrodian, and A. Bensaoula, “MIS Schottky Barrier Structures Fabricated Using Interfacial BN Layers Grown on GaN and SiC for Opoelectronic Device Applications”, J. Vac. Soc. Technol. A 17(4), 1235-1238 (1999).

8- N. Medelci, A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, and A. Bensaoula; “Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in CI2 and BCI3/Cl2/Ar Chemistries”, Mat. Res. Soc. Symp. Proc 512, 285 (1980).

9- D. Starikov, I. Berichev, N. Medelci, Ester Kim, Ye Wang, and A. Bensaoula; “A hot Electrons-Based Wide Spectrum on-Orit Optical Calibration Source”, Space Technology and Applications International Forum, Albuquerque, New Mexico, 1998, AIP Conference Proceedings, Part Two, 648-653 (19980.

10- N. Badi, A. Tempez, D. Starikov, V. Zommorrodian, N. Medelci, A. Bensaoula, J. Kullik, S. Lee, S. Perry, S.S. Ageev, S.V. Garnov, M.V. Ugarov, S.M. Klimentov, V.N. Tokarev, K. Waters, and A. Schultz; “Boron Carbon Nitride Materials for Tribological and High Temperature Device Applications “, Space Technology and Applicationa International Forum, Albuquerque, New Mexico, 1998, AIP Conference Proceedings, Part Two, 648-653 (1998).

11- M.F. Vilela, N. Medelci, A. Bensaoula, A. Freundlich and P. Renaud, First INP tunnel, junctions grown by Chemical Beam Epitaxy “, J. Crys. Growth 164, 465-469 (1996).

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