Liang Tang

Birck Nanotechnology Center 765-***-****

Purdue University

West Lafayette,Indiana 47906 acgrxs@r.postjobfree.com

Education

- 2014 Ph.D in Semiconductor Physics, Purdue University

Thesis focus on design,process and fabrication of III-V semiconductor devices

- 2005 B.Sc in Physics, and B.Sc in Mathematics, Peking University, Beijing

China

Experience

2007-2014 Research Assistant, III-V semiconductor laboratory affiliated Birck

Nanotechnology Center at Purdue University

- Design and development of GaN based wide bandgap electronic transistors and

optoelectronic devices and fabrication of GaAs HEMTs

- Installation and maintenance of the ultra high vacuum Nitride Molecular Beam Epitaxy

system and processing equipments.

- Design, epitaxy, processing and optimization of III-N device structures on both native

substrates and Si substrates grown with MBE and MOCVD.

- Characterization and testing of device quality and defects using AFM, XRD, XRR,

Ellipsometry, PL, SIMS, SEM, TEM, EDS/EDX, FTIR, CV, IV etc

- Device simulation using Matlab, Comsol, Silvaco, Crosslight, Ansys etc

- Installation of ultra-low temperature, dilution fridge system( 7mKelvin)

- Design of high sensitivity in-situ electron transport measurement system, including Hall

measurement, permissivity and susceptibility measurement, etc.

- Reviewer for Applied Physics Letters and Optics Express

Laboratory Skills

- Six year experience of installing and maintaining of nitride epitaxy systems, Growth in

Riber Molecular Beam Epitaxy (MBE) system and Aixtron MOCVD system

- Repair and maintenance of vacuum reaction chambers, Ti Sublimation Pumps, Ion

Pumps, CryoPumps, Turbo Pumps, High Voltage system, Residual Gas Analyzer (RGA),

management of cryogenic Liquid Nitrogen and Liquid Helium system, RF plasma source

-Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-Ray

Diffraction, RHEED, Photoluminescence, Hall Measurement, Fourier Transform Infrared

Spectroscopy(FTIR), Mass Spectroscopy

- Titan & JEOL 2010 FEG TEM: HRTEM imaging, energy dispersive spectrometer

(EDS/EDX), diffraction contrast & defect analysis, and electron energy-loss spectrometers

(EELS) mapping, cross-section sample preparation by FIB

- Wafer dicing, Polishing,Masking, lithography, Metallization, Dry Etching,Wet Etching,

Rapid Thermal Annealing, Wire Bonding, PECVD,PVD

- Phase lock-in amplifier, Noise Current, Photoresponsivity & Photodetectivity, - Electrical

testing by Oscilloscope, Spectrum analyzer, Parameter Analyzer, logic analyzer, network analyzer

etc

- Automated testing on NI ATE platform using Labview and TestS tand

- simulation and optimization by Tcad including Matlab, Comsol multiphysics, Crosslight,

Synopsys Sentaurus, and Silvaco, ADS, Ansys, Cadence

- FORTRAN, C,C++, python, Unix, SolidWorks, Autocad, Labview, SPC,DOE, SAS JMP,

Excel,, Comsol, MS Office.

Patent:

US 201******** : Thin and Flexible Gallium Nitride and Method of Making the Same

http://www.google.com/patents/US20130140517

Selected Research Highlights

- Invented and patented the method to obtain high quality submicron thick free

standing flexible GaN membrane by laser lift off method

- Developed the world?s first reproducible nitride Resonant Tunneling Diode (RTD)

on polar nitride substrate

- Developed the world?s highest quality InAlN/GaN superlattice structures lattice

matched to GaN substrate

- Have firstly defined the optimal MBE growth condition to obtain atomically

smooth growth morphology on m-plane GaN substrate.

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