VIKAS LAKHOTIA

***** ******* ******, ********, ** 91354 908-***-****

acfhqt@r.postjobfree.com

Accomplished professional with over 18 years experience in advanced

semiconductor technology and engineering product development, including 10

years in leadership and management roles. Technical expertise based on

strong educational foundation: M.S. in Electrical Eng. and Chemical Eng.;

Ph.D. in Chemical Eng. Knowledge leader, active learner, creative and

efficient problem solver, results oriented program manager, recognized for

flexibility and hard work in achieving company goals. Develop collaborative

programs with key stakeholders for technology development and new product

introduction. Responsible for engineering support for all stages of

operation, from start-up to ramp-up to high volume production.

( Process & Product Development ( Project Management /

Product Certification

( SPC / DOE / FMEA ( Six Sigma / Lean

Manufacturing

( Statistical Analysis / Yield Management ( Technology Transfer

/ Production Ramp

( Technology & Product Presentation ( Team leader

PROFESSIONAL EXPERIENCE

H2scan Inc., Valencia, CA 2008 -

Present

Director - Engineering & Technology

Leading a multi-disciplinary team of engineers and researchers in

developing advanced technical products. Responsible for technology

innovation, product development, operations ramp, strategic partnership,

and technical marketing.

( Process flow development in clean-room of wafers; new materials

selection, product development and technology transfer to new facility to

achieve higher yields.

( Responsible for engineering staffing, defining the technology roadmap,

upgrading the patent portfolio, quality improvement, product certification

and production support activities.

( Setup joint development programs with strategic partners and key

customers to meet new market applications in medical, chemical,

semiconductor, energy, and defense industries.

( Scaled-up processes from R&D for release to commercial release.

Implemented stage gate process and DFMEA on all new product introductions.

( Introduced several key ideas to improve product performance; patents

granted. Advanced signal processing and systems level approach enabled

access to new markets.

Anadigics Inc., Warren, NJ 2007 -

2008

Director - Process Engineering

Assembled, motivated and directed a team of 30 engineers and technicians in

an analog GaAs fab with focus on tool selection, process qualification and

fab ramp.

( Aggressively ramped fab capacity by over 40% in under a year by

qualifying new tools and resolving key bottlenecks. Responsible for Thin

Film Metals, Dielectrics, Anneal, etc.

( Initiated and completed cost reduction projects that saved the company

over $5M/year.

( Implemented training programs that focused on KPI, SPC, OCAP resulting in

overall scrap reduction of over 25%.

( To avoid business interruption, qualified new 703 photoresist to replace

discontinued 6210 resist.

( New metrology for defect control and thickness measurement implemented to

contain yield excursion and improve yields from 97% to 99.3%.

Maxim Integrated Products, OR & TX

1998 - 2007

Manager - Process Engineering - San Antonio, TX (2004 -2007)

Responsible for fab start-up, technology transfer, process development,

recruiting and managing engineering activities in an 8" BiCMOS Si fab.

( Completed process start-ups of over 140 tools to support steep capacity

ramp-up from 1M to 5.5M moves/quarter. First product lot yielded over 90%.

( Targeted saving to result in costs that were 30% lower than the other US

sites of Maxim, and were comparable to overseas foundries. Completed ISO

certification of fab.

( Developed an innovative solution for eliminating gate oxide bath life

impact. Characterized various process modules using SEM, TEM, ICPMS, and

AFM.

( Solved yield problems related to polysilicon divot formation, BPSG flow

process resulting in CrSi resistor mismatch, etc.

Senior Process Engineer - Beaverton, OR (1998 -2004)

Responsible for multiple CVD and Metal sputter deposition. Based on

performance, given increasing supervisory and then managerial

responsibilities.

( Conducted start-up of several tools across diverse areas including PECVD,

Metal deposition, and Cleans. Managed SPC and yield improvement activities.

( Accomplished DOE of MIM Nitride to achieve ultra high uniformity, thin

dielectric films with high breakdown and low leakage for RF applications.

( Championed fab-matching activities that identified root cause of low Gate

Oxide Integrity.

Integrated Device Technology, Hillsboro, OR

1995 - 1998

Senior Process Engineer

Completed start-up of a brand new state-of-the-art 8" fab. Primarily

responsible for process transfer of several thin film modules including

Centura poly-Si/WSix deposition.

( Provided engineering support for all Thin Film processes including Al,

Ti, TiN, W, poly-Si, WSi, BPSG, SiON and TEOS based oxides.

( Solved several yield impacting process problems including erratic P

doping in polysilicon and polysilicon/tungsten silicide delamination.

( Developed new metrology applications to measure product wafers and reduce

test wafer usage.

Motorola Inc., Austin, TX

1992, 1994

Summer Intern: Yield enhancement and Diffusion modules.

( Utilized SEM, EDAX and FIB to characterize defects. KLA and Leica auto-

defect classification project completed.

( Improved gate oxide reliability by developing an oxynitride process;

designed a unique characterization procedure for process control. DOE on in-

situ doped polysilicon completed.

University of Texas, Austin, TX

1990 - 1995

Research Assistant: MOCVD of GaAs and GaN epitaxial films.

( Designed custom ceramics enclosures for highly targeted substrate

heating. Studied low-temperature high-vacuum film growth using XRD, SEM and

AFM.

( Investigated growth mechanism of compound semiconductors from

organometallic precursors by AES, XPS, and TPD.

University of Buffalo, New York, NY

1988 - 1990

Research Assistant: CVD of ceramic films using batch and continuous

reactor.

( Designed and built an atmospheric CVD system for deposition of Titanium

diboride and SiC for manufacture of high strength ceramic carbon fibers.

( Characterized mechanical properties, completed kinetic and thermodynamic

analysis of deposition process.

EDUCATION

M.S. Electrical Engineering, Oregon Graduate Institute, Portland, OR (2003)

Ph.D. Chemical Engineering, "Chemical Beam Epitaxy of III-V Compound

Semiconductors Using Single Source precursors", Univ. of Texas, Austin, TX

(1995)

M.S. Chemical Engineering, "Chemical Vapor Deposition of Titanium

diboride", State Univ. of NY, Buffalo, NY (1990)

B.Tech. Chemical Engineering, Alagappa College of Technology, Chennai,

India (1988)

MBA, University of Chicago, IL (2 quarters completed; on hold)

PATENTS AND PUBLICATIONS

( "Techniques for calculating gas concentration in fluid environment",

Patent No. 8,265,881 - (2012) - Patent.

( "Drift and Cross-Sensitivity Reduction in Solid-State Hydrogen Sensors",

Gases and Instruments, Vol. 7 Issue 3, pg. 12-16 - (2013)

( "Bisamido azides of Gallium, Aluminum, and Indium and their use as

precursors for the Growth of Nitride Films", Patent No.: 5,675,028 (1997) -

Patent.

( "Growth and characterization of GaAs films from

Tris(di-tert-butylarsino)gallane", Chem. Mater. Vol. 6, No. 6, (1994).

( "GaN Film Growth Using Single-Source Precursors" Chem. Mater. Vol. 7,

No. 3, (1995).

( "New single-source precursor approach to Gallium Nitride". J. Am. Chem.

Soc. 117(21) (1995).

( "Evaluation of Interfacial Nitrogen Concentration of RTP oxynitrides by

reoxidation" J. Electrochem. Soc. Vol. 140, No. 6, (1993).

( "Furnace formation of silicon oxynitrides thin dielectrics in Nitrous

oxide (N2O): The role of nitric oxide (NO)" J. Appl. Phys. 75, 1811,

(1994).

( "Relationhip between growth conditions, nitrogen profile, and charge to

breakdown of gate oxynitrides grown from pure N2O" Appl. Phys. Lett. 63

(2) (1993).

( "Material characterization of Chemical Vapor Deposited TiB2 Fibers".

Scientific Commons (1998).

PERSONAL

( US Citizen ( Willing to travel

extensively

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