Shahrzad Salemi

E-mail: acfe4l@r.postjobfree.com

Cell-Phone: 301-***-****

Objective:

To acquire a challenging position, where I can utilize my educational

background (in reliability, failure analysis of

microelectronic/optoelectronic device/system, accelerating testing, and

risk assessment), professional experiences, strong experimental background,

analytical and problem-solving skills to gain further experience while

enhancing the reliability of devices and systems.

Education:

Postdoctoral, Vanderbilt University, Nashville, TN since

summer 2012

PhD of Reliability (microelectronic devices/systems)

Engineering

University of Maryland, College Park, MD

Summer 2012

Master of Science in Reliability

(microelectronic devices/systems)

University of Maryland, College Park, MD, 2007

Physics of Failure of Microelectronic Devices (thesis titled

"Physics-of-Failure Based Handbook of Microelectronic Systems"

has been published by UMD, DoD, and RIAC in 2008.)

Master of Science in Laser Optics

Tehran

Bachelors of Science in Solid State Physics

Shahid Beheshti University, Tehran

Working Experience (Experimental, and Analysis):

Failure Analysis and Related Measurement:

- Measurement and Analysis of MOSFET, MOS, Flash Memory device:

NBITI, TDDB, HCI, NBTI

-The Impact of Defects on Mobility and Reliability of Si, SiC,

GaN Devices (Mobility, and Noise)

-Lifetime Measurement and Analysis of Laser Diodes (LD), Light

Emitting Diodes (LED), and detectors (based on Temperature, and

Current)

-Estimation of Failure, Pit Density, Precipitations on Grain

Boundaries and Metallographic Pattern by Etching Semiconductor,

and Metallic Materials

-GaN HEMT Device Physics of Failure Analysis

-The Impact of Quantum Mechanical Phenomena on UTB MOSFET

Testing and Characterization Equipment:

-Scanning Electron Microscopy (SEM)

-Transition Electron Microscopy (TEM)

-Confocal Laser Scanning Microscope (CLSM)

-Photon Emission Microscopy (EMMI)

-Thermal Induced Voltage Alterations (TIVA)

-Four-Point Probe

-Capacitance-Voltage Measurement

-UV Spectroscopy

-Laser, and LED Characterization

I-V Characteristics

Spectrum Analyzing

-Photodetector Characterization

I-V Characteristics with Fiber Coupling

Fabrication (Semiconductor Laser, LED, and Detector Fabrication and

Research Group):

-GaAs Laser and LED

-LPE Crystal Growth

-Ohmic Contact Laboratory (P and N sides)

-Packaging

-Optical Coupling

-InP Avalanche Photodiode (APD)

-LPE Crystal Growth

-Ohmic Contact Laboratory (P and N sides)

-Sputtering: Anti-Reflection Layer

-Packaging

-Optical Coupling

-Silicon Single Crystal Growth: Czochralski Method

Working Experience (Academic):

- Teacher Assistant, University of Maryland, College Park:

. Electronic laboratory ENME350,

. Vibrations ENME361,

. Dynamics ENME460,

. Mathematical Logic,

- Part-Time Lecturer, Azad University, Tehran:

. General Physics,

. History of Modern Physics,

. Philosophical Concepts of Quantum Mechanics,

. Technical English for Physics Students.

- Research Assistant, Mechanical Engineering, Reliability

Program, University of Maryland, College Park, MD

Software Skills:

Reliability Tools/Data Acquisition

-Relex

-ReliaSoft

-Weibull++

Operating Systems:

-Windows

-LINUX

Programming language

-MATLAB

Application Tools

-MS Word

-Excel

DFT Software

-Quantum Espresso

-ABINIT

-SIESTA

Pspice

AUTOCAD

Language Skill

Reading, Speaking, Writing English

Reading French

Recent Publication:

Book:

. Shahrzad Salemi, Liyu Yang, Jun Dai, Jin Qin, Joseph B. Bernstein;

"Physics of Failure Based Handbook of Microelectronic Systems"; RIAC

and University of Maryland, RIAC 2008.

Papers:

S. Salemi, N. Goldsman, D. P. Ettisserry, A. Akturk, and A. Lelis;

"The effect of defects and their passivation on the density of states

of the 4H-silicon-carbide/silicon-dioxide interface"; J. Appl. Phys.

113, 053703 (2013

S. Salemi, D. Ettisserry, A. Akturk, N. Goldsman; "Density Functional

and Monte Carlo-Based Electron Transport Simulation in 4H-

SiC(0001)/SiO2 DMOSFET Transition Region"; Conference, Glasgow, UK;

2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 180 - 183.

D.P. Ettisserry, S. Salemi, N. Goldsman, S. Potbhare, and A. Akturk,

A. Lelis, "Identification and Quantification of 4H-SiC (0001)/SiO2

Interface Defects by Combining Density Functional and Device

Simulations"; Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in:

"Proc. of SISPAD", (2013).

. S. Salemi et al. "Silicon Carbide-Silicon Dioxide Transition Layer

Mobility"; Materials Science Forum, Vols. 717-720 (2012), pp 449-452.

. S. Salemi et al. "Total near Interface Trap Density Calculation of 4H-

SiC/SiO2 Structures before and after Nitrogen Passivation"; Materials

Science Forum, Vols 717-720 (2012) pp457-460.

. S. Salemi et al.; "The Effect of Different Passivations on Near

Interface Trap Density of 4H-SiC/SiO2 Structures"; ISDRS 2011

Conference Proceedings, Maryland, USA.

. N. Goldsman, S. Potbhare, A. Akturk, S. Salemi, A. Lelis, "Modeling

and Simulation of Silicon Carbide Power Systems SiC Power Devices";

ECS Trans. 2011 41(8): 177-181.

. S. Salemi et al.; "The Effect of Different Silicon Carbide Dioxide

Interface Passivations on Transition Region Mobility and Transport";

ISDRS 2011 Conference Proceedings, Maryland, USA.

. A. Akturk, S. Salemi, N. Goldsman, S. Potbhare, A. Lelis; "Simulation

of Carrier Transport in Bulk Silicon Carbide and Near Silicon Carbide-

Silicon Dioxide Interface"; International Conference on Simulation of

Semiconductor Processes and Devices; September 8-10, 2011; Osaka,

Japan.

. Shahrzad Salemi, Aris Christou; "The Reliability Physics of GaN HFETs:

Comparison with GaAs Based HEMTs"; 2008 LFE Conference, Delaware,

USA.

. Shahrzad Salemi, Aris Christou; "Charge Control Analysis of Gallium

Nitride Semiconductor Heterostructures and Comparison with GaAs HEFT

Failure Mechanisms"; Leven, Belgium.

. Y. Li, M. Krishnan, S. Salemi, G. Paradee, A. Christou; "Strain

Induced Buffer Layer Defects in GaN HFETs and their Evolution during

Reliability Testing"; IEEE CFP09RPS-CDR 47th Annual International

Reliability; Physics Symposium, Montreal, 2009.

. Shahrzad Salemi and A. Christou; "Failure Modes and Effects

Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Device

Degradation Mechanisms"; CS MANTECH Conference, May 16th-19th, 2011,

Palm Springs, California, USA.

. N. Goldsman, S. Potbhare, A. Akturk, S. Salemi, A. Lelis, "Modeling

and Simulation of Silicon Carbide Power Systems SiC Power Devices";

ECS Trans. 2011 41(8): 177-181.

. S. Salemi et al.; "The Effect of Different Silicon Carbide Dioxide

Interface Passivations on Transition Region Mobility and Transport";

ISDRS 2011 Conference Proceedings, Maryland, USA.

. A. Akturk, S. Salemi, N. Goldsman, S. Potbhare, A. Lelis; "Simulation

of Carrier Transport in Bulk Silicon Carbide and Near Silicon Carbide-

Silicon Dioxide Interface"; International Conference on Simulation of

Semiconductor Processes and Devices; September 8-10, 2011; Osaka,

Japan.

. Shahrzad Salemi, Aris Christou; "The Reliability Physics of GaN HFETs:

Comparison with GaAs Based HEMTs"; 2008 LFE Conference, Delaware,

USA.

. Shahrzad Salemi, Aris Christou; "Charge Control Analysis of Gallium

Nitride Semiconductor Heterostructures and Comparison with GaAs HEFT

Failure Mechanisms"; Leven, Belgium.

. Y. Li, M. Krishnan, S. Salemi, G. Paradee, A. Christou; "Strain

Induced Buffer Layer Defects in GaN HFETs and their Evolution during

Reliability Testing"; IEEE CFP09RPS-CDR 47th Annual International

Reliability; Physics Symposium, Montreal, 2009.

. Shahrzad Salemi and A. Christou; "Failure Modes and Effects

Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Device

Degradation Mechanisms"; CS MANTECH Conference, May 16th-19th, 2011,

Palm Springs, California, USA.

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